From utkan at piezo.Stanford.EDU Sun Aug 13 15:56:14 2000 From: utkan at piezo.Stanford.EDU (Utkan Demirci) Date: Sun, 13 Aug 2000 15:56:14 -0700 (PDT) Subject: drytek2 problem Message-ID: The flowmeter is measuring NO flow. The cooling system may not be functional. Be aware. From booth at snf.stanford.edu Mon Aug 14 15:43:08 2000 From: booth at snf.stanford.edu (Len Booth) Date: Mon, 14 Aug 2000 15:43:08 -0700 Subject: Drytek2 status 8/14/00 Message-ID: <399875FC.BE7DE64D@snf.stanford.edu> Users - The electrode chiller is not working at all. The machine will be shutdown until we get it fixed. Len From mcvittie at cis.Stanford.EDU Mon Aug 14 16:50:19 2000 From: mcvittie at cis.Stanford.EDU (Jim McVittie) Date: Mon, 14 Aug 2000 16:50:19 -0700 (PDT) Subject: Drytek2 status 8/14/00 In-Reply-To: <399875FC.BE7DE64D@snf.stanford.edu> Message-ID: Ammtetcher Users, With Drytek2 being down, I suggest that you use the Matrix for your post oxide etch cleanup before your H2SO4/H2O2 wet resist strip. I have found that the first 15 seconds of the standard Matrix process is sufficent to make the H2SO4/H2O2 strip work correctly. I usually just run the standard process in the single wafer mode and use the abort bottom to stop after the 15s initiation period. Jim -------------------------------------------------------------- James P. McVittie, Ph.D. Senior Research Scientist Rm. 336 jmcvittie at stanford.edu Allen Center for Integrated Systems Tel: (650) 725-3640 Stanford University Fax: (650) 723-4659 330 Serra Mall For packages: CISX Receiving Stanford, CA 94305-4075 Via Ortega Stanford, CA 94305-4075 On Mon, 14 Aug 2000, Len Booth wrote: > Users - > The electrode chiller is not working at all. > The machine will be shutdown until we get it fixed. > Len > From mcvittie at cis.Stanford.EDU Mon Aug 14 18:03:14 2000 From: mcvittie at cis.Stanford.EDU (Jim McVittie) Date: Mon, 14 Aug 2000 18:03:14 -0700 (PDT) Subject: CleanUp - A New Matrix Program Message-ID: Drytek2 and Amtetcher Users, Upon request, I have created a new program for the Matrix program called "CleanUp". THis program is basicly the 1st step from the standard Matrix strip program except that it has pins up. With the Drytek2 etcher being down, you can use this program instead of the Drytek Cleanup program between an Amtetcher oxide etch and a H2SO4/H2O2 strip. It should keep you from seeing any residues on your wafer after the H2SO4/H2O2 resist strip. This program/process is not as good as the Cleanup program in Drytek2. The difference is that the Drytek program uses F115 (C2ClF5) which removes not only the polymer at the botom of etched features but it also removes plasma damage to exposed silicon, whereas the Matrix Cleanup program uses O2 which removes the bottom polyer but not the damage layer. Note that neither of the CleanUp programs removes the polymer on the sidewalls of your feathers. To remnove the sidewall polymer you need to use either the H2SO4/H2O2 step or a much longer plasma step. Let me know if you see any residues after the H2SO4/H2O2 step using this new program. Jim -------------------------------------------------------------- James P. McVittie, Ph.D. Senior Research Scientist Rm. 336 jmcvittie at stanford.edu Allen Center for Integrated Systems Tel: (650) 725-3640 Stanford University Fax: (650) 723-4659 330 Serra Mall For packages: CISX Receiving Stanford, CA 94305-4075 Via Ortega Stanford, CA 94305-4075