Gryphon/Balzers Sputterer Summary

	Gryphon	Balzers
'Crystal' name	gryphon	balzers
Available targets	Al, Al/1%Si, Ti	Al, Al/1%Si, Ti,W,TiW, TiSi2, Si, boron doped Si
Surface etch	<200A by ion mill	<200A by RF etch
Substrates types accepted	'Mainstream' Si, SiGe, quartz, sapphire.	Same as Gryphon.
Materials allowed	'Mainstream' only. No fast diffusers, no magnetics, no outgassing materials. Polyimide if fully cured. No GaAs, no photoresist. Samples cannot have been processed in non-mainstream equipment. Silicides OK.	Similar to Gryphon but more special cases allowed. Please ask.
Cleaning required	Std prediffusion, std silicide, or double rinsed PRS-1000. Ok to come from other clean system w/o clean; ask.	Same as Gryphon.
Substrate shape accepted	Whole 4" wafers or under 3". Up to 1cm thick. Wafer handler cannot accept deeply etched backside surfaces.	Four inch or less. Up to 1cm thick. Deep etched OK.
Number of samples per run	Twelve 4" wfs/run or various samples.	Nine 4" wfs/run or 24, 3"wfs/run or combination.
Deposition Temp	40-250C	25-200C
Film thickness ranges	Al, Al/Si: <5um. Ti: <1um.	Same Same W, TiW: <0.5um. Si: <1um.
Total processing time	Avg = 1hr.	Avg = 4+hrs.
Base pressure	To 5e -8 Torr (load lock)	To 9e -8 Torr (no load lock)
Options	Lock heat, dep heat, Meisner trap, ion milling.	Meisner trap, DC bias, dep heat, reactive sputtering, co-sputtering, RF etch.