From beckwith at cis.stanford.edu Mon Nov 3 13:29:24 2003 From: beckwith at cis.stanford.edu (Sharleen Beckwith) Date: Mon, 3 Nov 2003 13:29:24 -0800 Subject: how to hang your "booties" on your lab coat Message-ID: Dear Fellow Lab Users: Your "booties" should never touch your lab coat, and they should definitely NEVER touch the lab coat hanging next to yours. Please snap your "booties" to the sleeve of your lab coat. If there are no snaps on the sleeve put the "booties" in the leg of your lab coat and tie them in there. I keep finding other peoples "booties" hanging on the hanger hook (!), or snapped to the neck of their lab coat, rubbing on MY lab coat. Your booties are NOT clean. Please stop doing this. I do not want your dirt on my lab coat. This makes me have to get a whole new suit, and you know what a pain that is. It also makes me REALLY crabby. Please stop hanging your "booties" on your lab coat incorrectly. Please stop doing this. Thank you. -- Mr. Bush "calls his biggest fundraisers Rangers and Pioneers. But today, we stand together with thousands in Burlington, Vermont and tens of thousands more, standing with us right now in every state in this nation. And we call ourselves, simply, Americans." Howard Dean, M. D., June 23, 2003 http://www.deanforamerica.com/ From gu at monano.com Tue Nov 4 11:14:14 2003 From: gu at monano.com (gu) Date: Tue, 04 Nov 2003 11:14:14 -0800 Subject: Evelyn can not use her reservation for today References: <3F8EE6BC.3C654240@snf.stanford.edu> Message-ID: <3FA7FA86.3000202@monano.com> Due to personnel reason, Evelyn asked me to inform you that she can not use her reservation for today. Best wishes, Gang Gu Molecular Nanosystems 977 Commercial Street Palo Alto, CA 94303 Tel 650-8454032 From mtang at snf.stanford.edu Tue Nov 4 12:19:50 2003 From: mtang at snf.stanford.edu (Mary Tang) Date: Tue, 04 Nov 2003 12:19:50 -0800 Subject: SNF Job Posting Message-ID: <3FA809E6.9202FD7A@snf.stanford.edu> Greetings Labmembers: We'd like to bring something to your attention... We?ve just posted a job at SNF for the following position: ?Science and Engineering Associate: Etch Maintenance?. Yes, Len is finally escaping us and will be taking a well-deserved retirement up in the mountains. Which leaves us in the position of trying to find a successor (not a "replacement", since as we all know, Len is irreplaceable). We?d like to ask your help: if you know someone or know of someone who is qualified, skilled, and (very importantly) with whom you like to work with, please have him/her contact Dick Crane. The job description is posted at the Stanford HR website under the job code: #004219 and is linked through the SNF home page. Thanks for your attention, Mary -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From pindermuhle at zyomyx.com Wed Nov 5 15:04:09 2003 From: pindermuhle at zyomyx.com (Indermuhle, Pierre) Date: Wed, 5 Nov 2003 15:04:09 -0800 Subject: Vapor phase deposition of amino-propyl-silane Message-ID: <0CF4866CA7DC1143BE74B941398613E877228F@reno.zyomyx.com> Not sure if the first message went through, so I'm sending it again, just for the case.... > Hi there > > Does anyone know about anybody who could run some silylation for us? > > It would be a vapor phase deposition of amino-propyl-silane, preferably in a YES oven (we had very good results with them). > > It would be an outsourcing contract with $ome compen$ation, of cour$e. > > Thanks a lot! > > Pierre > > > > Pierre-F. Indermuhle > Senior Research Scientist > Zyomyx Inc. > Hayward, CA. 94544 > > (510) 266-7509 > From guerra at par.stanford.edu Fri Nov 7 09:13:14 2003 From: guerra at par.stanford.edu (Ann Guerra) Date: Fri, 7 Nov 2003 09:13:14 -0800 (PST) Subject: EE310 Integrated Circuits Seminar, 11/11/03 Message-ID: EE310 Integrated Circuits Technology and Design Seminar "MEMS Rotary Engine Power System" Al Pisano U.C. Berkeley Tuesday, November 11, 2003 4:15 p.m. Building 380, Room 380X ABSTRACT In this talk is a project overview and recent research results for the MEMS Rotary Engine Power System project at the Berkeley Sensor & Actuator Center of the University of California at Berkeley. The talk will begin with the research motivation for the project, which is the extraordinary high specific energy density of hydrocarbon fuels. When compared with the energy density of batteries, hydrocarbon fuels may have as much as 20x more energy. However, the technical challenge is the conversion of hydrocarbon fuel to electricity in an efficient and clean micro engine. In this project, the Wankel engine, as invented by Professor