From mbaran at stanford.edu  Wed May  5 08:44:58 2004
From: mbaran at stanford.edu (Maureen Baran)
Date: Wed, 5 May 2004 08:44:58 -0700
Subject: Cell Phone found
Message-ID: <200405051544.i45FixHT022057@smtp2.Stanford.EDU>

There was a cell phone found yesterday near the lab.  If you are missing
your cell phone, please come over to my cubicle # 41 and be prepared to
describe it.

 

Thank you,

 

Maureen Baran

 

 

-------------- next part --------------
An HTML attachment was scrubbed...
URL: <http://snf.stanford.edu/pipermail/labmembers/attachments/20040505/33d769a1/attachment.html>

From mtang at snf.stanford.edu  Wed May  5 09:53:50 2004
From: mtang at snf.stanford.edu (Mary Tang)
Date: Wed, 05 May 2004 09:53:50 -0700
Subject: Talk on "Limits of Optical Lithography"
Message-ID: <40991C1E.73767E4A@snf.stanford.edu>

Hi everyone --

A message, forwarded on behalf of Prof. Pease:

>Date: Wed, 05 May 2004 09:42:17 -0700
>To: group at jump;cislabmembers
>From: Fabian Pease <pease at cis.stanford.edu>
>Subject: Limits of optical lithography
>Cc: mailto:labmembers at snf.stanford.edu, echen at briontech.com,
eisensee at cis
>Bcc: robert_Socha at asml.com
>
>As part of EE317 Dr. Robert Socha of ASM Lithography (the no. 1
supplier
>of photolithographic equipment) will be giving two talks on the limits
of
>optical lithography. One on imaging at very low contrast levels and the

>other on immersion lithography.The planned dates and times are 4:00pm
to
>5:15 pm May 17 and 19.  If you are interested in attending please let
me
>or Sandy know so we can get an apporpriately sized room.
>Fabian Pease

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu




From rcrane at snf.stanford.edu  Thu May  6 11:56:33 2004
From: rcrane at snf.stanford.edu (Dick Crane)
Date: Thu, 06 May 2004 11:56:33 -0700
Subject: Major loss of chilled water service
Message-ID: <409A8A61.2DB0FF34@snf.stanford.edu>

All,

We are currently experiencing a severe, university-wide, chilled water
production problem due to a ruptured pipe in the cogen plant. Building
air conditioning services are being turned off throughout the campus.

The SNF fab is having temperature control problems with some tools as
our process cooling water loop is slowly heating up. Critical work
should be delayed or approached with an understanding of the process
changes. The fab may lose compressed air sometime tomorrow due to
temperature trips at the compressors.

CISX labs will experience the same rise in chilled water temperature.
Possibly loss of compressed air tomorrow will also affect these labs.

I will issue updates as to repair status.

Dick Crane
Operations Manager
Stanford Nanofabrication Facility



From rcrane at snf.stanford.edu  Thu May  6 17:51:37 2004
From: rcrane at snf.stanford.edu (Dick Crane)
Date: Thu, 06 May 2004 17:51:37 -0700
Subject: Chilled water update 1
Message-ID: <409ADD98.ED0A84A0@snf.stanford.edu>

All,

The chilled water system problem continues, however the system
temperature has stabilized. By removing air conditioning loads
throughout the campus, the smaller capacity chillers are now able to
handle the load. I believe the leak has been repaired. Cooling tower
pump motors that were damaged in the tower flood will need to be
replaced on Saturday. The chillers should be able to handle normal loads
by Saturday night (5/8/04). CIS/CISX building compressed air should not
be lost. The office areas may be warmer than usual.

In the SNF fab: The Nikons will remain off until Monday. Litho may
experience humidity control problems. Diffusion should be fully
operational. Thin films should be fully operational. Etchers may
experience changes in performance due to higher operating temperatures.
In some cases, they  may not be adversely affected. Please check your
process with a test run if running critical processes.

Facilities Operations expects the chilled water system to be back to
normal operation Saturday evening or Sunday morning.

