From ysohn at snf.stanford.edu Sun May 6 18:50:44 2012 From: ysohn at snf.stanford.edu (ysohn at snf.stanford.edu) Date: Sun, 6 May 2012 18:50:44 -0700 Subject: Comment amtetcher SNF 2012-05-06 18:50:44: process #3 etch rate Message-ID: oxide etch rate turned out to be a little higher than usual: 392A/min From ysohn at snf.stanford.edu Thu May 17 09:40:21 2012 From: ysohn at snf.stanford.edu (ysohn at snf.stanford.edu) Date: Thu, 17 May 2012 09:40:21 -0700 Subject: Comment amtetcher SNF 2012-05-17 09:40:21: oxide etch rate measured Message-ID: On 5/17, thermal oxide etch rate was measured using process #3. 15 min etched, etch rate was: 384.6 A/min From xuanwu at snf.stanford.edu Wed May 30 20:08:04 2012 From: xuanwu at snf.stanford.edu (xuanwu at snf.stanford.edu) Date: Wed, 30 May 2012 20:08:04 -0700 Subject: Comment amtetcher SNF 2012-05-30 20:08:04: debris Message-ID: the black platform underneath the wafer un/loading area was dusty and had tiny bits of stuff... wiped it away with IPA