thick oxide

Sanli Ergun sanli at piezo.Stanford.EDU
Mon Apr 9 14:27:01 PDT 2001


I assume you mean thermal oxide. As thermal oxide grows on both sides of
the si wafer, it cancels out as grown. However, depending on the following
steps you will take it may have dramatic effects on you wafer. That is, it
depends on what you will do next.

On Mon, 9 Apr 2001, Erhan Yenilmez wrote:

>
> I want to have a very thick oxide (>2micrometers) layer on silicon.
> I'm worried about stress effects.
> Is there anyone who has experimented with such oxide thickness?
> Thank you,
> Erhan
>
>
>
> -----------------------------------------------------------------
> Erhan Yenilmez
> Ph.D. student, Dept. of Applied Physics,
> Stanford University
>
> voice:   (650) 725-9156 (office)
>          (650) 497-3412 (home)
> fax:     (650) 725-9793
>
> mail: Dept. of Applied Physics
>       Stanford University,
>       Stanford, CA 94305-4090
>
> e-mail: yenilmez at stanford.edu
> ------------------------------------------------------------------
>
>

________________________________________________________
Arif Sanli Ergun
Engineering Research Associate
E. L. Ginzton Laboratory,
Room : 130,
Stanford University,
Stanford, CA, 94305-4085
Phone: (650) 723-8447
Fax  : (650) 725-7509
www  : http://piezo.stanford.edu/group/IRP/sanliIRP.html




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