Eric Pop orals abstract

Maureen Rochford maureen at
Tue Aug 3 15:01:27 PDT 2004

>Stanford University Ph.D. Oral Examination
>Self-Heating and Scaling of Silicon Nano-Transistors
>Eric Pop
>Department of Electrical Engineering
>Packard 101
>Thursday, August 5, 2004
>1:30 PM - 2:30 PM
>(refreshments served at 1:15 PM)
>The most often cited technological roadblock of nanoscale electronics is
>the "power problem," i.e. power densities and device temperatures reaching
>levels that will prevent their reliable operation.  Current technology
>roadmap (ITRS) requirements are expected to lead to more heat dissipation
>problems, especially with the transition toward complex device geometries
>(SOI, FinFET) and new materials with poor thermal properties.
>This talk examines the physics of heat generation in silicon, and in the
>context of nanoscale CMOS transistors.  A new Monte Carlo code (MONET) is
>introduced which uses analytic descriptions of both the electron bands and
>the phonon dispersion.  Detailed heat generation statistics are computed
>in bulk and strained silicon, and within simple device geometries.  It is
>shown that non-stationary transport affects heat generation near strongly
>peaked electric fields, and that the generated phonons have non-uniform
>lifetimes, velocities and contributions to heat transport.
>In addition, the talk explores nano-transistor design and scaling from an
>electro-thermal point of view.  A compact thermal model for ultra-thin body
>(SOI, GOI) devices is described, using the most advanced understanding of
>nanoscale heat conduction available.  Self-heating is sensitive to several
>device parameters, e.g. raised source/drain height, and to boundary thermal
>resistance.  The analysis shows it is possible to optimize device geometry
>such as to simultaneously minimize operating temperature (better current,
>reliability) and intrinsic gate delay (higher speed).

Maureen E. Rochford
Stanford University
Center for Integrated Systems
420 Via Palou Mall
Stanford, CA 94305-4070

Phone: (650) 725-3627
Fax: (650) 725-0991


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