- Beam voltage = 30 keV
- Pixel size - 0.02 µm or larger in 0.01
µm steps (0.02 µm is standard)
- Pixel rate - variable up to 100 Mhz (operation
above 75Mhz may cause intermittent communication errors)
- Beam current - 4 nA typical
Note - the minimum dose possible at 100 Mhz, 4 nA, and 0.02 µm
pixel is 10 µC/cm2
- Resolution - 50 nm for thin resist
- Major field size - variable up to 2.00 mm
- Minor field size - variable up to 40 µm
- Stage travel - 7"
- Maximum sample size - 7"
- Current holders - 2" adapter for 3"
holder, 3" wafer, 4" wafer, 5x5" mask, universal holder
for arbitrary sizes up to 6"
- Stitching and overlay currently ranges from
0.05 µm to 0.25 µm worst case depending on chip size and
write time.
- Raw throughput ranges from 1 hr/cm2
for SAL-601 to 15 hrs/cm2 for PMMA. Overhead, especially
on complex patterns with lots of shapes, can double these numbers. To
estimate your patterning time, multiply the raw throughput by the percentage
of area coverage. For example, patterning 25 2x2 mm chips in PMMA with
10% pattern coverage would take 25 * 0.22 * 0.1 * 15 = 1.5
- 3 hrs depending on overhead time.
|
