From lwchang at stanford.edu Fri Dec 2 01:15:34 2005 From: lwchang at stanford.edu (Li-Wen Chang) Date: Fri, 2 Dec 2005 01:15:34 -0800 Subject: Metals with small grain size Message-ID: <200512020915.jB29Fgdj022507@smtp3.Stanford.EDU> Dear labmembers, I'm trying to use innotec to do metal deposition and am wondering if anyone knows what kind of metal I should choose for smaller grain size. I used Al but the grain size seemed to be very large and resulted in uneven side walls. If anyone has some experience in this, please let me know. Any suggestion is appreciated. Thank you, Li-Wen Chang -------------- next part -------------- An HTML attachment was scrubbed... URL: From rohank at stanford.edu Mon Dec 5 12:47:45 2005 From: rohank at stanford.edu (Rohan D. Kekatpure) Date: Mon, 05 Dec 2005 12:47:45 -0800 Subject: Polymer removal Message-ID: <6.0.1.1.2.20051205124650.01e9b8e0@rohank.pobox.stanford.edu> Dear all, I am etching oxide films (to a depth of about 0.5 um) using a CHF3 + O2 chemistry and a negative tone Ebeam resist mask. To get a high selectivity between the resist and Oxide, I am using a large CHF3::O2 ratio (100sccm:3sccm). Quite predictably, this is leading to large amounts of (hardened, fluorinated) polymer deposition upon my film. My question is related to removal of this polymer. I have tried post etch O2-plasma treatment @ 150W for 5min in DryTek4 followed by a fresh, hot (bubbling!) pirhana for 20 mins. But the polymer has hardly budged as seen in the SEMs (attached with this mail). (a) Is there any other chemistry that I can use to remove the polymer? (b) Is there any other etch chemistry that will not lead to polymer? The important consideration for me is selectivity between the resist and the oxide. I have no particular concern with regard to straight sidewalls or exact stopping on underlying substrate - an over-etch is perfectly okay. Thanks very much for your help. -Rohan -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: polymer_deposition.pdf Type: application/pdf Size: 586430 bytes Desc: not available URL: -------------- next part -------------- An HTML attachment was scrubbed... URL: From wangzhen at stanford.edu Mon Dec 5 15:06:51 2005 From: wangzhen at stanford.edu (Zheng Wang) Date: Mon, 5 Dec 2005 15:06:51 -0800 Subject: PhD DISSERTATION DEFENSE: Nonreciprocal Photonic Crystal Circuits Message-ID: <200512052308.jB5N86BT017535@smtp2.Stanford.EDU> DEPARTMENT OF APPLIED PHYSICS UNIVERSITY PhD DISSERTATION DEFENSE Zheng Wang Advisor: Professor S. Fan Title: Nonreciprocal Photonic Crystal Circuits - Facilitating Large-Scale Optical Integration Wednesday December 7th, 2005 at 4:15 PM (Refreshments at 4:00 pm) CIS-X Auditorium, Room 101 ABSTRACT Miniaturization of nonreciprocal devices is important for large-scale integration of optical information processing devices. Here, we introduce an ultra-compact, single-wavelength-scale optical circulator formed of magneto-optical resonances. Such device can be created by infiltration in two-dimensional silicon/air photonic crystals. Numerical simulations with finite-difference time-domain methods demonstrate a circulator with an isolation ratio greater than 40dB over a broad bandwidth. The key to obtain large nonreciprocity in photonic circuits is to design the spatial arrangement of the magnetic domains closely following the modal cross product. This principle is further illustrated in examples of nonreciprocal waveguides. In addition, we demonstrate that time-reversal symmetry breaking can be used to mitigate some of the effects of the fabrication-related disorders. Specifically, surface roughness can be well tolerated in photonic crystal channel add/drop filters, which is particularly prone to structural disorders. And finally, since the non-reciprocal behaviors of these devices are closely related to the domain structures, we envision the use of reconfigurable magnetization as a mechanism to accomplish reprogrammable optical circuits. From rissman at stanford.edu Thu Dec 8 15:03:10 2005 From: rissman at stanford.edu (Paul Rissman) Date: Thu, 08 Dec 2005 15:03:10 -0800 Subject: CIS/SNF PARTY! - 12/14 - 2-4 pm Message-ID: <6.2.1.2.2.20051208150115.02e21920@rissman.pobox.stanford.edu> Hi All, It is time for the Annual CIS/SNF party this Wednesday, December 14th, 2 - 