From ahazeghi at stanford.edu Wed Aug 4 00:01:37 2010 From: ahazeghi at stanford.edu (Arash Hazeghi) Date: Wed, 4 Aug 2010 00:01:37 -0700 Subject: problem with etching Message-ID: <00f801cb33a2$e2004c60$a600e520$@edu> Hi, I used process #2 (poly etch) last week for etching Si, I had used the program before and it worked, it should have etched ~ 1200A (30sec) but it had etched only 400A (measured accurately with AFM). I did season the chamber. During the dummy run I noticed instability in SF6 flow rate for about ~2minutes but the flow stabilized and remained fixed at 117sccm during the actual run. Power was normal. What was the possible problem, have the etch rates changed since a few months ago? Thanks, Arash Arash Hazeghi PhD Candidate Paul G. Allen Center for Integrated systems, 420 Via Palou Mall, Stanford, CA 94305, USA office: +1-650-725-0418 cell: +1-650-353-1866 web: http://www.stanford.edu/~ahazeghi -------------- next part -------------- An HTML attachment was scrubbed... URL: From ahazeghi at stanford.edu Thu Aug 19 18:00:16 2010 From: ahazeghi at stanford.edu (Arash Hazeghi) Date: Thu, 19 Aug 2010 18:00:16 -0700 (PDT) Subject: shutdown procedure Message-ID: <741401322.159746.1282266016912.JavaMail.root@zm03.stanford.edu> I found that drytek 2 was not in stanby mode, chamber door was open, keeping the chamber under vacuum helps with consistency and cleanness of the tool, please put the system in stanby mode when you are done. Thanks, Arash -------------- next part -------------- An HTML attachment was scrubbed... URL: