Subject: FYI on ER from STS through Drytek4
From: Jeannie Perez <nperez@stanford.edu>
Date: Thu, 29 Nov 2012 13:53:04 -0800

High Frequency Oxide test wafer from STS PECVD was etch in Drytek 4 with 
parameters:
  150 Watts,
  100 mT,
100 % CHF3,
10% O2
1min etch with results of 217A/min.

Jeannie