From rosanna at snf.stanford.edu Thu Apr 1 10:50:16 2004 From: rosanna at snf.stanford.edu (Rosanna Dohm) Date: Thu, 1 Apr 2004 10:50:16 -0800 Subject: SPECIAL SEMINAR TODAY, 4/1/04 Message-ID: SPECIAL SEMINAR Thursday, 4/1/04 3:00 p.m. CIS-101 "Nanoscale Nonvolatile Memory Technology and its Application to Molecular Interface" Edwin Chihchuan Kan School of Electrical and Computer Engineering Cornell University ABSTRACT Nonvolatile memory based on confined charges has seen the largest market growth in the last decade. However, the cost, storage density and high-voltage operations has posed severe limitation to its pervasive and ubiquitous applications. The key to high density, low voltage, fast writing and ultra-high endurance lies in the use of direct tunneling oxide while still keeping the retention time up to 3-10 years. From the physical principles, the metal nanocrystal memory is superior to the other discrete storage options such as SONOS and Si/Ge nanocrystal memories. This talk will present the experimental characterization of the operations and reliability of metal nanocrystal memories. Static charge in the nonvolatile memory can also be perceived as a convenient and low-power interface to the world outside of CMOS electronics. We will demonstrate the operating principles for modified surface electrochemistry from static charge injection for molecular sensing and actuation, and establish arguments why this is an effective approach over the conventional electrode and cantilever-based methods. We will also discuss what is the necessary technology development to bring forth a programmable biochemical end that can eventually serve as a universal detector and actuator in the microbiological level. BIOGRAPHY Edwin Chihchuan Kan received his B.S. degree from National Taiwan University, Taipei,Taiwan, R.O.C., in 1984, and the M.S. and Ph.D. degrees from the University of Illinois,Urbana-Champaign, in 1988 and 1992, respectively, all in electrical engineering. From 1984 to 1986, he served as a Second Lieutenant in the Air Force, Taiwan, R.O.C. In 1992,he joined Dawn Technologies as a Principal CAD Engineer developing advanced electronic and optical device simulators and technology CAD framework. He was then with Stanford University, as a Research Associate from 1994 to 1997 under the supervision of Prof. R. W. Dutton. From 1997 to 2002, he was an Assistant Professor with the School of Electrical and Computer Engineering, Cornell University, Ithaca, NY, where he is now an Associate Professor. He spent the summers of 2000 and 2001 at IBM Microelectronics, Yorktown Heights and Fishkill, NY, in the IBM Faculty Partner Program. His main research areas include CMOS technology, semiconductor device physics, integrated autonomous systems, and technology CAD. Dr. Kan received the Presidential Early Career Award for Scientists and Engineer (PECASE) in October 2000 from the White House of the US Federal Government. He also received several teaching awards from Cornell Engineering College for his CMOS and MEMS courses. He plans to spend his coming sabbatical year in Intel and Stanford between July 2004 and July 2005. From CBonner at optobionics.com Fri Apr 2 09:26:56 2004 From: CBonner at optobionics.com (Bonner, Christopher M.) Date: Fri, 2 Apr 2004 09:26:56 -0800 Subject: chemical and mechanical polishing Message-ID: Any suggestions out there for CMP vendors? Chris Bonner -------------- next part -------------- An HTML attachment was scrubbed... URL: From rcrane at snf.stanford.edu Wed Apr 7 15:01:59 2004 From: rcrane at snf.stanford.edu (Dick Crane) Date: Wed, 07 Apr 2004 15:01:59 -0700 Subject: diff and litho shutdown Message-ID: <40747A57.39A34901@snf.stanford.edu> Labmembers, There will be a major shutdown of the diffusion and litho areas on Saturday, April 17, from 0600 through 1800, for facilities and outside contractors to replace or repair vent fans and shutters. Diffusion and associated area: All toxic and flammable (except H2) gases will be turned off during a repair to the toxic gas bunker fan in CISX115. This action affects the following tools: Tylanbpsg, Tylannitride, Tylanpoly, Tylansige, Tystar1, ASM