From edwardsj at stanford.edu Mon Jan 5 11:35:21 2004 From: edwardsj at stanford.edu (Jane Edwards) Date: Mon, 5 Jan 2004 11:35:21 -0800 Subject: Len Booth Retirement Message-ID: <002101c3d3c3$0ef226e0$236540ab@AVANDEL> As many of you already know, Len Booth will be retiring after many years of excellent service to SNF and Stanford University. Please join us at 2pm on Tuesday, Jan. 6 in front of the SNF office area to wish him well and thank him for his many contributions. Thanks, The SNF Staff -------------- next part -------------- An HTML attachment was scrubbed... URL: From rcrane at snf.stanford.edu Mon Jan 5 16:56:09 2004 From: rcrane at snf.stanford.edu (Dick Crane) Date: Mon, 05 Jan 2004 16:56:09 -0800 Subject: The fab is open for use Message-ID: <3FFA07A9.2E10DE06@snf.stanford.edu> Labmembers, Happy New Year and welcome back. The fab is officially open to users as of 4:00 PM today, Monday, 1/5/04. We are about 80% operational at this time. Please check coral or the SNF website for individual tool status. Thanks, Dick Crane From mtang at snf.stanford.edu Thu Jan 8 07:33:48 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Thu, 08 Jan 2004 07:33:48 -0800 Subject: Free stuff... Message-ID: <3FFD785C.EAF90A56@snf.stanford.edu> Hi all -- Intel very kindly donated a pallet full of wafer carriers of various sorts. We've put the chip and 6" wafer (some day!!!) carriers into storage, but don't see a near term need for the 8" carriers. If anyone can use them, they are yours for the taking. The pallet is located in the hallway just outside of the SNF Stockroom/Shipping & Receiving area. (And if you don't have 8" wafers that requiring storing or processing, these single 8" wafer holders ought to have some other household use: picture frame? displaying your antique china plate or vinyl record? single serving pizza box?) Anything left by 1/15/04 will be disposed of. Mary -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at snf.stanford.edu Thu Jan 8 11:46:53 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Thu, 08 Jan 2004 11:46:53 -0800 Subject: EE410: heads up! Message-ID: <3FFDB3AD.736CD405@snf.stanford.edu> Hi all -- Just wanted to let you know that EE410 will commence next week in SNF. For new labmembers, this is a very challenging and interesting class in which the students fabricate, model, and test a CMOS device (for more info, check out the class website at: http://www.stanford.edu/class/ee410). The schedule for processing this device is aggressive -- and we ask for your patience over the next 8 weeks as priorities and equipment access may be shifted in order to allow full support for this class. You may even some wide-eyed and possibly scared looking students in the lab, who are learning and doing some of their own processing during their lab sessions. These labs are scheduled weekly for Tuesday PM, Wednesday PM, and Thursday AM and PM. If you have any questions about EE410, please contact Gladys (the lead coordinator for the lab portion of this class) or Maurice (her right-hand, or should I say, "left-hand" man, in this endeavor.) Thanks for your attention -- The SNF Staff -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From edwardsj at stanford.edu Thu Jan 8 15:47:40 2004 From: edwardsj at stanford.edu (Jane Edwards) Date: Thu, 8 Jan 2004 15:47:40 -0800 Subject: REMINDER: CIS/SNF 2004 New Years Celebration-FRIDAY JANUARY 9 Message-ID: <000001c3d641$cde94120$236540ab@AVANDEL> Happy New Year from the CIS and SNF Staff. Please join us for a CIS/SNF 2004 New Years Celebration. Friday, January 9, 2004 at 2pm in the CIS Lobby FOOD!!!! GAMES!!!! PRIZES!!!! See you then, Yoshio Nishi Richard Dasher -------------- next part -------------- An HTML attachment was scrubbed... URL: From hsubkim at stanford.edu Thu Jan 15 10:48:31 2004 From: hsubkim at stanford.edu (Hyoungsub Kim) Date: Thu, 15 Jan 2004 10:48:31 -0800 Subject: University Oral Examination - Hyoungsub Kim (Jan. 26, 10AM) Message-ID: <008901c3db98$2c156f20$126b40ab@Hyoungsub> University Oral Examination Hyoungsub Kim Department of Materials Science and Engineering Monday, January 26, 2003 10:00AM (Refreshments will be served at 9:45AM) CIS-X Auditorium Stanford University Nano-scale zirconia and hafnia grown by atomic layer deposition: crystallinity, interface structures and electrical properties With the continued scaling of high speed transistors, leakage current densities across the SiO2 gate dielectric have increased enormously through direct tunneling. Presently, metal oxides having higher dielectric constants than SiO2 are being investigated to reduce the leakage current by increasing the physical thickness of the dielectric. Among the materials most widely investigated are ZrO2 and HfO2. Many possible techniques exist for depositing high-k gate dielectrics. Atomic