Thanks,

Dick Crane
Operations Manager
Stanford Nanofabrication Facility



From kailash at stanford.edu  Thu May  6 18:35:16 2004
From: kailash at stanford.edu (Kailash)
Date: Thu, 6 May 2004 18:35:16 -0700
Subject: Fw:  Oral Exam Abstract, Kailash Gopalakrishnan on Monday, May 10
Message-ID: <005d01c433d3$8d0d9490$b16240ab@IBM0AE49E2FAA1>


----------------------------------------------------------------------------
---------------------------
                       University Ph.D. Oral Examination

                 I-MOS and its derivatives for Logic and Memory

                             Kailash Gopalakrishnan
                             kailash at stanford.edu

                    Department of Electrical Engineering
                                Stanford University.

                                    101 Packard
                                Stanford Campus

                            Monday, May 10, 2004
                            2:30 PM - 3:30 PM
                    (Refreshments served at 2:15 PM)


One of the "fundamental" problems in the continued scaling of
transistors is the 60 mV/decade thermodynamic limit in the subthreshold
slope.  Reduction in the transistor threshold voltage with scaling has
therefore resulted in a rapid increase in the standby or the static
leakage current of the MOSFET. This increase coupled with the traditional
doubling of the number of transistors per chip every 2-3 years has led to
an exponentially increasing static power dissipation in chips.

In this talk, detailed studies on a new kind of transistor, the
I-MOS (Impact-ionization MOS) are presented. The I-MOS uses modulation of
the avalanche breakdown voltage in a novel gated p-i-n diode structure in
order to switch from the OFF state to the ON state and vice versa. Since
avalanche breakdown is an abrupt function of the electric field,
simulations show that the device has a subthreshold slope much steeper
than kT/q (~ 5-10 mV/decade) and therefore many orders of magnitude lower
static power with switching speeds comparable to or exceeding CMOS. This
talk will also present experimental results obtained with the different
I-MOS prototypes. These results verify that the I-MOS exhibits very steep
subthreshold slopes (~ 10 mV/decade) and high turn-on and turn-off speeds.
Results on recessed channel I-MOS devices and germanium based p-i-n
structures that show promise for VDD scaling will also be discussed.

I-MOS devices show significant hot carrier effects that cause
threshold voltage instability and degradation in the subthreshold slope
with repeated measurements. Monte Carlo simulation studies enhanced
understanding of the nature of this hot carrier injection mechanism and
clarified reasons for the high injection efficiency (I.E. = IG/ID) in the
n-channel I-MOS and its band-to-band tunneling derivative. Novel Step
Band-to-Band Hot Electron Injection (SBBHE) structures were fabricated
that showed extremely high injection efficiencies (10-3) down to VDS=3.5V
and thus potential for extremely low programming power . many orders of
magnitude better than conventional NOR FLASH memory cells.




From rcrane at snf.stanford.edu  Mon May 10 07:18:11 2004
From: rcrane at snf.stanford.edu (Dick Crane)
Date: Mon, 10 May 2004 07:18:11 -0700
Subject: Chilled water update 2
Message-ID: <409F8F23.4B0F6182@snf.stanford.edu>

All,

The chilled water system problem has been repaired. As on 5:00pm on
Saturday, May 8, the chilled water curtailment has been lifted and all
systems are being returned to normal operation.  There is adequate
cooling tower pumping capacity to satisfy chilled water needs.  The
chilled water loop temperature has been reduced to normal limits.

Thanks,

Dick Crane
Operations Manager
Stanford Nanofabrication Facility



From shott at snf.stanford.edu  Mon May 10 17:40:35 2004
From: shott at snf.stanford.edu (John Shott)
Date: Mon, 10 May 2004 17:40:35 -0700
Subject: Machine upgrade ...
Message-ID: <mailman.3.1356287116.5865.labmembers@snf.stanford.edu>

SNF Lab Members:
 
As a number of you are aware, we've been experiencing a number of cases
recently when Coral appears to be running slowly.  In fact, when it appears
as if Coral is running slowly, it is actually other things that are loading
down the machine that are causing it to run slowly ... and you can help by
being careful to shutdown those things that you are not using.
 
This machine has 2GB of main memory ... however, each Star Office session
takes 105-110 MB of memory.  Each Mozilla session takes 45-50 MB of memory.
Each time that you login to a new Sunray (rather than logging in once with a
smart card and moving around the lab to it) you use about 50 MB of memory.
What really kills us, however, isn't the actual usage ... it's the number of
people who leave the lab without logging out and, even worse, the folks that
have sessions running on several Sunrays.  Earlier today, when things were
bogging down, I found that there were a total of 50 Mozilla sessions running
... and I know that there weren't 50 people in the lab.  (Note: Coral also
takes a lot of memory ... about 80 MB per client because it runs a separate
Java Virtual Machine for each client.  However, Coral is smart enough to
only let you run one Coral client at a time and shuts down the others if you
try to start a new one ...)
 
So, use what you need ... but shut things down when you are done using them.
 
Now, that said, we are on the verge of moving the Sunray clients to another,
faster machine.  This will likely occur first thing in the morning (maybe
even tomorrow morning).  In general, that should cause few problems ... your
password will still work, your files will all be there, etc.  Some of you
will notice that things look slightly different ... this will be Solaris 9
instead of Solaris 8, but more most purposes, you shouldn't notice much of a
difference.
 
If you have any questions, please let me know.

Thanks,

John
 
-------------- next part --------------
An HTML attachment was scrubbed...
URL: <http://snf.stanford.edu/pipermail/labmembers/attachments/20040510/99b2cb7e/attachment.html>

From shott at snf.stanford.edu  Thu May 13 07:59:39 2004
From: shott at snf.stanford.edu (John Shott)
Date: Thu, 13 May 2004 07:59:39 -0700
Subject: New system update ...
Message-ID: <mailman.4.1356287116.5865.labmembers@snf.stanford.edu>

SNF Lab Members:
 
As you know, yesterday we moved to a different machine for running the
SunRay thin clients in the lab.  I know that many of you encountered
problems, particularly during the times when the lab was busy.  We've made
an initial effort to figure out what was the cause of these problems and
have re-configured a couple of things in hopes of eliminating these
problems.
 
If you observe these problems again, please contact us ... e-mail sent to
coral at snf.stanford.edu is the best way.  Please try to describe the problem
that you are encountering as well as you can.
 
One other thing that I forgot to mention: if you click the "earth icon" (the
one with the red clock hands on it) that is on the left side of the task bar
next to the Star Office icon, you will now fire up the mozilla browser.  It
takes a few seconds to come up, so be patient and don't click it again ...
 
Thanks for your continued support,

John
 
-------------- next part --------------
An HTML attachment was scrubbed...
URL: <http://snf.stanford.edu/pipermail/labmembers/attachments/20040513/b69f0dd2/attachment.html>

From mtang at snf.stanford.edu  Thu May 13 10:36:08 2004
From: mtang at snf.stanford.edu (Mary Tang)
Date: Thu, 13 May 2004 10:36:08 -0700
Subject: [Fwd: Optical lithography below 50nm]
Message-ID: <40A3B208.DB357365@snf.stanford.edu>



-------- Original Message --------
Subject: Optical lithography below 50nm
   Date: Thu, 13 May 2004 08:44:25 -0700
   From: Fabian Pease <pease at cis.stanford.edu>
     To: nishi at ee.Stanford.EDU;, mtang at snf.Stanford.EDU,
         ee317 at stanford.edu;,dutton at gloworm.Stanford.EDU;,
         libarra at ee.Stanford.EDU
     CC: ee317 at stanford.edu;, group at jumpjibe.Stanford.EDU

I don't believe I have access to the group addresses for ee, cis and
IClab. Could you please forward this notice to those groups? Thanks very
much.
Fabian

Optical lithography below 50nm
Dr. Robert Socha will be presenting two lectures next week (May 17 and
19) from 4 to 5:15 in Packard 204.
Dr. Socha is from ASML the major supplier of lithographic equipment to
the IC industry and he is a specialist in extending optical lithography
beyond the normally accepted limits.

May 17,
"Using Immersion Lithography to Extend Optical Lithography to the
Sub-50nm Regime"

May 19,
"Using Resolution Enhancement Techniques to Extend Optical
Lithography to Half-Wavelength-Sized Features in Production "

Fabian Pease

-------------- next part --------------
An HTML attachment was scrubbed...
URL: <http://snf.stanford.edu/pipermail/labmembers/attachments/20040513/3ecea37f/attachment.html>

From pruitt at stanford.edu  Thu May 13 12:15:19 2004
From: pruitt at stanford.edu (Beth Pruitt)
Date: Thu, 13 May 2004 12:15:19 -0700
Subject: Luke Lee lecture, today 2:15pm
Message-ID: <p0521061bbcc978e02730@[171.64.160.158]>

Prof. Luke Lee of UC Berkeley Bioengineering will be speaking today 
at 2:15 in Herrin T175 (ground floor of biology library building). 
His group works on BioMEMS and BioPoems (Biomedical Polymer Opto 
Electro Mechanical Systems). you are invited to attend.