4 pm. Come and join us celebrate the end of 2005 and welcome in 2006 in the office area to the south of the lab (opposite lithography). We will have FOOD and drinks, games and, of course, SNF wafer toss - the one time it is ok to handle wafers with your bare hands. See if you can guess the SNF staff member based on their 3 favorites or based on their dream car. Mary might even have some cheesy prizes for the winners. It should be a great time. We look forward to seeing you all there! CIS/SNF Staff From rcrane at stanford.edu Fri Dec 9 08:20:13 2005 From: rcrane at stanford.edu (Dick Crane) Date: Fri, 09 Dec 2005 08:20:13 -0800 Subject: CIS/CISX Holiday shutdown Message-ID: <4399AEBD.8000804@stanford.edu> CIS/CISX and lab dwellers, It is time for the annual holiday shutdown. CIS and CISX buildings will be locked and heating turned off from 5:00 PM, Friday, 12/16/05 until 6:00 AM, Tuesday, 1/3/06. US mail, campus mail and delivery services (UPS, FedEx, etc.) will not be available during the shutdown. CIS receiving yard will be closed and locked. Please do not unlock or prop open outside doors. There will a building wide electrical power shutdown from 0700 to 1600 on Monday, 12/19/05. Please plan accordingly. Computers and lab equipment should be turned off. The compressed dry air (CDA) system will be off line from 0700, 12/20/05 through 1600, 12/21/05. Check if your equipment requires CDA and plan accordingly. In case of a labor strike, the power shutdown and the CDA shutdown may be postponed. I will send an email and post fliers indicating current shutdown status. Summary: Building locked 12/16/05 @ 1700-1/3/06 @ 0700. Building heat off 12/16/05-1/3/06. Electrical power off 12/19/05, 0700-1600. CDA off 12/20/05 0700-12/21/05 1600. No mail or delivery services 12/17/05-1/2/06. Thanks and have a pleasant holiday, Dick 5-3665 From kenney at slac.stanford.edu Fri Dec 9 12:36:14 2005 From: kenney at slac.stanford.edu (Chris Kenney) Date: Fri, 9 Dec 2005 12:36:14 -0800 (PST) Subject: WET BENCH CASSETTES! Message-ID: Right now there are NO metal cassettes at the WBMETAL. There is ONE nonmetal cassette at WBNONMETAL and about half the normal compliment at WBDIFF During the last week people have contaminated several nonmetal cassettes by using them at WBMETAL and in LITHO. There are some SHORT-TERM legitimate uses of these cassettes away from their proper home, but please return them promptly and don't use them improperly. Thanks From beinnmuir at stanford.edu Mon Dec 12 12:02:16 2005 From: beinnmuir at stanford.edu (Beinn Muir) Date: Mon, 12 Dec 2005 12:02:16 -0800 Subject: Pt resistive heating and IR camera Message-ID: <1134417736.439dd7489e67b@webmail.stanford.edu> Dear Labmembers, I am building a device which uses a Pt/Ti resistive heating element. The Pt features are 100 microns wide and 50-100 nm thick (with a 5 nm Ti adhesion layer), on native silicon dioxide. I have two questions and I would be very grateful for any help you can give me: 1. Do any of you have experience working with Pt heating elements? I would really like to discuss the working details of such a device. I would also be interested in talking to anyone who has carried out a theoretical analysis of a resistive heating element. 2. Does anyone have access to an IR camera? I would like to be able to monitor the heating effect wrt the applied voltage. I will try and implement a thermocouple to measure the temperature, but spacial resolution would be very useful. Best regards, Beinn Muir From kcrabb at stanford.edu Mon Dec 12 16:21:15 2005 From: kcrabb at stanford.edu (Kevin Crabb) Date: Mon, 12 Dec 2005 16:21:15 -0800 Subject: 2" wafers to borrow? In-Reply-To: Message-ID: Hello All, I am in urgent need of two, 2" silicon wafers. Does anyone have any that I could have? I would be happy to order replacements, or otherwise compensate you for them. The thickness and/or resistivity is not important. If you have any you could spare, please let me know ASAP. Thank you, Kevin kcrabb at stanford.edu From mtang at stanford.edu Mon Dec 12 16:34:49 2005 From: mtang at stanford.edu (Mary Tang) Date: Mon, 12 Dec 2005 16:34:49 -0800 Subject: Isopropanol warning Message-ID: <439E1729.1070304@stanford.edu> Greetings -- An astute labmember noticed and reported that the labels on the isopropanol