Comment amtetcher SNF 2010-10-18 15:49:38: process #4 etch rate

npapte at snf.stanford.edu npapte at snf.stanford.edu
Mon Oct 18 15:49:38 PDT 2010


etched 2 wafers using process #4 on 2010/10/10 for 6*20 min cycles, for an etch depth of 1.6 um (~133 A/min), 
SPR 220-7 consumed was 3 um (~250 A/min)




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