From izuleta at stanford.edu  Thu May 13 19:07:50 2004
From: izuleta at stanford.edu (Ignacio A. Zuleta)
Date: Thu, 13 May 2004 19:07:50 -0700
Subject: FW: teflon boat for pieces, help!
Message-ID: <200405140207.i4E27stl030192@smtp2.Stanford.EDU>

Dear Labmates,
My wafer broke and I need to do a 'pad' etch and metal clean @ wbmetal to
the pieces. Does anyone have a SEMICLEAN TEFLON?BOAT/BASKET I can borrow for
half a day so I can keep my pieces into the right cleanliness track?
Thanks a lot!
Ignacio
-----------------------------------
Chemistry Department
Stanford University
333 Campus Drive
Stanford, CA 94305
(650)723-4332 (office)
(650)725-0259 (fax)
-----------------------------------
?



From alan.m.myers at intel.com  Fri May 14 08:35:35 2004
From: alan.m.myers at intel.com (Myers, Alan M)
Date: Fri, 14 May 2004 08:35:35 -0700
Subject: Intel Job Opportunities
Message-ID: <8A3152FDE2948B42AECCF93BFFA130EC02601C04@scsmsx401.sc.intel.com>

Dear Lab Members,
	Intel will be here next Tuesday and Wednesday recruiting recent and soon-to-be  PhD candidates for employment in their process development fab.  Please see the enclosed attachment for details.  Also feel free to pass this on to friends who may not be on this mailing list, but meet the requirements listed in the PowerPoint presentation.  Finally, please direct all questions to the contact listed on the presentation.

Alan

 <<Intel PhD employment forum.ppt>> 
-------------- next part --------------
A non-text attachment was scrubbed...
Name: Intel PhD employment forum.ppt
Type: application/vnd.ms-powerpoint
Size: 350720 bytes
Desc: Intel PhD employment forum.ppt
URL: <http://snf.stanford.edu/pipermail/labmembers/attachments/20040514/08c16435/attachment.ppt>

From ben.jian at arrayedfiberoptics.com  Sat May 15 00:28:32 2004
From: ben.jian at arrayedfiberoptics.com (ben.jian)
Date: Sat, 15 May 2004 00:28:32 
Subject: Question on patterning Pyrex wafer
Message-ID: <20040515002832.654.qmail@server266.com>

Dear labmembers,

We need to pattern Pyrex wafers. The etch profile of the trench should be isotropic and about 30um wide by 6um deep. In other words, we want to have a trench that's round on the bottom instead of a trench with vertical sidewalls. It seems to me wet etching is the way to go. Does anyone know what kind of etch mask and etchant are needed? We also need to protect the backside of Pyrex wafer during this etch. 

Thanks.

Ben Jian


-------------- next part --------------
An HTML attachment was scrubbed...
URL: <http://snf.stanford.edu/pipermail/labmembers/attachments/20040515/1f169762/attachment.html>

From rcrane at snf.stanford.edu  Tue May 18 12:17:28 2004
From: rcrane at snf.stanford.edu (Dick Crane)
Date: Tue, 18 May 2004 12:17:28 -0700
Subject: Fire alarm
Message-ID: <40AA6147.F5EA1763@snf.stanford.edu>

All,

We experienced a fire alarm this morning, May 18, around 1045, which
caused the SNF lab, CIS, and CISX buildings to be evacuated. The alarm
was set via a "Fire Alarm Pull Box" in response to a smoking, electrical
fault in a "daisy chained, extension cord/plug strip combination. The
tired plug/cord socket connection overheated causing local smoke and
minor damage to the carpet and the wall. Luckily the problem was noticed
immediately by the occupant of the area.

Connecting extension cords together to make longer cords (daisy
chaining), connecting a plug strip to an extension cord (daisy
chaining), plugging an extension cord into a plug strip (daisy
chaining), or using an extension cord for permanent use can be a fire
hazard and is not allowed under the Uniform Fire Code rules. Ironically,
the Fire Marshall has just completed a fire safety inspection of CIS
building looking for this type of violation. We had seven violations of
this type in CIS. CISX will be inspected next month.

Members of the CIS/CISX community, please check your office and lab
spaces for this type of hazard and correct any problem. The university
has approved power strips from TrippLite which come in various cord and
strip lengths (www.tripplite.com). See David Conrod (Fire Marshall's
Office) at dconrod at stanford.edu for additional information.

