From hector at nanodevices.com Tue Mar 4 09:46:34 2003 From: hector at nanodevices.com (Hector Cavazos) Date: Tue, 4 Mar 2003 09:46:34 -0800 Subject: missing wafers! Message-ID: Hello all, I am missing a 4" wafer box with 8 wafers. The box was in a clear zip lock bag along with a run sheet printed on blue cleanroom paper. The run sheet should say NanoDevices on the top. The last place I recall having it was near the Tylan computer and/or the table in front of the P5000 etcher on Friday Feb 28. If you inadvertently took it or find it, could you please give the box to Mahnaz as she knows where my desk is. Thanks for the help! Desperately, Hector From pease at cis.stanford.edu Tue Mar 4 16:43:09 2003 From: pease at cis.stanford.edu (Fabian Pease) Date: Tue, 04 Mar 2003 16:43:09 -0800 Subject: New Course Message-ID: <5.1.0.14.2.20030304163109.024a49d8@cis.stanford.edu> At short notice I have been freed up to offer the course below in the spring which may be useful to those who use electron and ion beam tools and even of interest to those who don't. The time and place are quite flexible. Fabian Pease New Course: EE392R "Charged Particle Optics" Instructor: R. Fabian Pease To be offered: Spring 2002-3 Pre-requisites: Undergraduate-level geometrical optics and vector calculus, or EE217 Description: Electron optics of charged particle instruments including the transmission electron microscope, the scanning electron microscope and related tools, mass and energy spectrometers, electron beam lithography tools, focused ion beam systems, electron diffraction, proximal probe tools such as the scanning tunneling microscope. Specific topics include sources, first order focusing of electrons and ions, third order aberrations, space-charge effects and diffraction. At the end of the course the student should be able to compute the optical parameters of axially-symmetric magnetic and electric lenses and be familiar with the principles of operation of the above charged particle systems and the factors limiting their performance. Examinations: One in-class mid-term and a take-home final examination. May be taken for letter grade or P/NC Initial time: MWF 11-1150 Initial Room: 160-314 -------------- next part -------------- An HTML attachment was scrubbed... URL: From kaima at stanford.edu Tue Mar 4 17:41:12 2003 From: kaima at stanford.edu (Kai Ma) Date: Tue, 4 Mar 2003 17:41:12 -0800 (PST) Subject: the 31st annual Electronic Materials Symposium Message-ID: Greetings! We would like to announce the 31st annual Electronic Materials Symposium. The EMS is a one-day inter-disciplinary conference that presents a broad spectrum of expert views on problems at the intersection of electronic materials and devices. The conference will be held on Friday April 11, 2003 in Santa Clara. We have a great group of speakers scheduled for this years' symposium, including talks on spintronics, nanotubes, MEMS, and polymer electronics. To register online and for more information about this year's symposium, please visit www.electronicmaterialssymposium.org. To register by mail and for more information about the symposium, please refer to the flyers in department building. The deadline for discounted early registration is March 21st. Before March 21st, the student registration fee is $45. For undergraduates: There is an undergraduate award of $250. The application form is on our website, and also attached with this email. (I heard they typically get very few applicants from Stanford. So there is a big opportunity to win.) From nmehenti at stanford.edu Wed Mar 5 12:57:08 2003 From: nmehenti at stanford.edu (Neville Mehenti) Date: Wed, 05 Mar 2003 12:57:08 -0800 Subject: Transparency mask update Message-ID: <5.1.0.14.2.20030305125210.02c27ce0@nmehenti.pobox.stanford.edu> Hello SNF Users, For those who have been making transparency masks on mylar from Linotext, you should know that they no longer make films for such purposes (not sure why they stopped). Anyway, they referred me to a company called MediaMorphosis in Mountain View. They have a 3600 dpi printer for printing masks and it is about $20 per transparency. They prefer eps files, but can also work with other files (such as Illustrator). I recently had a mask printed by them, and my 20 um features looked sharp under a microscope. Their phone # is 650-938-0150, and