Wankel of Germany and made famous by the Japanese automobile manufacturer, Mazda, is used as the micro engine design. A 10 mm diameter Wankel engine will be shown that has already generated 4 Watts of power at 9300 rpm. The final portion of the talk will describe the 1 mm and 2.4 mm Wankel engines that BSAC is developing for power generation at the microscale, with a projected electrical power output of 90 milliwatts from the 2.4 mm engine. Prototype engine components have already been fabricated and these will be described. From alirezaa at stanford.edu Thu Nov 13 17:14:37 2003 From: alirezaa at stanford.edu (Alireza Khalili) Date: Thu, 13 Nov 2003 17:14:37 -0800 Subject: Missing cell phone In-Reply-To: <3FA2EDDD.8060209@snf.stanford.edu> Message-ID: <5.2.1.1.2.20031113170611.00b13ca8@alirezaa.pobox.stanford.edu> Hi everybody, I lost my cell-phone somewhere in the cleanroom this afternoon. I'd appreciate it if you could let me know, in case you've seen it. It's an old Panasonic phone from AT&T... Much Thanks, --Ali From litteken at stanford.edu Fri Nov 14 14:29:26 2003 From: litteken at stanford.edu (Christopher S. Litteken) Date: Fri, 14 Nov 2003 14:29:26 -0800 Subject: University Oral Examination - Christopher S. Litteken (Nov. 21, 3PM) Message-ID: University Oral Examination Christopher S. Litteken Department of Materials Science and Engineering The Effects of Multi-Dimensional Constraint on the Adhesion of Thin-Films and Patterned Structures November 21, 2003, 3:00 PM (Refreshments will be served at 2:45 PM) Cypress Auditorium, Paul Allen Center for Integrated Systems (CIS 101X) Stanford University Successful integration of new materials, such as advanced low-k dielectrics, into high-density interconnect structures within microelectronic devices requires an understanding of the mechanisms that control the adhesion of thin-film interfaces. The intent of the present study is to investigate the role of multi-dimensional elastic constraint on the mechanical and interfacial properties of lithographically patterned thin-film structures. Accordingly, structures comprised of metal and low-k films were fabricated to systematically vary in either one dimension (blanket film thickness) or two dimensions (patterned feature aspect ratio). Fracture mechanics techniques were employed to measure the critical interfacial adhesion (Gc) at the relevant blanket or patterned film interface. Results from blanket film structures indicate that the adhesive characteristics of an interface can be dominated by plastic energy dissipated within adjacent polymer or metal layers. Due to the constraint provided by the neighboring elastic layers or the relatively massive substrate, the extent of plastic deformation was observed to be dependent of the ductile film's thickness and residual stress. In patterned structures containing lithographically defined low-k polymer lines where the line width varied between 2 and 12 microns, a 50% increase in Gc was observed for the smallest feature width compared to a similar blanket polymer film interface. This behavior is rationalized in terms of the effect of stress state on the local fracture mode and resulting plastic deformation in the polymer line similar to the plane stress to plane strain transition observed in bulk materials. To investigate more technologically relevant patterned structures, arrays of alternating Cu and low-k lines were fabricated with feature widths varying between 0.2 and 3 microns. A pronounced increase in Gc was observed when the debond was propagated orthogonal, rather than parallel, to the length of the line. Morphological characterization of the fracture surface revealed features with a pitch and orientation identical to the original patterned structure resulting from variations in elastic properties adjacent to the debonded interface. Mechanics models detailing crack tip shielding and energy dissipation through the frictional contact of these surface asperities will be presented to explain the observed trends in adhesion. -------------- next part -------------- A non-text attachment was scrubbed... Name: Litteken Abstract.pdf Type: application/pdf Size: 50387 bytes Desc: not available URL: From rcrane at snf.stanford.edu Fri Nov 14 15:26:16 2003 From: rcrane at snf.stanford.edu (Dick Crane) Date: Fri, 14 Nov 2003 15:26:16 -0800 Subject: Need your help for tool status Message-ID: <3FB56498.2D18B88A@snf.stanford.edu> Labmembers: We'd like to take a moment to admonish/scream-at/beg-you to please, please, please use Coral to communicate the status of equipment in the lab. There