From mmager at stanford.edu Tue Aug 3 09:19:50 2004 From: mmager at stanford.edu (Morgan Douglas Mager) Date: Tue, 3 Aug 2004 09:19:50 -0700 Subject: Dry etching of small features Message-ID: <1091549990.410fbb2635486@webmail.stanford.edu> I was wondering if anyone has experience etching small features in thin layers and could share with me what tools/recipes seemed to work? I will be definine 100nm wide features with ebeam lithography, then metallizing, then dry etching. The active layer is 20nm thick Si (I'm interested in both amorphous and poly) and the stop layer is oxide. Selectivity isn't much of an issue, as I'll be stripping the oxide anyway, but I do care about undercutting of the Si feature layer. Any thoughts or advice? Thanks. -Morgan From cvenky at stanford.edu Tue Aug 3 11:56:30 2004 From: cvenky at stanford.edu (Venkatesh Hanumant Rao Chembrolu) Date: Tue, 3 Aug 2004 11:56:30 -0700 Subject: Getting rid of photoresist Message-ID: <1091559390.410fdfde6ea99@webmail.stanford.edu> Hi, I am looking for a solvent to get rid of photoresist which has hardened after being exposed to Ar etch in MRC. I was using PR as the etch mask to protect some metal layers beneath. Soaking in Acetone for a day doesnt rip it off completely (and I am reluctant to use oxgen plasma as it will be harsh on the metal layers.) Has anyone dealt with something like this before? Many thanks. Venkatesh From mbaran at stanford.edu Tue Aug 3 15:38:45 2004 From: mbaran at stanford.edu (Maureen Baran) Date: Tue, 3 Aug 2004 15:38:45 -0700 Subject: Honda Car Key Found Message-ID: <200408032238.i73McjS2005031@smtp1.Stanford.EDU> I have a lone Honda car key sitting at my desk. If it is yours and you would like to go home tonight, please see me in cubicle 41. Maureen Maureen Baran Stanford Nanofabrication Facility Lab Services Administrator mbaran at stanford.edu 650-725-3664 -------------- next part -------------- An HTML attachment was scrubbed... URL: From maureen at cis.stanford.edu Tue Aug 3 15:01:27 2004 From: maureen at cis.stanford.edu (Maureen Rochford) Date: Tue, 3 Aug 2004 15:01:27 -0700 Subject: Eric Pop orals abstract Message-ID: >Stanford University Ph.D. Oral Examination > >Self-Heating and Scaling of Silicon Nano-Transistors > >Eric Pop >Department of Electrical Engineering > >Packard 101 >Thursday, August 5, 2004 >1:30 PM - 2:30 PM >(refreshments served at 1:15 PM) > >The most often cited technological roadblock of nanoscale electronics is >the "power problem," i.e. power densities and device temperatures reaching >levels that will prevent their reliable operation. Current technology >roadmap (ITRS) requirements are expected to lead to more heat dissipation >problems, especially with the transition toward complex device geometries >(SOI, FinFET) and new materials with poor thermal properties. > >This talk examines the physics of heat generation in silicon, and in the >context of nanoscale CMOS transistors. A new Monte Carlo code (MONET) is >introduced which uses analytic descriptions of both the electron bands and >the phonon dispersion. Detailed heat generation statistics are computed >in bulk and strained silicon, and within simple device geometries. It is >shown that non-stationary transport affects heat generation near strongly >peaked electric fields, and that the generated phonons have non-uniform >lifetimes, velocities and contributions to heat transport. > >In addition, the talk explores nano-transistor design and scaling from an >electro-thermal point of view. A compact thermal model for ultra-thin body >(SOI, GOI) devices is described, using the most advanced understanding of >nanoscale heat conduction available. Self-heating is sensitive to several >device parameters, e.g. raised source/drain height, and to boundary thermal >resistance. The analysis shows it is possible to optimize device geometry >such as to simultaneously minimize operating temperature (better current, >reliability) and intrinsic gate delay (higher speed). > -- Maureen E. Rochford Stanford University Center for Integrated Systems 420 Via Palou Mall Stanford, CA 94305-4070 Phone: (650) 725-3627 Fax: (650) 725-0991 From mary2006 at jhu.edu Thu Aug 5 12:48:40 2004 From: mary2006 at jhu.edu (MARY ANITO) Date: Thu, 05 Aug 2004 12:48:40 -0700 Subject: Wet Bench General Time CTB Message-ID: <13f632113f2d1a.13f2d1a13f6321@jhumail.jhu.edu> An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: manito1.vcf Type: text/x-vcard Size: 189 bytes Desc: Card for MARY ANITO URL: From rcrane at snf.stanford.edu Thu Aug 5 14:25:10 2004 From: rcrane at snf.stanford.edu (Dick Crane) Date: Thu, 05 Aug 2004 14:25:10 -0700 Subject: hepa air handler test 8/12 Message-ID: <4112A5B5.C9503D24@snf.stanford.edu> SNF fab users, We will conducting air particle measurements of the fab hepa filtered air at a reduced air flow rate on Thursday evening, August 12, from 2200 to 0600 Friday morning. During this time the air flow through the ceiling hepa filters will be reduced from 70 linear feet per minute (lft/m) to 40 lft/m. A technician will be in the fab measuring particle counts at various locations within the fab. Given the low level of people activity during these hours, I suspect that we will see little change in particle counts from what we see during the day while at 70 lft/m. The purpose of the