From caudillo at siliconlight.com Fri Sep 6 15:20:05 2002 From: caudillo at siliconlight.com (David Caudillo) Date: Fri, 6 Sep 2002 15:20:05 -0700 Subject: Looking for decommissioned fab space Message-ID: <8B91B41B86B7D4118E390003470A02E3DB3944@crum.internal.siliconlight.com> Industrial Users, I would like to know if any one might be working for a company or knows of a company that has some decommissioned fabrication space. Preferably this dream company would be in one of these areas: San Jose, Milpitas, Santa Clara, Cupertino, Sunnyvale, Mtn. View or Palo Alto. What we are looking for: If this place has furnaces, capable of processing 6 inch material and with auto loading it would be a plus. Please Contact: E-mail: caudillo at siliconlight.com Thank You David Caudillo voicemail: 1-408-541-4954 cell: 1-408-593-4579 Silicon Light Machines 385 Moffett Park Drive Suite 110 Sunnyvale, Ca 94089-1208 From GaryYamaNet at netscape.net Tue Sep 10 09:58:18 2002 From: GaryYamaNet at netscape.net (GaryYamaNet at netscape.net) Date: Tue, 10 Sep 2002 12:58:18 -0400 Subject: 1 wafer @ p5000 MON morning... Message-ID: <740CDD9F.16F2A09D.37F17E86@netscape.net> Hello all, I got a wafer stuck in p5000 FRI night. Len got it out & put it in a single wafer holder MON morning & left it on the black table in front of the machine. The carrier has green magic marker writing in it, "for wafer stuck in p5000." Has anyone seen it? Please let me know, as I will be down to only 3 wafers if this one can't be found. Thanks - Gary __________________________________________________________________ The NEW Netscape 7.0 browser is now available. Upgrade now! http://channels.netscape.com/ns/browsers/download.jsp Get your own FREE, personal Netscape Mail account today at http://webmail.netscape.com/ From GaryYamaNet at netscape.net Tue Sep 10 10:24:40 2002 From: GaryYamaNet at netscape.net (GaryYamaNet at netscape.net) Date: Tue, 10 Sep 2002 13:24:40 -0400 Subject: Missing p5000 wafer found. Message-ID: <4208D86A.6BB2CB0C.37F17E86@netscape.net> __________________________________________________________________ The NEW Netscape 7.0 browser is now available. Upgrade now! http://channels.netscape.com/ns/browsers/download.jsp Get your own FREE, personal Netscape Mail account today at http://webmail.netscape.com/ From cpreston at snf.stanford.edu Tue Sep 10 11:51:18 2002 From: cpreston at snf.stanford.edu (Ciara Preston) Date: Tue, 10 Sep 2002 11:51:18 -0700 Subject: Bank Card Found Message-ID: <3D7E3F26.14FF29D1@snf.stanford.edu> Outreach: A bamk ATM card was found in the Lab. If you've lost yours please contact Ciara Preston at this e-mail address or come by my cube # 43 to identify. Ciara -- Ciara Preston Lab Services Administrator Stanford Nanofabrication Facility Phone 650-725-3664 From beckwith at snf.stanford.edu Wed Sep 11 10:32:08 2002 From: beckwith at snf.stanford.edu (Sharleen Beckwith) Date: Wed, 11 Sep 2002 10:32:08 -0700 Subject: polyimide advice Message-ID: Hi All: I am thinking about using polyimide to protect the front side of SOI wafers while doing the following steps on the backside of the wafer: svgcoat (20um thick using SPR 220-7) evalign hand develop long 90C bake in the oven sts etch (10 hours or so, on the backside of the wafer) If anyone had done something similar, could you please e-mail me. I would like to talk to you about the pros and cons of this. Thanks. Sharleen -- =-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-= Knowledge is the basis, for without knowing each other it is difficult to build trust and to reach a state of genuine unity, without which it is hard to get peace. His Holiness Tenzin Gyatso, The Fourteenth Dalai Lama =-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-= From ethrush at stanford.edu Thu Sep 12 15:16:32 2002 From: ethrush at stanford.edu (Evan Thrush) Date: Thu, 12 Sep 2002 15:16:32 -0700 Subject: Carbon Black Deposition Message-ID: <5.1.1.5.2.20020912151058.00b77a68@snow.stanford.edu> Hello Friendly Labmembers, I am interested in finding good materials for optical isolation, black polyimides, etc. Anyway, I have had some problems finding black polyimides that I like and someone recommended that I use Carbon black. I guess you deposit carbon black with some method, such as sputtering, onto a lift off mask? Anyway, I don't know much about this process. Does anyone know of carbon black deposition techniques that are readily available around the lab or nearby Stanford. How do you pattern this stuff? Thanks for your help!, Evan ------------------------------------------------------------------------------------------------------ Evan