they can deliver to Stanford. Hope this helps, Neville From arjang at Stanford.EDU Wed Mar 5 14:58:07 2003 From: arjang at Stanford.EDU (Arjang Hassibi) Date: Wed, 5 Mar 2003 14:58:07 -0800 (PST) Subject: Transparency mask update In-Reply-To: <5.1.0.14.2.20030305125210.02c27ce0@nmehenti.pobox.stanford.edu> Message-ID: Hi all, Reagrding mylar masks, there is another company which has the same services as Linotext (or possibly MediaMorphosis) called ArtnetPro. I have worked with them and their masks have very good quality (originaly printed for PCB application). They are loacted at San Jose (408)954-8383, and they can deliver to SNF as well. Best, Arjang On Wed, 5 Mar 2003, Neville Mehenti wrote: > Hello SNF Users, > For those who have been making transparency masks on mylar from Linotext, > you should know that they no longer make films for such purposes (not sure > why they stopped). > Anyway, they referred me to a company called MediaMorphosis in Mountain > View. They have a 3600 dpi printer for printing masks and it is about $20 > per transparency. They prefer eps files, but can also work with other > files (such as Illustrator). I recently had a mask printed by them, and my > 20 um features looked sharp under a microscope. > Their phone # is 650-938-0150, and they can deliver to Stanford. > Hope this helps, > Neville > Arjang Hassibi Office: CIS-029, Electrical Engineering Dept. Stanford University, CA 94305, MC 4070 Tel: (650)725-3658 From mahnaz at snf.stanford.edu Thu Mar 6 11:33:45 2003 From: mahnaz at snf.stanford.edu (Mahnaz) Date: Thu, 06 Mar 2003 11:33:45 -0800 Subject: Request Message-ID: <3E67A299.8683C803@snf.stanford.edu> Hello all, It has been a while that most morning Uli, Henry and I clean up beakers, containers from wbgeneral at Headway bench. We really like to keep the litho cassettes KOH free. I have asked Uli to order little baskets for the piece developing for the headway bench area and there are many beakers and containers under the table where the hot plates (next to headway) are so I do not understand why is this happening?!?! Second request is that every morning staff picks up used gloves, wipes, cassettes that are not back in the box and things left all over the place. I like to remind everyone "this is a shared facility" and every one is responsible for cleanliness of the lab. There are Four trash cans in Litho area, please use them. AND PLEASE DO NOT STICK YOUR TAPES ALL OVER THE TABLES, I AM TIRED OF CLEANING THEM. Suggestion and comments are welcome as usual. mahnaz From shott at snf.stanford.edu Fri Mar 7 13:25:54 2003 From: shott at snf.stanford.edu (John Shott) Date: Fri, 07 Mar 2003 13:25:54 -0800 Subject: Those pesky green newts on the Sunrays ... Message-ID: <3E690E62.AC9C0E1D@snf.stanford.edu> SNF Lab Members: I'm sure that many of you have noticed that our "cardless" Sunrays keep on showing up with green newts instead of the login window. While we are working to resolve that issue, let me remind you how to avoid being inconvenienced by this situation: USE A SMARTCARD!!! For reasons that I can't fully explain, sessions running on a smart card are not experiencing the green newt problem. Therefore, if you insert a smartcard into a "green newted" Sunray, you will get a login window and once you have that session running, it will be immediately available to you whereever you are in the lab. You should all ALWAYS use a smartcard for your coral sessions when in the lab. Here's why: 1. It actually consumes fewer "Coral resources" to start a Coral session when you enter the lab and keep it running the entire time you are in the lab than to start up Coral, enable some equipment, kill Coral ... (time passes) ... start up Coral, disable the equipment, stop Coral. 2. If you have a smartcard Coral session, you can pull out your smart card, let someone insert their card to quickly enable/disable/reserve something, and then resume your activity immediately ... it's the neighborly way to run Coral in a shared facility. 3. It saves you time ... you don't have to login and wait for Coral to start each time you need to do something. 