From rcrane at snf.stanford.edu Mon Nov 1 14:12:35 2004 From: rcrane at snf.stanford.edu (Dick Crane) Date: Mon, 01 Nov 2004 14:12:35 -0800 Subject: Varian Vacuum Tech. Seminar 11/8 Message-ID: <4186B4D3.6C4CEB8F@snf.stanford.edu> CIS, CISX and lab users, The Stanford Nanofabrication Facility is pleased to host Varian Vacuum Technologies' Vacuum Technology Seminar. Please see poster below. Dick Crane ?SCIENCE OF HIGH & ULTRA HIGH VACUUM? Speaker: Johan De Rijke, Varian Vacuum Technologies Objective: To assist in the training of scientists, engineers and technicians in the art and science of VACUUM. Date: Monday, November 8, 2004 Time: 10:00 AM- 2:30 PM Place: CISX Auditorium, CISX101 Host: Stanford Nanofabrication Facility Who is this for? ? Vacuum Novices: Someone who has minimal vacuum experience will receive a comprehensive treatment of high and ultra high vacuum practice. ? Vacuum Engineers: The experienced practitioner will gain valuable insights and pointers. Seminar Contents Schedule ? HV/UHV Introduction 10:00-12:00 Seminar / Short Course ? System Pressure ? Total Gas Load 12:00-12:45 Lunch (Complimentary) ? Materials Selection ? System Pumping Speed 12:45-2:00 Seminar Continued ? Gauges ? System Operation 2:00-2:30 Q & A Session ? Troubleshooting ? Q & A Session ? Complimentary Seminar Manual Reserve your place in this free seminar / short course (and lunch) by sending an email to: dan.jacobson at varianinc.com or call Dan at 650-387-9121 Sponsored by Varian Vacuum Technologies, 1.800.882.7426, a world leader in vacuum pumps and technology, dedicated to the advancement of the art and science of vacuum. Hosted by Stanford Nanofabrication Facility -------------- next part -------------- An HTML attachment was scrubbed... URL: From shott at snf.stanford.edu Mon Nov 1 15:30:19 2004 From: shott at snf.stanford.edu (John Shott) Date: Mon, 01 Nov 2004 15:30:19 -0800 Subject: If the latest version of Remote Coral doesn't work for you: Message-ID: <4186C70B.2000104@snf.stanford.edu> SNF Labmembers: Several of you have found that the "new and improved" version of Remote Coral won't download, much less run, on your machine. The error message complains about: "Missing signed entry in resource: xerces.jar". It appears as if the newer version of xerces.jar has a problem that interacts with a bug in some older versions of Java. Unfortunately, all of our testing of this prior to release did not encounter this problem .... and a number of SNF lab members have successfully downloaded and run the latest version of Remote Coral without errors. To fix this problem, you will need to remove the old version of Java on your machine and download a fresh version. Here are instructions as to how to do this: Under your computer's Control Panel, select "Add/Remove Programs" and remove Java (likely listed as Java Runtime Environment). Then go to: http://java.sun.com/j2se/1.4.2/download.html There, look for the link that says "Download J2SE JRE" and select that. (You DON'T want the one that says J2EE, or SDK, or NetBeans IDE with SDK .... those are all much bigger and don't contain anything that you need. You only need the one that is labelled with the link "Download J2SE JRE") You also don't want to download the stuff that is called Java 5.0. Go ahead and download and install that version of Java (which should also download and install a new version of Java Web Start). Then go to http://snf.stanford.edu/coral/etc/coral.jnlp to try the remote client again. This should resolve the problems that you are encountering with Remote Coral. We apologize for the inconvenience that this has caused. We DO try to test things before releasing them ... but, to be honest, did not anticipate that a newer version of xerces.jar would, in effect, "activate" a bug in older versions of Java. Thanks for your continued support, John From rohank at stanford.edu Tue Nov 2 13:07:18 2004 From: rohank at stanford.edu (Rohan D. Kekatpure) Date: Tue, 02 Nov 2004 13:07:18 -0800 Subject: Etching small features in Si Message-ID: <6.0.1.1.2.20041102124353.0401d0f0@rohank.pobox.stanford.edu> Hi all, I am trying to etch ~ 200-250nm wide trenches in Silicon with an aspect ratio of about 1:2 to 1:3. I have an oxide hard mask and it is not critical that I stop perfectly on some material (eg., oxide etc). About 5 degrees tilt in the sidewalls is also tolerable. I am looking for a first order guess on what chemistry (Fluorine, Chlorine, SF6 etc) to use and which instrument would be best suited for this purpose. Thank you in advance! -Rohan From mahnaz at snf.stanford.edu Wed Nov 3 09:46:22 2004 From: mahnaz at snf.stanford.edu (Mahnaz Mansourpour) Date: Wed, 03 Nov 2004 09:46:22 -0800 Subject: New Laurell Message-ID: <4189196E.2C314D31@snf.stanford.edu> Hello all I would like to do a general presentation on our new Laurell today 11/3 at 2 pm in the lab. If you are already a Laurell user or a new user like to get training please come by so I can point out few small differences and show you new options on the system. mahnaz From ankurjn at stanford.edu Wed Nov 3 17:26:52 2004 From: ankurjn at stanford.edu (Ankur Jain) Date: Wed, 3 Nov 2004 17:26:52 -0800 (PST) Subject: vendor info needed for drilling 0.5 mm holes in glass Message-ID: hello SNF labmembers, I want to drill 0.5 mm diameter through holes in 0.7 mm thick glass wafers. Do you know of any vendors who might be able to supply me with drill bits for this purpose? I've found a number of vendors for drills as small as 0.75 mm, but no one seems to have 0.5 mm drills. Any information in this regard will be greatly appreciated. thanks! Ankur. ************************************************************************* ANKUR JAIN Graduate Student Microscale Heat Transfer Laboratories Residence: Room 201, Building 530 126 Blackwelder Ct, Apt 902 Stanford, CA-94305 Stanford, CA - 94305 Ph: 650-736-0044 Cell Ph: 650-799-8986 http://www.stanford.edu/~ankurjn From rohank at stanford.edu Thu Nov 4 09:31:02 2004 From: rohank at stanford.edu (Rohan D. Kekatpure) Date: Thu, 04 Nov 2004 09:31:02 -0800 Subject: Thanks: RE: Etching small features in Si Message-ID: <6.0.1.1.2.20041104093013.01f62e20@rohank.pobox.stanford.edu> Hi All, Thank you very much for the suggestions/solutions on my question about etching narrow features in Si. Heres the summary of the feed-back I got in last two days: (1) LamPoly: This seems to be the machine of choice for most people. Specifically, I was suggested to use the HBR/O2 chemistry. (2) P5000: This is an equally good etcher with a similar chemistry and people have got straight sidewalls upto 85degrees. But it may require a little more tuning than Lam. (3) AMTEtcher: This is a via etcher and is capable of etching narrow features. But it suffers from poor selectivity to oxide hard-masks. Metals are allowed as stops but not as masks. (4) Drytek: Mixed feedback. People were mainly concerned about undercutting. (5) STS: Did not receive much feed back on this one except that the etch rate is very fast and that it produces scalloping along the sidewalls. Many thanks again to all the lab-members who shared their inputs. It was indeed very helpful. -Rohan *************************************************************************************************************************************** -----Original Message----- From: Rohan D. Kekatpure [mailto:rohank at stanford.edu] Sent: Tuesday, November 02, 2004 1:07 PM To: labmembers at snf.stanford.edu Subject: Etching small features in Si Hi all, I am trying to etch ~ 200-250nm wide trenches in Silicon with an aspect ratio of about 1:2 to 1:3. I have an oxide hard mask and it is not critical that I stop perfectly on some material (eg., oxide etc). About 5 degrees tilt in the sidewalls is also tolerable. I am looking for a first order guess on what chemistry (Fluorine, Chlorine, SF6 etc) to use and which instrument would be best suited for this purpose. Thank you in advance! -Rohan From vigneshg at stanford.edu Fri Nov 5 11:11:35 2004 From: vigneshg at stanford.edu (Vignesh G) Date: Fri, 05 Nov 2004 11:11:35 -0800 Subject: Anisotropically Etching Ti Message-ID: <6.1.2.0.2.20041105110707.01d4b210@vigneshg.pobox.stanford.edu> Hi, A few months ago I had sent an email asking if anyone knew about etching TiO2. In response to that I received a reply suggesting that I should try etching Ti and then oxidizing it. At that time I did not have the capability of trying that out, but now I do. Essentially, I am now looking for ways to anisotropically dry etch Ti (using a hard oxide such as Al2O3 as a mask). Any information on this would be appreciated. For e.g., would sputter etching work... etc.? Thanks. - Vignesh. From jerabek at snf.stanford.edu Mon Nov 8 09:20:09 2004 From: jerabek at snf.stanford.edu (Paul Jerabek) Date: Mon, 8 Nov 2004 09:20:09 -0800 (PST) Subject: Micronic mask writer Message-ID: To whoom it may concern: Micronic mask writer is down due to stage Y-axis shaft lock-up. Micronic field service has been called to address the problem. -Paul From jerabek at snf.stanford.edu Tue Nov 9 09:58:53 2004 From: jerabek at snf.stanford.edu (Paul Jerabek) Date: Tue, 9 Nov 2004 09:58:53 -0800 (PST) Subject: Micronic shutdown Message-ID: Micronic mask writer is back on the line. Improperly mounted Y-axis shaft cover was rubbing against the shaft. -Paul From rcrane at snf.stanford.edu Tue Nov 9 12:24:51 2004 From: rcrane at snf.stanford.edu (Dick Crane) Date: Tue, 09 Nov 2004 12:24:51 -0800 Subject: Building Security Alert Message-ID: <41912793.298C5E50@snf.stanford.edu> Building dwellers and SNF labmembers Recently the emergency exits in the gas pad yard (CIS receiving) have been used at night and left open. Clearly this defeats the security requirements of the area. The exits alarms have been reactivated and will sound. If you have an emergency and must use the exit, please notify me (5-3665 or 650 851-3972) or the Department of Public Safety (3-9633 or 650 329-2413 or if the situation is life or property threatening, 9-911) so we will know the nature of the emergency, take action as required and relock the exits and secure the area. Thank you for your help, Dick Crane From rcrane at snf.stanford.edu Fri Nov 12 09:45:40 2004 From: rcrane at snf.stanford.edu (Dick Crane) Date: Fri, 12 Nov 2004 09:45:40 -0800 Subject: Nanocharacterization lab holiday schedule Message-ID: <4194F6C3.15116361@snf.stanford.edu> Lab users, This message concerns the Stanford Nanocharacterization Lab (SNL) holiday schedule. Thanks, Dick Crane FYI, during the general University winter closure (Dec 17 to Jan 3), the Stanford Nanocharacterization Lab will be open for business. We will be operating with a skeleton crew, however; full services will resume when the University re-opens as normal. We can do temporary manual overrides of the climate control to turn the heat back on in common areas when users are around. This means that if users or potential users are around during the winter break and would like to use the characterization equipment at SNL, they should make sure they are trained on the machines and have their keycards activated before the 17th. Contact information for training/equipment questions may be found on the website at: http://www.stanford.edu/group/snl/ Richard Chin Science & Engineering Associate Geballe Laboratory for Advanced Materials Stanford University McCullough 225 476 Lomita Mall Stanford, California 94305-4045 Tel: (650) 723-8142 FAX: (650) 723-3044 Email: rwchin at stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From shott at snf.stanford.edu Mon Nov 15 13:38:10 2004 From: shott at snf.stanford.edu (John Shott) Date: Mon, 15 Nov 2004 13:38:10 -0800 Subject: Missing a cell phone? Message-ID: <419921C2.8060201@snf.stanford.edu> SNF and CIS residents: I found an abandoned or lost Motorola cell phone in the building over the weekend ... and put it in a secure place so that it wouldn't disappear permanently. If you are missing a cell phone, please contact me ... John Shott CIS Room 129 725-3715 shott at snf.stanford.edu From sybae at stanford.edu Wed Nov 17 12:43:56 2004 From: sybae at stanford.edu (Seung-Young Bae) Date: Wed, 17 Nov 2004 12:43:56 -0800 Subject: ZnO thin film deposition Message-ID: <1100724236.419bb80c57c35@webmail.stanford.edu> Hi, Does anyone know some place that I can have ZnO thin film deposited? Either a company or University lab should be fine. Thanks, Seung-Young From maureen at cis.stanford.edu Thu Nov 18 18:32:22 2004 From: maureen at cis.stanford.edu (Maureen Rochford) Date: Thu, 18 Nov 2004 18:32:22 -0800 Subject: Food in CISX patio courtyard Message-ID: Please come out to the CISX patio courtyard if you are hungry. The SRC welcomes you to join the reception for hearty hors d'oeuvres. -- Maureen E. Rochford Stanford University Center for Integrated Systems 420 Via Palou Mall Stanford, CA 94305-4070 Phone: (650) 725-3627 Fax: (650) 725-0991 From mtang at snf.stanford.edu Fri Nov 19 09:15:46 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Fri, 19 Nov 2004 09:15:46 -0800 Subject: Remove materials before lab shutdown Message-ID: <419E2A42.5070002@snf.stanford.edu> Greetings everyone! Just a reminder that the annual lab shutdown is scheduled to start at 7 am on Friday, Dec. 17. Please remove any personal belongings that are not already stored in your personal lab bins. This means any wafers, wafer boxes, labware, etc. that you may keep in WIP storage or labware storage shelves. This also includes any other personal belongings that may be sitting on top of personal bins (masks, notebooks, etc.) And please remove anything that is of great value to you. There will be a lot of facilities and maintenance work done in the lab, so most every available surface will be covered and there will be a lot of contractors who may be moving things around. We will make every effort to ensure care is taken, but we cannot be responsible for damage or loss of personal items. Thanks for your attention, Your friendly, neighborhood SNF staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From rcrane at snf.stanford.edu Fri Nov 19 13:27:10 2004 From: rcrane at snf.stanford.edu (Dick Crane) Date: Fri, 19 Nov 2004 13:27:10 -0800 Subject: Chemical use this thanksgiving weekend Message-ID: <419E652E.8AB4A8F5@snf.stanford.edu> Labmembers, Please help the next wet bench user have enough chemicals this up coming, Thanksgiving Day weekend. This is a four day weekend so chemical supplies will run low by Sunday night. Please observe the recommended bath changing schedules and we should be OK. If you must change a bath, please check for an adequate supply of refill chemicals before dumping. Litho area: developer and photoresist refill supplies are in the yellow storage cabinet. Thanks for your help and have a good Thanksgiving Day, Dick From shott at stanford.edu Sun Nov 21 18:30:11 2004 From: shott at stanford.edu (John D Shott) Date: Sun, 21 Nov 2004 18:30:11 -0800 Subject: Coral servers restarted ... Message-ID: <1101090611.41a14f338c74d@webmail.stanford.edu> SNF Lab Members: We apologize for the Coral outage this afternoon ... I've just restarted the servers at about 6:25 P.M. California time. As luck would have it ... Bill Murray is on vacation and I was in midair on the way to Chicago. At this point, I don't know what caused the outage ... but hope that restarting the servers will get you back on the air. If you have further problems, call me at 650 575-2508. Thank you for your continued support, John O'Hare - The Windy City. From mtang at snf.stanford.edu Tue Nov 23 06:55:11 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Tue, 23 Nov 2004 06:55:11 -0800 Subject: A Thanksgiving Weekend Reminder: Chemicals Use Message-ID: <41A34F4F.4090102@snf.stanford.edu> Labmembers, Please help the next wet bench user have enough chemicals this up coming, Thanksgiving Day weekend. This is a four day weekend so chemical supplies will run low by Sunday night. Please observe the recommended bath changing schedules and we should be OK. If you must change a bath, please check for an adequate supply of refill chemicals before dumping. Litho area: developer and photoresist refill supplies are in the yellow storage cabinet. Thanks for your help and have a good Thanksgiving