Problem amtetcher SNF 2006-06-04 00:52:09: Note AMT Pgm #3 etch rate

king at snf.stanford.edu king at snf.stanford.edu
Sun Jun 4 00:52:10 PDT 2006


In order to sustain a plasma the DC Bias was programmed for -475V instead of -530V.   If you run Pgm #3 at -475V please note that the etch rate of thermal oxide drops to about 254A/ min, about 110A/min lower than normal. 




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