4. Finally, although we don't charge for it, we actually track (and report to NSF) "hours of cleanroom usage". The only way we can automatically measure that is by the cumulative time that you have an in-lab Coral session running. If you use the login/enable/logout method, you are greatly underestimating the time that you actually spend in the cleanroom which, in turn, causes NSF to underestimate the level of activity in this facility which, in the long run, makes them less likely to invest additional funds in our operation. So, we are aware of and working to fix the "green newt" problem ... but, use a smart card and you won't have to worry!!! Thank you for your continued support, John From wistey at snowmass.Stanford.EDU Mon Mar 10 13:30:38 2003 From: wistey at snowmass.Stanford.EDU (Mark Wistey) Date: Mon, 10 Mar 2003 13:30:38 -0800 (PST) Subject: Bromine-methanol Message-ID: <200303102130.NAA25626@snowmass.Stanford.EDU> I was wondering, does anyone have experience with a bromine-methanol etch? We need to remove indium and heavy metals (As, Sb) from some wafer holders which are going into ultrahigh vacuum. We've been told by one source not to use bromine-methanol unless we understand the "do's and don'ts"... but not what those are. Presumably mixing of acid and solvent...? Thanks for any help or pointers... - Mark From mcvittie at snf.stanford.edu Mon Mar 10 13:35:41 2003 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Mon, 10 Mar 2003 13:35:41 -0800 Subject: STS Talk on Their Latest Deep Silicoin Etch Tool Message-ID: <3E6D052D.5301D901@snf.stanford.edu> SNF Lab Members, After the recent talk by Alcatel, I asked STS if they could give a similar talk on their latest deep Si etch tool. The talk will given next Monday, March 17, in CISX 101 at 3 pm. The speaker will be Richard Barnett of STS Wales (richard_barnett at stsystems.co.uk). All are welcome. Jim McVittie Title: Surface Technology Systems High Rate Si Etch M Source. Abstract: The STS ASE(superscript: HRM(TM)) is the result of the extensive development work undertaken to improve the basic Bosch process used on the original ASE(superscript: (TM))-SR tool. The HRM gives a three-fold increase of etch rate over the SR as well as numerous other benefits obtained through the different process chamber architecture and the various process hardware and software improvements which gives the user extra process flexibility. This presentation is an introduction to the STS ASE (superscript: HRM(TM)) system, with a description of the background to the development work, a brief explanation of the tool configuration and examples of the process results obtained. From shott at snf.stanford.edu Wed Mar 12 08:35:51 2003 From: shott at snf.stanford.edu (John Shott) Date: Wed, 12 Mar 2003 08:35:51 -0800 Subject: Unexpected Coral outage ... Message-ID: <3E6F61E7.A9970E75@snf.stanford.edu> SNF labmembers: As you have noticed in the lab, the sunray server is down ... this is due to a Sun field service visit to replace a processor that had failed a few days ago. Unfotunately, we (Team Coral) did not get that announcement out in a timely fashion. I apologize for that inconvenience. The machine may be back up as quickly as 9:30 a.m. and should certainly be up by about 10 a.m. In the meantime, for your processing convenience, I've issued the "all on" command to all hardware interlocks. Thank you for your continued support. John From jerabek at snf.stanford.edu Fri Mar 14 11:19:49 2003 From: jerabek at snf.stanford.edu (Paul Jerabek) Date: Fri, 14 Mar 2003 11:19:49 -0800 (PST) Subject: LRS-18 maskwriter Message-ID: To whom it may concern, LRS-18 mask writer is down with a serious problem. It looks to me as a problem with "head touch down detector". I have called Micronic service to address the issue. They will be here Tusday morning 3/18/03. -Paul From mcvittie at snf.stanford.edu Mon Mar 17 10:12:41 2003 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Mon, 17 Mar 2003 10:12:41 -0800 Subject: Reminder: STS Etch Talk Today at 3pm Message-ID: <3E761019.A6BE9756@snf.stanford.edu> SNF Lab Members, Richard Barnett of STS Wales will give a talk this afternoon (Monday, March17) in CISX 101 at 3pm entitled Surface Technology Systems High Rate Si Etch M Source. Abstract: The STS ASE(superscript: HRM(TM)) is the result of the extensive development work undertaken to improve the basic Bosch process used on the original ASE(superscript: (TM))-SR tool. The HRM gives a three-fold increase of etch rate over the SR as well as numerous other benefits obtained through the different process chamber architecture and the various process hardware and software improvements which gives the user extra process flexibility. This presentation is an introduction to the STS ASE (superscript: HRM(TM)) system, with a description of the background to the development work, a brief explanation of the tool configuration and examples of the process results obtained. From masafumi at stanford.edu Tue Mar 18 12:05:47 2003 From: masafumi at stanford.edu (masa) Date: Tue, 18 Mar 2003 12:05:47 -0800 Subject: inquiry Message-ID: <20030318120426.4433.MASAFUMI@stanford.edu> Hello SNF member, I'm visiting scholar in ME. I'm going to use porous silicon for my research. So I'm wondering if someone already has been working on porous silicon and helps me some. If someone has any information, please let me know. Thanks. Masa From mikebell at stanford.edu Thu Mar 20 12:35:27 2003 From: mikebell at stanford.edu (Mike Bell) Date: Thu, 20 Mar 2003 12:35:27 -0800 Subject: Scheduled coral downtime Message-ID: <3E7A260F.B61FDF7@stanford.edu> SNF Lab Members: This Friday, March 21, we are planning to take the Coral system down in order to replace a CPU in one of the servers. This downtime is scheduled to start at 8 a.m. and we expect to be back on-line at 10 a.m. We expect to issue an equipment "all on" so that work in the lab will be minimally disturbed and hope that you will all quickly enable equipment once normal coral operations are restored. While e-mail receipt and delivery on the mail server will not be affected, you will not be able to access your messages until the maintenance is done. Thanks for your continued support, Mike From kaima at snowmass.Stanford.EDU Thu Mar 20 17:35:55 2003 From: kaima at snowmass.Stanford.EDU (Kai Ma) Date: Thu, 20 Mar 2003 17:35:55 -0800 (PST) Subject: Reminder: the 31st annual Electronic Materials Symposium Message-ID: This is a kind reminder. The 31st EMS early registration deadline is March 28th. After that date, the registration fee is higher. The deadline for undergraduate scholarship is March 21st. ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ We would like to announce the 31st annual Electronic Materials Symposium. The EMS is a one-day inter-disciplinary conference that presents a broad spectrum of expert views on problems at the intersection of electronic materials and devices. The conference will be held on Friday April 11, 2003 in Santa Clara. We have a great group of speakers scheduled for this years' symposium, including talks on spintronics, nanotubes, MEMS, and polymer electronics. To register online and for more information about this year's symposium, please visit www.electronicmaterialssymposium.org. To register by mail and for more information about the symposium, please see the attached invitation. The deadline for discounted early registration is March 28th. Before March 28th, the student registration fee is $45. For undergraduates: There is an undergraduate award of $250. The application form is on our website, and also attached with this email. (I heard they typically get very few applicants from Stanford. So there is a big opportunity to win.) -------------- next part -------------- A non-text attachment was scrubbed... Name: EMS 2003 invitation.pdf Type: application/pdf Size: 219822 bytes Desc: URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: ugaward03.pdf Type: application/pdf Size: 17238 bytes Desc: URL: From jerabek at snf.stanford.edu Sat Mar 22 12:51:24 2003 From: jerabek at snf.stanford.edu (Paul Jerabek) Date: Sat, 22 Mar 2003 12:51:24 -0800 (PST) Subject: LRS-18 Message-ID: Micronic field service fixed the mask writer by Wednesday evening (3/19/03). Since then I have written 20 masks but, unfortunately, today it failed again. Will call service back first thing Monday. -Paul From BGreene at stanford.edu Mon Mar 24 10:40:44 2003 From: BGreene at stanford.edu (Brian Greene) Date: Mon, 24 Mar 2003 10:40:44 -0800 Subject: Brian Greene - Ph.D. Dissertation Defense, Wednesday 9AM Message-ID: <000e01c2f234$e177a110$aa6040ab@GreeneMobile> Department of Applied Physics - University Ph.D. Dissertation Defense ************************************************************* Lateral Solid Phase Epitaxy of Silicon and Application to the Fabrication of MOSFETs Brian J. Greene Advisors: Prof. J. F. Gibbons and Prof. J. L. Hoyt 9:00 AM Wednesday, March 26, 2003 Center for Integrated Systems Extension Auditorium (CIS-101X) Refreshments at 8:45 AM ************************************************************* Thin film silicon on insulator fabrication is an increasingly important technology requirement for improving performance in future generation devices and circuits. One process for SOI fabrication that has recently been generating renewed interest is Lateral Solid Phase Epitaxy (LSPE) of silicon over oxide. This process involves annealing amorphous silicon that has been deposited on oxide patterned Si wafers. The (001) Si substrate forms the crystalline seed for epitaxial growth, permitting the generation of Si films that are both single crystal, and oriented to the substrate. This method is particularly attractive to fabrication that requires low temperature processing, because the Si films are deposited in the amorphous phase at temperatures near 525?C, and crystallized at temperatures near 570 ?C. It is also attractive for applications requiring three dimensional stacking of active silicon device layers, due to the relatively low temperatures involved. For sub-50 nm gate length MOSFET fabrication, an SOI thickness on the order of 10 nm will be required. One limitation of the LSPE process has been the need for thick films (0.5 - 2 ?m) and/or heavy P doping (1019 - 1020 cm-3) to increase the maximum achievable lateral growth distance, and therefore minimize the area on the substrate occupied by seed holes. This talk will discuss the characterization and optimization of process conditions for large area LSPE silicon film growth, as well as efforts to adapt the traditional LSPE process to achieve ultra-thin SOI layers (Tsilicon ? 25 nm) while avoiding the use of heavy active doping layers. MOSFETs fabricated in these films that exhibit electron mobility comparable to the Universal Si MOS Mobility will be described. -------------- next part -------------- An HTML attachment was scrubbed... URL: From jerabek at snf.stanford.edu Wed Mar 26 08:46:04 2003 From: jerabek at snf.stanford.edu (Paul Jerabek) Date: Wed, 26 Mar 2003 08:46:04 -0800 (PST) Subject: LRS-18 Message-ID: Micronics field service fixed the system Monday morning 3/24/03.It's been running well since then. -Paul From rcrane at snf.stanford.edu Thu Mar 27 13:51:43 2003 From: rcrane at snf.stanford.edu (Dick Crane) Date: Thu, 27 Mar 2003 13:51:43 -0800 Subject: Free Vacuum Technology course 4/23/03 Message-ID: <3E83726F.D6C871EE@snf.stanford.edu> Dear lab member or building dweller: Varian Vacuum Technologies and the Stanford Nanofabrication Facility are pleased to offer a free vacuum short course at Stanford University on Wednesday, April 23rd, from 10:00 to 12:30 (see attached announcement). The speaker is Johan De Rijke. Johan has given this short course at Stanford and SLAC over the last few years. From all reports the subject material is always well received by those in attendance. The seminar will be held in CISX101. A complimentary lunch is included. Please pass the attached notice on to anyone you think might be interested. An RSVP is requested in order to insure an adequate number of course manuals, and to aid in the luncheon preparation. Please contact: Bill Waters, Varian Vacuum Technologies account manager, at bill.waters at varianinc.com. Thanks, Dick Crane -------------- next part -------------- A non-text attachment was scrubbed... Name: Notice for UHV Technical Seminar (Stanford 4-23-03)1.doc Type: application/msword Size: 76288 bytes Desc: not available URL: From awheeler at stanford.edu Mon Mar 31 08:07:52 2003 From: awheeler at stanford.edu (Aaron Wheeler) Date: Mon, 31 Mar 2003 08:07:52 -0800 Subject: thesis defense -- microfluidics Message-ID: <3E8867D8.AAAAA5B2@stanford.edu> Department of Chemistry - University Ph.D. Dissertation Defense ************************************************** Manipulation and Analysis of Single Cells with Microfluidics Aaron Wheeler Advisor: Richard N. Zare 3:15 PM Thursday, April 3, 2003 Braun Auditorium (Mudd Building) ************************************************** Analysis of the contents and/or behavior of individual cells is of great interest because there is much to learn from cell-to-cell heterogeneity. Microfluidics, with