From mtang at snf.stanford.edu Thu Dec 2 07:09:23 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Thu, 2 Dec 2004 07:09:23 -0800 (PST) Subject: Nanosafe Workshop Message-ID: Greetings Labmembers -- I'm writing to you from Georgia Tech, where many of the SNF senior staff are attending a workshop on safety in nanotechnology ("Nanosafe".) We've just learned that this is being webcast live. If you are interested in viewing this, the URL is: http://130.207.156.195:1070 You will need Windows MediaPlayer to view this webcast. There may be drop outs due to breaks and at least one speaker presenting confidential information, but otherwise, the plan is to webcast the entire workshop. Enjoy! Mary From grupp at stanford.edu Thu Dec 2 13:35:05 2004 From: grupp at stanford.edu (Dan Grupp) Date: Thu, 2 Dec 2004 13:35:05 -0800 (PST) Subject: Robot demo NOW Message-ID: Honda's Asimo humanoid robot will be demo'd at 2:30 THursday (today) at Memorial Auditorium. http://www.stanford.edu/group/AIM/ASIMO.html http://asimo.honda.com/index.asp?bhcp=1 --------------------------------------------------------------------------- Dr. Daniel Grupp, Visiting Scholar Center for Integrated Systems Stanford University Stanford, CA 94305 (650) 724-6911 FAX: 723-4659 --------------------------------------------------------------------------- From cccatl at yahoo.com Thu Dec 2 13:53:27 2004 From: cccatl at yahoo.com (C C) Date: Thu, 2 Dec 2004 13:53:27 -0800 (PST) Subject: Frontside protection for KOH Etch Message-ID: <20041202215327.14208.qmail@web52108.mail.yahoo.com> All, We are trying to do a backside KOH etch with some small, thin surface micromachined structures on the front made of poly-Si, nitride, and oxide. We have a protective layer of nitride and gold on the frontside to protect the surface micromachined structures, but during the backside KOH etch, the KOH underetches the poly-Si (thru pinholes, presumably). Does anyone have any suggestions on this? Has anyone encoutered this problem before, and if so, how did you fix it? A thicker layer of nitride? A thicker layer of gold? A second layer of nitride? Any other ideas, besides just using nitride and gold? Thanks, -Chuck Chung From saraswat at cis.stanford.edu Fri Dec 3 09:46:50 2004 From: saraswat at cis.stanford.edu (saraswat) Date: Fri, 3 Dec 2004 09:46:50 -0800 Subject: Robot demo NOW In-Reply-To: References: Message-ID: <4FCB7B44-4553-11D9-8751-000A95A4F55E@cis.stanford.edu> If you missed it, there is a repeat demo today (Friday) at 2:30 pm and tomorrow at 11:30 am and 2 pm in the Memorial Auditorium. Krishna Saraswat Rickey/Nielsen Professor of Engineering Department of Electrical Engineering Stanford University, Allen CISX Rm 326, Stanford, CA 94305 Ph: (650)725-3610, Fax: (650) 723-4659 http://cis.stanford.edu/~saraswat/ Adm. Asst.: Irene Sweeney Ph: (650)725-3611 ----------------------------------------- On Dec 2, 2004, at 1:35 PM, Dan Grupp wrote: > Honda's Asimo humanoid robot will be demo'd at 2:30 THursday (today) at > Memorial Auditorium. > > http://www.stanford.edu/group/AIM/ASIMO.html > http://asimo.honda.com/index.asp?bhcp=1 > > ----------------------------------------------------------------------- > ---- > Dr. Daniel Grupp, Visiting Scholar > Center for Integrated Systems > Stanford University > Stanford, CA 94305 > (650) 724-6911 > FAX: 723-4659 > ----------------------------------------------------------------------- > ---- > From sandrew at stanford.edu Sun Dec 5 11:38:44 2004 From: sandrew at stanford.edu (Scott D. Andrews) Date: Sun, 5 Dec 2004 11:38:44 -0800 (PST) Subject: Reminder: University Oral Examination: Scott Andrews (Tuesday, December 7, 10:00AM) Message-ID: University Ph.D. Oral Examination Scott Andrews Department of Materials Science and Engineering Fabrication of Magnetic Nanopillars and X-ray Imaging of Spin-Transfer Phenomena Tuesday, December 7, 2004, 10:00 AM (Refreshments will be served at 9:45 AM) Center for Integrated Systems Annex (CISX), room 101 ABSTRACT Spintronics has generated much interest and research in recent years. Conventional technology uses the electron charge to store and transmit information. Novel devices with additional functionalities can be made using the quantum mechanical spin in addition to the electron charge. Potential spintronic applications include spin transistors, quantum computers, and magnetic random access memory (MRAM). Currently, giant magnetoresistance read heads, which transmit information using spin polarized currents, are used extensively in the magnetic storage industry. MRAM has started to impact the storage industry with its recent introduction to the consumer market. It is expected to compete with flash memory, and, to a lessor extent, dynamic random access memory (DRAM). MRAM does not deteriorate with use like flash but both are nonvolatile. MRAM's relatively fast speed will allow it to compete with DRAM in applications where information needs to be stored without a continuous power supply. Since MRAM and other spintronic applications are dependent on the interaction of spin polarized currents with magnetic materials, this phenomenon deserves further investigation in order to gain a more complete understanding. The main focus of this work is to investigate spin-transfer torque, a magnetic phenomenon in which spin polarized currents can be used to alter the magnetic state of a ferromagnet. This torque can be used as the dominant switching mechanism in systems where the current density is high. However, at low current densities, this effect is overpowered by the Oersted field, the classical magnetic field created by an electric current. Unlike the spin-transfer torque which is proportional to the current density, the Oersted field is proportional to the total current. Thus, for the spin-transfer torque to be dominant, small structures are necessary. In an attempt to meet the design criteria of samples that would carry high current density but low total current, holes were drilled with focused ion beam (FIB) into silicon nitride films and filled with a stack of two ferromagnets separated by a nonmagnetic spacer. These samples were analyzed using x-ray photoemission electron microspectroscopy (X-PEEM). Due to magnetic uniformity issues in these samples, two other structures were subsequently investigated. One uses a stencil method that allows easy variations of the exact materials chosen. However, this sample design has the disadvantage that the magnetic material that should be switched using the spin polarized currents is not localized to the pillar structure being tested. This creates extraneous GMR signals during electrical measurements. Another sample, which was fabricated with the help of Hitachi, was designed to isolate the magnetic materials to a small region and does not show the convolved signal during electrical measurements. Both of these samples were analyzed with a scanning transmission x-ray microscope (STXM). Using a pump-probe configuration, the time dependent effects of the spin-torque transfer were examined. In the last sample, spin-transfer torque, combined with conventional Oersted switching, was observed and analyzed. Such a direct observation of spin injection and its time characteristics has never been achieved previously. From das_john at hotmail.com Mon Dec 6 12:42:17 2004 From: das_john at hotmail.com (John Das) Date: Mon, 06 Dec 2004 12:42:17 -0800 Subject: KOH etch protection coating materials In-Reply-To: Message-ID: An HTML attachment was scrubbed... URL: From mtang at snf.stanford.edu Mon Dec 6 13:46:23 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Mon, 06 Dec 2004 13:46:23 -0800 Subject: Important: No changing acids for two hours! Message-ID: <41B4D32F.1080607@snf.stanford.edu> Labmembers -- The Acid Waste Neutralization system has run out of sodium hydroxide to neutralize acid waste. Please DO NOT dump any acid pots (Piranha/Sulfuric or HCl or metal etch). Spin rinse dryers, dump rinsers, HF drains, and DI water guns are OK. KOH and TMAH, as they are strong bases, may be aspirated. This situation is expected to last no more than two hours. Everyone will be notified as soon as we return to normal operating conditions. Thanks, SNF -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at snf.stanford.edu Mon Dec 6 13:50:33 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Mon, 06 Dec 2004 13:50:33 -0800 Subject: Humidity temporarily out of control Message-ID: <41B4D429.1060408@snf.stanford.edu> Labmembers: We've just lost control over the humidity in the litho area. We expect to regain control in 30 minutes or so, but it may be a bit longer before things stabilize. Sigh... a day for problems... Your friendly, neighbborhood SNF Staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at snf.stanford.edu Mon Dec 6 14:37:58 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Mon, 06 Dec 2004 14:37:58 -0800 Subject: Acid and Humidity Update: We're