Day, Dick From mtang at snf.stanford.edu Tue Nov 23 14:37:14 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Tue, 23 Nov 2004 14:37:14 -0800 Subject: Gloves & Wipes moved Message-ID: <41A3BB9A.5010201@snf.stanford.edu> Hi everyone -- Just wanted to let you know that we have moved the gloves/wipes storage out of the chemicals pass-through area. Extra gloves & wipes are now stored on a wire rack shelf located in the service area behind the furnaces. This is to allow more space for empty chemical bottles in the pass-through area (so they don't come tumbling down onto Mike D and Dave C on Monday mornings.) Please respect the new labels (Uli is placing them now) which define the hazardous waste and empty bottle storage in the chemicals pass-through. Thanks! Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From sandrew at stanford.edu Fri Nov 26 16:04:12 2004 From: sandrew at stanford.edu (Scott D. Andrews) Date: Fri, 26 Nov 2004 16:04:12 -0800 (PST) Subject: University Oral Examination: Scott Andrews (Tuesday, December 7, 10:00AM) Message-ID: University Ph.D. Oral Examination Scott Andrews Department of Materials Science and Engineering Fabrication of Magnetic Nanopillars and X-ray Imaging of Spin-Transfer Phenomena Tuesday, December 7, 2004, 10:00 AM (Refreshments will be served at 9:45 AM) Center for Integrated Systems Annex (CISX), room 101 ABSTRACT Spintronics has generated much interest and research in recent years. Conventional technology uses the electron charge to store and transmit information. Novel devices with additional functionalities can be made using the quantum mechanical spin in addition to the electron charge. Potential spintronic applications include spin transistors, quantum computers, and magnetic random access memory (MRAM). Currently, giant magnetoresistance read heads, which transmit information using spin polarized currents, are used extensively in the magnetic storage industry. MRAM has started to impact the storage industry with its recent introduction to the consumer market. It is expected to compete with flash memory, and, to a lessor extent, dynamic random access memory (DRAM). MRAM does not deteriorate with use like flash but both are nonvolatile. MRAM's relatively fast speed will allow it to compete with DRAM in applications where information needs to be stored without a continuous power supply. Since MRAM and other spintronic applications are dependent on the interaction of spin polarized currents with magnetic materials, this phenomenon deserves further investigation in order to gain a more complete understanding. The main focus of this work is to investigate spin-transfer torque, a magnetic phenomenon in which spin polarized currents can be used to alter the magnetic state of a ferromagnet. This torque can be used as the dominant switching mechanism in systems where the current density is high. However, at low current densities, this effect is overpowered by the Oersted field, the classical magnetic field created by an electric current. Unlike the spin-transfer torque which is proportional to the current density, the Oersted field is proportional to the total current. Thus, for the spin-transfer torque to be dominant, small structures are necessary. In an attempt to meet the design criteria of samples that would carry high current density but low total current, holes were drilled with focused ion beam (FIB) into silicon nitride films and filled with a stack of two ferromagnets separated by a nonmagnetic spacer. These samples were analyzed using x-ray photoemission electron microspectroscopy (X-PEEM). Due to magnetic uniformity issues in these samples, two other structures were subsequently investigated. One uses a stencil method that allows easy variations of the exact materials chosen. However, this sample design has the disadvantage that the magnetic material that should be switched using the spin polarized currents is not localized to the pillar structure being tested. This creates extraneous GMR signals during electrical measurements. Another sample, which was