layer deposition (ALD) has drawn attention as a method for preparing ultrathin metal oxide layers with excellent electrical characteristics and near-perfect film conformality due to the layer-by-layer nature of the deposition mechanism. For this research, an ALD system using ZrCl4/HfCl4 and H2O was built and optimized. The microstructural and electrical properties of ALD-ZrO2 and HfO2 grown on SiO2/Si substrates were investigated and compared using various characterization tools. In particular, the crystallization kinetics of amorphous ALD-HfO2 films were studied using in-situ annealing experiments in a TEM. The effect of crystallization on the electrical properties of ALD-HfO2 was also investigated using various in-situ and ex-situ post-deposition anneals. Our results revealed that crystallization had little effect on the magnitude of the gate leakage current or on the conduction mechanisms. Building upon the results for each metal oxide separately, more advanced investigations were made. Several nanolaminate structures using ZrO2 and HfO2 with different sequences and layer thicknesses were characterized. The effects of the starting microstructure on the microstructural evolution of nanolaminate stacks were studied. Additionally a promising new approach for engineering the thickness of the SiO2-based interface layer between the metal oxide and silicon substrate after deposition of the metal oxide layer was suggested. Through experimental measurements and thermodynamic analysis, it is shown that a Ti overlayer, which exhibits a very high oxygen solubility, can effectively getter oxygen from the interface layer, thus decomposing SiO2 and reducing the interface layer thickness in a controllable fashion. As one of several possible applications, ALD-ZrO2 and HfO2 gate dielectric films were deposited on Ge (001) substrates with different surface passivations. After extensive characterization using various microstructural, electrical and chemical analyses, excellent MOS electrical properties of high-k gate dielectrics on Ge were successfully demonstrated with optimized surface nitridation of the Ge substrates. ================================ Hyoungsub Kim Ph.D Candidate Department of Materials Science & Engineering Stanford University Room 203, McCullough Bldg. 476 Lomita Mall Stanford, CA 94305-4045 Ph: 650-725-2616 (office) Fax: 650-736-1984 -------------- next part -------------- A non-text attachment was scrubbed... Name: Abstract_Hyoungsub Kim.pdf Type: application/pdf Size: 82269 bytes Desc: not available URL: From aageraci at stanford.edu Thu Jan 15 17:59:00 2004 From: aageraci at stanford.edu (Andrew Albert Geraci) Date: Thu, 15 Jan 2004 17:59:00 -0800 (PST) Subject: micropipette Message-ID: Dear Labmembers, Today I had a piece of glass micro-pipette embedded in my fingertip that I'm pretty sure was on the floor of the CAD room. If anyone was recently using/transporting micropipettes through there and might know if any chemicals or biological agents could have been on them I'd really appreciate it if you could send me an email. Thanks for any help, Andy Geraci From damaids at stanford.edu Fri Jan 16 08:57:43 2004 From: damaids at stanford.edu (Dan Maidenberg) Date: Fri, 16 Jan 2004 08:57:43 -0800 Subject: Oral Examination: Dan Maidenberg, January 22nd (2:00 PM) Message-ID: <19EE19A0-4845-11D8-8D56-000A95BA957E@stanford.edu> (I apologize to those of you who receive this email more than once) ----------------------------------- University Oral Examination Dan Maidenberg The Effect of Porosity and the Pore Templating Process on Adhesion of Nanoporous Glass Films January 22nd, 2004, 2:00 PM (Refreshments served at 1:40 PM) Cypress Auditorium, Paul Allen Center for Integrated Systems (CIS 101X) Stanford University The fabrication of thin films with controlled, nanometer-scale porosity has been studied for a variety of engineering solutions, from low-k dielectric films to biological sensor applications. The introduction of nanopores into these films, especially the silica-based glasses which are the most common matrix materials, will have profound effects on their mechanical properties. The principal objective of this study is to investigate the adhesive behavior of nanoporous glasses and the effects of nanoporosity, the pore-creating process, and the interaction of the matrix materials with the sacrificial pore-generating molecules (porogens). The distribution and architecture of the pores and residue from the porogen molecules were found to significantly alter the adhesion energies at selected interfaces. In nanoporous systems with high porogen efficiency, i.e. the ratio of pore volume in the cured film to the fraction of porogen in the precursor solution, the adhesion was found to decrease monotonically with increasing porosity, as expected. However, in