epi reactor, STS dep, and AG4108. This repair was attempted during the holiday shutdown, but an incorrectly sized custom part delayed the work. Litho: The solvent vent fan for litho is being repaired. All solvent vented tools must be shutdown. This action affects: Headway2, Laurel, svgcoat, svgcoat2, svgdev, svgdev2, bluem, litho solvent bench, and yes. This repair addresses a recently discovered, pending failure. I have reserved the affected tools in my name. I will send out and post an announcement when the work is complete and these areas are ready for use. Sorry for the inconvenience, Dick -------------- next part -------------- An HTML attachment was scrubbed... URL: From rcrane at snf.stanford.edu Wed Apr 7 16:21:45 2004 From: rcrane at snf.stanford.edu (Dick Crane) Date: Wed, 07 Apr 2004 16:21:45 -0700 Subject: Odor in litho Message-ID: <40748D09.E59639D7@snf.stanford.edu> Odor in the litho area. In the past week several people have noticed a strange odor in the litho area. We have located the source of the odor and the Stanford Environmental Health and Safety Department has determined that it is safe although some people may develop a sensitivity to low level exposures. The humidity control system in litho injects steam into the air when an increase in humidity is needed. Normally the humidifier steam consists of 95% cogen steam and 5% boiler steam. On March 22, the cogen plant shutdown for major work and the humidifier steam changed to 100% boiler steam. The water additives are different in the boiler system which caused a different odor. The two additives, Optisperse and Cortrol IS3000, are FDA approve for use in steam which in contact with food products. According to the MSDS Optisperse does not contain any components considered hazardous as defined by OSHA regulations. The product Cortrol contains sodium bisulfite, an antioxidant that is also used to prevent or reduce discoloration of fruits and vegetables, prevent black spots on shrimp and lobster, and inhibit the growth of microorganisms in fermented foods such as wine. This chemical is an irritant to the eyes and mucous membranes and some people can develop a sensitivity to low levels of exposure. If you experience any irritation or discomfort you may wish to leave the litho area. Historically steam injection occurs in the afternoon of warm days (low outside humidity). If you have any questions feel free to contact either Russell Furr or Ling Sue Teng, Manager Occupational Health & Safety at 650-723-0448. The good news: The steam plant should be back up sometime this Saturday evening, three days from now. Even better news: After 20 years of steam injection, a new, DI water based system is being installed. The new DI water source humidifier should be on-line late May. This change should eliminate the odor issue. I trust this explain the odor and actions taken. Dick From vigneshg at stanford.edu Fri Apr 9 00:56:29 2004 From: vigneshg at stanford.edu (Vignesh G) Date: Fri, 09 Apr 2004 00:56:29 -0700 Subject: depositing a-Si Message-ID: <5.1.1.5.2.20040409005330.023faa20@vigneshg.pobox.stanford.edu> Hi all, I was told (by Mary Tang) that there was a company around about here somewhere which could deposit a-Si on substrates. Mary is away for the next few days and I seem to have forgotten the name of that company. I was wondering if any of you would know of such a company. Thanks. - Vignesh. -=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=- Vignesh G. Shankar PhD Candidate in Materials Science and Engineering Stanford University -=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=- From fumin at stanford.edu Fri Apr 9 14:32:05 2004 From: fumin at stanford.edu (Fu-Min Wang) Date: Fri, 9 Apr 2004 14:32:05 -0700 Subject: etching depth of 500um Message-ID: <00b101c41e7a$1aa87eb0$1aa540ab@mozart> Dear labmembers, I am looking for the feasibility of etching a 500 um wide channel down to 500 um deep and I will look for some thicker wafer about 600-700 um. Two issues here: (1) how do you accurately control the etch depth of 500 um ? (2) How do you precisely measure the depth of 500 um range? Your suggestions are highly appreciated. Fumin -------------- next part -------------- An HTML attachment was scrubbed... URL: From kenney at slac.stanford.edu Fri Apr 9 15:02:05 2004 From: kenney at slac.stanford.edu (Chris Kenney) Date: Fri, 9 Apr 2004 15:02:05 -0700 (PDT) Subject: etching depth of 500um In-Reply-To: <00b101c41e7a$1aa87eb0$1aa540ab@mozart> References: <00b101c41e7a$1aa87eb0$1aa540ab@mozart> Message-ID: You can use the focus knob on a microscope to measure the depth with a few microns accuracy. Use as high a magnification as you can for smaller errors. It's nice to calibrate the focus know with an object of know height. With channels this wide and with a low aspect ration you should be able to focus on the channel bottoms. Chris On Fri, 9 Apr 2004, Fu-Min Wang wrote: > Dear labmembers, > > I am looking for the feasibility of etching a 500 um wide channel down to 500 um deep and I will look for some thicker wafer about 600-700 um. Two issues here: (1) how do you accurately control the etch depth of 500 um ? (2) How do you precisely measure the depth of 500 um range? Your suggestions are highly appreciated. > > Fumin > From bwacker at sbcglobal.net Sat Apr 10 07:37:54 2004 From: bwacker at sbcglobal.net (bwacker) Date: Sat, 10 Apr 2004 07:37:54 -0700 Subject: depositing a-Si References: <5.1.1.5.2.20040409005330.023faa20@vigneshg.pobox.stanford.edu> Message-ID: <001801c41f09$698c8500$94c4fea9@barbara> Hi, Amorphous silicon can be deposited in two ways, through LPCVD or PECVD. Usually PECVD a-Si is more hydrogen rich. Hydrogen function is to passivate silicon dangling bonds. It all matters when you use a-Si for devices and can impact the transistor mobility for example. If you use LPCVD then at certain combination of power and pressure (if higher pressure then lower temperature) you will deposit a-Si. For example here at SNF you can use Tystar tube to deposit a-Si at for 400mT and 560C or 570C. Also, LPCVD gives you the advantage of using multiple substrates. Usually PECVD is a single chamber deposition and also it's main purpose is to deposit on a large substrate. I assumed that you want to deposit a-Si on Si or quartz substrate. If you want to use a glass substrate then you certainly need to look outside. I know that Xerox Palo Alto Research Center has a facility to do that since they were once a world-wide leading group in the research on a-Si:H but I do not know if they still do that for the outside customers. You can always ask. Barbara ----- Original Message ----- From: "Vignesh G" To: Sent: Friday, April 09, 2004 12:56 AM Subject: depositing a-Si > Hi all, > > I was told (by Mary Tang) that there was a company around about here > somewhere which could deposit a-Si on substrates. Mary is away for the next > few days and I seem to have forgotten the name of that company. I was > wondering if any of you would know of such a company. Thanks. > > - Vignesh. > > > > -=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=- > Vignesh G. Shankar > > PhD Candidate in Materials Science and Engineering > Stanford University > > -=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=-=- From mahnaz at snf.stanford.edu Tue Apr 13 16:51:46 2004 From: mahnaz at snf.stanford.edu (Mahnaz Mansourpour) Date: Tue, 13 Apr 2004 16:51:46 -0700 Subject: New Microscope Message-ID: <407C7D12.68D6EE0F@snf.stanford.edu> Hello all, We just put a new Nikon Microscope in the lab ( Thanks to Jim Mcvittie), is sitting on the table next to EV aligner. Many features like focusing and changing objectives are automatic. You can easily damage the system or your sample so please see Mike/ Mario / Uli or I for training . Training takes less than 5 minutes. mahnaz From mtang at snf.stanford.edu Wed Apr 14 07:08:07 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Wed, 14 Apr 2004 07:08:07 -0700 Subject: [Fwd: Special deals for SNF members to attend the Nanotechnology symposium] Message-ID: <407D45C7.25DD8E87@snf.stanford.edu> -------- Original Message -------- Subject: Special deals for SNF members to attend the Nanotechnology symposium Date: Sun, 11 Apr 2004 18:27:41 -0700 From: "Eaden Saw" Reply-To: To: "'Mary Tang'" CC: "TomC" ,"Bertita Graebner" ,"Jessy Hsu" ,"T.Y. Lin" , Mary, Please help me broadcast this announcement to the SNF labmembers. Thanks a lot!! Eaden ------------------------------------------------------------------------------ As an appreciation to Prof. Nishi?s as our honored speaker, NATEA and IEEE would like to offer a special registration rate for SNF members who will participate in the nanotechnology symposium. 1. All SNF members will receive members? discount for registration in this symposium. Please check ?IEEE or SNF member? box and enter ?SNF? as the ID when doing on-line registration at http://www.natea.org/sv/events/2004/NFIT/nfit_2004.php 2. A specialfree admission (without lunch) is offered for all SNFstudents.Please register through me by e-mail me for signing up the symposium with this offer. Attached please find a copy of the flyer for your information. ---------------------------------------------------------------------------------------------------- Semiconductors to Nanotechnology - The Coming Convergence 6th IEEE/NATEA Annual Conference 2004 New Frontier in Computing Technology 4/17/2004, Braun Auditorium, Stanford University I.E.E.E. (the Institute of Electronic and Electrical Engineers) and N.A.T.E.A. (North American Taiwanese Engineers Association) share a common interest in providing their members significant technical information in a timely fashion. Members of both organizations often feel the lack of solid technical background on emerging technologies and do not possess time or funding to attend expensive commercial or academic courses. As a solution to this problem local chapters of both N.A.T.E.A and the I.E.E.E. Computer Society have joined resources over the last six years to provide an annual one day conference on an emerging technology. By gathering a panel of noted experts in a given technical area and having them cover the salient technical issues on a given topic this inexpensive one day conference provides individual members with enough information to make informed decisions regarding a given technology. This is the conference?s sole aim ? to provide members with the kind of technical background that allows them to cope with an increasing mass of new information in an organized and effective way. This year we plan to cover the march towards nanotechnology from traditional semiconductor technology. What is happening in this transformation and how fast it is happening are critical questions. The answer or the beginning of an answer to these questions will be addressed by a panel of noted experts from academic and quasi public research facilities as well as private companies. In this conference we hope to provide an overview covering key areas of this ongoing transformation ? Design, Shrinking Semiconductors, the crossover point to nanocircuitry, existing commercial ventures will provide unique and important perspective on this issue. For registration, please go to http://www.natea.org/sv/events/2004/NFIT/nfit_2004.php Program Overviews Time Topics Speaker 8:00 Registration 9:00 Opening Remark 9:15 Nanotechnology: Opportunities and Dr.MeyyaMeyyappan Challenges Director, Nanotech Program, NASAAmesResearchCenter 10:00 Nanosystems Design Dr. K. Eric Drexler Chairman, Foresight Institute Author, ?Nanosystems? 1992 10:45 Break 11:00 Chemistry and Physics of Prof. Peidong Yang Semiconductor Nanowires University of California, Berkeley 11:45 Lunch Break 13:00 Non-Volatile Memory Technology ? Dr. Stefan Lai Moving into the Nanotechnology Age Vice President, Technology and Manufacturing Group Intel Corp 13:45 Integrating Semiconductor Prof. L. C. Chen Technology with Carbon Nanotubes and Related Nanostructures Research Fellow and professor, National Taiwan University, Taiwan 14:30 Break 14:45 IC Technology, Past, Present, and Prof. Yoshio Nishi Future, and the Needs from Microelectronics to Director, Stanford Nano Nanoelectronics Fabrication Facility, Stanford University Eaden Saw -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: ieee_natea_Flyer_snf.doc Type: application/msword Size: 61952 bytes Desc: not available URL: From rcrane at snf.stanford.edu Thu Apr 15 12:06:07 2004 From: rcrane at snf.stanford.edu (Dick Crane) Date: Thu, 15 Apr 2004 12:06:07 -0700 Subject: diff and litho areas shutdown Message-ID: <407EDD1F.250AFFC@snf.stanford.edu> Labmembers, a kind reminder, There will be a major shutdown of the diffusion and litho areas on Saturday, April 17, from 0600 through 1800, for facilities and outside contractors to replace or repair vent fans and shutters. Diffusion and associated area: All toxic and flammable (except H2) gases will be turned off during a repair to the toxic gas bunker fan in CISX115. This action affects the following tools: Tylanbpsg, Tylannitride, Tylanpoly, Tylansige, Tystar1, ASM epi reactor, STS dep, and AG4108. This repair was attempted during the holiday shutdown, but an incorrectly sized custom part delayed the work. Litho: The solvent vent fan for litho is being repaired. All solvent vented tools must be shutdown. This action affects: Headway2, Laurel, svgcoat, svgcoat2, svgdev, svgdev2, bluem, litho solvent bench, and yes. This repair addresses a recently discovered, pending failure. I have reserved the affected tools in my name. I will send out and post an announcement when the work is complete and these areas are ready for use. Sorry for the inconvenience, Dick -------------- next part -------------- An HTML attachment was scrubbed... URL: From nayoung at stanford.edu Thu Apr 15 15:44:44 2004 From: nayoung at stanford.edu (Na Young Kim) Date: Thu, 15 Apr 2004 15:44:44 -0700 Subject: Nb film etching recipe In-Reply-To: <407C7D12.68D6EE0F@snf.stanford.edu> References: <407C7D12.68D6EE0F@snf.stanford.edu> Message-ID: <1082069084.407f105c59b26@webmail.stanford.edu> Dear all, Does anyone know about the etching of Niobium (Nb) film whose thinkness would be around 300nm? If so, do you mind sharing the recipe? Someone mentions dry etching, but no specific or optimum recipe for Nb is available to my knowledge. If any of you knows the useful website or reference, please let me know. Thank you, Na Young From cmfaulkn at snf.stanford.edu Fri Apr 16 11:41:30 2004 From: cmfaulkn at snf.stanford.edu (Carl Faulkner) Date: Fri, 16 Apr 2004 11:41:30 -0700 (PDT) Subject: thermal evaporation of Ti Message-ID: Does anyone know of a thermal evaporator that can be used to deposit Ti? We are concerned that we are damaging our thin gate oxides in the Innotec. Thanks for any information, Carl Faulkner From mtang at snf.stanford.edu Mon Apr 19 09:15:42 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Mon, 19 Apr 2004 09:15:42 -0700 Subject: Reminder: Open House Message-ID: <4083FB2E.45FDF94C@snf.stanford.edu> Hello all -- Just a reminder that the first SNF/SNL Open House will be held Tuesday and Wednesday this week. For the updated schedule of activities, please check out the SNF website (http://snf.stanford.edu). This is chance to: learn about some of the cool tools in the Nanocharacterization lab; find out what some of your fellow labmembers are up to; and talk with technical reps from equipment and service providers that SNF or SNF labmembers patronize. We hope that you can join in on the fun! Mary ******************************************************* The SNF Open House is supported by the generosity of the following sponsors: A.M. Fitzgerald & Assoc., Alta Microtec, American Precision Dicing, California Safety & Cleanroom, EV Group, Gallade Chemical, PhotoSciences, Rohm & Haas Microchemicals (Shipley), Silicon Microstructures, Inc, Suss Microtec, Technical Instrument Co., Tousimis, Wafernet, Inc., and Zygo, Inc. -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at snf.stanford.edu Mon Apr 19 10:42:24 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Mon, 19 Apr 2004 10:42:24 -0700 Subject: Found: "Arctic Zone" carrier Message-ID: <40840F7F.7B3D1433@snf.stanford.edu> Hi all -- Someone has turned in a small, black "Artic Zone" bag, found in the CAD room on Friday. I've got it Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From edwardsj at stanford.edu Tue Apr 20 14:33:05 2004 From: edwardsj at stanford.edu (Jane Edwards) Date: Tue, 20 Apr 2004 14:33:05 -0700 Subject: Reminder: Wafer Bonding & Lithography Presentations Message-ID: <000001c4271f$1144af80$236540ab@AVANDEL> FYI: Here is the agenda for this afternoon's Vendor Presentations (2-4:30). Please feel free to stop by CIS 101. Shadowmasks and photomasks, Suresh Biligiri (Photosciences) Wafer Bonding (EV Group) Features and Applications of Contact Lithography (EV Group) -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at snf.stanford.edu Wed Apr 21 07:41:09 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Wed, 21 Apr 2004 07:41:09 -0700 Subject: Open House, last day... Message-ID: <40868805.22CC1288@snf.stanford.edu> Hi all -- It's the second and last day of the open house, so I'm here to make the pitch... If you've ever wondered: - What is it that Paul, Pat, and Astrid are doing with those THICK substrates? - Why DOES Kevin roll in a cart FULL of electronic equipment every time he comes into the lab? - What exactly IS it that Eric P does (or is there anything that he doesn't do in the lab)? - What does Julia do, in between performing concert solos with symphonies? (Next concert, May 1.) - And what is CIS versus SNF? Secrets will be revealed in the CISX Auditorium today. Other Open House highlights: - Suss reveals a newly developed technology for low-temperature (200 C??!!) fusion bonding for clean substrates (and yes, the ksbonder is clean and is running, thanks to Colby, et al.) Abstract below. - Tas Tousimis, pioneer in table top critical point drying, will talk about the history of CPD and share some insights about process MEMS and doing cleans. - Shipley will discuss its line of chemicals, many of which will be introduced into the lab soon. This is your chance to see what's available and have your say about what you'd like to see in the lab! - EV will talk about nanoimprinting -- especially relevant for us, as EV is very generously donating (yes, donating!) a nanoimprint system to SNF. This tool does aligned UV-flash nanoimprint and aligned stamping of chemical inks/molecular monolayers. (It's due to arrive in July -- and we really want to recruit labmembers to put this system to the test!) - At the trade show, Technical Instruments has the COOLEST "toys" (nanomanipulators and other optical systems - and they let ANYONE drive them!) And one of the coolest things: Ann Marshall and her gang over at the SNL are giving tours and demos of their labs. (The poster session is also there.) If you missed Bob Sinclair's or Kyunhoon Min's presentations yesterday, you missed some of the most amazing -- and truly nanoscale -- images ever produced at Stanford. (And there will be another chance to see the FIB in action, when Dan Pickard, Dr. Gadget himself, presents today.) And here's Suss' wafer bonding abstract: Low Temperature Fusion Wafer Level Bonding A novel method of surface activation and direct wafer bonding for the manufacture of MEMS, opto-electronics, 3D packaging, and CMOS-MEMS devices will be discussed. The new SUSS patent pending technology reduces process temperatures from above 1000?C down to 200?C allowing new applications for wafer level integration, low temperature hermetic sealing and the creation of semiconductor materials such as silicon on insulator (SOI), III-V compounds and strained silicon using direct wafer bonding. Hope to see you here! Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mahnaz at snf.stanford.edu Wed Apr 21 09:20:57 2004 From: mahnaz at snf.stanford.edu (Mahnaz Mansourpour) Date: Wed, 21 Apr 2004 09:20:57 -0700 Subject: talk Message-ID: <40869F69.F52AC33@snf.stanford.edu> Hello all, There will be a talk today by Dr. Yaghmaie of Shipley given one in the morning at 10 am ( High Resolution I line resist ) and Duv lithography given at 2 pm, both talks are in CIS 101. I Strongly recommend both talks. mahnaz From mail at mbadi.com Thu Apr 22 03:07:29 2004 From: mail at mbadi.com (Mohammed H. Badi) Date: Thu, 22 Apr 2004 06:07:29 -0400 (EDT) Subject: ME342 students in the fab Message-ID: Hey all, By now you've no doubt seen the signs or the hordes of M342 students to which they allude in the fab. The course is an introductory MEMS class of which an important component is learning how to use certain tools in SNF. By the end of this week every student