bottles looked different. It turns out that a different grade of isopropanol was delivered last week (although the standard material was ordered). The material we now have is not CMOS-grade, although it is low-particulate/cleanroom (LP) certified. Unfortunately, there is no more CMOS grade isopropanol left in the lab right now. Since most people do not seem to require CMOS-grade isopropanol for processing, we have decided to place the LP-certified material in the lab, just for now. CMOS-grade material will be ordered as soon as possible. Once it arrives, all LP-certified material will be removed and all squeeze- and spray-bottles will be replaced. Apologies for the inconvenience -- You lab staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From artyjamo at comcast.net Tue Dec 13 09:32:43 2005 From: artyjamo at comcast.net (artyjamo at comcast.net) Date: Tue, 13 Dec 2005 17:32:43 +0000 Subject: Tylan 1 open @ 9:30 Message-ID: <121320051732.19952.439F05BB000D764600004DF0220588644201030E06979B9D0E@comcast.net> Sorry for the late notice, but I will not need/use my reservation at 9:30 AM on Tylan 1 today. I am at the office & will ask Maurice to remove my reservation. Thanks, Aleta (ajamo) -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Tue Dec 13 10:54:04 2005 From: mtang at stanford.edu (Mary Tang) Date: Tue, 13 Dec 2005 10:54:04 -0800 Subject: Annual Lab cleanup! Message-ID: <439F18CC.6000709@stanford.edu> Hi everyone -- Just a reminder: please remove any personal items that are not stored in personal bins. This includes items stored WIP shelves and on top of bins. This includes wafers, wafer boxes and cassettes, personal lab ware (beakers, teflon cassettes, wafer holders), lab notebooks, etc. (The only exception is labeled, personal labware stored on the designated shelves at wbgeneral). Any personal items left outside of personal bins after lab shutdown will be removed from the lab. (Sorry, but we do this every year, to ensure that nothing accumulates or gets left permanently in the lab.) If you have something in the lab, but cannot get to it, let us know what and where it is and we can store it for you. Thanks for your attention -- Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From goksenin at stanford.edu Tue Dec 13 13:40:16 2005 From: goksenin at stanford.edu (Goksen Yaralioglu) Date: Tue, 13 Dec 2005 13:40:16 -0800 Subject: proceedings of ASME Message-ID: <6.2.5.6.2.20051213133802.02ec2d40@stanford.edu> Hello All, I would like to check couple of papers in the proceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Syn. and App. 2004. Does anyone have it? Thanks Goksen --------------------------------------------------- Goksen G. Yaralioglu, PhD Stanford University Ginzton Laboratory Stanford CA, 94305-4088 e-mail: goksenin at stanford.edu office tel: (650) 725 49 42 --------------------------------------------------- From hsanda at stanford.edu Tue Dec 13 14:38:45 2005 From: hsanda at stanford.edu (Hiroyuki Sanda) Date: Tue, 13 Dec 2005 14:38:45 -0800 Subject: wafer bending machine Message-ID: <1134513525.439f4d7550ea4@webmail.stanford.edu> Hi All, Does somebody know where the wafer bending machine is now or who uses it. The equipment was originally made by Ken Uchida, and Dan Grupp prbably used it for a while. I will not be able to contact him until January. I would appreciate any information. Thanks, Hiroyuki Sanda From rissman at stanford.edu Wed Dec 14 09:14:17 2005 From: rissman at stanford.edu (Paul Rissman) Date: Wed, 14 Dec 2005 09:14:17 -0800 Subject: CIS/SNF PARTY! - 12/14 - 2-4 pm Message-ID: <6.2.1.2.2.20051214091325.02990db0@rissman.pobox.stanford.edu> REMINDER - TODAY!!!! PLEASE JOIN US --------------------------------------------------------------------------------------------------------------------------------------------------------- Hi All, It is time for the Annual CIS/SNF party this Wednesday, December 14th, 2 - 4 pm. Come and join us celebrate the end of 2005 and welcome in 2006 in the office area to the south of the lab (opposite lithography). We will have FOOD and drinks, games and, of course, SNF wafer toss - the one time it is ok to handle wafers with your bare hands. See if you can guess the CIS/SNF staff member based on their 3 favorites or based on their dream car. Mary might even have some cheesy prizes for the winners. It should be a great time. We look forward to seeing you all there! CIS/SNF Staff From rcrane at stanford.edu Wed Dec 14 13:14:47 2005 From: rcrane at stanford.edu (Dick Crane) Date: Wed, 14 Dec 2005 13:14:47 -0800 Subject: Lab evacuation 12/14/05 Message-ID: <43A08B47.2000600@stanford.edu> Lab users, Around 1015 today, 12/14/05, the fab was evacuated due to fumes present in the litho area. A bottle containing about one liter of methyl isobutyl ketone was dropped and broken near the lithosolv bench. SNF staff was notified. Ketones have a strong odor and are eye, skin and respiratory irritants. The fab was evacuated in an orderly fashion, SNF staff contained and removed the spilled material. Lingering fumes required some time to dissipate. The fab was fully reopened for use by 1150. Users, please remember to notify staff in case of a spill and be sure to identify the spilled material. Thank you Mario for your quick action in safely containing the spill. Sorry for brief closure that interrupted your processing, Dick From rohank at stanford.edu Wed Dec 14 21:19:48 2005 From: rohank at stanford.edu (Rohan D. Kekatpure) Date: Wed, 14 Dec 2005 21:19:48 -0800 Subject: Polymer removal Message-ID: <6.0.1.1.2.20051214203212.01eb6eb0@rohank.pobox.stanford.edu> Dear Labmembers, Last week I had queried regarding possible remedies for removing/reducing polymer build-up during oxide etch using CHF3/O2 chemistry. My sincere thanks to all who responded. I got several replies and the stated solutions ranged from using equipments/chemicals to remove the built-up polymer to changing the etch chemistry to eliminate the build up. I also became aware that there are several labmembers who are facing similar problems (most of whom are in the 'gold contaminated' processing group). Although I havent tried all the processes myself, I will attempt to list the various responses I got. 1. GASONICS is designed specifically for resist strip and polymer removal and should work pretty well. However, the processes have to be clean/semiclean. In some instances it has worked where MATRIX has failed. (MATRIX did not work in my case). 2. Adding a little Argon to the CHF3/O2 etch plasma gives a more 'physical' (sputter) component to the etch plasma and reduces the polymer build-up. However this comes at the price of selectivity to the resist. 3. Increasing the percentage of O2 in the CHF3/O2 mixture reduces the rate of polymer build-up. Again, O2 addition causes reduction in selectivity by eating off the resist. However, this is extremely effective if you can get a hard mask for your etching., chrome. 4. Changing the etch chemistry: From the little reading that I did, I gathered that polymer formation is a decreasing function of F:C ratio. In order to reduce the polymer formation use chemistry with higher F:C ratio. CF4 (with or without O2) does not form polymer, and C2F6 has a substantially lesser rate of polymer deposition than CHF3. If anybody is further interested please contact me for the specific info. Thanks once again to all labmembers for their very helpful responses. Sincerely, Rohan From artyjamo at comcast.net Wed Dec 14 19:43:02 2005 From: artyjamo at comcast.net (artyjamo at comcast.net) Date: Thu, 15 Dec 2005 03:43:02 +0000 Subject: Tylan 1 12/15 reservation deleted Message-ID: <121520050343.28338.43A0E64600044A3000006EB2220588644201030E06979B9D0E@comcast.net> I deleted my 8 hour reservation on tylan 1 that started at 9:30 AM. Thanks, - (ajamo) From jwc at snf.stanford.edu Thu Dec 15 09:30:14 2005 From: jwc at snf.stanford.edu (James Conway) Date: Thu, 15 Dec 2005 09:30:14 -0800 Subject: Polymer removal In-Reply-To: <6.0.1.1.2.20051214203212.01eb6eb0@rohank.pobox.stanford.edu> References: <6.0.1.1.2.20051214203212.01eb6eb0@rohank.pobox.stanford.edu> Message-ID: <43A1A826.8010202@snf.stanford.edu> Rohan and Lab members: Here are links to the two materials we discussed recently in the Lab: [SVC PRX-127 which we have here in the lab. ] Here is information on the PRX-120 by SVC: I used this product before when removing polymer residues on ZNS and ITO RIE etch processes using Ch4+H2 chemistries. [The link to the microchem.de pages for PRX-120] Click this link to see the images that did not copy on my past below. FORTGESCHRITTENER