porogen systems with reduced efficiency, anomalous adhesion behavior was measured at both the free surface (subsequently capped) and the substrate interface. At the top of the glass film, adhesion behavior was found to be insensitive to porosity, approximately 2.5 J/m^2 for all specimens, from 0 to 50% porosity. This was shown to be caused by a pore-free depletion zone that forms in the top 5-10 nm of the nanoporous glass. These local density fluctuations were examined using specular x-ray reflectivity, and were shown to vary depending on the porogen system. Remarkable toughening behavior was demonstrated at the substrate interface, with adhesion energies steeply rising with increasing porosity to over 20 J/m^2 at 50%. This toughening effect was activated by residual porogen molecules functioning as molecular bridging elements across the substrate-glass interface. Classical bridging models were adapted to the molecular length scale and were successfully utilized to predict the increased adhesion. -------------- next part -------------- A non-text attachment was scrubbed... Name: Abstract_Maidenberg.pdf Type: application/pdf Size: 39244 bytes Desc: not available URL: -------------- next part -------------- ---------------------- Dan Maidenberg Department of Materials Science and Engineering Stanford University damaids at stanford.edu (650) 725-2634 From volkan at stanford.edu Fri Jan 16 11:59:41 2004 From: volkan at stanford.edu (Hilmi Volkan Demir) Date: Fri, 16 Jan 2004 11:59:41 -0800 Subject: H. Volkan Demir thesis defense, Friday 23 Jan, 3:15pm in AP200 Message-ID: <5.1.1.5.2.20040116115819.036cd8b8@volkan.pobox.stanford.edu> University Ph.D. Oral Examination Multifunctional Photonic Switches Hilmi Volkan Demir volkan at stanford.edu Department of Electrical Engineering Stanford University E. L. Ginzton Laboratory, AP200 Friday, January 23, 2004 3:30 PM - 4:30 PM (Refreshments served at 3:15 PM) Traditional optical-electronic-optical (o-e-o) conversion in current optical networks requires propagating high-speed electrical signals and cascading discrete electronic and optoelectronic devices, resulting in increased cost, size, power consumption, and heat dissipation. For o-e-o conversion without the use of conventional electronics, we introduce a novel, chip-scale, photonic switching architecture that avoids the difficulties of ordinary o-e-o conversion. These photonic switches intimately integrate quantum-well modulators with photodetectors that directly drive the modulators in their vicinity. Such switches simultaneously offer multiple network functions including unconstrained wavelength conversion and multi-wavelength broadcasting (in a wavelength-division-multiplexed system), multi-channel signal restoration (in an optical regenerator), spatial routing (in an optical router), and high-density switching (in an optical backplane). This talk will present different implementations of our high-speed, low-power photonic switches along with a theoretical framework of their underlying physics and experimental characterization. The talk will also introduce the first wavelength-converting optical crossbar switch that incorporates a two-dimensional array of such photonic switches on a single chip. In the talk, the experimental demonstrations including a 50 GHz burst logic clock operation in the range of 850 nm, and unlimited wavelength conversion across 45 nm and multi-channel broadcasting over 20 nm spanning the telecommunication center band (1530 nm - 1565 nm) will be presented. The theoretical investigations that predict optical switching bandwidths exceeding 40 GHz will be shown. _______________________________________________________________________ Hilmi Volkan DEMIR volkan at stanford.edu http://www.stanford.edu/~volkan Electrical Engineering Department Solid State & Photonics Lab Stanford University Ginzton Lab AP-227 Stanford, CA 94305 (650) 725-2291 (office) (650) 248-4284 (cell) _______________________________________________________________________ -------------- next part -------------- An HTML attachment was scrubbed... URL: From damaids at stanford.edu Wed Jan 21 08:47:20 2004 From: damaids at stanford.edu (Dan Maidenberg) Date: Wed, 21 Jan 2004 08:47:20 -0800 Subject: REMINDER: Oral Examination: Dan Maidenberg, January 22nd (2:00 PM) Message-ID: <7A882455-4C31-11D8-8C95-000A95BA957E@stanford.edu> (I apologize to those of you who receive this email more than once) ----------------------------------- University Oral Examination Dan Maidenberg The Effect of Porosity and the Pore Templating Process on Adhesion of Nanoporous Glass Films January 22nd, 2004, 2:00 PM (Refreshments served at 1:40 PM) Cypress Auditorium, Paul Allen Center for Integrated Systems (CIS 101X) Stanford University The fabrication of thin films with