Problem drytek2 SNF 2010-11-25 17:48:18: low poly etch rate in SOI

karthikv at karthikv at
Thu Nov 25 17:48:18 PST 2010

Ran process #2 poly etch for 45s to etch ASML alignment marks in electrode #2. Measured etch rate in regular silicon wafer is 200nm/min but for an SOI wafer the etch rate was only 29nm/min. These results are consistent across multiple SOI wafers. Is this a known difference between regular and SOI wafers??

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