CleanUp - A New Matrix Program

Jim McVittie mcvittie at cis.Stanford.EDU
Mon Aug 14 18:03:14 PDT 2000

Drytek2 and Amtetcher Users,

Upon request, I have created a new program for the Matrix program called
"CleanUp". THis program is basicly the 1st step from the standard Matrix
strip program except that it has pins up. With the Drytek2 etcher being
down, you can use this program instead of the Drytek Cleanup program
between an Amtetcher oxide etch and a H2SO4/H2O2 strip. It should keep you
from seeing any residues on your wafer after the H2SO4/H2O2 resist strip.
This program/process is not as good as the Cleanup program in Drytek2. The
difference is that the Drytek program uses F115 (C2ClF5) which removes not
only the polymer at the botom of etched features but it also removes
plasma damage to exposed silicon, whereas the Matrix Cleanup program uses
O2 which removes the bottom polyer but not the damage layer. Note that
neither of the CleanUp programs removes the polymer on the sidewalls of
your feathers. To remnove the sidewall polymer you need to use either the
H2SO4/H2O2 step or a much longer plasma step.

Let me know if you see any residues after the H2SO4/H2O2 step using this
new program.
James P. McVittie, Ph.D.                Senior Research Scientist
Rm. 336            			jmcvittie at
Allen Center for Integrated Systems	Tel: (650) 725-3640	
Stanford University			Fax: (650) 723-4659
330 Serra Mall		  For packages: CISX Receiving
Stanford, CA 94305-4075			Via Ortega
					Stanford, CA 94305-4075

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