controlled, nanometer-scale porosity has been studied for a variety of engineering solutions, from low-k dielectric films to biological sensor applications. The introduction of nanopores into these films, especially the silica-based glasses which are the most common matrix materials, will have profound effects on their mechanical properties. The principal objective of this study is to investigate the adhesive behavior of nanoporous glasses and the effects of nanoporosity, the pore-creating process, and the interaction of the matrix materials with the sacrificial pore-generating molecules (porogens). The distribution and architecture of the pores and residue from the porogen molecules were found to significantly alter the adhesion energies at selected interfaces. In nanoporous systems with high porogen efficiency, i.e. the ratio of pore volume in the cured film to the fraction of porogen in the precursor solution, the adhesion was found to decrease monotonically with increasing porosity, as expected. However, in porogen systems with reduced efficiency, anomalous adhesion behavior was measured at both the free surface (subsequently capped) and the substrate interface. At the top of the glass film, adhesion behavior was found to be insensitive to porosity, approximately 2.5 J/m^2 for all specimens, from 0 to 50% porosity. This was shown to be caused by a pore-free depletion zone that forms in the top 5-10 nm of the nanoporous glass. These local density fluctuations were examined using specular x-ray reflectivity, and were shown to vary depending on the porogen system. Remarkable toughening behavior was demonstrated at the substrate interface, with adhesion energies steeply rising with increasing porosity to over 20 J/m^2 at 50%. This toughening effect was activated by residual porogen molecules functioning as molecular bridging elements across the substrate-glass interface. Classical bridging models were adapted to the molecular length scale and were successfully utilized to predict the increased adhesion. -------------- next part -------------- A non-text attachment was scrubbed... Name: Abstract_Maidenberg.pdf Type: application/pdf Size: 39244 bytes Desc: not available URL: -------------- next part -------------- ---------------------- Dan Maidenberg Department of Materials Science and Engineering Stanford University damaids at stanford.edu (650) 725-2634 From mcvittie at snf.stanford.edu Wed Jan 21 13:36:23 2004 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Wed, 21 Jan 2004 13:36:23 -0800 Subject: Help Needed for Starting up Surfscan 6200 Message-ID: <400EF0D7.F6E1B943@snf.stanford.edu> Lab Users, In December we got a donation of the a Tencor Surfscan 6200 from Intel. This tool measures surface particles on wafers and wafer roughness. I have the tool all setup and ready for startup. I looking to see if any of our users are familar this tool and can help me with the start up. If you want to look at the tool, it is in the mask masking room in the litho area. Thanks, Jim McVittie -------------- next part -------------- A non-text attachment was scrubbed... Name: mcvittie.vcf Type: text/x-vcard Size: 422 bytes Desc: Card for Jim McVittie URL: From mahnaz at snf.stanford.edu Thu Jan 22 14:43:15 2004 From: mahnaz at snf.stanford.edu (Mahnaz Mansourpour) Date: Thu, 22 Jan 2004 14:43:15 -0800 Subject: Yes oven Message-ID: <40105203.E470266@snf.stanford.edu> Hello all, I just like to let you all know that the system will be down till next week Thursday. The pump has gone out to get fixed and needs 5 working days and the back up pump did not behave well either. Mario tells me that our main pump should be back by next week. So back to using SINGE oven for half an hour and using the track or manual dispensing of HMDS. cheers mahnaz From mtang at snf.stanford.edu Fri Jan 23 11:29:14 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Fri, 23 Jan 2004 11:29:14 -0800 Subject: Brewer Science Seminar Message-ID: <4011760A.ED610F37@snf.stanford.edu> Labmembers: Two technical representatives from Brewer Science (Kim Ruben and Mac Daily) will be here to talk about their line of materials for optoelectronics and MEMS applications. Please see below for an overview of some of their products. This presentation will be held on Friday, Jan. 30, at 10:30 am, in CIS 101 conference room. ****************************************************** Brewer Science's Specialty Materials Division is a supplier of novel materials for the optoelectronics and MEMS applications. Products include high refractive index polymers, protective coatings, lift-off/sacrificial layers, color filter materials, black matrix materials, passivation layers, planarization layers, alignment layers and other unique organic polymers. The primary materials to be reviewed in this presentation are: OptiNDEXTM: Families of high refractive index spin on coatings based on two chemical platforms. The first platform is metal oxide based chemistry, while the other is polymer based chemistry. The spin applied metal oxide materials provide refractive indices up to 2.2 and the polymer materials provide refractive indices up to 1.74. ProTEKTM: A spun applied protective coating system for front side circuitry during backside KOH or HF processing. This material is easily removed with acetone, plasma ashing, or thermal decomposition. PiRL III: A polymer material for use in metal or SU-8 lift-off, as a protective coating during wafer dicing, or as a sacrificial layer for creating free standing structures. Unique to PiRL III is its ability to withstand up to over 350 degrees Celsius and still remain soluble in TMAH developers. Please review our website www.brewerscience.com/sm for these and other materials. ********************************************************* Kim Ruben is a Technical Manager for the Research & Development Division within Brewer Science, Inc. She has been with the company for 14 years, and has many responsibilities within not only the R&D division, but also the Chemicals Manufacturing Division. She has an undergraduate degree in Chemistry/Biology, and a MBA from Webster University. She is currently responsible for the development and commercialization of the ProTEK Protective Coatings Project. Mac Daily is responsible for new business development of the Specialty Materials Division of Brewer Science. In this role Mac works with Brewer Science?s R&D Division, research and development centers, and potential customers to provide chemical solutions for unique applications. Mac has been an engineer in the petrol-chemical and manufacturing industries for the last 20 years. Mac?s previous assignment was as head of operations for Brewer Science?s Chemical Manufacturing Group. -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From hsubkim at stanford.edu Fri Jan 23 12:35:52 2004 From: hsubkim at stanford.edu (Hyoungsub Kim) Date: Fri, 23 Jan 2004 12:35:52 -0800 Subject: Reminder: University Oral Examination - Hyoungsub Kim (Jan. 26, 10AM) Message-ID: <00a801c3e1f0$8255d650$126b40ab@Hyoungsub> University Oral Examination Hyoungsub Kim Department of Materials Science and Engineering Monday, January 26, 2003 10:00AM (Refreshments will be served at 9:45AM) CIS-X 101 Auditorium Stanford University Nano-scale zirconia and hafnia grown by atomic layer deposition: crystallinity, interface structures and electrical properties With the continued scaling of high speed transistors, leakage current densities across the SiO2 gate dielectric have increased enormously through direct tunneling. Presently, metal oxides having higher dielectric constants than SiO2 are being investigated to reduce the leakage current by increasing the physical thickness of the dielectric. Among the materials most widely investigated are ZrO2 and HfO2. Many possible techniques exist for depositing high-k gate dielectrics. Atomic layer deposition (ALD) has drawn attention as a method for preparing ultrathin metal oxide layers with excellent electrical characteristics and near-perfect film conformality due to the layer-by-layer nature of the deposition mechanism. For this research, an ALD system using ZrCl4/HfCl4 and H2O was built and optimized. The microstructural and electrical properties of ALD-ZrO2 and HfO2 grown on SiO2/Si substrates were investigated and compared using various characterization tools. In particular, the crystallization kinetics of amorphous ALD-HfO2 films were studied using in-situ annealing experiments in a TEM. The effect of crystallization on the electrical properties of ALD-HfO2 was also investigated using various in-situ and ex-situ post-deposition anneals. Our results revealed that crystallization had little effect on the magnitude of the gate leakage current or on the conduction mechanisms. Building upon the results for each metal oxide separately, more advanced investigations were made. Several nanolaminate structures using ZrO2 and HfO2 with different sequences and layer thicknesses were characterized. The effects of the starting microstructure on the microstructural evolution of nanolaminate stacks were studied. Additionally a promising new approach for engineering the thickness of the SiO2-based interface layer between the metal oxide and silicon substrate after deposition of the metal oxide layer was suggested. Through experimental measurements and thermodynamic analysis, it is shown that a Ti overlayer, which exhibits a very high oxygen solubility, can effectively getter oxygen from the interface layer, thus decomposing SiO2 and reducing the interface layer thickness in a controllable fashion. As one of several possible applications, ALD-ZrO2 and HfO2 gate