Back!!! Message-ID: <41B4DF46.2080903@snf.stanford.edu> Thanks to Jose and the other Facilities folk, we're back on-line for acid treatment AND humidity control! So process away! SNF -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From rcrane at snf.stanford.edu Tue Dec 7 09:06:26 2004 From: rcrane at snf.stanford.edu (Dick Crane) Date: Tue, 07 Dec 2004 09:06:26 -0800 Subject: Fab Temperature Control is Down Message-ID: <41B5E312.3B9AB4E0@snf.stanford.edu> Fab users, Tuesday, 12/7, 0900 Processing Alert The fab air will be a few degrees below normal temperature until 1000. This can affect photoresist performance. A water pump failed and is being replaced System should be back up by 1000. Thanks, Dick From rcrane at snf.stanford.edu Wed Dec 8 14:05:55 2004 From: rcrane at snf.stanford.edu (Dick Crane) Date: Wed, 08 Dec 2004 14:05:55 -0800 Subject: Holiday shut down details Message-ID: <41B77AC3.9C9F05D@snf.stanford.edu> Happy Holiday Break, We are approaching the Holiday shutdown, Stanford University will be closing down for two weeks, building maintenance will be performed and it is time for the SNF annual equipment maintenance marathon. CIS & CISX buildings: CIS and CISX buildings will be officially closed for the 12/17/04-1/3/05 holiday break. There will be no heating, janitorial services, staff services, mail and package delivery services, and the building will be locked. The CIS receiving area is not available for parking. Any vehicles locked in will need to be recovered through police services or left overnight. Please don't park there. A, C, and Z parking lot permit enforcement will be suspended during the break (fire zone and handicap areas excluded). Special notes: CISX wet bench exhaust system will be down Monday, 12/20, from 0630 through 1600. CISX elevator will not be available for use from Monday, 12/20, 0700, through Thursday, 12/30, 1600. Stanford Nanofabrication Facility: The SNF fab will close at 0700 on Friday, December 17. All users need to be out of the fab by then. Please remove any personal belongings that are not already stored in your personal lab bins. This means any wafers, wafer boxes, labware, etc. that you may keep in WIP storage or labware storage shelves. This also includes any other personal belongings that may be sitting on top of personal bins (masks, notebooks, etc.). Staff and outside contractors will be working in the fab during the shutdown. The fab reopens for use at 1600 on Monday, January 3. Staff will be requalifying equipment during the day and we will have 80-90% of the tools ready for use by 1600. Watch for tool status on Coral. Thanks, Dick -------------- next part -------------- An HTML attachment was scrubbed... URL: From mdeal at stanford.edu Fri Dec 10 07:54:16 2004 From: mdeal at stanford.edu (Michael Deal) Date: Fri, 10 Dec 2004 07:54:16 -0800 Subject: processing policies in SNF for SCT metals and Ge (corrected subject line) Message-ID: <6.1.1.1.2.20041210075202.01f38ea8@mdeal.pobox.stanford.edu> Labmembers, The SNF Special Materials (Specmat) committee has decided on some new policies regarding the processing of two types of materials: 1. metals deposited in the new SCT sputter deposition system, and 2. Ge wafers or Si wafers with Ge thin film layers. Below are the policies regarding them. If you have any questions, please email specmat at snf.stanford.edu. Thanks. Processing of Semiclean B materials The following materials will be deposited in the new SCT sputter deposition system: Ni, Co, Pt, Al, Hf, Ta, Mo, W, Ti, Cr, Zr The SCT system is Au-free. While there has been some concern with these metals in regards to contamination of MOS devices, these materials are currently being successfully used in industrial MOS processes in gate dielectrics, gate electrodes, and contacts. Based on input from labmembers, industrial collaborators, literature investigations, as well as previous experience with some of these materials, the specmat committee has decided on the following modified equipment-class policy: 1. All metals from SCT will be classified as semiclean B. 2. Al, Ti, and W deposited in the Gryphon will be classified as semiclean A. 3. All metals from Innotec and Metallica are still gold ?contaminated. - Semiclean A class wafers will be treated the same as the old semiclean class. - Semiclean B class wafers (i.e. those deposited in the SCT system) can be processed in all semiclean equipment (i.e. tylanbpsg, tylanfga, etc.) as well as the litho