have been several complaints recently of non-functioning equipment -- which were not shutdown (or even commented about) on Coral, so that no one, including maintenance, even knew there was a problem. In fact, someone just today reportedly had to rework their wafers because a problem on an alignment tool was recognized by the previous user but not reported on Coral. We staff members rely on Coral to track equipment performance and problems and manage resources accordingly. If problems are not reported on Coral, we don't really have a reliable, traceable record of equipment uptime/downtime. So, even if a problem is verbally communicated to the nearest staff person on-hand, please, please make sure that any issues are noted, as problems, comments, or shutdowns, as appropriate. Your training should cover most contingencies; if you are uncertain about shutting a tool down, by all means, please consult with a staff person. Recent upgrades in Coral allow for better use of the comment feature for non shutdown/problem conditions. The nature of the shutdown/problem/comment should be listed in the header. But please note that your responsibility doesn't end there -- staff members and labmembers alike rely on your feedback to find ways to continuously improve our lab. Thanks for your attention and assistance -- Dick Crane and Mary Tang From beckwith at cis.stanford.edu Fri Nov 14 16:07:43 2003 From: beckwith at cis.stanford.edu (Sharleen Beckwith) Date: Fri, 14 Nov 2003 16:07:43 -0800 Subject: Need your help for tool status In-Reply-To: <3FB56498.2D18B88A@snf.stanford.edu> References: <3FB56498.2D18B88A@snf.stanford.edu> Message-ID: I AGREE!!! Nothing like showing up for your reservation to find a piece of equipment that does not work, which was clearly broken during the last persons reservation and they just walked away. This is particularly irritating when there is a time limit on the machine and half of the reservation is taken up waiting for the equipment to be repaired. Sharleen At 3:26 PM -0800 11/14/03, Dick Crane wrote: >Labmembers: > >We'd like to take a moment to admonish/scream-at/beg-you to please, >please, please use Coral to communicate the status of equipment in the >lab. There have been several complaints recently of non-functioning >equipment -- which were not shutdown (or even commented about) on >Coral, so that no one, including maintenance, even knew there was a >problem. In fact, someone just today reportedly had to rework their >wafers because a problem on an alignment tool was recognized by the >previous user but not reported on Coral. From mbadi at relgyro.stanford.edu Sat Nov 15 14:50:06 2003 From: mbadi at relgyro.stanford.edu (Mohammed H. Badi) Date: Sat, 15 Nov 2003 14:50:06 -0800 (PST) Subject: Orals Abstract for Mohammed H. Badi Message-ID: Special University Oral Examination Using a MEMS Transducer To Excite Lamb Waves in Silicon Thursday, November 20, 2003 1:00 PM, CISX-Aud (Refreshments at 12:30 PM) Mohammed H. Badi E.L. Ginzton Laboratory Department of Electrical Engineering Advisor: Professor B.T. Khuri-Yakub Many sensors and acoustic wave filters rely on the conversion of electrical energy into the mechanical energy. These devices traditionally perform this function using a piezoelectric transducer in an interdigital configuration that launches acoustic waves in the substrate upon which the device is built. While almost all of these acoustic wave devices operate efficiently in a gaseous or vacuum ambient, only those that generate primarily shear motion in their substrate remain efficient in a liquid environment due to excessive damping. The exception to this rule occurs for devices that propagate waves with a velocity lower than that of sound in the liquid. Asymmetric Lamb waves, also known as flexural plate waves, fit this criterion and are therefore often used in both sensor and filter applications. This presentation describes the fabrication, modeling and experimental results of a novel device for the transduction of Lamb waves using the Capacitive Micromachined Ultrasonic Transducer (CMUT). The CMUT is similar to other capacitance transducers in that it employs a vibrating membrane to send and receive ultrasound in air and in water. Its invention was reported in 1994, and it has since found applications in a variety of arenas. The presence of Lamb waves in devices built for the purpose of transmitting an acoustic signal into the surrounding medium has a deleterious effect on the system behavior. This is because the wave that is excited creates a cross-coupling of energy between otherwise