dielectric films were deposited on Ge (001) substrates with different surface passivations. After extensive characterization using various microstructural, electrical and chemical analyses, excellent MOS electrical properties of high-k gate dielectrics on Ge were successfully demonstrated with optimized surface nitridation of the Ge substrates. ================================ Hyoungsub Kim Ph.D Candidate Department of Materials Science & Engineering Stanford University Room 203, McCullough Bldg. 476 Lomita Mall Stanford, CA 94305-4045 Ph: 650-725-2616 (office) Fax: 650-736-1984 From guerra at par.stanford.edu Fri Jan 23 16:02:23 2004 From: guerra at par.stanford.edu (Ann Guerra) Date: Fri, 23 Jan 2004 16:02:23 -0800 (PST) Subject: SPECIAL SEMINAR - Dr. Makimoto of Sony, on digital future Message-ID: Dr. Tsugio Makimoto Sony Corporation Friday, February 6, 2004 1:30 p.m. Cypress Semiconductor Auditorium, CISX-101 -Title: Paradigm Changes Toward Digital Consumer Products/Technology -Abstract: The chip industry is in transition from a PC centric to a DC or Digital Consumer centric industry. Digitalization of consumer electronics will have major impacts on our society creating the "Second Digital Wave." New directions in chip technologies will be presented in the new paradigm. Robotics will become the market and technology driver in the long range and "Cleverness Driven Devices" will become increasingly important. -Biography: Born on 15th May 1937, Dr. Makimoto is Corporate Advisor to Sony Corporation in charge of semiconductor technology. He received the B.S degree from the University of Tokyo in 1959, the M.S degree in 1966 from Stanford University., and the Ph.D. degree from the University of Tokyo in 1971. From 1959 to 1999, he worked at Hitachi Ltd. in the field of semiconductor. He started as a device engineer and later assumed various managerial positions including General Manager of Semiconductor Division in 1992 and finally Senior Executive Managing Director in 1997. He joined Sony as Corporate Senior Executive Vice President in 2000 and assumed the current position in 2001. In the late 1970s, he took the leadership of developing high-speed CMOS devices which marked a key turning point in the history of semiconductor industry. In the late 1980s, he discovered the cyclical nature of semiconductor industry which alternates directions between customization and standardization, roughly every ten years. This cycle was named as Makimotos Wave by the Electronics Weekly in UK. Based on this wave concept, he wrote a book Living with the Chip in 1995 jointly with D. Manners. In the 1990s, he took leadership in developing and manufacturing high density DRAMs and new types of RISC microprocessors, and was nominated an IEEE FELLOW in 1997 for his contribution for developing and manufacturing high-density MOS devices. In 1997, he wrote a book titled Digital Nomad, again with D. Manners, to introduce the new trends in the field of electronics after the PC. Dr. Makimoto gave various keynote speeches at major semiconductor related international conferences including two keynotes at IEDM in 1982 and 2002. From shott at snf.stanford.edu Mon Jan 26 16:12:21 2004 From: shott at snf.stanford.edu (John Shott) Date: Mon, 26 Jan 2004 16:12:21 -0800 Subject: Computer outage early tomorrow morning ... Message-ID: <4015ACE5.3080209@snf.stanford.edu> SNF Lab Members: We need to take down the computers on which Coral runs early tomorrow morning. Sunstar (where you run in-lab Coral clients) will be down approximately from 5 a.m. to 7 a.m. The machine where we run the Coral servers will only be down for a brief time (< 10 minutes) during this time window so use of Remote Coral should be only slightly impacted tomorrow morning. Thank you for your support and understanding. John From edwardsj at stanford.edu Tue Jan 27 11:00:10 2004 From: edwardsj at stanford.edu (Jane Edwards) Date: Tue, 27 Jan 2004 11:00:10 -0800 Subject: Announcement: 2004 Flory Conference Message-ID: <001601c3e507$ca2092d0$236540ab@AVANDEL> Greetings! The Corporate Program for the Departments of Chemistry and Chemical Engineering at Stanford University would like to invite you to the 2004 Flory Conference. This year's conference will take place on Friday, February 6th and will focus on Advanced Microfluidics Concepts and Applications. The Speaker schedule for this year is listed below: 9:00 9:45Harold Craighead - Cornell University Nanofabricated devices for molecular analysis 9:45 10:30Jed Harrison - University of Alberta Electrokinetic Pumping in a chip: To Choose or not to Choose 10:30 10:45Morning Break 10:45 11:30Dr. Chris Ko- Samsung Advanced Institute of Technology BioMEMS: Next Generation Molecular Diagnostic Device 11:30 12:15Jason Shear - University of Texas at Austin Exploring Short-Lived