ASML PAS 5500/60: asml

Through a unique partnership with ASML, SNF labmembers now have access to new optical lithography capabilities. Access is shared with ASML applications engineers and technicians, who also provide support for equipment and special engineering needs.

SNF labmembers wishing to schedule training on this system should contact the appropriate SNF staff first. Please be aware that training is applications-oriented and consists of building, loading, and running the user's job file. Therefore, trainees must meet the following requirements:

  1. Prerequisites: You must have taken "All-litho" (introduction to lithography at SNF) and be trained on all the supporting tools required for photolithography processing (the appropriate coater, developer, bake oven, etc.)
  2. Layout File: You must have a GDS file for your device ready. If you need help with learning how to layout a device, please contact an SNF staff member. Information on how to layout an ASML reticle can be found here:
  3. Emulator Training: Schedule training on the emulator with ASML. Be prepared to discuss your process flow so that any engineering needs can be anticipated. Bring your GDS layout as it will be used to set up your job file. Detailed information about how to setup a job file can be found in the operation manual for this system:
  4. In-lab Training: Once you have set up your job file and your process flow, schedule training on the system in the lab. Ideally, you should have wafers ready to begin processing. In-lab training consists of 1-2 sessions, about 4 hours in length. Emulator and in-lab training are currently supported by ASML staff and limited by equipment as well as staff availability. ASML staff are generally at SNF Wednesdays, Thursdays, and Fridays. An abbreviated form of the operating procedures for in lab reference is provided here:

Description:

  • 5:1 reducing stepper
  • Maximum die width = 18 mm; Maximum die height = 22.6 mm (actual maximum die is slightly smaller)
  • I-line (365 nm)
  • alignment accuracy of 60 nm.
  • Typical resolution to 0.45 microns
  • 5" reticle masks, 90 to 120 mil thick.

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Stanford Nanofabrication Facility
Last Modified 03/24/2008