independent cells. If this excitation of Lamb waves is instead exploited and optimized, however, the foundation for a new device is created. The Lamb wave device described in this presentation uses high aspect ratio CMUTs built using two different fabrication techniques. The first results in a capacitive transducer built using the standard sacrificial-layer CMUT manufacturing process, while the second employs the significantly more robust and less labor-intensive wafer bonding method. Both arrays and single element structures have been built on substrates that have a thickness ranging from 500 microns down to 8 microns. They have been characterized using S-parameter, pitch-catch, and laser doppler vibrometer techniques, and the resulting behavior is consistent with simulations performed using both analytical and finite element models. Measurements further demonstrate an insertion loss of 16.4 dB at 2.6 MHz for an electrically matched device built using a single 60 um x 1 cm CMUT at both the transmit and receive ports. From guerra at par.stanford.edu Fri Nov 14 15:17:01 2003 From: guerra at par.stanford.edu (Ann Guerra) Date: Fri, 14 Nov 2003 15:17:01 -0800 (PST) Subject: TI DSPS Special "Wireless" Seminar Thur 11/20 Message-ID: SPECIAL SEMINAR TEXAS INSTRUMENTS Digital Signal Processing Systems Thursday, November 20, 2003 10:30 a.m. CIS-101 Seminar to be followed by informal discussion with students. ROBERT HEWES Vice President and Director, DSPS R&D Center, Texas Instruments Title: "A Brief Introduction to the DSPS R&D Center of Texas Instruments" A very brief introduction to TI and the DSPS R&D Center will be given, followed by a technical presentation by Don Shaver. DON SHAVER Director Communication Systems Laboratory, DSPS R&D Center, Texas Instruments Title: "The Wireless Last Mile - When There's a Will There's a Way" Abstract: This talk provides an overview of key technical issues associated with deploying an affordable, robust, and appealing wireless last mile capability from a System-on-a-Chip (SoC) perspective. Systems issues including data rates, quality-of-service (QoS), spectrum allocation, system flexibility, standardization, interoperability, differentiation from wired solutions, compatibility with legacy systems, and other factors must be addressed while making systems level trade-offs leading to a solution with wide applicability. From a technical perspective, there exist a diverse combination of adaptive antenna array schemes, modulation, coding, and protocols meeting the technical and cost requirements of such a system. However, the motivation to converge to a "single" technical standard largely depends on the existence of a volume market enabling all stakeholders to profit quickly. From a semiconductor perspective, for Moore's law to be enforced, again there must be a phenomenally huge market for all this to make sense in a sub-micron wafer fabrication facility. Bio: Don Shaver joined Texas Instruments Inc. in 1977. For the past 16 years, Don has managed leading edge technology development initiatives in TI R&D organizations including TI's Computer Science Center, TI's Tsukuba R&D Center, and TI's DSP Solutions R&D Center. Don is currently Director of the Communications Systems Laboratory within TI's DSP Solutions R&D Center. This laboratory develops systems-on-a-chip technology (ranging from algorithms to implementations) for cellular wireless, wireless networking, broadband wireless access, and wireline communications applications. The communications lab did early work in cable modem and ADSL modem technology prior to TI establishing a well-focused Broadband Communications initiative. This laboratory has technically contributed to a variety of communications standards including 3GPP/3GPP2/TSG GERAN, ANSI T1E1.4/ITU-T G.992.x/ADSL, ITU-T G.989.x/HomePNA, IEEE 802.15.3/802.15.3a/UWB, and IEEE 802.11. From 1991 to 1995, Don resided in Japan where he established and was Director of the Digital Audio and Video Systems Laboratory in TI's Tsukuba R&D Center. Dr. Shaver is Chair of the IEEE Computer Society Dallas Chapter and has been an active IEEE member for 34 years. From Scalf_Jennifer at gsb.stanford.edu Mon Nov 17 23:52:59 2003 From: Scalf_Jennifer at gsb.stanford.edu (Scalf, Jennifer Ann) Date: Mon, 17 Nov 2003 23:52:59 -0800 Subject: Business plan developlment opportunity. Message-ID: <89566FCC7F29404E8714ACF1F9FEED4DB14BC3@gsb-gerah> Hi Labmembers, I am a second year MBA student at Stanford. I am looking for on or two students in the engineering school to form a team to work on a microdevices (MEMS/nanotech) business plan with me. More specifically, I'm looking for people who think that their research has commercial viability and would like to further explore/flesh out the market research and business model for the idea. I would like to do this within the context of one of the courses offered through the Stanford Graduate School of Business. This course, "S356: Evaluating Entrepreneurial Opportunities," is basically a course where you write a business plan for a new idea. More detailed information can be found at http://www.gsb.stanford.edu/ces/teaching/356_objectives.html . The final team needs to be 4-5 students total -- I'm still looking for the right 2-3 business school students to round out the team. Teams can enroll in the course only through a special application process. A one-page team/idea description is due on December 1, 2003. The course will take place in the Winter and Spring quarters. For an idea of my background, I was involved in MEMS prior to business school -- I worked at JPL (Microdevices Laboratory) and at two MEMS-based start-ups. I also previously have been a user at SNF. Any interested parties should send me an e-mail ASAP since the deadline for application to this class is fast approaching. My email address is scalf_jennifer at gsb.stanford.edu. Thanks very much, Jennifer -------------- next part -------------- An HTML attachment was scrubbed... URL: From auber at stanford.edu Tue Nov 18 15:28:14 2003 From: auber at stanford.edu (Dan Aubertine) Date: Tue, 18 Nov 2003 15:28:14 -0800 Subject: University Oral Examination - Daniel B. Aubertine (Nov. 25, 10AM) Message-ID: <5.2.1.1.2.20031118144445.00b30ef0@auber.pobox.stanford.edu> University Oral Examination Daniel B. Aubertine Department of Materials Science and Engineering Tuesday, November 25, 2003 10:00AM (Refreshments will be served at 9:45AM) 335 McCullough Building Stanford University An x-ray diffraction study of concentration and strain dependent Si/SiGe interdiffusion SiGe alloys have become important materials for semiconductor device engineering. They provide a means of tailoring the properties of the semiconductor, such as band-gap, carrier mobility, and dopant solubility, at specific locations within a device. CVD growth rates for single crystal SiGe are also much faster than for Si, allowing improved throughput and decreased contamination. Further, all of these benefits are realized at a relatively low cost owing to the high degree of compatibility between SiGe and Si processing technologies. As SiGe films are introduced into deeply scaled, ultra-fast MOS devices, it is increasingly clear that interdiffusion at Si/SiGe interfaces is a significant problem. Strained Si MOSFETs typically utilize a thin, epitaxial, strained Si channel grown onto a relaxed SiGe layer. For these structures, out-diffusion of Ge from the SiGe layer into the Si channel is a factor limiting the practical thermal exposure during processing. Predicting the degree of intermixing is difficult because the interdiffusion process is influenced by the local Ge concentration, film strain, and non-equilibrium point defect concentrations. Development of a robust model for Si/SiGe interdiffusion requires that each of these effects be isolated and quantified. Toward this end, I have employed x-ray diffraction from concentration modulated SiGe films as a probe of both interdiffusion and strain relaxation. Although less commonly applied to semiconductor diffusion than techniques that map out concentration profiles directly, this technique has a long history as an ultra-high-sensitivity probe of both interdiffusion and film strain. By growing and analyzing a series of films with varied mean Ge concentrations, spatial modulation periods, and degrees of strain relaxation, I have built up a model for concentration and strain-dependent Si/SiGe interdiffusion. The model results have been successfully tested against x-ray measurements of interdiffusion in large-amplitude Si/SiGe superlattices and SIMS measurements of intermixing at Si/SiGe interfaces. Further, this model is readily applicable to predicting the thermal stability of technologically important Si/SiGe interfaces during device processing. ===== Daniel B. Aubertine PhD Candidate Department of Materials Science & Engineering Stanford University Room 203, McCullough Bldg. 476 Lomita Mall Stanford, CA 94305-4045 URL: www.stanford.edu/~auber Ph: 650-724-5371 (office) Fax: 650-736-1984 -------------- next part -------------- A non-text attachment was scrubbed... Name: Abstract-Aubertine.pdf Type: application/pdf Size: 11165 bytes Desc: not available URL: From sybae at stanford.edu Wed Nov 19 11:29:24 2003 From: sybae at stanford.edu (Seung-Young Bae) Date: Wed, 19 Nov 2003 11:29:24 -0800 Subject: Chemical Etchant for ZnO Message-ID: <004e01c3aed3$70add9c0$996b40ab@LUPIN> Dear, Anyone knows chemical etchant for ZnO? We want to use it to polish ZnO for optical transmission measurement. Seung-Young -------------- next part -------------- An HTML attachment was scrubbed... URL: From curlwang at stanford.edu Wed Nov 19 18:32:09 2003 From: curlwang at stanford.edu (Ke Wang) Date: Wed, 19 Nov 2003 18:32:09 -0800 (PST) Subject: low frequency LCR meter Message-ID: Hi, colleagues, I'm looking for sth that can do impedance measurement (on order of kilo-ohms) at low frequency (below 10kHz). Probably a LCR meter like HP4274A (the ones in the measurement room are all 4275A, for high f :( ) will be good. If you happen to know one around, could you please let me know? Thanks a lot! Ke _____________________________________________ Ke Wang PHD Candidate Department of Applied Physics, Stanford University CISX B113-14 Stanford, CA 94305-4070 Phone: (650)723-8040 From litteken at stanford.edu Thu Nov 20 10:03:50 2003 From: litteken at stanford.edu (Christopher S. Litteken) Date: Thu, 20 Nov 2003 10:03:50 -0800 Subject: REMINDER University Oral Examination - Christopher S. Litteken (Nov. 21, 3PM) Message-ID: University Oral Examination Christopher S. Litteken Department of Materials Science and Engineering The Effects of Multi-Dimensional Constraint on the Adhesion of Thin-Films and Patterned Structures November 21, 2003, 3:00 PM (Refreshments will be served at 2:45 PM) Cypress Auditorium, Paul Allen Center for Integrated Systems (CIS 101X) Stanford University Successful integration of new materials, such as advanced low-k dielectrics, into high-density interconnect structures within microelectronic devices requires an understanding of the mechanisms that control the adhesion of thin-film interfaces. The intent of the present study is to investigate the role of multi-dimensional elastic constraint on the mechanical and interfacial properties of lithographically patterned thin-film structures. Accordingly, structures comprised of metal and low-k films were fabricated to systematically vary in either one dimension (blanket film thickness) or two dimensions (patterned feature aspect ratio). Fracture mechanics techniques were employed to measure the critical interfacial adhesion (Gc) at the relevant blanket or patterned film interface. Results from blanket film structures indicate that the adhesive characteristics of an interface can be dominated by plastic energy dissipated within adjacent polymer or metal layers. Due to the constraint provided by the neighboring elastic layers or the relatively massive substrate, the extent of plastic deformation was observed to be dependent of the ductile film's thickness and residual stress. In patterned structures containing lithographically defined low-k polymer lines where the line width varied between 2 and 12 microns, a 50% increase in Gc was observed for the smallest feature width compared to a similar blanket polymer film interface. This behavior is rationalized in terms of the effect of stress state on the local fracture mode and resulting plastic deformation in the polymer line similar to the plane stress to plane strain transition observed in bulk materials. To investigate more technologically relevant patterned structures, arrays of alternating Cu and low-k lines were fabricated with feature widths varying between 0.2 and 3 microns. A pronounced increase in Gc was observed when the debond was propagated orthogonal, rather than parallel, to the length of the line. Morphological characterization of the fracture surface revealed features with a pitch and orientation identical to the original patterned structure resulting from variations in elastic properties adjacent to the debonded interface. Mechanics models detailing crack tip shielding and energy dissipation through the frictional contact of these surface asperities will be presented to explain the observed trends in adhesion. -------------- next part -------------- A non-text attachment was scrubbed... Name: Litteken Abstract.pdf Type: application/pdf Size: 50387 bytes Desc: not available URL: From alirezaa at stanford.edu Thu Nov 20 15:07:05 2003 From: alirezaa at stanford.edu (Alireza Khalili) Date: Thu, 20 Nov 2003 15:07:05 -0800 Subject: Conductive Epoxy In-Reply-To: <89566FCC7F29404E8714ACF1F9FEED4DB14BC3@gsb-gerah> Message-ID: <5.2.1.1.2.20031120145654.052fee78@alirezaa.pobox.stanford.edu> Hi everybody, I was wondering if anybody has had experience with conductive pastes/epoxies before. I'm looking for something that is conductive, fastens in a short time (no high temp(>70C) cure), and is easily removable by a solvent or something. Any help is appreciated... Thanks, --Ali From alirezaa at stanford.edu Sat Nov 22 12:39:00 2003 From: alirezaa at stanford.edu (Alireza Khalili) Date: Sat, 22 Nov 2003 12:39:00 -0800 Subject: Conductive Epoxy Message-ID: <5.2.1.1.2.20031122121539.024cccf0@alirezaa.pobox.stanford.edu> Hi, Thank everybody for sharing his/her experience... I'd like to especially thank Dr. A Nojeh for his comprehensive reply. from your emails I've compiled a list of online vendors that provide a variety of epoxies: www.Chemtronics.com www.epotek.com www.tedpella.com I've also learned that silver-pastes mostly dissolve in acetone... much thanks, --Ali -------------- next part -------------- An HTML attachment was scrubbed... URL: From mike.daneman at arrayedfiberoptics.com Mon Nov 24 09:52:49 2003 From: mike.daneman at arrayedfiberoptics.com (Mike Daneman) Date: Mon, 24 Nov 2003 09:52:49 -0800 Subject: Lost card key Message-ID: Hello, I lost my company card key (not the CIS card key) at CIS on Friday. It's a plastic card that says "RightOrder" on it. If anyone found it please let me know. Thanks a lot, -Mike. Mike Daneman Arrayed Fiberoptics, Inc. Email: mike.daneman at arrayedfiberoptics.com Ph: (650) 740-5719 Fax: (408) 228-8772 From auber at stanford.edu Mon Nov 24 16:07:29 2003 From: auber at stanford.edu (Dan Aubertine) Date: Mon, 24 Nov 2003 16:07:29 -0800 Subject: Reminder: University Oral Examination - Daniel B. Aubertine (Nov. 25, 10AM) Message-ID: <5.2.1.1.2.20031124160254.02f3ee10@auber.pobox.stanford.edu> University Oral Examination Daniel B. Aubertine Department of Materials Science and Engineering Tuesday, November 25, 2003 10:00AM (Refreshments will be served at 9:45AM) 335 McCullough Building Stanford University An x-ray diffraction study of concentration and strain dependent Si/SiGe interdiffusion SiGe alloys have become important materials for semiconductor device engineering. They provide a means of tailoring the properties of the semiconductor, such as band-gap, carrier mobility, and dopant solubility, at specific locations within a device. CVD growth rates for single crystal SiGe are also much faster than for Si, allowing improved throughput and decreased contamination. Further, all of these benefits are realized at a relatively low cost owing to the high degree of compatibility between SiGe and Si processing technologies. As SiGe films are introduced into deeply scaled, ultra-fast MOS devices, it is increasingly clear that interdiffusion at Si/SiGe interfaces is a significant problem. Strained Si MOSFETs typically utilize a thin, epitaxial, strained Si channel grown onto a relaxed SiGe layer. For these structures, out-diffusion of Ge from the SiGe layer into the Si channel is a factor limiting the practical thermal exposure during processing. Predicting the degree of intermixing is difficult because the interdiffusion process is influenced by the local Ge concentration, film strain, and non-equilibrium point defect concentrations. Development of a robust model for Si/SiGe interdiffusion requires that each of these effects be isolated and quantified. Toward this end, I have employed x-ray diffraction from concentration modulated SiGe films as a probe of both interdiffusion and strain relaxation. Although less commonly applied to semiconductor diffusion than techniques that map out concentration profiles directly, this technique has a long history as an ultra-high-sensitivity probe of both interdiffusion and film strain. By growing and analyzing a series of films with varied mean Ge concentrations, spatial modulation periods, and degrees of strain relaxation, I have built up a model for concentration and strain-dependent Si/SiGe interdiffusion. The model results have been successfully tested against x-ray measurements of interdiffusion in large-amplitude Si/SiGe superlattices and SIMS measurements of intermixing at Si/SiGe interfaces. Further, this model is readily applicable to predicting the thermal stability of technologically important Si/SiGe interfaces during device processing. ===== Daniel B. Aubertine PhD Candidate Department of Materials Science & Engineering Stanford University Room 203, McCullough Bldg. 476 Lomita Mall Stanford, CA 94305-4045 URL: www.stanford.edu/~auber Ph: 650-724-5371 (office) Fax: 650-736-1984