Molecules using 'Ultrafast' Electrophoresis 12:15 1:30Lunch 1:30 2:15Juan Santiago - Stanford University Electrokinetice Microfluidic Systems: Sample Stacking and Instabilities 2:15 3:00Richard A. Mathies - University of California at Berkeley Microfluidics for Genetic Analysis, Pathogen Detection and Space Exploration 3:00 3:15Afternoon Break 3:15 4:00Ronald G. Larson - University of Michigan Dynamics of Dilute Solutions of Flexible Polymers 4:00 4:45Dr. Bruno Michel - IBM Zurich Research Laboratory Printing Meets Lithography: Soft Approaches to High-Resolution Patterning 5:00 6:00Poster Session and Reception Registration for this conference is only $225. You may register on line at: http://www.stanford.edu/dept/chemistry/events/flory/2004 / If you are a member of the Corporate Program Registration is free. We also provide for corporate sponsorship for the Flory Conference in the amount of $5,000. By sponsoring this event, your company is entitled to free registration for all your employees. In addition, we would also name your company in the conference program. If you are interested in supporting the Flory Conference, or would like any other information regarding this event, please feel free to contact Aileen Agustin. Regards, Aileen Agustin 650-723-4770 aileena at stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From cmfaulkn at snf.stanford.edu Tue Jan 27 16:57:53 2004 From: cmfaulkn at snf.stanford.edu (Carl Faulkner) Date: Tue, 27 Jan 2004 16:57:53 -0800 (PST) Subject: MISSING 8"WAFERS Message-ID: We are missing several 8" Silicon Genesis SOI wafers. They were stored in a standard 8" plastic carrier and labeled ACORN. They were last seen the Thursday before the shutdown stored between the bins next to the YES oven. If you have seen them or removed them, please let us know. Thanks, Carl Faulkner 650 387-3714 cmfaulkn at snf.stanford.edu or Dan Grupp 650 704-9551 From mahnaz at snf.stanford.edu Wed Jan 28 16:31:54 2004 From: mahnaz at snf.stanford.edu (Mahnaz Mansourpour) Date: Wed, 28 Jan 2004 16:31:54 -0800 Subject: UP Message-ID: <4018547A.ACB43959@snf.stanford.edu> Hello all, Just a kind reminder that the YES oven is up and is ready to be used. mahnaz From guerra at par.stanford.edu Wed Jan 28 16:57:40 2004 From: guerra at par.stanford.edu (Ann Guerra) Date: Wed, 28 Jan 2004 16:57:40 -0800 (PST) Subject: SPECIAL ICL SEMINAR: ISSCC by Atheros 2/9/04 Message-ID: **** SPECIAL SEMINAR - TWO ISSCC PRESENTATIONS **** followed by a Discussion Session MONDAY, FEBRUARY 9, 2004 10:00 a.m. CIS-101 "A Single-Chip Dual-Band Tri-Mode CMOS Transceiver for IEEE 802.11a/b/g/ WLAN" M. Zargari, et. al. (co-authors from Atheros, IRF, and Stanford) presented by Masoud Zargari, Atheros Communications ABSTRACT: A 2.4/5GHz transceiver implements the RF and analog front-end of an IEEE 802.11 a/b/g WLAN system in 0.25um CMOS technology. The IC transmits 9dBm/8dBm EVM-compliant output power at 5GHz/2.4GHz for a 64QAM OFDM signal. The overall receiver NF is 5.5/4.5dB at 5/2.4GHz. AND "A 3.2 to 4GHz 0.25um CMOS Frequency Synthesizer for IEEE 802.11 a/b/g WLAN" M. Terrovitis, M. Mack, K. Singh, M. Zargari Atheros Communications presented by Manolis Terrovitis ABSTRACT: A fully integrated 3.2 to 4GHz frequency synthesizer, part of an IEEE 802.11 a/b/g/ transceiver, is implemented in a 0.25um standard CMOS technology. The phase noise is -105dBc/Hz at 10kHz offset, and the spurs are below -64dBc when measured at the 5GHz transmitter output. The settling time is less than 150us. From guerra at par.stanford.edu Wed Jan 28 17:01:14 2004 From: guerra at par.stanford.edu (Ann Guerra) Date: Wed, 28 Jan 2004 17:01:14 -0800 (PST) Subject: ISSCC PRESENTATION - 2/10 Special Seminar Message-ID: SPECIAL SEMINAR **** TWO ISSCC PRESENTATIONS **** IEEE International Solid-State Circuits Conference TUESDAY, FEBRUARY 10, 2004 10:30 a.m. CIS-101 "An 800mW 10Gb Ethernet Transceiver in 0.13um CMOS" S. Sidiropoulos, et. al; Aeluros presented by Arnold Feldman ABSTRACT: A fully integrated 10Gb Ethernet transceiver IC using a standard 0.13um CMOS process integrates 10.3Gb/s and 4x3.12Gb/s analog front-ends, with Layer-1 coding and management functionality. The 2.5x5mm2 IC exceeds both 10GE and SONET specifications, and dissipates 800mW from its 1.2/2.5V supplies. "A 1.8V 14b 10MS/s Pipelined ADC in 0.18um CMOS with 99dB SFDR" Y. Chiu, P. Gray, B. Nikolic; U. C. Berkeley presented by Yun Chiu ABSTRACT: A 1.8V, 14b pipelined ADC using passive capacitor error-averaging and nested CMOS gain boosting achieves 99dB SFDR for signal frequencies up to 5.1MHz without trimming or calibration. With a 1MHz analog input, DNL is 0.31LSB, INL is 0.58LSB, and SNDR is 73.6dB. The chip occupies 15mm2 in 0.18um CMOS and dissipates 112mW. From guerra at par.stanford.edu Wed Jan 28 17:05:07 2004 From: guerra at