xuanwu at stanford.edu
Tue Jun 5 14:05:19 PDT 2012
Hi fellow ASML users,
I'm looking to do DRIE almost through my wafer, so I need a pretty thick
mask. I had originally wanted to use 7 um resist, but the maintenance
record shows that because of the removal of the purge/extraction hood,
no resists 3.0 um or above are allowed. Because of front-side features,
I cannot put down more oxide than what I already have. Does anyone have
experience doing this kind of stuff after the hood removal, or have any
suggestions for workarounds?
My oxide is thermal and 600nm thick.
Thanks in advance,
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