From jwc at snf.stanford.edu Tue Jan 15 16:28:22 2008 From: jwc at snf.stanford.edu (James Conway) Date: Tue, 15 Jan 2008 16:28:22 -0800 Subject: READ ME: WARNING TO ALL HEADWAY USERS Message-ID: <478D4FA6.7000701@snf.stanford.edu> ** * WARNING TO ALL HEADWAY USERS* * * with special emphasis to Users working with LOL and other non-Standard resist in particular: *EVERYONE working on the Headway2 Spinner shall henceforth be required to start and finish their processing on a clean resist residue free Headway (wbmiscres) bench area. * All Users are now required to wipe down the bench surfaces and shields first with Acetone then followed by Isopropanol applied to Lab wipers only each time they use the bench. LOL and severely cross-linked resist residues including traces of PMMA can be removed by using Microchem Remover PG, if you are unable to remove your residues after your spinning operations using normal solvents. If you find that the bench is not clean and free of all residues and 'Ready to Go' when you arrive to spin coat your wafers, please take a moment to CLEAN IT UP YOURSELF and 'REPORT Problem on CORAL'. Previous Users will then be placed into Community Service (CS) if they left the bench contaminated. The amount of CS will be dependent on the severity of the transgression and if they are a repeat offender in the past. Please have respect for all Lab Members and SNF Staff working on the Headway2 spinner by cleaning up after yourself when you use the tool. SNF Staff do not have the time to perform housekeeping within their day -- it diverts our resources that are better spent addressing other critical needs in the SNF Cleanroom. SNF Staff and Management will be carefully monitoring this area in the following weeks to identify those few users remaining that are not doing their share. Please do your part to maintain a cleanroom environment in this area. Your results and the quality of all Lab members results are dependent on all Users working together as a community and maintaining a clean work environment. Thank you for your support as we implement changes towards improving the quality of the work environment in the SNF cleanroom areas. Your comments are invited! Please reply to the headway2 at snf.stanford.edu email list. James Conway Mahnaz Mansourpour Mario Vilanova -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: stanford_bannerbuilding.jpg Type: image/jpeg Size: 19603 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Red-ball.gif Type: image/gif Size: 384 bytes Desc: not available URL: From jwc at snf.stanford.edu Tue Jan 22 12:03:36 2008 From: jwc at snf.stanford.edu (James Conway) Date: Tue, 22 Jan 2008 12:03:36 -0800 Subject: ANNOUNCEMENT: "Take A Spin with Me" -- Ebeam Resist Handling Training on the Headway. Tuesday January 29, 2008 from 10:15 - 12:30 Message-ID: <47964C18.2060300@snf.stanford.edu> *ANNOUNCEMENT: "Take A Spin with Me" -- Resist Handling Training on the Headway Coater.* Greetings SNF Lab Users, I will be conducting my bi-monthly *"Take A Spin with Me" *training class Tuesday January 29, 2008 from 10:15 AM - 12:30 PM. There is a sign up sheet posted on the white board in my office if you desire to sign up in advance. This is a great opportunity for you to get acquainted with the specific points to employ when working with our Ebeam or Optical Resist materials in order to obtain high quality thin film coatings over your wafers for Electron Beam, Scanning Probe (SPL), and optical Nano-Lithography. In these applications accurate control of polymer thickness is important in order to obtain consistent high quality lithography results. We will be conducting this training on the Headway Spin Coater. Users attending this session will gain their qualification on this tool and also learn to perform thin film measurements on the Nanospec TFA measurement tool. This is a Hands-On Lab Session, please have your substrates clean and ready to coat on the Headway Coater. Schedule of Events: 10:15 - 11:00 I will start with substrate cleans on WET BENCH NONMETAL performing Pirhana substrate cleans and HF etching of the intrinsic native oxide on Silicon wafers. All users must have their substrates cleaned and ready to go for spinning by the session time; either coming out of the 150 degree Singe oven, or if you are working on oxides or nitrides, coming out of the YES HMDS Prime oven directly. 11:00 - 12:00 We can apply what ever Ebeam or Optical Resist system you desire for your work. 12:00 - 12:30 Thin Film Measurements on the Nanospec Thin Film Analyzer All interested parties are welcome to attend this session. Thank you for your interest in Ebeam and Optical Lithography at Stanford Nanofabrication Facility, James W. Conway Ebeam Technology Group Stanford Nanofabrication Facility 650-725-7075 office hour Tuesday - Friday 8:30 - 9:30 AM CIS 31 -------------- next part -------------- An HTML attachment was scrubbed... URL: From jwc at snf.stanford.edu Fri Jan 25 10:49:00 2008 From: jwc at snf.stanford.edu (James Conway) Date: Fri, 25 Jan 2008 10:49:00 -0800 Subject: Note to Users on the two blends of Microchem 5% PMMA in Anisole. Two different molecular weights are available for your usage. Message-ID: <479A2F1C.6090905@snf.stanford.edu> Good Morning to all SNF 5% PMMA Users: I just wanted to remind All PMMA Users that we currently have in the Cleanroom two blends of 5% PMMA in Anisole manufactured by Microchem: 1. 5% 495K Molecular Weight PMMA in Anisole -- This is our standard PMMA resist and if you use the default spin speed in our process sheet you will obtain thin films on the order of 300 nm in thickness. This is suitable for fine lines down to below 50 nm and should be employed if you are performing metal lift-off with stack thicknesses greater than 200 nm, or if you prefer to perform RIE for etch processes as deep as 400 - 500 nm into Silicon. This material can also be employed as the lower layer in a dual layer stack for thick metal lift off processing. I have stocked a new bottle of this material into the SNF cleanroom yesterday and it is from the same Microchem Batch Lot number as the previous bottles we have had in the lab this last year. 2. 5% 950K Molecular Weight PMMA in Anisole - This material is the same PMMA material and is blended to the same 5% solids content in Anisole as the 495K, but formulated to a longer polymeric chain length which results in a higher molecular weight. It is suitable for all processes with the exception of the dual layer processes used for thick metal lift-off processing. In my initial measurements its spin speed as a function of thickness is slightly thicker than the 5% 495K PMMA material. My new Single Layer 5% 950K PMMA Ebeam resist process is attached as a MS word document for your review. Your comments are invited. This material is currently under evaluation to determine if we can obtain improved performance leading to better ultimate resolution in feature size or an improved RIE etching characteristic. I have this material currently stocked in the SNF Fab and Users are encouraged to give this material a trial using their patterns and processes. Please be sure to provide us with your feedback and images and data from your best results to add to SNF Ebeam Resist Process Suite on our website. Thank you for your interest in Ebeam Technologies here at the Stanford Nanofabrication Facility, James Conway -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Single Layer 5% 950K MW PMMA - Anisole.doc Type: application/msword Size: 1672192 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... 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