Thanks,

Dick Crane

Building Manager



From kaima at stanford.edu  Tue May 18 13:14:39 2004
From: kaima at stanford.edu (Kai Ma)
Date: Tue, 18 May 2004 13:14:39 -0700 (PDT)
Subject: EBIC measurement
In-Reply-To: <Pine.GSO.4.44.0404260211040.26124-100000@saga17.Stanford.EDU>
Message-ID: <Pine.GSO.4.44.0405181313100.20503-100000@saga12.Stanford.EDU>

Dear fellow labmembers,

I hope to do some EBIC measurements. Does anybody know where I can find a
company or other kind of institution that has this service?

Thank you very much for any informaiton!

Kai



From zappe at stanford.edu  Tue May 25 13:35:29 2004
From: zappe at stanford.edu (Stefan Zappe)
Date: Tue, 25 May 2004 13:35:29 -0700
Subject: Wafers with different doping levels
Message-ID: <5.1.0.14.2.20040524205057.03212570@zappe.pobox.stanford.edu>

Hi,

I am looking for 4 inch Silicon and SOI wafers (single or double side 
polished)
with extreme doping levels (n-type and p-type). Resistivity should ideally 
be either < 0.1 Ohm cm or > 100 Ohm cm (FZ material ?).

SOI could also be in the 1- 20 Ohm cm range, device layer >45 um <100um, 
handle wafer ideally > 500 -1000 um.

I just need 2 wafers per type and companies require often to buy more 
wafers at a time.
Has anyone spare wafers I could buy ?

Thanks,
Stefan



From yy7343 at hotmail.com  Wed May 26 09:00:08 2004
From: yy7343 at hotmail.com (Yahong Yao)
Date: Wed, 26 May 2004 09:00:08 -0700
Subject: ZnO deposition
Message-ID: <BAY15-F18k9uDRSR9jZ00007f25@hotmail.com>

Dear Labmembers,

I found ZnO in the SNF web site: 
http://snf.stanford.edu/Materials/ChemFiles/ZnO2.html.  But I can't find 
which tool to deposit it.  Can anyone tell me where to do the deposition?  
Thank you very much for your input.

Regards,
Yahong Yao

_________________________________________________________________
FREE pop-up blocking with the new MSN Toolbar ? get it now! 
http://toolbar.msn.click-url.com/go/onm00200415ave/direct/01/



From vlordi at stanford.edu  Fri May 28 13:02:29 2004
From: vlordi at stanford.edu (Vincenzo Lordi)
Date: Fri, 28 May 2004 13:02:29 -0700
Subject: University Oral Examination - Vincenzo Lordi (June 8, 3:30pm)
Message-ID: <p06020406bcdd417ebc84@[171.64.97.8]>

University Oral Examination
Vincenzo Lordi
Department of Materials Science and Engineering
Stanford University

Tuesday, June 8, 2004
3:30pm (Refreshments will be served at 3:15pm)
CIS-X Auditorium

"Band Edge Optical Properties of GaInNAs(Sb) and the Relation to 
Atomic Structure"

Lasers, detectors, and electroabsorption modulators operating in the 
telecommunications wavelength range of 1300-1600 nm are important not 
only for optical fiber communications, but also for use in optical 
interconnects to replace the electrical lines limiting the future 
speed of microelectronics. The design of long wavelength optical 
interconnects allows lower voltage operation as well as seamless 
integration with optical networking. The novel dilute nitride III-V 
alloys, GaInNAs and GaInNAsSb, are promising material systems for 
realizing quantum-well (QW) optoelectronic devices on GaAs that 
operate in this wavelength range. We grow these materials using 
solid-source molecular beam epitaxy (MBE).

The luminescent quality of as-grown material is generally poor but is 
improved by ex situ rapid thermal annealing at 700-800 degC for 1-3 
min. However, the improvement in material quality is accompanied by 
an undesirable blueshift of the wavelength. Understanding the 
mechanism of this blueshift is critical for reproducible control of 
the operating wavelength of devices using these materials in the 
active region.