POSITIV PHOTORESIST STRIPPER UND PLASMA?TZ POLYMER REMOVER F?R KUPFERMETALL- BESCHICHTUNG PRX-120^(TM) is a high performance, non-corrosive positive photoresist stripper developed by SVC Laboratories (patent pending). Effective on hard-to-remove, heavy ion implanted, hard baked, and plasma etched resist. PRX-120^(TM) is designed for sub-half-micron critical geometries. Formulated to effortlessly remove cross-linked polymers and organometallic residues left after plasma etch processes. PRX-120^(TM) is compatible with corrosion sensitive metal substrates. PRX-120^(TM) has outperformed all existing strippers and post etch polymer cleaners based on independent studies and laboratory evalutions. Features and Advantages * complete removal of via, poly, and metal etch residues * rapid stripping of x-linked photoresists * no CD loss (metal undercut) * no flaking * low operation temperature (50 - 90?C) * 100% water soluble and biodegradable * non-flammable, non-toxic, non-hazardous * non-corrosive to sensitive alloys * no post strip rinse required - direct DI rinse * operator save * very stable with 24 month shelf life * no unpleasant odor * very low VOC emission * NFPA hazard code: H=1 F=1 R=0 TiN / AI-Si-Cu / Ti (P5000E metal etcher + ashing chamber) prx120_1.jpg (20476 Byte) before strip prx120_2.jpg (21058 Byte) PRX-120, 70?C, 20 minutes immersion TiN / AI-Si-Cu / Ti (DPS + ashing chamber) prx120_3.jpg (23336 Byte) before strip prx120_4.jpg (21927 Byte) PRX-120, 70?C, 20 minutes immersion pack size: 4 US gallon boxes ------------------------------------------------------------------------ ----back to top <#top>----Home ----Products ----Contact ---- ------------------------------------------------------------------------ ? 2002 by micro resist technology Rohan D. Kekatpure wrote: > Dear Labmembers, > > Last week I had queried regarding possible remedies for > removing/reducing polymer build-up during oxide etch using CHF3/O2 > chemistry. My sincere thanks to all who responded. I got several > replies and the stated solutions ranged from using > equipments/chemicals to remove the built-up polymer to changing the > etch chemistry to eliminate the build up. I also became aware that > there are several labmembers who are facing similar problems (most of > whom are in the 'gold contaminated' processing group). Although I > havent tried all the processes myself, I will attempt to list the > various responses I got. > > 1. GASONICS is designed specifically for resist strip and polymer > removal and should work pretty well. However, the processes have to be > clean/semiclean. In some instances it has worked where MATRIX has > failed. (MATRIX did not work in my case). > > 2. Adding a little Argon to the CHF3/O2 etch plasma gives a more > 'physical' (sputter) component to the etch plasma and reduces the > polymer build-up. However this comes at the price of selectivity to > the resist. > > 3. Increasing the percentage of O2 in the CHF3/O2 mixture reduces the > rate of polymer build-up. Again, O2 addition causes reduction in > selectivity by eating off the resist. However, this is extremely > effective if you can get a hard mask for your etching., chrome. > > 4. Changing the etch chemistry: From the little reading that I did, I > gathered that polymer formation is a decreasing function of F:C ratio. > In order to reduce the polymer formation use chemistry with higher F:C > ratio. CF4 (with or without O2) does not form polymer, and C2F6 has a > substantially lesser rate of polymer deposition than CHF3. > > If anybody is further interested please contact me for the specific info. > > Thanks once again to all labmembers for their very helpful responses. > > Sincerely, > Rohan > -------------- next part -------------- An HTML attachment was scrubbed... URL: From panjun at stanford.edu Wed Dec 21 21:59:02 2005 From: panjun at stanford.edu (Jun Pan) Date: Wed, 21 Dec 2005 21:59:02 -0800 Subject: Photomask Message-ID: <200512220558.jBM5wxt9031412@smtp3.Stanford.EDU> Dear labmembers, I need a mask for optical lithography urgently during this winter break, and am looking for any vendor who can provide the mask quickly. The resolution requirement is not high, since the minimum feature is about 20 micron. Your suggestions are greatly appreciated. Happy holiday, Jun