par.stanford.edu (Ann Guerra) Date: Wed, 28 Jan 2004 17:05:07 -0800 (PST) Subject: PHILIPS EINDHOVEN - visit & presentation 2/11 Message-ID: SPECIAL VISIT & PRESENTATION by PHILIPS RESEARCH, EINDHOVEN Wednesday, February 11, 2004 Three scientists from Philips Research, Kathleen Philips, Bas Putter and Ed v Tuijl, will visit CIS. At 11.00 a.m. in CIS-101 they will give an overview of their work at Philips Research on AD and DA conversion. After lunch, the scientists will be available for further discussions in CIS-101. From mtang at snf.stanford.edu Thu Jan 29 13:24:54 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Thu, 29 Jan 2004 13:24:54 -0800 Subject: Brewer Scientific Presentation - Reminder Message-ID: <40197A26.E2098250@snf.stanford.edu> Labmembers: Just a reminder for those who may be interested: technical representatives from Brewer Science will be here to talk about their line of materials for optoelectronics and MEMS applications. Please see below for an overview of some of their products. This presentation will be held on Friday, Jan. 30, at 10:30 am, in CIS 101 conference room (NOT the Auditorium.) ****************************************************** Brewer Science's Specialty Materials Division is a supplier of novel materials for the optoelectronics and MEMS applications. Products include high refractive index polymers, protective coatings, lift-off/sacrificial layers, color filter materials, black matrix materials, passivation layers, planarization layers, alignment layers and other unique organic polymers. The primary materials to be reviewed in this presentation are: OptiNDEXTM: Families of high refractive index spin on coatings based on two chemical platforms. The first platform is metal oxide based chemistry, while the other is polymer based chemistry. The spin applied metal oxide materials provide refractive indices up to 2.2 and the polymer materials provide refractive indices up to 1.74. ProTEKTM: A spun applied protective coating system for front side circuitry during backside KOH or HF processing. This material is easily removed with acetone, plasma ashing, or thermal decomposition. PiRL III: A polymer material for use in metal or SU-8 lift-off, as a protective coating during wafer dicing, or as a sacrificial layer for creating free standing structures. Unique to PiRL III is its ability to withstand up to over 350 degrees Celsius and still remain soluble in TMAH developers. Please review our website www.brewerscience.com/sm for these and other materials. ********************************************************* Kim Ruben is a Technical Manager for the Research & Development Division within Brewer Science, Inc. She has been with the company for 14 years, and has many responsibilities within not only the R&D division, but also the Chemicals Manufacturing Division. She has an undergraduate degree in Chemistry/Biology, and a MBA from Webster University. She is currently responsible for the development and commercialization of the ProTEK Protective Coatings Project. Mac Daily is responsible for new business development of the Specialty Materials Division of Brewer Science. In this role Mac works with Brewer Science?s R&D Division, research and development centers, and potential customers to provide chemical solutions for unique applications. Mac has been an engineer in the petrol-chemical and manufacturing industries for the last 20 years. Mac?s previous assignment was as head of operations for Brewer Science?s Chemical Manufacturing Group. -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at snf.stanford.edu Fri Jan 30 07:11:41 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Fri, 30 Jan 2004 07:11:41 -0800 Subject: Missing 8" Wafers - Reward! Message-ID: <401A742D.23D3B874@snf.stanford.edu> Labmembers -- I'm writing on behalf of a couple of your fellow labmembers (Carl Faulkner & Dan Grupp) who are still desperately searching for their 8" wafers. There are three wafers in a large, white wafer cassette box (too big to fit into a lab bin, which is why they were left out.) I am presuming they may have been misplaced or mistaken for another project, so may be still lying around about the lab or somewhere else in the building. They are also unusual wafers, of little use or importance (except perhaps for the novelty value) to anyone else, so may have escaped your attention. The box may labeled with Carl's and Dan's names and "Acorn" or some combination thereof. No other distinguishing or endearing features (e.g., "white patch over the left paw"). Oh yes, Dan is offering a reward for the safe return of their pet project: $100 and a week's worth of lunch, on him. Please everyone, help Dan & Carl by keeping a lookout for anything matching this description. Thanks, Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu