From hphan at snf.stanford.edu Fri Aug 8 14:58:11 2003 From: hphan at snf.stanford.edu (Henry Phan) Date: Fri, 08 Aug 2003 14:58:11 -0700 Subject: 5% PMMA Message-ID: <3F341CF2.46116925@snf.stanford.edu> The standard PMMA 5% is here. I put it in the yellow cabinet. Sorry for the inconvenience. -- Henry _ _ _ _ Henry Q. Phan Stanford Nanofabrication Facility CIS Room 146, Mail Code 4070 Stanford, CA 94305 (650)725-3659 hphan at snf.stanford.edu From mtang at snf.stanford.edu Mon Aug 11 08:53:36 2003 From: mtang at snf.stanford.edu (Mary Tang) Date: Mon, 11 Aug 2003 08:53:36 -0700 Subject: Job Postings Message-ID: <3F37BBFF.BDFEEDF4@snf.stanford.edu> Greetings labmembers -- As some of you know, we maintain an informal (and somewhat discreet) database of open jobs and resumes. Although we at SNF certainly don't want to get into the job placement business, we do like to see our friends gainfully employed, preferably here at SNF. In response to some recent requests, we will be listing job openings posted by SNF labmembers. If you are interested, please check out the jobs webpage at: http://snf.stanford.edu/Affiliates/Jobs.html If you are interested in having a job posted here, please send me an email with your description. Thanks for your attention -- Mary -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From altug at stanford.edu Mon Aug 11 15:34:09 2003 From: altug at stanford.edu (Hatice Altug) Date: Mon, 11 Aug 2003 15:34:09 -0700 Subject: SOI thickness measurement by Nanospec? References: <3F26FE14.F9FD2C49@ssrl.slac.stanford.edu> Message-ID: <003401c36058$aee92790$dc5540ab@hatice> Hi all, I wonder if anybody currently using nanospec (or ellipsometer if possible) to measure thin silicon thickness on SOI wafer. My SOI wafer has 1um oxide and silicon with thickness ranging from 300nm-1500nm. I have used three programs written by labmembers but it could not measure my chips. Could you reply me if you know how to measure it? thank you, -hatice From grupp at snowmass.Stanford.EDU Mon Aug 11 17:39:19 2003 From: grupp at snowmass.Stanford.EDU (Dan Grupp) Date: Mon, 11 Aug 2003 17:39:19 -0700 (PDT) Subject: SOI thickness measurement by Nanospec? In-Reply-To: <003401c36058$aee92790$dc5540ab@hatice> Message-ID: prog 44 or 45 on ellispometer measure SOI (check the page in the manual with all the calculating routines, to see which parameters you want it to calc, and which you want to enter.) you tried prog 52 on nanospec in litho? written by Dan Connelly (i.e., good stuff) in the '90's. check the graph to see if the data matches the fit at all (if you haven't done this, push the "graph", then the keys "1" "2" "3" to clear it a nd replot your new data - the graph that comes when you first push graph is *old* data, not yours!). Destructive techniques: a)cleave, wet etch 6:1 1 min, then SEM. So thick ez to see. b)FIB cross-section only destroys a few square microns. On Mon, 11 Aug 2003, Hatice Altug wrote: > Hi all, > > I wonder if anybody currently using nanospec (or ellipsometer if possible) > to measure thin silicon thickness on SOI wafer. > My SOI wafer has 1um oxide and silicon with thickness ranging from > 300nm-1500nm. I have used three programs written by labmembers but it could > not measure my chips. > > Could you reply me if you know how to measure it? > > thank you, > > -hatice > > --------------------------------------------------------------------------- Dr. Daniel Grupp, Visiting Scholar Center for Integrated Systems Stanford University Stanford, CA 94305 (650) 724-6911 FAX: 723-4659 --------------------------------------------------------------------------- From mcvittie at snf.stanford.edu Tue Aug 12 15:42:09 2003 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Tue, 12 Aug 2003 15:42:09 -0700 Subject: SOI thickness measurement by Nanospec? References: <3F26FE14.F9FD2C49@ssrl.slac.stanford.edu> <003401c36058$aee92790$dc5540ab@hatice> Message-ID: <3F396D41.9E5F28E9@snf.stanford.edu> Hatice, Program 253 on the Nanospec 210XP allows you to create special programs for measuring dual films. To do this you will need a number of parameters to model the index and extinction coefficients over the wavelength range for the two films. Nanospec uses Cauchy models for both index and adsorption. For the top film, which is Si in this case, you need 2 parameters the index and 3 for the extinction coefficient. For the second film, which is oxide and has no losses, we only need 2 parameters. I have the parameters for poly-Si and oxide. Silicon is a little different than poly, so we really should be using slightly different parameters. I do not have them but they should be easily available. I will see if I can get them. Jim McVittie Hatice Altug wrote: > Hi all, > > I wonder if anybody currently using nanospec (or ellipsometer if possible) > to measure thin silicon thickness on SOI wafer. > My SOI wafer has 1um oxide and silicon with thickness ranging from > 300nm-1500nm. I have used three programs written by labmembers but it could > not measure my chips. > > Could you reply me if you know how to measure it? > > thank you, > > -hatice -------------- next part -------------- A non-text attachment was scrubbed... Name: mcvittie.vcf Type: text/x-vcard Size: 422 bytes Desc: Card for Jim McVittie URL: From george.c.lopez at intel.com Tue Aug 12 16:03:43 2003 From: george.c.lopez at intel.com (Lopez, George C) Date: Tue, 12 Aug 2003 16:03:43 -0700 Subject: Spin-on glass Message-ID: <54861D6B12931E4091AEEE0755125F5C10EA4B@fmsmsx410.fm.intel.com> Labmembers, Does anyone have any spin-on glass that they could lend me? I would really appreciate it. Thanks, George From mtang at snf.stanford.edu Tue Aug 12 16:19:39 2003 From: mtang at snf.stanford.edu (Mary Tang) Date: Tue, 12 Aug 2003 16:19:39 -0700 Subject: SpecMat Message-ID: <3F39760A.9878C8CB@snf.stanford.edu> Greetings labmembers -- As you know, the Special Materials Committee (SpecMat) was formed to help labmembers: 1.bring new chemicals and materials into the lab; and 2. learn how to use currently available or approved chemicals and materials in new ways. The primary considerations of the SpecMat are: 1. to ensure safe use of new chemicals and materials; and 2. to minimize the possibility of contamination which may affect the research of others in the lab. SpecMat sets the policy for the use of new, or existing materials, usually on a case-by-case basis. The committee considers such issues as storage, handling, waste and potential contamination issues with respect to the lab and equipment. We are committed to working with you to meet your processing needs, in a timely manner. SpecMat currently consists of Jim McVittie, Mahnaz Mansourpour, Mike Deal, John Shott, and Mary Tang. Please submit any new chemicals/materials requests to SpecMat at snf.stanford.edu, so that we all receive the request and it is archived. All requests received will be tabulated and summarized on a monthly basis (see below, http://snf.stanford.edu/Materials/SpecMat/Requests.html for our first report). We hope to reduce turnaround time and minimize any redundancy by coordinating our responses. We have also begun the slow process of trying to collate previous new chemicals/materials requests received in the past. We hope to develop and maintain a labmember community accessible database of approved chemicals/materials, but as these requests have been distributed among several staff members, with varying levels of supporting documentation (MSDS, application notes, literature references), it will be a long, slow task. We ask for your patience. In the meantime, please make use of SpecMat at snf.stanford.edu, both to submit your requests, and to learn about any new chemicals/materials/processes you may be considering -- one of your fellow labmembers may have already done the homework! Your friendly neighborhood SpecMat committee -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at snf.stanford.edu Thu Aug 14 16:30:50 2003 From: mtang at snf.stanford.edu (Mary Tang) Date: Thu, 14 Aug 2003 16:30:50 -0700 Subject: Gladys is on leave Message-ID: <3F3C1BAA.80EEBC2B@snf.stanford.edu> Hello labmembers -- As many of you may have heard, Gladys Sarmiento (otherwise known as the Diffusion Queen) has reinjured her wrist, requiring extensive surgery to repair. Until her return, please contact the following SNF staff members for issues you would normally bring to Gladys: - LPCVD (including poly, nitride, LTO): Maurice Stevens (maurice at snf) - Oxidation furnaces: Nancy Latta (latta at snf) - wbmetal, wbnitride: Uli Thumser (uli at snf) - wbdiff, wbnonmetal, wbsilicide: Henry Phan (hphan at snf) - Special projects/other issues: Mary Tang (mtang at snf) and Mahnaz Mansourpour (mahnaz at snf) The process staff has Gladys' calendar, so if you have previously scheduled training time or project time with her, you should still be covered unless otherwise notified. (Many thanks to Nancy, Maurice, Henry, and Mahnaz for stepping in to fulfill Gladys' obligations, in addition to their own.) It is uncertain how long she will be out. We all hope for her quick recovery. If you would like to join us in wishing her well, please take a moment to sign the card which is posted outside the gowning room door. Mary -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From jedwards at nishi.hostpilot.com Sun Aug 17 15:39:54 2003 From: jedwards at nishi.hostpilot.com (Jane Edwards) Date: Sun, 17 Aug 2003 15:39:54 -0700 Subject: Last Chance to Register: Internatl Workshop on Metal Gate/Work Function Science & Eng. Message-ID: Final Announcement ? Registration extended to August 25, 2003 International Workshop on Metal Gate/Work Function Science and Engineering http://www.stanford.edu/dept/chemistry/faculty/chidsey/public/Workfunction_Engineering/index.html Stanford University, Stanford, CA (Braun Auditorium) August 28-29, 2003 ?As we come closer to the limit of scaled CMOS, metal gate electrodes and high-K gate dielectrics are indispensable alternatives to polysilicon/silicon dioxide gates, and a broad spectrum of technical and scientific challenges are facing us. We believe this workshop will provide an exciting opportunity and forum to discuss metal gate and workfunction issues, and we strongly invite your participation.? Conference Organizers: Yoshio Nishi, Stanford University Paul McIntyre, Stanford University Luigi Colombo, Texas Instruments Chris Chidsey, Stanford University Agenda Thursday, August 28 1. Introduction and Overview, Y. Nishi 2. Overview on CMOS Transistor Requirements (Gate Stack, Channel) a. ?Metal gate work function needs from device perspective?, Y. Taur, b. ?CMOS scaling limits with high K/metal gate?, H. Iwai c. ?Planar CMOS and alternative structures?, D. Antoniadis 3. Physics of Workfunctions a. ?Theory of workfunctions?, W. Harrison b. ?Spectroscopic determination of workfunctions?, P. Pianetta 4. Metal Gate Approaches for CMOS a. ?High-k metal gate overview?, T. Nabatame, MIRAI project b. ?Dual layer metal approach?, S. Hung c. ?Single layer metal approach?, T.J. King d. ?Metal gate CMOS integration challenges?, M. Rodder e. ?Metal gate electrodes?, V. Misra Friday, August 29 5. Metal Dielectric Interface Structure and Physics a. ?Multiscale interface modeling?, K.J. Cho b. ?Local electronic structure of high-k gate stacks?, J. Robertson c. ?Gate/dielectric interface reactions?, R. Wallace 6. Mobility, High-k, SiON, Metal Gates and Strained Si (Theory and Experiment) a. ?Integration issues: metal gates on high mobility substrates?, S. Biesemans b. ?Material aspects of high K gate integration?, S. Guha c. ?Ge channel MOSFETs?, C.-O. Chui 7. Electrodes and Contacts a. ?Schottky barrier engineering?, D. Connelly b. ?Channel engineering and metal gates?, K. Uchida c. ?Application and issues of silicides and metal integration?, K. Goto d. ?Metal contacts and electrodes?, (pending) Panel Discussion - to be held at 7:30pm on Aug.28 after dinner at the Stanford Faculty Club Moderator: Paul McIntyre Panel: Bin Yu, R. Wallace, K. Goto, D. Antoniadis, R. Gassar (tentative) Registration (due August 25) is available online at http://www.stanford.edu/dept/chemistry/faculty/chidsey/public/Workfunction_Engineering/index.html $300 (regular attendees ? waived for invited speakers) $60 (students) From nmehenti at stanford.edu Tue Aug 19 13:31:05 2003 From: nmehenti at stanford.edu (Neville Mehenti) Date: Tue, 19 Aug 2003 13:31:05 -0700 Subject: shadow masks Message-ID: <5.2.1.1.2.20030819132918.0247d330@nmehenti.pobox.stanford.edu> Hello, Does anybody know a good, and preferably cheap, vendor for shadow masks? (my features are only 50 microns). any info would be much appreciated. thanks very much, neville From cshen at briontech.com Wed Aug 20 10:49:01 2003 From: cshen at briontech.com (cshen at briontech.com) Date: Wed, 20 Aug 2003 10:49:01 -0700 (PDT) Subject: Spin-on glass question Message-ID: <41357.171.64.101.47.1061401741.squirrel@mail.briontech.com> Dear Labmembers, I wish to fill 1:1 aspect ratio trenches, PECVD SiO2 forms voids. I wish to use spin-on glass to planarize the features and then do SiO2 deposition. Can anybody give me suggestions on what kind of SOG to use? I wish to have no crack, no UV absorption. Any information will be greatly appreciated. Chongfei From fumin at stanford.edu Wed Aug 20 14:59:52 2003 From: fumin at stanford.edu (Fu-Min Wang) Date: Wed, 20 Aug 2003 14:59:52 -0700 Subject: Does anyone know Stickman pattern? Message-ID: <003401c36766$d88e5ec0$8d6240ab@FUMIN> Hello, Does anyone know Stickman patterns used to measure overlay with a subtractive process? I need to compare them with my electrical test structures. Your information is highly appreciated. Fumin From mahnaz at snf.stanford.edu Wed Aug 20 16:50:36 2003 From: mahnaz at snf.stanford.edu (Mahnaz) Date: Wed, 20 Aug 2003 16:50:36 -0700 Subject: resist bottle Message-ID: <3F44094C.D5452929@snf.stanford.edu> Hello