in the class will have been trained on the wet benches and a number of litho tools. As a result, we (the ME342 teaching staff) will be letting them loose in the fab over the next two weeks to do some processing on their own. The purpose of this email is to inform (warn?) you of this fact and to make a request. They will no doubt make some of the rookie mistakes we all did when we first started processing on our own (drink HF; pick up wafers with our gloves in front of Jim McVittie; flirt with Nancy Latta). When you see this, please (keeping in mind that they are new to this) take the time to show them the correct way to do things (sulfuric acid tastes better; wait until McVittie turns around; don't flirt with her -- she'll take your heart and your money and leave you flat). In fact, we've even instructed them to ask fellow SNF users if they have questions. Thank you for your continued patience and cooperation. Mohammed Badi ----- Mohammed H. Badi +1.650.906.0663 From lanzhangus at yahoo.com Wed Apr 21 17:31:28 2004 From: lanzhangus at yahoo.com (Lan Zhang) Date: Wed, 21 Apr 2004 17:31:28 -0700 (PDT) Subject: Training on Hitachi S800 Message-ID: <20040422003128.48133.qmail@web14302.mail.yahoo.com> Hello All, Just want to find out anyone who want to get trained on SEM(Hitachi S800) this week? If you interested, let me know your preferred time so I can arrange with Charley. Thanks, Lan --------------------------------- Do you Yahoo!? Yahoo! Photos: High-quality 4x6 digital prints for 25? -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at snf.stanford.edu Fri Apr 23 07:42:31 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Fri, 23 Apr 2004 07:42:31 -0700 Subject: Frosh tours Message-ID: <40892B57.1F803DEA@snf.stanford.edu> Calling all grad student labmembers -- How would you like to influence the the career decisions of students in the class of 2008? Here's your chance. "Admit Weekend" is this weekend, and the SNF has just been granted the opportunity to show off to prospective freshmen. If you are interested in leading a window tour of the lab, please drop me a note today. (The tour is scheduled for 10:15-11:15 on Saturday.) BTW: For volunteers, lunch (sometime next week?) is on me. Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From kaima at stanford.edu Fri Apr 23 11:09:41 2004 From: kaima at stanford.edu (Kai Ma) Date: Fri, 23 Apr 2004 11:09:41 -0700 (PDT) Subject: process questions Message-ID: Dear members, I have some process questions seeking your advice. Thank you very much in advance for your inputs! I have a CMOS chip which is completely finished, with passivation layers. The passivation layers are: 1um (HDP) SiO2 plus 0.4um nitride. After the passivation, some openings (~20um by 20um big) were made to expose the metal layer underneath for later flip-chip bonding purpose and to expose metal contact pads. The last layer of metal that is exposed is ~1um thick, consisted of 100A Ti, 200A TiN, 8500A Al with 0.5% Cu, and then the last layer is 250A TiN. What I am going to do is to grow 1um GaAs on top of the top SiN layer using MBE. The growth process will deposit GaAs everywhere on the chip, including inside the openings. After growth, I need to etch the GaAs grown in the original opening area to expose metal for later contact. My questions are: 1. Do you know how I can etch the poly-GaAs grown inside the openings, but not to damage the metal layer (250A TiN) underneath? 2. If there exists a way to do this selective etch, great! In case it is not possible, I am thinking to deposit a thin SiO2 layer on top first, then grow GaAs. Because those openings were made somehow, there must be a way to do selective etch between SiO2 and TiN. Unfortunately, the chip was made by someone else who I lost contact. Do you know how they etched the SiN+SiO2 layer but not to damage TiN and other metal layers? 3. Before the deposition, I hope to clean the chip a bit because it has been sitting in air for more than a year. Do you know a way that cleans the SiN layer but not to damage the exposed metal? Thank you very much for your help with any of the questions! Kai From kaima at stanford.edu Mon Apr 26 02:16:20 2004 From: kaima at stanford.edu (Kai Ma) Date: Mon, 26 Apr 2004 02:16:20 -0700 (PDT) Subject: selective etch question In-Reply-To: Message-ID: Dear labmembers: I am wondering if there is a way to selectively etch GaAs film (possibly poly-GaAs) on top of 250A TiN (not to damage TiN)? Thank you very much for your advice! Or, maybe you can suggest a good source to search? Many thanks! Kai From LCascao at genencor.com Mon Apr 26 14:21:48 2004 From: LCascao at genencor.com (LCascao at genencor.com) Date: Mon, 26 Apr 2004 14:21:48 -0700 Subject: Annealing of Gold Films Message-ID: Hello All, I'm interested in annealing gold thin-films (100 nm - 300 nm) either sputtered or evaporated onto silicon wafers or borofloat glass to form (111) terraces for self-assembly of lipids. Does anyone have an annealing recipe that works? Also, should I avoid using an adhesion layer between the gold and the silicon substrate? Thanks Luis Cascao -------------------------------------------------------------------------- This message (including any attachments) may contain information which is confidential or privileged. Use, dissemination, distribution, or reproduction of this message by unintended recipients is not authorized and may be unlawful. If you are not the intended recipient, please advise the sender immediately by reply e-mail and delete this message and any attachments without retaining a copy. -------------------------------------------------------------------------- -------------- next part -------------- An HTML attachment was scrubbed... URL: From rcrane at snf.stanford.edu Wed Apr 28 15:48:38 2004 From: rcrane at snf.stanford.edu (Dick Crane) Date: Wed, 28 Apr 2004 15:48:38 -0700 Subject: Building evacuation 4.28.04 Message-ID: <409034C6.B539A9AA@snf.stanford.edu> Hello building dwellers and lab users, Today, Wednesday, April 28, at a few minutes before noon, the SNF fab and CIS and CISX buildings were evacuated due to a toxic gas sensor alarm. The alarm was false, no toxic gases were involved. I am quite certain the alarm was caused by boiler start-up activities at the Cardinal Co-Gen power plant next door to us. Several gas detectors in the CISX building and in the toxic vault simultaneously indicated the presence of a hydride type gas with one detector exceeding its trip point of 50ppb. Looking at the detector history revealed a pattern which fit the co-gen plant's start-up activities. I will be in contact with the co-gen's operators to further explore what happened and to take measures to prevent a reoccurrence. Thanks for your patience, Dick Crane SNF Operations Manager From pruitt at stanford.edu Fri Apr 30 10:40:23 2004 From: pruitt at stanford.edu (Beth Pruitt) Date: Fri, 30 Apr 2004 10:40:23 -0700 Subject: Fwd: Biosystems at SNL/CA seeks summer internship students Message-ID: > >The Biosystems Research Department at Sandia National Labs (Livermore, CA) >is currently looking for students interested in participating in summer >internships. Students would be part of an interdisciplinary team involved >with microfluidics and proteomics applications, as well as research on >development of protein microarrays. The potential exists for students to >gain cleanroom experience. We are particularly interested in motivated, >independent BS or MS students who are considering pursuing a PhD. The term >of the internship is flexible, although a minimum of 10 weeks is suggested, >and start/end dates will be set based upon the applicant's schedule. >Location, pay and experience are excellent. In addition, Sandia/CA has an >established technical and social program for the student intern community. >See http://education.ca.sandia.gov/internships/index.lhtml for detailed >internship program information, contact Amy Herr directly via email (please >include a resume)if you are interested. Intern selections will be made by >May 7th. >---------------------------------------------------------- >Amy E. Herr, Ph.D. >Research Scientist >Biosystems Research Department >Sandia National Laboratories >Livermore, CA 94551 > >aeherr at sandia.gov >(p) 925-294-3738 >(f) 925-294-3020 >http://roswell.ca.sandia.gov/herr.html