cell-like dimensions (10-100 um) and potential for highly-integrated, parallel-scale analyses, has been an attractive technology for this goal; however, the inherent challenges of isolating individual cells from bulk populations have hindered the development of microfluidics-based methods. In this talk, several novel strategies for the isolation of individual cells using microfluidic devices constructed from both glass and poly(dimethylsiloxane) (PDMS) will be presented. The results of a variety of experiments, including, cell viability assays, separation and detection of cell contents, and multistep receptor-mediated calcium flux measurements will also be presented. -------------- next part -------------- A non-text attachment was scrubbed... Name: awheeler.vcf Type: text/x-vcard Size: 268 bytes Desc: Card for Aaron Wheeler URL: From mahnaz at snf.stanford.edu Mon Mar 31 10:40:29 2003 From: mahnaz at snf.stanford.edu (Mahnaz) Date: Mon, 31 Mar 2003 10:40:29 -0800 Subject: Litho Wip rack Message-ID: <3E888B9D.72874BD7@snf.stanford.edu> Hello all, This morning I found one cassette from diffusion and one from Wbgeneral on the wip rack with some wafers in them and no name on the boxes. The litho rule is that You are not allowed to bring other area's cassette in to litho and litho cassettes stays only in litho. Please put your name and phone # on the box, boxes with no information will get cleaned up with out prior warning. Tomorrow I will clean up the rack . mahnaz From yy7343 at hotmail.com Mon Mar 31 12:46:27 2003 From: yy7343 at hotmail.com (Yahong Yao) Date: Mon, 31 Mar 2003 12:46:27 -0800 Subject: Wet etching of Si (110) Message-ID: Dear Labmembers, I want to make a through hole (500um*500um) in Si substrate with wet etching (KOH or TMAH). I have done a lot of experiments with Si (100). As we all know, for Si (100), we need to open the mask much larger than the dimensions we need on the other side. Now I don't have the extra areas to waste on the wafer. I am thinking of using Si (110) which should give a straight profile, but don't have much experience with that. Can anyone share some insights, for example, etching rates, possible pitfalls? Most literatures also talk about Si(100) instead of Si(110), why? Thank you very much. Best Regards, Yahong _________________________________________________________________ Add photos to your e-mail with MSN 8. Get 2 months FREE*. http://join.msn.com/?page=features/featuredemail From pease at cis.stanford.edu Mon Mar 31 14:33:22 2003 From: pease at cis.stanford.edu (Fabian Pease) Date: Mon, 31 Mar 2003 14:33:22 -0800 Subject: Charged particle optics course Message-ID: <5.1.0.14.2.20030331143122.024e3760@cis.stanford.edu> This course has been approved for offering this quarter and is described below and in the attachment. New Course: EE392R "Charged Particle Optics" Instructor: R. Fabian Pease To be offered: Spring 2002-3 Pre-requisites: Undergraduate-level geometrical optics and vector calculus, or EE217 Description: Electron optics of charged particle instruments including the transmission electron microscope, the scanning electron microscope and related tools, mass and energy spectrometers, electron beam lithography tools, focused ion beam systems, electron diffraction, proximal probe tools such as the scanning tunneling microscope. Specific topics include sources, first order focusing of electrons and ions, third order aberrations, space-charge effects and diffraction. At the end of the course the student should be able to compute the optical parameters of axially-symmetric magnetic and electric lenses and be familiar with the principles of operation of the above charged particle systems and the factors limiting their performance. Examinations: One in-class mid-term and a take-home final examination. May be taken for letter grade or P/NC Initial time: MWF 11-1150 Initial Room: 160-314 Specific Topics: First order focusing, Electron and ion sources, Third-order aberrations of rotationally symmetric electron and ion lenses Space charge effects, Non-rotationally-symmetric lenses, Energy- and mass-spectrometry Applications to specific instruments (e.g. TEM, SEM, FIB, electron beam pattern generators) -------------- next part -------------- An HTML attachment was scrubbed... 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