Thrush Stanford University; E.E. PhD Candidate CIS-X Rm. B113-21, Stanford, CA 94305-4075 Phone: (650)725-2774 E-mail: ethrush at stanford.edu Fax: (650)723-4659 Homepage: http://snow.stanford.edu/~ethrush From flannery at leland.stanford.edu Thu Sep 12 16:53:18 2002 From: flannery at leland.stanford.edu (Anthony Flannery) Date: Thu, 12 Sep 2002 16:53:18 -0700 Subject: Carbon Black Deposition References: <5.1.1.5.2.20020912151058.00b77a68@snow.stanford.edu> Message-ID: <3D8128EE.E6A93C9F@leland.stanford.edu> Hi, Mark Capelli over in the Mechanical Engineering department had developed a process for depositing diamond-like carbon. He may already have a set of process parameters that give you a rough carbon deposit that will have the optical properties you need. He's been willing to work with people in the past for given projects. Just as a sideline - there are lots of papers on electroplating of Pt black. It would most likely have greater broadband absorbance than carbon black. Carbon black will probably not absorb well in the IR. If this is for Telco, you're better off with Pt. Tony Flannery Evan Thrush wrote: > Hello Friendly Labmembers, > > I am interested in finding good materials for optical isolation, black > polyimides, etc. Anyway, I have had some problems finding black polyimides > that I like and someone recommended that I use Carbon black. I guess you > deposit carbon black with some method, such as sputtering, onto a lift off > mask? Anyway, I don't know much about this process. Does anyone know of > carbon black deposition techniques that are readily available around the > lab or nearby Stanford. How do you pattern this stuff? > > Thanks for your help!, > Evan > > ------------------------------------------------------------------------------------------------------ > > Evan Thrush > Stanford University; E.E. PhD Candidate > CIS-X Rm. B113-21, Stanford, CA 94305-4075 > Phone: (650)725-2774 E-mail: ethrush at stanford.edu > Fax: (650)723-4659 Homepage: http://snow.stanford.edu/~ethrush From pcastle at stanford.edu Fri Sep 13 10:09:29 2002 From: pcastle at stanford.edu (pcastle at stanford.edu) Date: Fri, 13 Sep 2002 10:09:29 -0700 Subject: Carbon Black Deposition In-Reply-To: <3D8128EE.E6A93C9F@leland.stanford.edu> References: <5.1.1.5.2.20020912151058.00b77a68@snow.stanford.edu> <3D8128EE.E6A93C9F@leland.stanford.edu> Message-ID: <1031936969.3d821bc9e1d8f@webmail.stanford.edu> We have done gold-black as an optical absorption coating. It is done in a thermal evaporator. It has great absorption properties but is very delicate (it can be washed off). pat Quoting Anthony Flannery : > Hi, > > Mark Capelli over in the Mechanical Engineering department had > developed a process for depositing > diamond-like carbon. He may already have a set of process parameters > that give you a rough carbon deposit > that will have the optical properties you need. He's been willing to > work with people in the past for > given projects. > > Just as a sideline - there are lots of papers on electroplating of Pt > black. It would most likely have > greater broadband absorbance than carbon black. Carbon black will > probably not absorb well in the IR. If > this is for Telco, you're better off with Pt. > > Tony Flannery > > > Evan Thrush wrote: > > > Hello Friendly Labmembers, > > > > I am interested in finding good materials for optical isolation, > black > > polyimides, etc. Anyway, I have had some problems finding black > polyimides > > that I like and someone recommended that I use Carbon black. I > guess you > > deposit carbon black with some method, such as sputtering, onto a > lift off > > mask? Anyway, I don't know much about this process. Does anyone > know of > > carbon black deposition techniques that are readily available > around the > > lab or nearby Stanford. How do you pattern this stuff? > > > > Thanks for your help!, > > Evan > > > > > ------------------------------------------------------------------------------------------------------ > > > > Evan Thrush > > Stanford University; E.E. PhD Candidate > > CIS-X Rm. B113-21, Stanford, CA 94305-4075 > > Phone: (650)725-2774 E-mail: ethrush at stanford.edu > > Fax: (650)723-4659 Homepage: http://snow.stanford.edu/~ethrush > > From opticalmachine at hotmail.com Fri Sep 13 15:13:26 2002 From: opticalmachine at hotmail.com (Ben Jian) Date: Fri, 13 Sep 2002 15:13:26 -0700 Subject: question on Pyrex-silicon wafer bonding Message-ID: Hi labmembers, I need advice on wafer bonding. I have been trying to bond a silicon to Pyrex wafer using gold-silicon eutectic bonding without success (for some special reason, anodic bonding is not possible for me). The process which I tried is the following: I first pattern a photoresist liftoff mask on the Corning Pyrex 7740 wafer surface, do a quick O2 RIE to clean the open surface, evaporate with TiPtAu (200A/700A/2500A), liftoff using ultrasonic bath of 1165 remover. The patterned metal surface is cleaned again in O2 RIE, then loaded into the EV bonder with a blank silicon wafer (which was dipped in diluted HF briefly beforehand). The wafer pair is heated to 400C, then high pressure is applied for 1 hour at 400C. The bonding result: I can relatively easily separate the silicon wafer from the glass wafer. And the metal films are cleanly separated from the glass surface, and surprisingly, they adhere to the silicon wafer surface. I need advice as to why this happened and how to solve this problem. Thanks in advance. Ben _________________________________________________________________ MSN Photos is the easiest way to share and print your photos: http://photos.msn.com/support/worldwide.aspx From rNagarajan at infinera.com Fri Sep 13 15:58:10 2002 From: rNagarajan at infinera.com (Radha Nagarajan) Date: Fri, 13 Sep 2002 15:58:10 -0700 Subject: Metallization Message-ID: Hi, I was hoping to get some help from you out there. We are looking for a service to metallize an 8" Si wafer with Pt/Au. Any help or web links would be useful. Thank you. Radha Nagarajan. Infinera Confidential: This message is intended only for the use of the individual or entity, to which it is addressed and may contain information that is privileged, confidential, and/or exempt from disclosure by applicable law or court order. If the reader of this message is not the intended recipient, or the employee or agent responsible for delivering the message to the intended recipient, you are hereby notified that any use, dissemination, distribution, or copying of this communication is strictly prohibited. If you have received this communication in error, please notify us immediately by return e-mail at the above address and delete all copies of this message from your computer systems. Thank you. From mahnaz at snf.stanford.edu Mon Sep 16 11:37:19 2002 From: mahnaz at snf.stanford.edu (Mahnaz) Date: Mon, 16 Sep 2002 11:37:19 -0700 Subject: KS visit Message-ID: <3D8624DF.8D5FAEDF@snf.stanford.edu> Hello all, I am pleased to let you know that there will be a training session on Karl suss given by Scott McSweeney, product specialist from Karl suss America on Monday 9/23/02 at 2 in the afternoon in the lab. Please mark your calendar and bring your issues and concern: Mahnaz From eap at gloworm.Stanford.EDU Fri Sep 20 21:09:36 2002 From: eap at gloworm.Stanford.EDU (Eric Perozziello) Date: Fri, 20 Sep 2002 21:09:36 -0700 (PDT) Subject: Lights on.... Message-ID: <200209210409.VAA29375@gloworm.Stanford.EDU> Blue toyota 4 dr 2VXR860.... your lights are on in the close lot! Friday Eve... -Eric From pzhang at stanford.edu Sat Sep 21 18:57:30 2002 From: pzhang at stanford.edu (Ping Zhang) Date: Sat, 21 Sep 2002 18:57:30 -0700 (PDT) Subject: Ph.D. Oral Defense Announcement Message-ID: University Ph.D. Oral Examination Thursday, September 26, 2002, 1:30 pm CIS-X Auditorium (Refreshments at 1:15 pm) "A Micromechanical Study of Free-standing Thin Films for RF MEMS Switch Application" Ping Zhang Department of Materials Science and Engineering Abstract: Microelectromechanical systems (MEMS) have a wide range of applications. In the field of wireless and microwave technology, considerable attention has been given to the development and integration of MEMS-based RF (radio frequency) components in an effort to achieve a single-chip RF solution for future telecom systems. An RF MEMS switch requires high isolation, low insertion loss, and low actuation voltage - operational aspects that have been extensively studied. The mechanical requirements of the switch, such as low sensitivity to built-in stress and high reliability, greatly depend on the micromechanical properties of the switch materials, and have not been thoroughly explored. This research focuses on the study of these micromechanical issues. RF MEMS switches are typically in the form of a free-standing thin film structure. Large stress gradients and across-wafer stress variations developed during fabrication of the switches severely degrade their electrical performance. We have built a stress measurement sensor that can potentially be employed for in-situ monitoring of stress evolution and wafer-scale stress variation during thin film deposition. The sensors were micromachined using five masks on two wafer levels, each measuring 5x3x1 mm. They function by means of an electron tunneling mechanism, where a 2x2 mm silicon nitride deflection membrane elastically deflects under an applied deflection voltage in an external feedback circuitry. For the current design, the sensors are capable of measuring tensile stresses up to the GPa range under deflection voltages of 50-100 V. Sensor functionality was studied by finite element modeling (FEM) in conjunction with a theoretical analysis of square membrane deflection. While the mechanical properties of thin films on substrates have been extensively studied, studies of free-standing thin films have been limited due to the practical difficulties in sample handling and testing. We have successfully fabricated free-standing Al and Al-Ti thin film specimens and performed microtensile and stress relaxation tests in our custom-designed micromechanical testing apparatus. A dedicated TEM (transmission electron microscopy) sample preparation technique allows us to investigate the microstructures of these thin films both before and after mechanical testing and to correlate the microstructural findings with the mechanical behavior. Major studies include grain boundary strengthening in pure Al and solid solution and precipitate strengthening in an Al-Ti alloy, plastic deformation in pure Al by inhomogeneous deformation and localized grain thinning, and stress relaxation of Al and Al-Ti. From mahnaz at snf.stanford.edu Mon Sep 23 09:13:19 2002 From: mahnaz at snf.stanford.edu (Mahnaz) Date: Mon, 23 Sep 2002 09:13:19 -0700 Subject: KS presenation Message-ID: <3D8F3D9F.71E2B0FB@snf.stanford.edu> Hello all, Kind reminder, that Karl Suss will be here to day 9/23 at 2 pm. If you need training or any question, suggestion on the aligner please come by. Hope to see you mahnaz -------------- next part -------------- An HTML attachment was scrubbed... URL: From mahnaz at snf.stanford.edu Tue Sep 24 08:24:35 2002 From: mahnaz at snf.stanford.edu (Mahnaz) Date: Tue, 24 Sep 2002 08:24:35 -0700 Subject: [Fwd: UV-248 nm class/09/26/02] Message-ID: <3D9083B3.D1C7F560@snf.stanford.edu> Hello all, Here is the address and also they need the head count so please let me know if you are attending. mahnaz Here is direction, Our address is 245 Santa Ana Court, Sunnyvale CA 94085. Please take 101 south, them make a left on Lawrence south. Take a let into Arquez, go west. On your right you will see B of A, right after that, on your left you will see Santa Anna Court. Regards Frank -------------- next part -------------- An embedded message was scrubbed... From: FYaghmaie at Shipley.com Subject: UV-248 nm class/09/26/02 Date: Mon, 23 Sep 2002 11:32:07 -0400 Size: 2502 URL: From huy21st at yahoo.com Thu Sep 26 07:19:28 2002 From: huy21st at yahoo.com (huy vo) Date: Thu, 26 Sep 2002 07:19:28 -0700 (PDT) Subject: Where is BCB? Message-ID: <20020926141928.47050.qmail@web11701.mail.yahoo.com> Hello all, Does anyone know where I can get the stuff called BCB, Benzene CycloButene? Cheers, Huy --------------------------------- Do you Yahoo!? New DSL Internet Access from SBC & Yahoo! -------------- next part -------------- An HTML attachment was scrubbed... URL: From guerra at par.stanford.edu Thu Sep 26 08:58:53 2002 From: guerra at par.stanford.edu (Ann Guerra) Date: Thu, 26 Sep 2002 08:58:53 -0700 (PDT) Subject: EE310 Integrated Circuits Seminar, 10/1/02 Message-ID: EE310 Integrated Circuits Technology and Design Seminar "Standard CMOS Nonvolatile Reprogrammable Switch for Low Phase Noise in LC Oscillators" Tamara Papalias Dept. of Electrical Engineering San Jose State University Tuesday, October 1, 2002 4:15 p.m. Building 380, Room 380X ABSTRACT A nonvolatile reprogrammable switch is characterized in a standard CMOS process. LC oscillators operating between 1-2GHz utilize the switch to minimize phase noise deviation over tuning range. Bond wires are configured as high-quality inductors to achieve low phase noise; tapping that inductance enhances performance. Further phase noise improvements target the varactor. Diodes, the most common varactor, cause a small deviation in phase noise versus tuning range. Given the small deviation, phase noise is reported as a single value. With the growing popularity of MOS technologies, other varactors become available. An accumulation-mode MOS capacitor exhibits a phase noise deviation similar to the diode varactor. An inversion-mode MOS capacitor demonstrates large tuning range but sacrifices phase noise performance in the middle of the tuning range. Previous LC oscillator designs with inversion-mode MOS varactors measure phase noise at the limit of the tuning range where performance is best, and that single value is reported in accordance with industry practice. This work investigates phase noise performance over the entire tuning range where measured phase noise deviation exceeds 40dB for a 1.25pF inversion-mode MOS varactor. Instead of a large single varactor, a smaller varactor is utilized with switchable fixed capacitance. While an equal tuning range is achieved, the phase noise deviation is reduced by 30dB. To obtain a switchable fixed capacitance, a new switch is developed. Without the advantage of extra process layers, hot electron programming writes the device in two minutes, ultraviolet exposure erases in twenty minutes, and a 5nm oxide retains 95% of its charge for fifty years. When included in an LC oscillator, this switch enables a 42% tuning range at a center frequency of 1.585GHz using 23.4mW of power in a 0.25um process. The measured phase noise at 100kHz offset is -90dBc/Hz and the phase noise deviation is less than 10dB. The nonvolatile reprogrammable switch also circumvents limitations associated with use of bond-wire inductances. Variations in excess of 40% can be recalibrated post-packaging, ensuring that bond-wires can now be used repeatably, reliably, and cost-effectively as inductors in standard CMOS processes. From flannery at sensors.stanford.edu Thu Sep 26 11:14:14 2002 From: flannery at sensors.stanford.edu (Anthony Flannery) Date: Thu, 26 Sep 2002 11:14:14 -0700 Subject: Where is BCB? References: <20020926141928.47050.qmail@web11701.mail.yahoo.com> Message-ID: <3D934E76.9E4477A1@sensors.stanford.edu> An HTML attachment was scrubbed... URL: From pcastle at stanford.edu Fri Sep 27 10:00:47 2002 From: pcastle at stanford.edu (Joseph P Castle) Date: Fri, 27 Sep 2002 10:00:47 -0700 (PDT) Subject: Gold wafers in Balzers Message-ID: someone put wafers covered in gold into the balzers dummy box. This is strictly not allowed. No wafers other than the balzers dummies are allowed in that box, gold coated or not. pat From mtang at snf.stanford.edu Fri Sep 27 10:28:47 2002 From: mtang at snf.stanford.edu (Mary Tang) Date: Fri, 27 Sep 2002 10:28:47 -0700 Subject: Nano-Or Presentation Today Message-ID: <3D94954F.D98534F9@snf.stanford.edu> Greetings Labmembers: Nano-Or Technologies manufactures an novel optical profilometry system which can be used for nanometer-scale, 3-D mapping on transparent as well as non-transparent substrates. This system is said to be robust to vibration (no optical bench or special environmental controls required) and fast. They will be making a technical presentation, today (Friday) at 2 pm, in CIS-201 (upstairs from the breakroom). Any and all are welcome. Mary -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at snf.stanford.edu From guerra at par.stanford.edu Fri Sep 27 10:37:12 2002 From: guerra at par.stanford.edu (Ann Guerra) Date: Fri, 27 Sep 2002 10:37:12 -0700 (PDT) Subject: SPECIAL SEMINAR - Philips' Sigma Delta Group Message-ID: SPECIAL SEMINAR "Sigma Delta Modulation with Application in Super Audio CD" Derk Reefman and Erwin E. Janssen Philips Sigma Delta Group Eindhoven, The Netherlands Wednesday, October 2, 2002 10:00 a.m. CIS-101 Linvill Room ABSTRACT Super Audio CD is a new audio carrier, aimed at being the successor to CD, which uses `Direct Stream Digital' (DSD) as audio format. DSD is essentially a 1-bit bit stream, and, hence, Sigma Delta Modulation (SDM) is a critically important technique for Super Audio CD. In this presentation, some issues will be discussed which are important for applications of SDM in high end audio applications. Also, various design methods for SDMs will be discussed, including some recent developments which are aimed at improving the audio performance of a SDM. Also, a model will be discussed which explains some of the non-linear behaviour of 1-bit SDMs, such as idle tone behaviour and distortion. If time permits, and if there is interest, the general concept of Super Audio CD can also be discussed. From mtang at snf.stanford.edu Fri Sep 27 10:40:56 2002 From: mtang at snf.stanford.edu (Mary Tang) Date: Fri, 27 Sep 2002 10:40:56 -0700 Subject: Change in Nano-Or Presentation Message-ID: <3D949828.E3B10FB@snf.stanford.edu> Wups! Wrong time. Nano-Or will be here at 2:30 (or a little later), not 2 pm, as stated in my previous note (but it IS the same room, CIS 201). Sorry about that. Mary -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at snf.stanford.edu