fabricated with the help of Hitachi, was designed to isolate the magnetic materials to a small region and does not show the convolved signal during electrical measurements. Both of these samples were analyzed with a scanning transmission x-ray microscope (STXM). Using a pump-probe configuration, the time dependent effects of the spin-torque transfer were examined. In the last sample, spin-transfer torque, combined with conventional Oersted switching, was observed and analyzed. Such a direct observation of spin injection and its time characteristics has never been achieved previously. From amf at amfitzgerald.com Sun Nov 28 23:40:55 2004 From: amf at amfitzgerald.com (Alissa M. Fitzgerald) Date: Sun, 28 Nov 2004 23:40:55 -0800 Subject: MITCNC EVENT: "Transistors That Extend Moore's Law"; Dr. Chenming Hu; Dec.2, 7pm, Palo Alto Message-ID: I thought this might be of general interest; please forward to your colleagues. Best regards, Alissa ****** The MIT Club of Northern California Semiconductor Entrepreneurship Series presents: TRANSISTORS THAT EXTEND MOORE'S LAW: A Keynote Talk by Dr. Chenming Calvin Hu Date: Thursday, December 2, 2004 Event Time: 7:00 p.m. Registration/Networking: begins at 6:30PM Venue: Cooley Godward LLP Location: 3175 Hanover Street, Palo Alto, CA 94306 Directions: http://www.cooley.com/about/office_detail.aspx?OfficeID=000000132003 Cost: $20 preregistration/$30 at the door (includes food/beverage) Online registration at: http://www.mitcnc.org/www/Events_Single.asp?eventID=1049 Dr. Chenming Calvin Hu, our esteemed keynote speaker, will discuss transistor scaling trends, nanometer-era process windows, and reliability issues associated with new materials. Dr. Hu's pioneering role in the development of next generation technologies at TSMC and his experiences as a key figure in Silicon Valley's history will make this evening's program especially valuable for the semiconductor entrepreneur. Dr. Chenming Calvin Hu is currently the TSMC Distinguished Professor of Microelectronics in the EE&CS Department of UC Berkeley. Most recently he was the Chief Technology Officer of TSMC, Hsinchu, Taiwan, while on leave from UC Berkeley. He was founding chairman of Celestry Design Technologies, an IC design software company that was acquired by Cadence Design Systems in 2003. He leads the development of the BSIM transistor model for CMOS circuit simulation. He co-developed the FinFET, a new MOSFET structure that has allowed the IC industry to reset the record for smallest transistor several times and is expected to enable scaling to 10nm gate lengths. Please forward this event information to anyone who might be interested. From ychliu at stanford.edu Mon Nov 29 11:39:02 2004 From: ychliu at stanford.edu (Yaocheng Liu) Date: Mon, 29 Nov 2004 11:39:02 -0800 Subject: Ph.D. Oral Examination -- Yaocheng Liu (Monday, December 6, 2004, 9:30AM) Message-ID: <00e401c4d64b$14c14c00$5f6340ab@plumbpc5> Silicon and Germanium Crystallization Techniques for Advanced Device Applications University Oral Examination Yaocheng Liu Department of Materials Science and Engineering, Stanford University Monday, December 6, 2004, 9:30AM (Refreshments will be served at 9:15AM) Cypress Auditorium, Paul Allen Center for Integrated Systems (CIS-X 101) Tremendous challenges exist as semiconductor devices are scaled down to the nanometer regime. New materials and novel devices are introduced to solve various problems. Three-dimensional integrated circuits are believed to be one of the approaches to reduce the interconnect delay. Metal-induced crystallization (MIC) of amorphous Si is of interest because it can produce high-quality Si crystals with low-temperature processing, enabling the monolithic integration of multilevel devices and circuits. A two-step MIC process was developed to make single-crystal Si pillars on insulator by forming a NiSi2 template in the first step and crystallizing the amorphous Si by NiSi2-mediated solid-phase epitaxy (SPE) in the second step. TEM study clearly showed the quality improvement over the traditional MIC