Research Areas

• MOS device physics and technology
• Nanoscale devices
• 3 dimensional integrated circuits
• Nonvolatile memory

Research Group Web Page located at http://nanodevice.stanford.edu

Other Information

• Director, Stanford Nano Fabrication facility
• Research Director, Center for Integrated Systems
• On Stanford faculty since 2002
• IEEE fellow
• 1995 IEEE Jack Morton Award
• 2002 Robert Noyce Medal
• Formerly senior VP and director of R&D, Texas Instruments
• Distinguished career at Toshiba and Hewlette Packard

Office:	CIS #103, 420 Via Palou Stanford University Stanford CA 94305-4070
Phone:	(650) 723-9508
Fax:	(650) 725-0991
Email:	yoshio.nishi@stanford.edu
Group Web Page:	http://nanodevice.stanford.edu