test is to collect data to evaluate to allow a decision to be made concerning reducing the air flow during the hours of 2200 to 0600 nightly. This flow reduction has been successfully done in the past, but was stopped for a motor control reason several years ago. Given our $2,500 to $3,000 daily electrical cost, we wish to reestablish this program as an energy reduction measure. Please contact me if there are questions. Thanks, Dick Crane Operations Manager Stanford Nanofabrication Facility From curlwang at stanford.edu Thu Aug 5 14:33:58 2004 From: curlwang at stanford.edu (Ke Wang) Date: Thu, 5 Aug 2004 14:33:58 -0700 (PDT) Subject: responses on thermal stress Message-ID: Hello All, I sent out an email asking about multi-layer thin film thickness and thermal stress. Thanks for all the responses! Here's a summary of what I got. Resources: Z.Q. Jiang et al., Thermal Stresses in Layered Electronic Assemblies. ASME J. of Electronic Packaging, Vol 119(1997), pp.127-132. Microsystem design" writen by Stephen D. Senturia, Kluwer Academic Publishers. " Part III" MSE 353 (Mechanical properties of thin films) and MSE 352 (thin film stress analysis) class notes Ideas/Experiences: -Use formula t1*s1+t2*s2+t3*s3+...=0 (t: film thickness; s: stress) to design stress compensated film stack; -the stress of each film is linearly proportion to the thickness -room temperature depositions Hope this would be useful to your research! Ke _____________________________________________ Ke Wang PHD Candidate Department of Applied Physics, Stanford University CISX B113-14 Stanford, CA 94305-4070 Phone: (650)723-8040 From shott at snf.stanford.edu Fri Aug 6 08:58:18 2004 From: shott at snf.stanford.edu (John Shott) Date: Fri, 6 Aug 2004 08:58:18 -0700 Subject: Missing Coax/Triax adapters for probe station ... Message-ID: SNF Lab Members: As those of you who have attempted to use the Micromanipulator Probe Station are aware, the set of coaxial to triaxial adapters is missing. If you know where these are, please return them. While I have placed an order for replacement adapters, they will likely not be delivered for a week or so. Thank you for your consideration, John -------------- next part -------------- An HTML attachment was scrubbed... URL: From beckwith at cis.stanford.edu Tue Aug 10 10:11:17 2004 From: beckwith at cis.stanford.edu (Sharleen Beckwith) Date: Tue, 10 Aug 2004 10:11:17 -0700 Subject: 7 wafers with 2um of SiO2 Message-ID: I have these wafers (16hrs. @ 1000C) if anyone can use them. Let me know and they are yours. Sharleen From beckwith at cis.stanford.edu Tue Aug 10 10:12:55 2004 From: beckwith at cis.stanford.edu (Sharleen Beckwith) Date: Tue, 10 Aug 2004 10:12:55 -0700 Subject: 21 wafers with 1000A SiO2 + 6500A poly Message-ID: I have these wafers if anyone can use them. Let me know and they are yours. Sharleen From mrolandi at stanford.edu Tue Aug 10 11:50:21 2004 From: mrolandi at stanford.edu (Marco Rolandi) Date: Tue, 10 Aug 2004 11:50:21 -0700 (PDT) Subject: missing samples Message-ID: Hello, on friday evening two black boxes labelled Marco growth 7 and growth 8 with the date were put in the ebeam passthrough. I went and picked them up on monday morning and they were not there. Has anybody seen them around?? Did anybody picked them up by mistake? These are very valuable and represent multiple hours of work. Thanks, Marco. ------------------------------------------------------------------------------- Marco Rolandi PhD Candidate Department of Applied Physics Dai Group Department of Chemistry Stanford University Stanford, 94305 phone: (650) 725-9156 From dilee at stanford.edu Tue Aug 10 12:09:36 2004 From: dilee at stanford.edu (Dong-Ick Tony Lee) Date: Tue, 10 Aug 2004 12:09:36 -0700 Subject: Nitrogen Fluoride(NF3) Message-ID: <002e01c47f0d$94b52b60$c6db81c6@tony> Dear Labmembers, We are looking for purchasing the Nitrogen Fluoride(NF3) gas. We have asked SSRL about it. They said it would take 6 weeks and cost 1400$. Does anyone know any place that we can buy it quicker and cheaper? Thanks a lot, Dong-Ick -------------- next part -------------- An HTML attachment was scrubbed... URL: From beckwith at cis.stanford.edu Tue Aug 10 16:08:20 2004 From: beckwith at cis.stanford.edu (Sharleen Beckwith) Date: Tue, 10 Aug 2004 16:08:20 -0700 Subject: All of the wafers have been given away! Message-ID: If I would have know how popular they were, I would have sold them on EBAY! : ) Sharleen From yinliu at lwmicrosystems.com Tue Aug 10 16:32:03 2004 From: yinliu at lwmicrosystems.com (Yin Liu) Date: Tue, 10 Aug 2004 16:32:03 -0700 Subject: Help needed on photo-resist stripper References: Message-ID: <003b01c47f32$3e4b4870$0200a8c0@D960R031> Hi there I have contaminated wafers which need to be released in O2 plasma. Drytech is too slow. Do you know any vender who has a Matrix or similar system can perform the work? Thanks! Yin Liu From mtang at snf.stanford.edu Wed Aug 11 13:44:36 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Wed, 11 Aug 2004 13:44:36 -0700 Subject: [Fwd: Friday @ 2:30 ME342 project presentations] Message-ID: <411A8534.3366E7A9@snf.stanford.edu> An invitation! -------- Original Message -------- Subject: Friday @ 2:30 ME342 project presentations Date: Tue, 10 Aug 2004 20:02:40 -0700 From: Beth Pruitt Dear Friends, please join us for the Final Presentations of the ME342 MEMS Lab Summer Projects August 13, this Friday 2:30-5 pm Open poster session and refreshments ME Research Laboratories (MERL) lobby for background on the course and projects, please see: http://www.stanford.edu/class/me342/b/index.html MERL is located at 418 Panama Mall thanks for your continued support, we hope to see you there! Beth Pruitt Mechanical Engineering Assistant Professor Stanford University office: 650-723-4559 fax: 650-723-1778 From ness at stanford.edu Wed Aug 11 22:23:11 2004 From: ness at stanford.edu (Kevin Dean Ness) Date: Wed, 11 Aug 2004 22:23:11 -0700 (PDT) Subject: Plastic/Glass Micro-Channel Chip Companies/Vendors/Foundries Message-ID: Hello, I could use some help identifying possible vendors or commercial foundries to fabricate micro-channel plastic and/or glass chips. Any names of companies you can recommend would be very helpful. For those interested in more details about my specific requirements please read below. Thanks in advance for your help... Kevin Ness MORE DETAILS: I will send them the mask layout for fluidic port locations (~500 um diameter) and the micro-channel top view layout (micro-channel details -- rectangular geometry ~50 um deep x ~500 um wide). I would like them to fab fluid ports in top layer, fab u-channels in the bottom layer and fuse/bond the two layers together. If possible I would like electrodes fabricated in the fluid wells (for E-field) and the ability (NOT NECESSARY) to perform metalization (before bonding) at the bonded interface for temperature sensing and actuation. From shott at snf.stanford.edu Thu Aug 12 07:28:06 2004 From: shott at snf.stanford.edu (John Shott) Date: Thu, 12 Aug 2004 07:28:06 -0700 Subject: Probe Station Triaxial to Coaxial Converters ... Message-ID: <411B7E76.4000404@snf.stanford.edu> SNF Labmembers: The new set of Triaxial to Coaxial converters for use with the Micromanipulator 6000 probe station have arrived. I've placed them in a small plastic petri dish on top of the probe station. When you are done, please return them to this location. If you wish to use these elsewhere .... don't! You can buy your own from Trompeter Electronics, Inc. (http://www.trompeter.com). Trompeter has the most extensive collection of RF and low-current cable adapters that I have seen. Thanks for your continued support, John From curlwang at stanford.edu Thu Aug 12 08:37:42 2004 From: curlwang at stanford.edu (Ke Wang) Date: Thu, 12 Aug 2004 08:37:42 -0700 (PDT) Subject: Plastic/Glass Micro-Channel Chip Companies/Vendors/Foundries In-Reply-To: Message-ID: Hi Kevin, One vendor I know is BURLE INDUSTRIES, INC, though I've never tried. They routinely make glass capillary arrays with regular closely-spaced pores as small as 2 um in diameter. These arrays can be designed with variable spacing and pore diameters. www.burle.com Hope this helps. Ke On Wed, 11 Aug 2004, Kevin Dean Ness wrote: > Hello, > I could use some help identifying possible vendors or commercial foundries > to fabricate micro-channel plastic and/or glass chips. > > Any names of companies you can recommend would be very helpful. > > For those interested in more details about my specific requirements please > read below. > > Thanks in advance for your help... > > Kevin Ness > > > MORE DETAILS: > I will send them the mask layout for fluidic port locations (~500 um > diameter) and the micro-channel top view layout (micro-channel details -- > rectangular geometry ~50 um deep x ~500 um wide). > > I would like them to fab fluid ports in top layer, fab u-channels in the > bottom layer and fuse/bond the two layers together. > > If possible I would like electrodes fabricated in the fluid wells (for > E-field) and the ability (NOT NECESSARY) to perform metalization (before > bonding) at the bonded interface for temperature sensing and actuation. > _____________________________________________ Ke Wang PHD Candidate Department of Applied Physics, Stanford University CISX B113-14 Stanford, CA 94305-4070 Phone: (650)723-8040 From EricS at Bridgewave.com Thu Aug 12 12:02:20 2004 From: EricS at Bridgewave.com (Eric Sanjuan) Date: Thu, 12 Aug 2004 12:02:20 -0700 Subject: Plastic/Glass Micro-Channel Chip Companies/Vendors/Foundries Message-ID: hi, one option is http://www.micralyne.com/index.html eric sanjuan -----Original Message----- From: Kevin Dean Ness [mailto:ness at stanford.edu] Sent: Wednesday, August 11, 2004 10:23 PM To: labmembers at snf.stanford.edu Cc: david_oksenberg at hotmail.com Subject: Plastic/Glass Micro-Channel Chip Companies/Vendors/Foundries Hello, I could use some help identifying possible vendors or commercial foundries to fabricate micro-channel plastic and/or glass chips. Any names of companies you can recommend would be very helpful. For those interested in more details about my specific requirements please read below. Thanks in advance for your help... Kevin Ness MORE DETAILS: I will send them the mask layout for fluidic port locations (~500 um diameter) and the micro-channel top view layout (micro-channel details -- rectangular geometry ~50 um deep x ~500 um wide). I would like them to fab fluid ports in top layer, fab u-channels in the bottom layer and fuse/bond the two layers together. If possible I would like electrodes fabricated in the fluid wells (for E-field) and the ability (NOT NECESSARY) to perform metalization (before bonding) at the bonded interface for temperature sensing and actuation. From izuleta at stanford.edu Thu Aug 12 12:43:24 2004 From: izuleta at stanford.edu (Ignacio A. Zuleta) Date: Thu, 12 Aug 2004 12:43:24 -0700 Subject: Plastic/Glass Micro-Channel Chip Companies/Vendors/Foundries In-Reply-To: Message-ID: <200408121943.i7CJhP4V020588@smtp1.Stanford.EDU> Dear Kevin and other users, The guys at http://www.collimatedholes.com/ do glass capillary arrays here in the Bay Area. I hope this helps. Ignacio A. Zuleta -----Original Message----- From: Ke Wang [mailto:curlwang at stanford.edu] Sent: Thursday, August 12, 2004 8:38 AM To: Kevin Dean Ness Cc: labmembers at snf.stanford.edu; david_oksenberg at hotmail.com Subject: Re: Plastic/Glass Micro-Channel Chip Companies/Vendors/Foundries Hi Kevin, One vendor I know is BURLE INDUSTRIES, INC, though I've never tried. They routinely make glass capillary arrays with regular closely-spaced pores as small as 2 um in diameter. These arrays can be designed with variable spacing and pore diameters. www.burle.com Hope this helps. Ke On Wed, 11 Aug 2004, Kevin Dean Ness wrote: > Hello, > I could use some help identifying possible vendors or commercial > foundries to fabricate micro-channel plastic and/or glass chips. > > Any names of companies you can recommend would be very helpful. > > For those interested in more details about my specific requirements > please read below. > > Thanks in advance for your help... > > Kevin Ness > > > MORE DETAILS: > I will send them the mask layout for fluidic port locations (~500 um > diameter) and the micro-channel top view layout (micro-channel details > -- rectangular geometry ~50 um deep x ~500 um wide). > > I would like them to fab fluid ports in top layer, fab u-channels in > the bottom layer and fuse/bond the two layers together. > > If possible I would like electrodes fabricated in the fluid wells (for > E-field) and the ability (NOT NECESSARY) to perform metalization > (before > bonding) at the bonded interface for temperature sensing and actuation. > _____________________________________________ Ke Wang PHD Candidate Department of Applied Physics, Stanford University CISX B113-14 Stanford, CA 94305-4070 Phone: (650)723-8040 From jules83 at stanford.edu Thu Aug 12 16:37:39 2004 From: jules83 at stanford.edu (Julia R Greer) Date: Thu, 12 Aug 2004 16:37:39 -0700 Subject: Si beams? Message-ID: <020901c480c5$5ad2e5e0$d37640ab@Touffler> Hey, Is anyone out there making simple Si rectangular beams (maybe ~100um thick x ~250um wide x ~400um long)? It does not have to be that exact, but if there IS someone like that who might have a couple of screw-ups, I would love to utilize them for some mechanical testing. Please please please let me know! Thank you 83,000 times! -Julia -------------- next part -------------- An HTML attachment was scrubbed... URL: From rcrane at snf.stanford.edu Mon Aug 16 08:20:23 2004 From: rcrane at snf.stanford.edu (Dick Crane) Date: Mon, 16 Aug 2004 08:20:23 -0700 Subject: hepa air handler test 8/19 Message-ID: <4120D0B7.EEACBBCB@snf.stanford.edu> SNF fab users, We will conducting air particle measurements of the fab hepa filtered air at a reduced air flow rate on Thursday evening, August 19, from 2200 to 0600 Friday morning (rescheduled from last Thursday's test date). During this time the air flow through the ceiling hepa filters will be reduced from 70 linear feet per minute (lft/m) to 40 lft/m. A technician will be in the fab measuring particle counts at various locations within the fab. Given the low level of people activity during these hours, I suspect that we will see little change in particle counts from what we see during the day while at 70 lft/m. The purpose of the test is to collect data to evaluate to allow a decision to be made concerning reducing the air flow during the hours of 2200 to 0600 nightly. This flow reduction has been successfully done in the past, but was stopped for a motor control reason several years ago. Given our $2,500 to $3,000 daily electrical cost, we wish to reestablish this program as an energy reduction measure. Please contact me if there are questions. Thanks, Dick Crane Operations Manager Stanford Nanofabrication Facility From rissman at stanford.edu Mon Aug 16 10:14:31 2004 From: rissman at stanford.edu (Paul Rissman) Date: Mon, 16 Aug 2004 10:14:31 -0700 Subject: FY2005 SNF rates Message-ID: <5.1.1.5.2.20040816101234.028129c8@rissman.pobox.stanford.edu> As you know, SNF has been struggling with budgets concerns. Early in July, our Executive Director, Yoshio Nishi, informed the labmember community of upcoming rate increases. In late July, the SNF Faculty Advisory Committee recommended specific changes to the SNF rate structure in order to balance income and costs. A modified proposal was presented to key labmembers last week. Given the concerns of some of our labmembers and the limited time to implementation of the FY2005 rates, the SNF executive committee has decided on the following: 1. There will be NO CHANGE to the industrial cap and NO IMPLEMENTATION of a soft cap on 9/1/04. SNF management will review expenses/income and make a recommendation by 9/15/04 for changes effective 11/1/04 with regards to the cap and a soft cap. 2. There WILL be small changes reflecting inflation and increased cost of doing business, effective on 9/1/04: a. There will be an overall increase in rates for academic and industrial users of 3.5% to $77.63/hour and $155.25/hour respectively. In the future, you should expect the rates to increase by 3.5% annually. b. The training rate will be increased from $45/hour to $75/hour. In the future, the training rate will increase by 3.5% annually. c. The recharge rate will be increased from $45/hour to $50/hour, effective 9/1/04. In the future the recharge rate will increase by 3.5% annually. I want to reassure the labmember community that every member is important and I appreciate the feedback I have received so far. In fact, I want to encourage everyone to send me their thoughts and ideas, or visit me personally. Nonetheless, we are facing budget concerns in addition to trying to meet the challenges of improving our capabilities, while at the same time continuing to provide satisfactory service. My job is to facilitate this, which is, as I hope you all understand, is an enormously difficult task. I hope you value this lab, the lab community, and our organization the way I have come to value it. As such, I hope you will work with me to support changes that will be required to sustain it without sacrificing any of the qualities that make this a uniquely productive, creative place to work. Sincerely, Paul Rissman From altug at stanford.edu Mon Aug 16 19:11:17 2004 From: altug at stanford.edu (Hatice Altug) Date: Mon, 16 Aug 2004 19:11:17 -0700 Subject: Lost pieces in 4" wafer box References: <412152C9.1030609@snf.stanford.edu> Message-ID: <002901c483ff$7ae6c620$675440ab@hatice> Hi all, On Sunday (yesterday-16 Aug 2004) I used Raith (e-beam tool) and put my 4" wafer box with pieces in it in the e-beam passage window, it has my login "ALTUG" written on it together with other notes. I found the rest of my boxes there except this one. Has anybody seen it around? Does anybody take it by mistake? The pieces are very valuable for me as they cost a lot of cleanroom work time. thanks, -hatice -------------- next part -------------- An HTML attachment was scrubbed... URL: From shiwei20012002 at yahoo.com Wed Aug 18 06:51:03 2004 From: shiwei20012002 at yahoo.com (Wei Shi) Date: Wed, 18 Aug 2004 06:51:03 -0700 (PDT) Subject: Clean off SnO2 Message-ID: <20040818135103.11508.qmail@web21203.mail.yahoo.com> Dear members, I have 13 um thick Sn layer covered with natural SnO2 on top. I want to: (1). Clean off SnO2 (2). Cut 13 um Sn into 5 um Sn, if possible. Do you have any solutions towards them? Thanks in advance, Wei Shi --------------------------------- Do you Yahoo!? New and Improved Yahoo! Mail - 100MB free storage! -------------- next part -------------- An HTML attachment was scrubbed... URL: From vigneshg at stanford.edu Thu Aug 19 16:44:18 2004 From: vigneshg at stanford.edu (Vignesh G Shankar) Date: Thu, 19 Aug 2004 16:44:18 -0700 Subject: Spare Si wafers? Message-ID: <5.2.1.1.2.20040819164025.02eafdc0@vigneshg.pobox.stanford.edu> Hi All, I was wondering if any of you had and were willing to donate wafers of any of these types: 1) Intrinsic 2) n-type doped: resistivity around 0.1-1 Ohm-cm 3) n-type doped: resistivity around 10 - 20 Ohm-cm I just need one wafer of each type. Alternatively, if any you knew where I could get them from, without having to buy a lot of 25, do let me know. The CIS stockroom does not have these, as far as I could see. Thanks, Vignesh. From erictao at stanford.edu Sat Aug 21 12:51:06 2004 From: erictao at stanford.edu (Eric Tao) Date: Sat, 21 Aug 2004 12:51:06 -0700 Subject: PECVD Nitride densification Message-ID: <6.0.1.1.2.20040821124752.02722790@erictonn.pobox.stanford.edu> HI all, Anyone has experience of densifying Silicon Nitride layer deposited with PECVD? What temp. did you use and how much was it densified? (I have metal layer underneath). Thanks in advance. -eric From amf at amfitzgerald.com Sat Aug 21 15:10:02 2004 From: amf at amfitzgerald.com (Alissa M. Fitzgerald) Date: Sat, 21 Aug 2004 15:10:02 -0700 (PDT) Subject: mystery bag near wbgaas Message-ID: <20040821221002.85440.qmail@web52602.mail.yahoo.com> Hello labmembers, This Sat at ~1pm I found a clear plastic ziploc bag containing what appears to be waste (crumpled al foil, gloves, wipes) sitting on the work bench opposite wbgaas. If this is your bag, please come back to the lab immediately and dispose of it properly! -Alissa From ethrush at stanford.edu Mon Aug 23 09:48:09 2004 From: ethrush at stanford.edu (Evan Thrush) Date: Mon, 23 Aug 2004 09:48:09 -0700 Subject: University Oral Examination- Evan Thrush (Aug. 31, 1:30pm) Message-ID: <002601c48930$f8a53a70$476140ab@ethrush> University Oral Examination "Semiconductor Integrated Fluorescence Sensor" Evan Thrush Department of Electrical Engineering Stanford University 1:30pm, Tuesday, August 31, 2004 Packard 101 (Refreshments served at 1:15 in Packard 102) Abstract: Fluorescence sensing is one of the most commonly used methods to study biological systems. Unfortunately, conventional fluorescence detection systems typically use bulky and discrete components which are expensive and non-portable. The goal of this work is to create an integrated fluorescence sensing solution by capitalizing on optoelectronics developed for telecommunications. By building upon technology used for telecommunications, it is believed that huge cost reductions are possible when compared to other integrated approaches and may open a wide range of interesting applications. Potential applications of such a sensor are numerous and include portable and disposable medical diagnostics, highly parallel research instrumentation and biological implants. In this work, all the components of a conventional fluorescence sensing system (laser, photodetector and optical filter) are monolithically integrated on GaAs. The integration is achieved through a simple modification to a vertical-cavity surface-emitting laser (VCSEL) to create a PIN photodetector and optical filter. These optoelectronic components and their interaction are characterized. By bringing the laser and photodetector together in such close proximity (* 50mm), laser background sources are created that limit sensitivity. Laser background sources are studied, and design solutions are proposed and implemented to reduce laser background. With integrated metal optical blocks, greater than 106 optical isolation between the photodetector and laser is achieved, which shows that highly sensitive detection is possible despite the monolithic integration The sensor is integrated with microfluidic channels to test sensitivity. The experimental and theoretical limits of detection of IR-800 dye are determined to be 250nM and 40nM respectively. These detection limits are sufficient for certain applications such as immunology. Large increases in sensor sensitivity are possible through the systematic reduction of the laser background and will enable more applications. Results suggest that order of magnitude increases in sensitivity will be possible by improving the performance of the optical filter and increasing spatial filtration. It is believed that this technology holds great potential to reach sub-nM detection limits and compete against bulk optic approaches. -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: thrush_abstract.pdf Type: application/pdf Size: 54239 bytes Desc: not available URL: From edmyers at stanford.edu Mon Aug 23 11:48:28 2004 From: edmyers at stanford.edu (Ed Myers) Date: Mon, 23 Aug 2004 11:48:28 -0700 Subject: Gasonic and Matrix Ashers Message-ID: <6.0.1.1.2.20040823113156.01b09ec0@edmyers.pobox.stanford.edu> SNF Lab Members, The Gasonic Aura Asher is ready for use. The tool is designated strictly for Non-metals and Standard Metals Only. The asher is for whole wafers only, no pieces will be allowed in the tool. The Gasonic will be replacing the Matrix Asher as the Clean Asher for the facility. The goal is to have all certified Matrix users transfer their processes to the Gasonic by Oct. 1st. Beginning October 1st, the Matrix Asher will migrate to the Gold Contaminated equipment group and become available for processing gold contaminated wafers. There will be a general training session on Thursday Aug. 26th at 2:00 pm at the Gasonic which is open for anyone to attend. Training can be scheduled by emailing Ed Myers at emyers at snf.stanford.edu or edmyers at stanford.edu. Regards, Ed Myers Stanford Nanofabrication Facility CIS Room 143, Mail Code 4070 Stanford, CA 94305 (650)725/4702 edmyers at stanford.edu From mtang at snf.stanford.edu Mon Aug 23 13:02:13 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Mon, 23 Aug 2004 13:02:13 -0700 Subject: Safety Issue: Chemical Handling Message-ID: <412A4D45.A6BF19C8@snf.stanford.edu> Labmembers: There has been a rash of incidents in involving handling of chemicals and chemical waste in the lab. Unlabeled beakers containing chemicals have been found ? on one occasion, ON TOP of an exhausted hood station, where it donated resist fumes to the litho area. In one appalling instance, someone placed a yellow hazardous waste bag containing resist waste, untied, and without a label, into the regular trash can. The custodian, doing his regular cleanup, complained about the smell to Mario, who took care of it... however irresponsible it is to expose fellow labmates to unknown chemicals, it is utterly unconscionable to expose the custodial staff. Then, just this weekend, a concerned labmember found and reported an unlabeled bag of solid waste near wbsolvent and two more unlabeled beakers of resist were found in a litho bench. I?m sure that no one intentionally did these things. And equally sure that it would be difficult to find the person(s) responsible. However, in following up on each of these incidents, I seem to always get at least one response from someone who noticed something wrong at the time, but was too busy or shy to do or say anything... Please... We are ALL RESPONSIBLE FOR SAFETY in the lab!! Even if you are not the person who did these things, this is your lab too (and your air that you are breathing.) If you see someone engaging in an unsafe situation, you should be able to tell the person about your concerns. At the very least, you should let a staff member know or email safety at snf.stanford.edu with your concerns. If you see chemical waste that has been improperly handled or dispose of, please tell someone (safety at snf.stanford.edu or your friendly neighborhood staffer). If you aren?t sure and it?s off hours, ask your fellow labmembers and send