equipment, with the following IMPORTANT restrictions: a. Semiclean B class wafers can only be cleaned or wet-etched at wbgeneral in dedicated clean beakers. b. Dry-etching of these films will be allowed on a case-by-case basis. (Etching oxide down to these SCT metals will be allowed in oxide etchers in the semiclean equipment set, ie. AMTetcher and P5000.) c. When annealing semiclean B class wafers in the AG4108 RTA, the silicide tray must be used, which from now on will be referred to as the "semiclean tray". (Once the AG4100 comes on line, it will be classified as a semiclean tool and will be used for all semiclean materials including SCT metals and Ge. The AG4108 will be dedicated to clean materials only.) d. Semiclean B materials (as with semiclean A materials) should use the metal-side of tylanfga. Processing of germanium (Ge) Although Ge is not a contamination problem in Si, because of limited knowledge regarding Ge cleaning, Ge wafers will be classified as a semiclean B material. Therefore: - Ge wafers can be processed in all semiclean equipment (i.e. tylanbpsg, tylanfga, etc.) as well as the litho equipment, with the following IMPORTANT restrictions: 1. Ge wafers can only be cleaned or wet-etched at wbgeneral in dedicated clean beakers. 2. When using the AG4108 RTA, the silicide tray must be used, which from now on will be referred to as the "semiclean tray". (When the AG4100 becomes available, all Ge and other semiclean processing will be done in the AG4100.) The specmat committee will conduct further experiments and monitoring to ensure that other labmembers? projects remain unaffected by the use of these materials and to possibly allow some or all of these restrictions to be modified or removed in the future. -------------- next part -------------- An HTML attachment was scrubbed... URL: From jerabek at snf.stanford.edu Fri Dec 10 09:31:13 2004 From: jerabek at snf.stanford.edu (Paul Jerabek) Date: Fri, 10 Dec 2004 09:31:13 -0800 (PST) Subject: Micronic shutdown Message-ID: To whom it may concern Micronic mask writer has been shutdown due to unstable stage hight tracking. Micronic service has been notified and will address the problem. -Paul From jwc at snf.stanford.edu Fri Dec 10 11:43:07 2004 From: jwc at snf.stanford.edu (James Conway) Date: Fri, 10 Dec 2004 11:43:07 -0800 Subject: Announcement: Ebeam Lab moves to Class 100 Cleanroom protocols starting January 3, 2005 Message-ID: <41B9FC4B.1090906@snf.stanford.edu> Greetings Ebeam Lab Users and SNF Lab Members: Starting January 3, 2005 we will be upgrading the Ebeam Lab area to strict Class 100 cleanroom protocols. From that date forward all entrees into the Ebeam Lab will be through the main SNF Cleanroom entryway and then accessing the Ebeam Lab through the door from the Lithography area. You must following all standard gowning and glove procedures for the main SNF cleanroom area. There will not be access through either of the two hallway doors into the Ebeam Lab other than for emergency egress. The Ebeam Lab will henceforth become a restricted area within the SNF Cleanroom. Access to this lab will be open to qualified Electron Beam Tool Users only unless escorted by a qualified User or SNF staff member. This change is being made to improve the quality of all work performed in the Lab and to meet the needs for projects which must maintain clean contamination level. All Users will benefit from this change with improvement to the quality of their processing results. All Lab Members are requested to support this change and make this transition complete as we move into the New Year. Reply's to beamtools at snf.stanford.edu discussion list please. Thank you for your support! James Conway Paul Jerabek Ebeam Technology Group Stanford Nanofabrication Facility 650-725-7075 From mbaran at stanford.edu Fri Dec 10 15:39:37 2004 From: mbaran at stanford.edu (Maureen Baran) Date: Fri, 10 Dec 2004 15:39:37 -0800 Subject: CIS Holiday Party Thursday, December 16th @ 2:00 PM in the Hallway Message-ID: <200412102339.iBANdcgT002088@smtp2.Stanford.EDU> Our building holiday party will be on Thursday, December 16th at 2:00 PM to? It will be located on the first floor outside the lab in the hallway (our usual spot). Please come and enjoy snacks, sodas, games and lively conversation with the SNF staff, the rest of the staff in the building, and all the other labmembers. All that we ask you to bring is your holiday spirit and your sense of adventure. Maureen Maureen Baran