process. This part of work will be covered briefly. The rest of the presentation will focus on the fabrication of Ge-on-insulator (GeOI) substrates and devices. Ge is of interest due to its high carrier mobility and excellent optoelectronic properties. GeOI is desired to achieve high device performance and to solve the process problems traditionally associated with bulk Ge wafers. High-quality Ge crystals and Ge-on-insulator structures were grown on Si substrates using a novel rapid melt growth (RMG) technique that integrates the key elements in CZ growth - seeding, melting, epitaxy and defect necking. Growth velocity and nucleation rate were calculated to determine the RMG process window. Self-aligned microcrucibles were created with low-pressure CVD SiO2 to hold the Ge liquid during the RMG annealing. Material characterization showed a very low defect density for the RMG GeOI structures. The Ge film was relaxed, with its orientation controlled by the Si substrate. Ultra-thin film GeOI was obtained. The RMG process was simple and robust. P-channel MOSFETs and p-i-n photodetectors were fabricated with the as-prepared GeOI substrates. The effective hole mobility at 0.4MV/cm effective E-field was estimated to be 120cm2/Vs, which is 20% higher than Si universal mobility at the same electrical field. Tri-gate MOS transistors were also fabricated using Ge fins on insulator grown by the same RMG technique. The Ge photodetectors were functional at wavelengths of both 850nm and 1550nm, showing high responsivity and fast impulse response. These results indicated that the RMG GeOI substrates were well suited for device fabrication. With the RMG technology, Ge devices can be easily integrated into a Si IC fabrication process. Finally a new theory, growth-induced barrier lowering (GIBL), is proposed to understand the phenomena corresponding to rapid melt growth and solid-phase epitaxy. Thermodynamic derivations show that the energy barrier for nucleation is reduced when the growth front impinges on some of the sub-critical embryos, making it possible for the embryos to grow and form defects. This theory can explain the quality difference between RMG and SPE. It can also explain why SPE ultra-thin films are often defective while RMG can produce high-quality films with thickness of nanometer scale. -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Yaocheng_Liu_Abstract.pdf Type: application/pdf Size: 67019 bytes Desc: not available URL: From utkan at stanford.edu Mon Nov 29 17:26:51 2004 From: utkan at stanford.edu (Utkan Demirci) Date: Mon, 29 Nov 2004 17:26:51 -0800 Subject: Utkan Demirci: Orals Abstract for Tuesday 30th Nov. Message-ID: <1101778011.41abcc5ba6f83@webmail.stanford.edu> ACOUSTIC GENERATION OF FEMTOLITER TO PICOLITER DROPLETS USING 2-D MICROMACHINED MICRODROPLET EJECTOR ARRAYS Utkan Demirci, Department of Electrical Engineering Location: E.L. Ginzton Lab. AP#200 30th November 2004 at 3pm Abstract: There is growing demand in the fields of semiconductor manufacturing and biotechnology to reliably generate repeatable, uniform, picoliter-size fluid droplets. Such droplets can be generated using MEMS (Micro-Electro-Mechanical Systems) technology. We propose 2-D micromachined microdroplet ejector arrays for environmentally benign deposition of photoresist and other spin-on materials, such as low-k and high-k dielectrics used in integrated circuit (IC) manufacturing. Direct deposition of these chemicals will reduce waste and production cost. These ejectors are chemically compatible with the materials used in IC manufacturing, and do not harm fluids that are heat or pressure sensitive. Moreover, these ejectors are attractive to biomedicine and biotechnology for droplet generation in applications such as printing of DNA or protein assays and drug testing. Two novel methods for generating millions of droplets per second using acoustically actuated 2-D micromachined microdroplet ejector arrays will be presented. First, membrane based 2-D micromachined ejector arrays will be introduced. Each element of a