Subject: etch rates at AMT, ZEP520 & 2% PMMA
From: Filip Crnogorac <filip@stanford.edu>
Date: Mon, 25 Jun 2007 17:13:01 -0700

Hi all,

in case anyone is working with thin resists:

AMT etch rates of resist for process #3 (prog 3 - oxide and nitride etch)

ZEP520 (non-diluted) = 115 A/min = 11.5 nm/min
2% PMMA (no UV cure) = 190 A/min = 19 nm/min

based on 2 min etches, 3 runs, 2 wafers each in middle slots. Remember  
there may be some polymer redeposition.

Enjoy,

Filip

--------------------------------------
Ph.D. Candidate, Stanford University
Department of Electrical Engineering
Center for Integrated Systems
B-103, 420 Via Palou
Stanford, CA 94305