From xuanwu at snf.stanford.edu  Mon Nov  8 22:54:21 2010
From: xuanwu at snf.stanford.edu (xuanwu at snf.stanford.edu)
Date: Mon, 8 Nov 2010 22:54:21 -0800
Subject: Problem drytek2 SNF 2010-11-08 22:54:21: pressure problem
Message-ID: <mailman.1443.1357938294.25682.drytek2-pcs@snf.stanford.edu>

I might be missing something obvious here, but in standby mode, the pressure is really really small (10.4 mT), and when I tried to run my process, the pressure never went to the setpoint.  The timer starts counting even when flow and pressure are not reached.  The flow stays at 0 in my process, presumably because the pressure wasn't reached.  I was trying to run process 2.



From eenriquez at snf.stanford.edu  Tue Nov  9 11:49:58 2010
From: eenriquez at snf.stanford.edu (eenriquez at snf.stanford.edu)
Date: Tue, 9 Nov 2010 11:49:58 -0800
Subject: Problem drytek2 SNF 2010-11-08 22:54:21: pressure problem
Message-ID: <mailman.1444.1357938294.25682.drytek2-pcs@snf.stanford.edu>

No problem found.  Ran recipe 1 several times with no problems.



From eenriquez at snf.stanford.edu  Thu Nov 11 11:01:23 2010
From: eenriquez at snf.stanford.edu (eenriquez at snf.stanford.edu)
Date: Thu, 11 Nov 2010 11:01:23 -0800
Subject: Comment drytek2 SNF 2010-09-22 09:56:00: Completed monthly PM
Message-ID: <mailman.1445.1357938294.25682.drytek2-pcs@snf.stanford.edu>

Archived



From eenriquez at snf.stanford.edu  Thu Nov 11 11:01:51 2010
From: eenriquez at snf.stanford.edu (eenriquez at snf.stanford.edu)
Date: Thu, 11 Nov 2010 11:01:51 -0800
Subject: Comment drytek2 SNF 2010-11-11 11:01:50: Completed Monthly PM
Message-ID: <mailman.1446.1357938294.25682.drytek2-pcs@snf.stanford.edu>




From karthikv at snf.stanford.edu  Thu Nov 25 17:48:18 2010
From: karthikv at snf.stanford.edu (karthikv at snf.stanford.edu)
Date: Thu, 25 Nov 2010 17:48:18 -0800
Subject: Problem drytek2 SNF 2010-11-25 17:48:18: low poly etch rate in SOI
Message-ID: <mailman.1447.1357938294.25682.drytek2-pcs@snf.stanford.edu>

Ran process #2 poly etch for 45s to etch ASML alignment marks in electrode #2. Measured etch rate in regular silicon wafer is 200nm/min but for an SOI wafer the etch rate was only 29nm/min. These results are consistent across multiple SOI wafers. Is this a known difference between regular and SOI wafers??



From npapte at snf.stanford.edu  Fri Nov 26 16:58:11 2010
From: npapte at snf.stanford.edu (npapte at snf.stanford.edu)
Date: Fri, 26 Nov 2010 16:58:11 -0800
Subject: Comment drytek2 SNF 2010-11-26 16:58:10: machine not in correct standby state
Message-ID: <mailman.1448.1357938294.25682.drytek2-pcs@snf.stanford.edu>

no vacuum in chamber when I started. The chamber door opened up although the machine should have been in standby with vacuum inside the chamber.



From karthikv at snf.stanford.edu  Tue Nov 30 15:22:40 2010
From: karthikv at snf.stanford.edu (karthikv at snf.stanford.edu)
Date: Tue, 30 Nov 2010 15:22:40 -0800
Subject: Comment drytek2 SNF 2010-11-30 15:22:39: <solved> low etch rate in SOI
Message-ID: <mailman.1449.1357938294.25682.drytek2-pcs@snf.stanford.edu>

After talking to other people, it seems like the low etch rate problem might have been because of my soi wafers. I had done an anneal in nitrigen ambient 1040AN in tylan2 and it is possible that a thin layer of nitride may have formed on the surface which causes a slow etch rate initially. Once that layer is removed the etch proceeds with the normal expected etch rate. 



From shott at snf.stanford.edu  Tue Nov 30 15:37:10 2010
From: shott at snf.stanford.edu (shott at snf.stanford.edu)
Date: Tue, 30 Nov 2010 15:37:10 -0800
Subject: Problem drytek2 SNF 2010-11-25 17:48:18: low poly etch rate in SOI
Message-ID: <mailman.1450.1357938294.25682.drytek2-pcs@snf.stanford.edu>

Karthik reported the following subsequent discovery that seem to explain the lower-than-expected etch rate of his SOI wafer that had been annealed at high temperature.
Based on his observations, I am going to clear this problem:
After talking to other people, it seems like the low etch rate problem might have been because of my soi wafers. I had done an anneal in nitrigen ambient 1040AN in tylan2 and it is possible that a thin layer of nitride may have formed on the surface which causes a slow etch rate initially. Once that layer is removed the etch proceeds with the normal expected etch rate. 
Thanks to Karthik for both following up on this issue and being sufficiently considerate to the reset of the community to share his findings.
Thanks,
John