membrane based 2-D ejector array consists of a flexurally vibrating circular membrane on one face of a cylindrical fluid reservoir. The membrane has an orifice at the center. A piezoelectric transducer generating ultrasonic waves, located at the open face of the reservoir, actuates the membrane and droplets are ejected through the membrane orifice. The ejectors operated most efficiently at 1.2 MHz and generated 3-7 ?m diameter droplets. Second, acoustic focus based 2-D micromachined ejector arrays will be demonstrated. The radiation pressure associated with the acoustic beam overcomes the surface tension force, and releases droplets into air in every actuation cycle. The ejectors operated most efficiently at 34.7 MHz, and generated 28 ?m diameter droplets in both drop-on-demand and continuous modes of operation, as predicted by the finite element analysis. Photoresist, water, isopropanol, ethyl alcohol, and acetone were ejected from a 4x4 2-D micromachined ejector array. Silicon wafer surfaces were covered by photoresist using these ejector arrays. The theory of operation, fabrication and the experimental results obtained with novel acoustically actuated 2-D micromachined microdroplet ejector arrays will be presented. ----- End forwarded message ----- -------------- next part -------------- An HTML attachment was scrubbed... URL: From nishiy at stanford.edu Tue Nov 30 16:32:46 2004 From: nishiy at stanford.edu (Yoshio Nishi) Date: Tue, 30 Nov 2004 16:32:46 -0800 Subject: New 2005 SNF Fee Schedule Message-ID: To Industrial and Academic Users of SNF, I would like to thank those of you who attended yesterday's faculty advisory meeting which included a number of executive attendees from the industrial user community. There were many good suggestions and continued discussion about the serious financial shortfall of our Lab. As we discussed, our Lab is running at a deficit of $60k per month on $300,000 of revenue. Paul Rissman and the SNF staff have investigated several methods to reduce costs and to raise the fab usage rates to increase revenue and balance the budget. Cost reduction measures take time, and unfortunately we simply cannot continue to run any longer with such a serious shortfall. At this point we must make difficult decisions and move forward. As such, I have decided that effective January 1, 2005 we will increase the monthly cap for academic users from $1656 to $1940 (21.33 hours to 25 hours cap) and for the industrial users from $3312 to $4657.50 (21.33 hours to 30 hours cap). The hourly charge for equipment usage will remain at its present level. In addition, we will institute a "notch cap" for all users. The notch cap means we will charge at 10% the normal rate for more than 160 hours of equipment usage in a given month. The notch cap may not generate significant revenue, but we expect it will curb abuses of the cap system that many of you have complained about. We anticipate the notch cap will make equipment more readily available for more labmembers. I hope that in the next four weeks, you can calculate the effect of this change on your monthly expenses and if necessary make changes to your plans. I understand only too well the difficulty that this rate change presents: my own budget and project goals for my research group will likewise be affected. Please understand that even with this rate increase, at the current rate of lab usage, we expect that the budget will still not become balanced this year. I want to assure you that several other additional, and difficult, cost-cutting measures are being taken which should allow us to reach a balanced budget in FY2006. However, we absolutely need to get our organization in order financially so we can continue to provide you with the resources you need to get your work done. I trust that you value SNF as a resource and a community as much as I do. I ask for your patience and understanding during this difficult period and I appreciate your continued support. Yoshio Nishi -------------- next part -------------- An HTML attachment was scrubbed... URL: