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Exposure Area |
rect = 21 x 7.2 mm |
4" mask = 3" |
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4"array
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65mm
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1um
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5:1 reduct.
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* 6 inch manual loader is also available.
** 4 inch diameter is the maximum
*** Aperture separation
**** Down to 0.8um can be achieved in isolated circumstances.
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Dispenses photoresist adhesion promoters, and pre/postbakes. | Manual application of photoresist | Manual application of photoresist |
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See process pages for more specific litho processing information. Return to Equipment page for information on specific tools.
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Stanford Nanofabrication Facility Last Modified 08/29/2003 |