X-ray absorption, electroreflectance, and photoluminescence 
spectroscopies were used to study a series of transitions near the 
apparent band edge of the material that correspond to different N-In 
nearest neighbor configurations. These band-edge states are found to 
be a dominant contribution to the bandgap blueshift upon annealing. 
As-grown material contains a random distribution of bonds, which is 
dominated by N-Ga nearest neighbors, corresponding to a smaller 
bandgap. Annealing shifts the distribution of bonds toward increased 
N-In nearest neighbors and a configuration with a larger bandgap that 
is also more thermodynamically stable. The anneal-induced blueshift 
of the bandgap saturates after the material has reached equilibrium, 
as expected, although the luminescent quality of the material can 
continue to be increased.

In addition,  the electroabsorption properties of the GaInNAs(Sb) QWs 
were measured by photocurrent to determine their suitability for use 
in optical modulators. Spectra taken at room temperature demonstrate 
very nice quantum confined Stark effect (QCSE) behavior, with sharp 
exciton peaks having FWHM less than 25 meV. The peak absorption 
coefficient of fully annealed GaInNAsSb QWs was measured to be close 
to 35,000 /cm at ~1525 nm wavelength, a value higher than reported 
for competing materials, while annealed GaInNAs QWs showed peak 
absorption of ~18,000 /cm at 1250 nm. Analogous to the material's 
luminescent behavior, thermal annealing was found to increase the 
absorption coefficient of the QWs while blueshifting the bandgap, 
employing the mechanism described above. The measured 
electroabsorption characteristics indicate that optical modulators 
can be fabricated throughout the 1300-1600 nm wavelength range with 
performance comparable or superior to competing materials grown on 
InP substrates. We predict device performance for an asymmetric 
Fabry-Perot reflection modulator of up to 15-20 dB modulation ratio 
using less than 3 V swing.
-------------- next part --------------
A non-text attachment was scrubbed...
Name: %
Type: application/applefile
Size: 128 bytes
Desc: not available
URL: <http://snf.stanford.edu/pipermail/labmembers/attachments/20040528/1b13cab3/attachment.bin>
-------------- next part --------------
A non-text attachment was scrubbed...
Name: Lordi-Abstract.pdf
Type: application/octet-stream
Size: 69549 bytes
Desc: not available
URL: <http://snf.stanford.edu/pipermail/labmembers/attachments/20040528/1b13cab3/attachment.obj>

From pruitt at stanford.edu  Fri May 28 15:48:06 2004
From: pruitt at stanford.edu (Beth Pruitt)
Date: Fri, 28 May 2004 15:48:06 -0700
Subject: ME342 open posters
Message-ID: <p05210626bcdd6f9ccf81@[192.168.0.108]>

You are invited to the open poster session of ME342A.
Projects and solution concepts for ME342B will be presented on the 
last day of class.

3:30-5pm
Thursday, June 3
CIS Lobby

please stop by to see what these 6 teams plan to prototype in SNF this summer!


-------------- next part --------------
An HTML attachment was scrubbed...
URL: <http://snf.stanford.edu/pipermail/labmembers/attachments/20040528/97730771/attachment.html>

From pruitt at stanford.edu  Fri May 28 15:52:27 2004
From: pruitt at stanford.edu (Beth Pruitt)
Date: Fri, 28 May 2004 15:52:27 -0700
Subject: ME342 open posters
Message-ID: <p05210629bcdd72d18fea@[192.168.0.108]>

You are invited to the open poster session of ME342A.
Projects and solution concepts for ME342B will be presented on the 
last day of class.

3:30-5pm
Thursday, June 3
CIS Lobby

please stop by to see what these 6 teams plan to prototype in SNF this summer!
-------------- next part --------------
An HTML attachment was scrubbed...
URL: <http://snf.stanford.edu/pipermail/labmembers/attachments/20040528/e90b52ad/attachment.html>

From rcrane at snf.stanford.edu  Fri May 28 16:27:20 2004
From: rcrane at snf.stanford.edu (Dick Crane)
Date: Fri, 28 May 2004 16:27:20 -0700
Subject: Chemical use this weekend
Message-ID: <40B7CAD8.37D1F6B2@snf.stanford.edu>

Labmembers,

Please help the next wet bench user have enough chemicals this long
weekend. We are starting a three day weekend so chemical supplies may
run low by Monday night. Please observe the recommended bath changing
schedules and we should be OK. If you must change a bath, please check
for an adequate supply of refill chemicals before dumping.

Litho area: developer and photoresist refill supplies are in the yellow
storage cabinet.

Thanks for your help and have a good Memorial Day weekend,

Dick