Stanford Nanofabrication Facility Lab Services Administrator mbaran at stanford.edu 650-725-3664 -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at snf.stanford.edu Tue Dec 14 15:15:41 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Tue, 14 Dec 2004 15:15:41 -0800 Subject: Please help: unknown bag Message-ID: <41BF741D.3010604@snf.stanford.edu> Hi all -- Last night, someone left a hazardous waste bag containing what appears to be a small bundle of wipes. The bag isn't labeled. Could the generator (or some other person in-the-know) please make up the appropriate label? The bag is in the chemical pass through area, in the hazardous waste disposal area. Thanks! Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at snf.stanford.edu Wed Dec 15 07:24:40 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Wed, 15 Dec 2004 07:24:40 -0800 Subject: Reminder: Remove Materials before Lab Shutdown Message-ID: <41C05738.30508@snf.stanford.edu> Greetings everyone! Just a reminder that the annual lab shutdown is scheduled to start at 7 am on Friday, Dec. 17. Please remove any personal belongings that are not already stored in your personal lab bins. This means any wafers, wafer boxes, labware, etc. that you may keep in WIP storage or labware storage shelves. This also includes any other personal belongings that may be sitting on top of personal bins (masks, notebooks, etc.) And please remove anything that is of great value to you. There will be a lot of facilities and maintenance work done in the lab, so most every available surface will be covered and there will be a lot of contractors who may be moving things around. We will make every effort to ensure care is taken, but we cannot be responsible for damage or loss of personal items. Thanks for your attention, Your friendly, neighborhood SNF staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From uchidak at stanford.edu Wed Dec 15 10:02:18 2004 From: uchidak at stanford.edu (Ken UCHIDA) Date: Wed, 15 Dec 2004 10:02:18 -0800 Subject: =?iso-2022-jp?B?U2VtaW5hciBieSBUT1NISUJBIFJlc2VhcmNoZXJzGyRCISEbKEI=?= =?iso-2022-jp?B?KEhpZ2gtaywgU3RyYWluZWQgU2ksIE5ldyBBcmNoaXRlY2h0dXJlIERl?= =?iso-2022-jp?B?dmljZSk=?= Message-ID: <000001c4e2ea$21ab8510$ca14970a@UCHIDA> Following Seminars by TOSHIBA researchers will be given on Dec 16. Presentations are based on their IEDM2004 presentations. Date: Dec 16 Time: 10am-12pm Place: CISX338 ##### Impact of Hf Concentration on Performance and Reliability for HfSiON-CMOSFETT T. Watanabe Discuss Hf concentration dependence of HfSiON on both performance and reliability for hp45 nm node ##### Impact of Parasitic Resistance and Silicon Layer Thickness Scaling for Strained Silicon MOSFETs on Relaxed Si1-xGex Virtual Substrate H. Kawasaki Discuss strained Si layer thickness dependence on device performance ##### Mobility Improvement for 45nm Node by Combination of Optimized Stress Control and Channel Orientation Design T. Komoda Discuss high performance MOSFET technology for 45nm node ##### Low Power Logic Circuit and SRAM Cell Applications with Silicon on DepletionLayer(SODEL CMOS) Technology S.Inaba (recent CICC paper) Discuss new device structure (pseud SOI) for low power application From uchidak at stanford.edu Thu Dec 16 08:17:32 2004 From: uchidak at stanford.edu (Ken Uchida) Date: Thu, 16 Dec 2004 08:17:32 -0800 Subject: TODAY 10am @CISX338: Seminar by TOSHIBA =?UTF-8?Q?Researchers=E3=80=80=28High-k=2C?= Strained Si, New Architechture Device) In-Reply-To: <000001c4e2ea$21ab8510$ca14970a@UCHIDA> References: <000001c4e2ea$21ab8510$ca14970a@UCHIDA> Message-ID: <1103213852.5151.3.camel@uchidak.stanford.edu> Everyone is welcome. Please join and discuss TOSHIBA technologies. On Wed, 2004-12-15 at 10:02 -0800, Ken UCHIDA wrote: > Following Seminars by TOSHIBA researchers will be > given on Dec 16. > > Presentations are based on their IEDM2004 presentations. > > Date: Dec 16 > Time: 10am-12pm > Place: CISX338 > > ##### > > Impact of Hf Concentration on Performance and Reliability for > HfSiON-CMOSFETT > > T. Watanabe > > Discuss Hf concentration dependence of HfSiON on both performance > and reliability for hp45 nm node > > ##### > Impact of Parasitic Resistance and Silicon Layer Thickness Scaling for > Strained Silicon MOSFETs on Relaxed Si1-xGex Virtual Substrate > > H. Kawasaki > > Discuss strained Si layer thickness dependence on device performance > > ##### > Mobility Improvement for 45nm Node by Combination of Optimized