Process Info: mrc Etch Recipes

MRC Etch Recipes

The following information is provided to SNF users to aid in the determination of appropriate etch parameters for their etching needs when using the MRC etcher. Standard or typical recipes and results are given. Several recipes for the same material may be given. The user may want to tailor the recipes to fit their specific process. Etch rates and selectivities are given as a starting point only and should not be considered to be current. It is highly recommended that users establish the etch rates for their work by the use of test wafers as close in material and masking pattern as possible to the device wafers to be etched.

Oxide

Note: Labmembers wishing to obtain high ion bombardment should remove the quartz plate from the electrode in the chamber. It is there to prevent sputtering of the electrode material onto the sample, but will act to de-energize the ion bombardment.

Material Etched	SiO2	SiO2	SiO2	SiO2

Gas Flow	O2 2 sccm	O2 2 sccm	O2 3 sccm	O2 4 sccm

Gas Flow	F23 15 sccm	F23 15 sccm	CHF3 15 sccm	CHF3 7.5 sccm

Pressure	50 mT	59 mT	50 mT	50 mT

RF Forward Vpeak	100 W 500 V	240 W	50 W	50 W 400 V

Etch Rate	~200A/min	~130A/min	~600A/min

Comments

Material Etched	SiO2 (Quartz)	LTO	LTO

Gas Flow	O2 3 sccm	O2 15 sccm	O2 15sccm

Gas Flow	CHF3 15 sccm	CHF3 3 sccm	F23 5 sccm

Pressure	48 mT	35 mT	35 mT

RF Forward Vpeak	60 W 400 V	80 W 460 V	80 W 500 V

Etch Rate		~230A/min	~152A/min

Comments

Nitride

Material Etched	Nitride	Nitride	Nitride	Nitride/Oxide

Gas Flow	O2 15 sccm	O2 2 sccm	O2 3 sccm	SF6 25 sccm

Gas Flow	F23 15 sccm	SF6 18 sccm	CHF3 15 sccm	F115 25 sccm

Pressure	25 mT	53 mT	50 mT	50 mT

RF Forward Vpeak	50 W 340 V	50 W 600 V	50 W	60 W

Etch Rate	~305A/min	~130A/min	~600A/min	~400A/min

Comments				LS Nitride 550A/min w/ O2 (3sccm)

Material Etched	LS Nitride On Glass

Gas Flow	O2 3 sccm

Gas Flow	F23 15 sccm

Pressure	50 mT

RF Forward Vpeak	60 W 330/400 V

Etch Rate	<1000A/min

Comments

Photoresist

Material Etched	Resist	Resist	Resist	Resist on GaAs

Gas Flow	O2 20 sccm	O2 20 sccm	O2 15 sccm	O2 20 sccm

Gas Flow

Pressure	100 mT	25 mT	3 mT	150 mT

RF Forward Vpeak	50 W 230 V	55 W 340 V	150 W 750 V	60 W

Etch Rate		~400A/min	~1300A/min

Comments

Material Etched	Resist On Glass

Gas Flow	O2 25 sccm

Gas Flow

Pressure	100 mT

RF Forward Vpeak	40 W

Etch Rate

Comments

Polyimide

Material Etched	Polyimide on Si	Polyimide	Polyimide/PMGI	PMGI

Gas Flow	O2 20 sccm	O2 20 sccm	O2 15 sccm	O2 20 sccm

Gas Flow

Pressure	100 mT	25 mT	3 mT	150 mT

RF Forward Vpeak	50 W 230 V	55 W 340 V	150 W 750 V	60 W

Etch Rate		~400A/min	~1300A/min

Comments

Silicon

Material Etched	Si Etch	Si	SOG	Si Carbide

Gas Flow START	SF6 5 sccm	O2 50 sccm	SF6 10 sccm	O2 10 sccm

Gas Flow	F115 5 sccm

Pressure	3 mT	100 mT	15 mT	24 mT

RF Forward Vpeak	100 W 550 V	200 W 700 V	50 W 159 V	200 W 880

Etch Rate		~400A/min	~1100A/min

Comments

Miscellaneous

Material Etched	Oxide/Polymer	Al on Si	TiW Etch	Sputter Etch

Gas Flow START	Ar 15 sccm	Ar 15 sccm	Ar 15 sccm	Ar 10 sccm

Gas Flow

Pressure	5 mT	4 mT	10 mT	10 mT

RF Forward Vpeak	150 W 750 V	150 W 300 V	70 W 450 V	100 W 600V

Etch Rate		~25A/min	~1100A/min

Comments

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Last Modified 09/02/2003