an email (safety at snf.stanford.edu). Consider this an utlimatum: Paul Rissman is making safety a top priority. He?s the new sheriff in town, and I?m a deputy. So, for each safety incident encountered in the lab that we can?t trace, we?ll impose a penalty on EVERYONE who has enabled equipment in the vicinity. The penalties thus far are relatively light and consist of taking the safety test (for those old-timers who haven?t done so) or providing an acceptable multiple-choice question that can be used for the test. NO, there?s no guarantee that the person who did this is also getting penalized. YES, there will be a number of people who are getting penalized who are in no way responsible. YES, there may be some innocent people who get penalized multiple times. However, the penalty is small ? please view this as an act of community service to improve safety and safety awareness. (And if anyone can think of a better method for eliminating these chemical safety handling problems, we?ll gladly discuss this with you.) I trust everyone is as concerned as we are about making sure the lab is a safe place to work. And did I tell you that we have a safety group, who can be reached at safety at snf.stanford.edu? If you have any questions, comments, or concerns about this, please email safety at snf.stanford.edu. Thanks for your attention -- Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From leet at stanford.edu Mon Aug 23 13:45:59 2004 From: leet at stanford.edu (Thomas T. Lee) Date: Mon, 23 Aug 2004 13:45:59 -0700 Subject: Sleeping in the lab Message-ID: <5.2.1.1.2.20040823132437.02089310@leet.pobox.stanford.edu> Hi everyone, A big thanks to Mary for her reminder about safety in the lab. I have another concern that I think should be brought to everyone's attention. I've noticed people hunched over in chairs sleeping in the lab late at night several times in the last few weeks. For the safety of yourself and everyone in the lab, if you're so tired that you need to sleep, PLEASE GO HOME AND GO TO BED. If you sleep in the lab, you have NO AWARENESS OF THE SITUATION AROUND YOU. If an emergency should arise, you would have no idea what was happening and would be unable to respond. It would take you substantially longer to evacuate the lab. Furthermore, if you're so tired that you need to sleep, YOU CAN'T HANDLE CHEMICALS SAFELY. Even after you take a nap, your abilities are probably impaired, and you present a hazard to yourself and your fellow labmembers. Finally, YOU'LL GET BETTER SLEEP IN YOUR OWN BED! Sleeping in chairs isn't good sleep, and if you don't get good sleep one night, it affects your abilities for days afterward. The bottom line is, IF YOU'RE TIRED, GO HOME. I know that deadlines and equipment bottlenecks often force people to work late, but nothing that you could be working on is worth risking your health and safety. Besides, if you're sleeping, you're not getting anything done anyway. So please do yourself and everyone else a favor and don't sleep in the lab. Regards, --Tom From ben.jian at arrayedfiberoptics.com Thu Aug 26 20:17:51 2004 From: ben.jian at arrayedfiberoptics.com (ben.jian) Date: Thu, 26 Aug 2004 20:17:51 Subject: Found Palm Pilot in gowning room Message-ID: <20040826201751.27064.qmail@server266.com> -------------- next part -------------- An HTML attachment was scrubbed... URL: From edmyers at stanford.edu Thu Aug 26 15:45:40 2004 From: edmyers at stanford.edu (Ed Myers) Date: Thu, 26 Aug 2004 15:45:40 -0700 Subject: AFM Demo by Pacific Nanotechnology Message-ID: <6.0.1.1.2.20040826152825.01af5e38@edmyers.pobox.stanford.edu> C:/DOCUME~1/EDMYER~1/LOCALS~1/Temp/msoclip1/01/clip_image002.jp Atomic Force Microscope Pacific Nanotechnology is sponsoring an all day forum with hands on demonstration on our Nano R. Wednesday Sept. 15th 2004 from 10-4 PM. Stanford University Nanofabrication Facility CIS Building Stanford, Ca 94305 Demonstration Room to be announced Agenda Applications of the Atomic Force Microscope to Nanotechnology---10:00-10:20am, Room CIS 101 Introduction to Pacific Nanotechnology, Inc. Products---- 10:20-10:40am, Room CIS 101 Live Instrument Demonstration of the Nano-R? Atomic Force Microscope--Please bring your sample-10:45-4:00pm If you are interested in attending this seminar, please RSVP to Ed Myers at 1-650-725-4702 or email Ed Myers at edmyers at stanford.edu Please confirm with Ed Myers if you would like to bring a sample. Depending on time, all samples may not get imaged. Note: If you do not wish to receive PNI newsletters, please email us at info at pacificnanotech.com with unsubscribe in the subject line. Nano-R? Atomic Force Microscope The Nano-R? is a general purpose atomic force microscope (AFM) for making routine images on structures with nanometer sized features. Because the Nano-R? can be used with two versions of image acquisition software, X'Pert? software and EZMode?, it is optimized for novices, casual users, and routine users. Further, the Nano-R? is supplied with the most commonly used AFM modes including contact, lateral force, material sensing, non-contact and close contact mode. The three primary subsystems of the Nano-R? AFM are the master computer, a control unit, and the Nano-R? stage. C:/DOCUME~1/EDMYER~1/LOCALS~1/Temp/msoclip1/01/clip_image003.jp Nano-R? Atomic Force