all There is a bottle of resist in the yellow cabinet labeled 5214E. Please come and see me ASAP. mahnaz From goksenin at stanford.edu Thu Aug 21 10:31:27 2003 From: goksenin at stanford.edu (Goksen Yaralioglu) Date: Thu, 21 Aug 2003 10:31:27 -0700 Subject: lithium-niobate Message-ID: <5.1.1.5.2.20030821102458.00b0c478@goksenin.pobox.stanford.edu> Hello all, Does anyone have experience with Li-Niobate wafers? I have to do a simple lithography on a Li-Nb wafer. But, I am not quite sure how to ramp the temperature during the singe and photoresist bake. Any idea? Thanks --------------------------------------------------- Goksen G. Yaralioglu, PhD Stanford University Ginzton Lab. Stanford CA, 94305 e-mail: goksenin at stanford.edu off tel.: (650) 725 49 42 --------------------------------------------------- From shott at snf.stanford.edu Sun Aug 24 10:52:44 2003 From: shott at snf.stanford.edu (John Shott) Date: Sun, 24 Aug 2003 10:52:44 -0700 Subject: Netscape and Star Office Message-ID: <3F48FB6C.7040404@snf.stanford.edu> SNF Labmembers: You will notice a slight change on your desktop ... the Netscape icon will no longer show up in the upper left corner of your desktop. However, you can still easily start the Netscape web browser by clicking (once, not twice) the blue and green "earth" icon with the red clock hands that appears on the left of your task bar. Also, if you click the blue and white Star at the far left of the task bar, this will allow you to install Star Office that is a open source version of MS Office that will allow you to open, edit, and write MS Office compatible *.doc, *.xls, and *.ppt files. When you go through the installation process, this will give you the choice as some point of doing a WorkStation installation that only consumed 0.6 MB of space or a "Local Installation" that consumes nearly 320 MB of space. Please be careful to select the WorkStation installation option. Thanks for your continued support, John From nmehenti at stanford.edu Wed Aug 27 12:25:16 2003 From: nmehenti at stanford.edu (Neville Mehenti) Date: Wed, 27 Aug 2003 12:25:16 -0700 Subject: shadow masks information Message-ID: <5.2.1.1.2.20030827120752.0259b5b0@nmehenti.pobox.stanford.edu> Hello, So I got some responses from my shadow mask inquiry, and I thought I'd just send out some useful information about it. After contacting a few vendors about their shadow mask services, there seem to be two that are promising: 1. Photo Etch Technology (www.stencil.com) 978-805-5050 They make their shadow masks in stainless steel, and the masks are 2-25 mil thick (50-625 microns). They define their features either through chemical etching (if feature is >4 mil), or laser cutting. As for data preparation, most drawing formats are accepted, and if you have a simple geometry or array, a hand drawing with dimensions is acceptable as well. A 15x15 inch steel patterned sheet can cost in the ballpark of $250 if it is chemically etched. (Yes, so you can get about 16 masks from this one sheet). 2. Photo Sciences 408-748-7673 This company charges a bit more, but can do a better job if you need smaller features. For features over 5 mil, they use stainless steel. But for smaller features (a few microns), they can make fine edges by using a bimetal Ni/Be-Cu mask, but the structural integrity of the mask then becomes a concern. They take all drawing formats, but may charge for data conversion. A 4x4 inch mask made in stainless steel can cost about $500. Roger Horstman is the guy to talk to at this company, he is very helpful. Hope this helps those who were interested, Neville From vossough at snf.stanford.edu Wed Aug 27 13:52:10 2003 From: vossough at snf.stanford.edu (Kris Vossough) Date: Wed, 27 Aug 2003 13:52:10 -0700 (PDT) Subject: Lost items Message-ID: Friends and colleagues, I seem to have lost the content of my cleanroom storage during the last cleanout. Although, I have been assured by the staff that nothing has been discarded, I can not locate these items. Among them, is a notebook with valuable process information that some of you have been asking about. Please let me know if you have any information about this. Thank you, --Kris From sluesch at stanford.edu Thu Aug 28 17:46:41 2003 From: sluesch at stanford.edu (Silvia Luescher) Date: Thu, 28 Aug 2003 17:46:41 -0700 Subject: SiO evaporation Message-ID: <5.2.0.9.2.20030828174042.02df4628@sluesch.pobox.stanford.edu> Hi All, I am having problems with the adhesion of thermally evaporated silicon monoxide to my substrate (InAs or InAlAs). Has anyone out there some suggestions on how to improve the sticking of SiO films? Thanks, Silvia