From mmessana at stanford.edu Tue Mar 16 12:27:47 2010 From: mmessana at stanford.edu (Matthew W. Messana) Date: Tue, 16 Mar 2010 12:27:47 -0700 (PDT) Subject: reservation released -- tool free all afternoon today Message-ID: <433581007.583501268767667078.JavaMail.root@zm03.stanford.edu> From jasonlin at stanford.edu Wed Mar 17 17:40:12 2010 From: jasonlin at stanford.edu (J. Jason Lin) Date: Wed, 17 Mar 2010 17:40:12 -0700 Subject: amtetcher free now Message-ID: <7bbc53f81003171740t30346976qac561fc6900c4d8f@mail.gmail.com> Started early, finished early. -------------- next part -------------- An HTML attachment was scrubbed... URL: From chongxie at stanford.edu Fri Mar 19 15:51:22 2010 From: chongxie at stanford.edu (Chong Xie) Date: Fri, 19 Mar 2010 15:51:22 -0700 (PDT) Subject: etch receipt question In-Reply-To: <1834874656.1181841269038450087.JavaMail.root@zm02.stanford.edu> Message-ID: <560140426.1184171269039082666.JavaMail.root@zm02.stanford.edu> Hello AMT users, I have a question about the etching receipts. I need to etch oxide with selectivity over Si and vertical sidewall. The receipt 3 (std Ox) has enough selectivity for me but I don't want the tapered sidewall profile, while receipt 4(via) has a good profile but very low selectivity over Si. The difference between the two is std via Gas 1-O2 6 30 Gas 2-CHF3 85 50 I assume the low O2 flow in std contribute to the high selectivity and sidewall protection. Higher flow of CHF3 also helps organic layer formation on the sidewall. I was wondering whether anyone has tried to tune the gas flows and get a vertical etch profile and a fairly good selectivity. Any input is appreciated. Thanks! chong From chienyuc at stanford.edu Sun Mar 28 10:04:52 2010 From: chienyuc at stanford.edu (Chien-Yu Chen) Date: Sun, 28 Mar 2010 10:04:52 -0700 (PDT) Subject: reservation release 3/28 10:30-12:00 Message-ID: <1874275001.1444201269795892308.JavaMail.root@zm03.stanford.edu> Wafers are not ready.