Stress > Control and Channel Orientation Design > > T. Komoda > > Discuss high performance MOSFET technology for 45nm node > > ##### > Low Power Logic Circuit and SRAM Cell Applications with Silicon on > DepletionLayer(SODEL CMOS) Technology > > S.Inaba (recent CICC paper) > > Discuss new device structure (pseud SOI) for low power application > -- Ken Uchida From mtang at snf.stanford.edu Thu Dec 16 11:10:41 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Thu, 16 Dec 2004 11:10:41 -0800 Subject: Remove your stuff! Message-ID: <41C1DDB1.2060807@snf.stanford.edu> Hi everyone -- Considering that the lab is shutdown tomorrow, starting at 7 am, and it's 11 am now... there seems to be an awful LOT OF PERSONAL STUFF that is outside of lab bins. Please understand that because of the work being done, we have to remove everything that is not in lab bins from the lab. We will try to be conscientions, but I'm afraid we cannot be responsible for lost or missing items. Enough of my whining... Happy holidays! Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From kychen51 at yahoo.com Thu Dec 16 13:42:50 2004 From: kychen51 at yahoo.com (Kenneth Chen) Date: Thu, 16 Dec 2004 13:42:50 -0800 (PST) Subject: postdoc opening at UCSC/NASA (nanoelectronics) Message-ID: <20041216214251.41157.qmail@web54605.mail.yahoo.com> University of California, Santa Cruz University Affiliated Research Center (UARC) Postdoctoral Scholar at NASA Ames Research Center for Nanotechnology (NACNT) (Nanoelectronics) The UARC's Center http://uarc.ucsc.edu/ for Nanotechnology, http://www.ipt.arc.nasa.gov/ NASA Ames Research Center (NACNT) has an opening for a postdoctoral fellowship in the field of nanoelectronics. The post-doc researcher will work closely with the scientists to explore the strategically important nanotechnology for computing and information storage to meet NASA's aggressive goal for space exploration. The specific task includes 1) synthesis and materials characterization of inorganic 1-D nanostructures, and 2) design, fabrication, and physics understanding of the innovative prototype devices for various applications. The target of the research effort is to lay the technical base for next generation electronics. Scientific publication would be highly demanded in the task (two required as deliverable per year). The experiment work for this position will be performed at NASA Ames Research Center, Stanford Nanofabrication Facility and advanced materials research lab in Stanford University. RANK: Postdoctoral Scholar SALARY: $45,048 - $50,472 MINIMUM QUALIFICATIONS: Ph.D. in Materials Science and Engineering, Chemistry, Chemical Engineering, Electrical Engineering, or other related fields. Strong track record of research in: nanowire synthesis, nanomaterials science/engineering, or nanoelectronic devices. Experience in cleaning-room and solid knowledge in inorganic semiconductors, general material characterization techniques, and semiconductor device physics is required. TERM OF APPOINTMENT: Two years contingent on performance and availability of funding. APPLY TO: Applicants should send a vita, publication list, brief summary of relevant research experience, brief statement of research interests, and the names of three referees. Sherrie Smith University Affiliated Research Center NASA Research Park Building 19, P.O. Box 7 Moffett Field, CA 94035 e-mail: sherrie.smith at adm.ucsc.edu CLOSING DATE: Open until filled. UCSC IS AN AFFIRMATIVE ACTION/EQUAL EMPLOYMENT OPPORTUNITY EMPLOYER WOMEN AND MINORITIES ARE ENCOURAGED TO APPLY Inquiries regarding the University's equal employment opportunity policies may be directed to: Equal Employment Opportunity/ Affirmative Action Office at, University of California, Santa Cruz, CA 95064; (831) 459-2686. Under Federal law, the University of California may employ only individuals who are legally able to work in the United States as established by providing documents as specified in the Immigration Reform and Control Act of 1986. If you need assistance due to a disability please contact the Academic Human Resources Office at 350 McHenry Library (831) 459-4300. This position description is available in alternate formats, which may be requested from Academic Human Resources at (831) 459-4300. VISIT THE AHR WEB SITE AT http://www2.ucsc.edu/ahr/employment/ 12/2/04 __________________________________ Do you Yahoo!? Yahoo! Mail - Helps protect you from nasty viruses. http://promotions.yahoo.com/new_mail