From ukris at loki.stanford.edu Fri Aug 11 10:51:58 2000 From: ukris at loki.stanford.edu (Uma Krishnamoorthy) Date: Fri, 11 Aug 2000 10:51:58 -0700 (PDT) Subject: Thick resist Message-ID: Does anyone have much experience using thick resist (SPR220-7) as a mask for oxide etching on the amtetcher? If so, any suggestions on preprocessing my wafers before the etch step? Also, I need to etch a very thin layer of oxide (~500A) on my wafer. With Sharleen leaving, I cannot get trained on the equipment either. Is anyone running a similar program that I could piggyback on anytime soon? Thanks Uma ************************************************************** Uma Krishnamoorthy E.L.Ginzton Labs, 41-C 450 Via Palou Stanford, CA 94305 (650)723-6104 *************************************************************** From mcvittie at cis.Stanford.EDU Fri Aug 11 13:40:28 2000 From: mcvittie at cis.Stanford.EDU (Jim McVittie) Date: Fri, 11 Aug 2000 13:40:28 -0700 (PDT) Subject: Thick resist In-Reply-To: Message-ID: Uma, As for Amtetcher training, we will be making some video tapes of Sharleen doing her training on the different etcher before she leaves the SNF staff on Aug 25. Nancy Latta will be taking over the training however she will be using the video tapes for the initial training and following up with a shorter direct training period. In regard to using thick resist on the Amtetcher, we have had lots of problems with resist burning and arching over the years with thick resist. Oxide etching runs at a pretty high power density. With normal resist thicknesses (1.2 um), this tools runs very close to the resist burning point. THicker resist often pushes one over the burning point. Newer etchers, such as the P5000, get around the resist burning problem by coolinng the backside of the wafer. You can reduct resist burning in the amtetcher by harding the resist surface and doing a high temperature (150C) bake but reticulation is often a problem. Going to the P5000 is not a total solution since thick resist tends to stick the the wafer clamp and causes wafer unloading problem. The current solution for this problem in the p5000 is to remove the resist along the wafer edge. Jim -------------------------------------------------------------- James P. McVittie, Ph.D. Senior Research Scientist Rm. 336 jmcvittie at stanford.edu Allen Center for Integrated Systems Tel: (650) 725-3640 Stanford University Fax: (650) 723-4659 330 Serra Mall For packages: CISX Receiving Stanford, CA 94305-4075 Via Ortega Stanford, CA 94305-4075 On Fri, 11 Aug 2000, Uma Krishnamoorthy wrote: > > Does anyone have much experience using thick resist (SPR220-7) as a mask > for oxide etching on the amtetcher? If so, any suggestions on > preprocessing my wafers before the etch step? > > Also, I need to etch a very thin layer of oxide (~500A) on my wafer. With > Sharleen leaving, I cannot get trained on the equipment either. Is anyone > running a similar program that I could piggyback on anytime soon? > > Thanks > > Uma > > ************************************************************** > Uma Krishnamoorthy > E.L.Ginzton Labs, 41-C > 450 Via Palou > Stanford, CA 94305 > (650)723-6104 > *************************************************************** > > From mcvittie at cis.Stanford.EDU Mon Aug 14 16:50:19 2000 From: mcvittie at cis.Stanford.EDU (Jim McVittie) Date: Mon, 14 Aug 2000 16:50:19 -0700 (PDT) Subject: Drytek2 status 8/14/00 In-Reply-To: <399875FC.BE7DE64D@snf.stanford.edu> Message-ID: Ammtetcher Users, With Drytek2 being down, I suggest that you use the Matrix for your post oxide etch cleanup before your H2SO4/H2O2 wet resist strip. I have found that the first 15 seconds of the standard Matrix process is sufficent to make the H2SO4/H2O2 strip work correctly. I usually just run the standard process in the single wafer mode and use the abort bottom to stop after the 15s initiation period. Jim -------------------------------------------------------------- James P. McVittie, Ph.D. Senior Research Scientist Rm. 336 jmcvittie at stanford.edu Allen Center for Integrated Systems Tel: (650) 725-3640 Stanford University Fax: (650) 723-4659 330 Serra Mall For packages: CISX Receiving Stanford, CA 94305-4075 Via Ortega Stanford, CA 94305-4075 On Mon, 14 Aug 2000, Len Booth wrote: > Users - > The electrode chiller is not working at all. > The machine will be shutdown until we get it fixed. > Len > From mcvittie at cis.Stanford.EDU Mon Aug 14 18:03:14 2000 From: mcvittie at cis.Stanford.EDU (Jim McVittie) Date: Mon, 14 Aug 2000 18:03:14 -0700 (PDT) Subject: CleanUp - A New Matrix Program Message-ID: Drytek2 and Amtetcher Users, Upon request, I have created a new program for the Matrix program called "CleanUp". THis program is basicly the 1st step from the standard Matrix strip program except that it has pins up. With the Drytek2 etcher being down, you can use this program instead of the Drytek Cleanup program between an Amtetcher oxide etch and a H2SO4/H2O2 strip. It should keep you from seeing any residues on your wafer after the H2SO4/H2O2 resist strip. This program/process is not as good as the Cleanup program in Drytek2. The difference is that the Drytek program uses F115 (C2ClF5) which removes not only the polymer at the botom of etched features but it also removes plasma damage to exposed silicon, whereas the Matrix Cleanup program uses O2 which removes the bottom polyer but not the damage layer. Note that neither of the CleanUp programs removes the polymer on the sidewalls of your feathers. To remnove the sidewall polymer you need to use either the H2SO4/H2O2 step or a much longer plasma step. Let me know if you see any residues after the H2SO4/H2O2 step using this new program. Jim -------------------------------------------------------------- James P. McVittie, Ph.D. Senior Research Scientist Rm. 336 jmcvittie at stanford.edu Allen Center for Integrated Systems Tel: (650) 725-3640 Stanford University Fax: (650) 723-4659 330 Serra Mall For packages: CISX Receiving Stanford, CA 94305-4075 Via Ortega Stanford, CA 94305-4075