Subject: Re: which metal for lift off
From: James Conway <jwc@snf.stanford.edu>
Date: Fri, 11 Jul 2008 10:03:16 -0700
Fri, 11 Jul 2008 10:03:16 -0700
I really like 200 Angstroms of Ti followed by 300 - 500 angstroms of Au 
for the 100 nm films.  Evaporated never sputtered

I may have a need for a similar stack on wafers I am trying expose on 
the Hitachi -- so if you wish we could do some of this work together and 
compare results.

Best,

JWC



Arash Hazeghi wrote:
>
> Hello RAITH users,
>
> I am writing 50nm square arrays as well as dot arrays on 2% 950K 
> resist. In order to inspect the quality of the exposure I want to do a 
> quick metallization + lift off, has anyone tried lift off on dot 
> arrays recently? What is the ideal metal and thickness?
>
>  
>
> Thank you,
>
>  
>
> Arash
>
>  
>
>  
>
> -----------------------------------------------------------------------------
>
> Arash Hazeghi
>
>  
>
> PhD Candidate,
>
> Stanford Center for Integrated Systems
>
> 420 Via Palou Mall, CIS-X 300
>
> Stanford, CA 94305
>
> phone: +1-(650)-725-0418
>
>  
>
>  
>
> http://www.stanford.edu/~ahazeghi/
>
>  
>
>  
>


I really like 200 Angstroms of Ti followed by 300 - 500 angstroms of Au for the 100 nm films.  Evaporated never sputtered

I may have a need for a similar stack on wafers I am trying expose on the Hitachi -- so if you wish we could do some of this work together and compare results.

Best,

JWC



Arash Hazeghi wrote:

Hello RAITH users,

I am writing 50nm square arrays as well as dot arrays on 2% 950K resist. In order to inspect the quality of the exposure I want to do a quick metallization + lift off, has anyone tried lift off on dot arrays recently? What is the ideal metal and thickness?

 

Thank you,

 

Arash

 

 

-----------------------------------------------------------------------------

Arash Hazeghi

 

PhD Candidate,

Stanford Center for Integrated Systems

420 Via Palou Mall, CIS-X 300

Stanford, CA 94305

phone: +1-(650)-725-0418

 

 

http://www.stanford.edu/~ahazeghi/