Microscope Enlarged The Pacific Nanotechnology Nano-R? AFM sets a new standard in atomic force microscopy for nanotechnology, nanoscience and nanoinspection applications. It is designed to make the highest quality images and measurements of materials and structures with nanometer scale dimensions. The Nano-R? is ideal for both independent researchers and for research teams that want to share an AFM. -------------- next part -------------- A non-text attachment was scrubbed... Name: C:/DOCUME~1/EDMYER~1/LOCALS~1/Temp/msoclip1/01/clip_image002.jpg Type: image/jpeg Size: 6240 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: C:/DOCUME~1/EDMYER~1/LOCALS~1/Temp/msoclip1/01/clip_image003.jpg Type: image/jpeg Size: 12500 bytes Desc: not available URL: From altug at stanford.edu Fri Aug 27 14:42:30 2004 From: altug at stanford.edu (Hatice Altug) Date: Fri, 27 Aug 2004 14:42:30 -0700 Subject: black or crystal wax for KOH etch protection ? Message-ID: <00b301c48c7e$c155cc50$ee5540ab@hatice> Dear labmembers, I am trying to etch silicon substrate of SOI chip bonded to another chip in KOH (at 80C for ~7 hours). I have to protect the sides of silicon device layer from KOH etch (it causes damage and destroys bonding). I have been told to use "black wax " to protect it but some people also suggested to use "crystal wax" (not sure if it is called like this?). Does anybody have experience about how to use and clean black wax or crystal wax? Or can you suggest any other alternative technique for protection in KOH etch? Thanks for your help, -hatice -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at snf.stanford.edu Tue Aug 31 07:16:45 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Tue, 31 Aug 2004 07:16:45 -0700 Subject: A word from our sponsor... Message-ID: <4134884D.E0955CAF@snf.stanford.edu> Greetings labmembers -- Technology Ventures Corporation (TVC) is helping SNF with some PR. In exchange, TVC has asked us to announce their upcoming event (below) on this list. TVC has also very kindly offered two free registrations for students. If you're interested in seeing how VC's and startups network and are a full-time student or post-doc, please get in touch with me. Thanks for your attention -- Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu ************************************************************************* California Equity Capital Symposium September 16 & 17, 2004 ? San Francisco Airport Marriott Technology Ventures Corporation presents the Bay Area's premier event for those seeking promising new deals--the 2004 California Equity Capital Symposium. This year's event will be held at the San Francisco Airport Marriott, with an exciting lineup of technology companies. Thursday evening (Sept. 16th) will kick-off with a reception & networking dinner, featuring former California Governor and current Oakland Mayor, Jerry Brown. Friday (Sept. 17th) features a packed presentation agenda, including lunch and company exhibits. With nearly one-third of previous presenters receiving funding, serious early-stage investors will definitely want to attend this extraordinary event. Don?t pass up this chance to glimpse what the future holds for industries including biotechnology, medical devices, nanotechnology, alternative energy, enterprise software, and materials technology. Registration is open at the $295 early-bird rate until September 10th. To register for the 2004 California Equity Capital Symposium visit www.ca-ecs.org.If you have any questions, please call us at 925.960.1600. From mtang at snf.stanford.edu Tue Aug 31 11:41:46 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Tue, 31 Aug 2004 11:41:46 -0700 Subject: A word from our sponsor... References: <5.2.1.1.2.20040831084902.00ba3368@localhost> Message-ID: <4134C66A.12C87B94@snf.stanford.edu> Greetings labmembers -- Gosh, I had no idea there were so many entrepenuers in the student ranks! The response for free registrations has been overwhelming! I'm afraid that the registrations went to the first two people to respond, which they did within bare minutes of the posting (favoring, I'm afraid, the early birds or late night owls, as the case may be.) Thanks for your interest -- this lets us know that conferences like this are of interest, and so we can continue the practice.... Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From lyhwang at stanford.edu Tue Aug 31 15:50:17 2004 From: lyhwang at stanford.edu (Lisa Yoonjoo Hwang) Date: Tue, 31 Aug 2004 15:50:17 -0700 (PDT) Subject: Calibration standard for scanning probe microscope Message-ID: Hi, I'm a graduate student in Curt Frank's group in Chemical Engineering. I am in charge of maintaining and calibrating our DI Nanoscope AFMs. I was wondering if anyone has calibration standards we could borrow for a day or two. Specifically, we'd like to find high accuracy vertical calibration standards. We currently have vertical standards of SiO2 steps with +/- 1nm accuracy step heights, but we'd like to calibrate our scanners to even higher accuracy (down to angstroms) since we have features on the order of a few nanometers that we'd like to characterize. If you have standards we might be able to borrow (or advice or suggestions), please contact me at this email or at 650-723-9140 and it would be greatly appreciated! Thanks! Lisa Hwang