From mager at stanford.edu Fri Jul 1 12:15:13 2005 From: mager at stanford.edu (Morgan Mager) Date: Fri, 1 Jul 2005 12:15:13 -0700 Subject: Adhesion layer question Message-ID: <1120245313.42c596417924b@webmail.stanford.edu> Hi, I have a process where I want to deposit gold contact pads on a silicon surface, but I can't use Ti or Cr for the adhesion layer. I can't use Ti because my process subsequently involves a TMAH etch and I've heard that TMAH attacks Ti. And I can't use Cr because my process later involves stripping a different Cr layer. Does anyone know of another adhesion material for Au that isn't attacked by TMAH or chrome etchant? Thanks. -Morgan From kone at stanford.edu Fri Jul 1 12:34:55 2005 From: kone at stanford.edu (Amy Lee) Date: Fri, 1 Jul 2005 12:34:55 -0700 Subject: Spare glass wafers Message-ID: <1120246495.42c59adf6afbe@webmail.stanford.edu> Does anybody have any extra glass wafers they'd be willing to share until the SNF gets more in? A couple of design groups in the ME342 MEMS class need to use them for their projects and any help would be greatly appreciated. Thanks! Amy From colby.bellew at sri.com Tue Jul 5 08:14:41 2005 From: colby.bellew at sri.com (Colby Bellew) Date: Tue, 05 Jul 2005 08:14:41 -0700 Subject: Magnets and shadow masks Message-ID: <42CAA3E1.5050900@sri.com> I was wondering if anyone has any experience or information about using magnets to hold shadow masks in place. Thank you in advance, Colby Bellew From rcrane at snf.stanford.edu Tue Jul 5 09:53:49 2005 From: rcrane at snf.stanford.edu (Dick Crane) Date: Tue, 05 Jul 2005 09:53:49 -0700 Subject: Furnace area shutdown August 15 Message-ID: <42CABB1D.5080601@snf.stanford.edu> Fab users, a friendly reminder Furnace area disruption alert, August 15, 2005, two weeks duration, The next step to modernize the diffusion furnaces will happen this summer. Tylan bank 4 will be replaced by Thermco Bank 2. This upgrade will require a shutdown of thermco furnace bank 1 and tylan banks 2, 3, and 4 for two weeks starting around August 15. I believe the two weeks quoted is generous and the actual time may be less than 1 1/2 weeks. This schedule should avoid conflict with IEDM and MEMS conference paper deadlines and has the support of Mechanical Engineering Dept. and the Solid State and Photonics Labs. Please plan ahead for your furnace needs. The process group has located possible alternative furnace resources. More information will follow. Thank you for your patience and support, Dick Details: The Thermco Bank 2 installation requires the bank 1-4 process and house gases to be turned off and lines purge to allow repositioning of existing gas lines and adding a few new tie-ins. The existing Tylan furnace can not be moved until the gas lines are cut. Since the toxic and house gases are regulated by Santa Clara County Building and Environmental Departments, all work must be tested and inspected according to their timetable. We will complete as much preliminary work as possible prior to shutting down gases. To minimize the downtime, we will be installing a new valve box servicing the toxic gas lines. Once installed, this action will allow the other furnaces to operate without concern of future Thermco Bank 2 installation activities. This action will affect the following tubes: (bank1) thermco1, thermco2, thermconitride1, thermcopoly1, (bank2) tylan5 (boron), tylan6 (phosphorous), teos2, tylansige, (bank3) tylanpoly, tylannitride, tylanbpsg, tylanfga, (bank4) tystar, teos. Tylan bank 1, the tylan oxidation furnaces, will not be affected by this action. -------------- next part -------------- An HTML attachment was scrubbed... URL: From mahnaz at snf.stanford.edu Wed Jul 6 17:42:23 2005 From: mahnaz at snf.stanford.edu (Mahnaz Mansourpour) Date: Wed, 06 Jul 2005 17:42:23 -0700 Subject: Laurell Message-ID: <42CC7A6F.1090908@snf.stanford.edu> Sorry to send it out to you all, the Laurell email gives me an error. Hello all, I like to let you know that when you enable the system the enable light will not come on, we are looking in to it. System is functioning just fine. I used it this morning. mahnaz From amf at amfitzgerald.com Fri Jul 8 12:18:51 2005 From: amf at amfitzgerald.com (Alissa M. Fitzgerald) Date: Fri, 8 Jul 2005 12:18:51 -0700 Subject: Next SNF User's Meeting: July 21, 4-5pm CIS Conference Room Message-ID: <20050708181739.157EB63053D@mailgate1.dslextreme.com> Greetings Labmembers, There will be a SNF user's meeting on Thursday July 21st, from 4-5pm in the CIS conference room. All are welcome to attend. This is intended to be a town-hall style meeting, where users can meet to discuss important lab issues, exchange information, and make suggestions. The lab is a community, make sure your voice is heard. Tentative Agenda (suggestions are welcome, please email me) - New moderator introduction - Upcoming furnace shutdown and second sourcing options - Batch consolidation services - Committee representation for industrial users - Problems/concerns - Ideas for future meetings, such as vendor/sales presentations, etc. Hope to see you there! Regards, Alissa Fitzgerald Alissa M. Fitzgerald, Ph.D. A.M. Fitzgerald & Associates, LLC Technical Consulting Services MEMS | Materials | Sensor Systems 655 Skyway Suite 118 San Carlos, CA 94070 (650) 592-6100 tel/fax www.amfitzgerald.com -------------- next part -------------- An HTML attachment was scrubbed... URL: From amf at amfitzgerald.com Mon Jul 11 13:33:37 2005 From: amf at amfitzgerald.com (Alissa M. Fitzgerald) Date: Mon, 11 Jul 2005 13:33:37 -0700 Subject: MITCNC Semiconductor Entrepreneurship Summer Mixer, Thur July 21 6pm, Palo Alto Message-ID: <20050711193217.7F9156300FD@mailgate1.dslextreme.com> Dear Colleagues, I thought this event might be of interest to you. Regards, Alissa Please join the MIT Club of Northern California and Cooley Godward for an evening of networking over good food and drinks with fellow semiconductor industry enthusiasts at Cooley's open-air courtyard in Palo Alto. This will be a great opportunity for entrepreneurs, industry professionals, VCs, service providers and others in the semiconductor community to relax, share ideas and reflect on topics discussed at our previous events. We thank you for your continuing support and look forward to seeing you. RSVP is required. Please reply online. Light hors d'oeuvres and drinks will be served, and there is no charge to attend. Free parking is available. This event is open to the public. RSVP: http://www.mitcnc.org/www/Events_Print.asp?EventID=1138 Date: 07/21/2005 Thu Time: 6:00pm Venue: Cooley Godward LLP Location: 3175 Hanover Street, Palo Alto Cost: Free Contact: klambert at cooley.com Thursday, July 21, 2005 6:00 - 8:30 PM From vidyagv at gmail.com Mon Jul 11 22:46:14 2005 From: vidyagv at gmail.com (Vidya V) Date: Mon, 11 Jul 2005 22:46:14 -0700 Subject: Etching Silicon with Nitride on it Message-ID: <616a357905071122464e28b275@mail.gmail.com> Hi , I am trying to etch Silicon which is deposited on silicon nitride using HF:HNO3:DI water (Isotropic etch). I would like to protect my nitride layer beneath my silicon while etching.(I have deposited my silicon using laser ablation). I had used gold-chrome layer to protect my nitride, but the problem is that my silicon doesnt stick properly on gold. Can anyone suggest an etch stop for silicon nitirde while using the isotropic etchant? regards, Vidya From jimkruger at yahoo.com Tue Jul 12 06:27:22 2005 From: jimkruger at yahoo.com (jim kruger) Date: Tue, 12 Jul 2005 06:27:22 -0700 (PDT) Subject: Etching Silicon with Nitride on it In-Reply-To: <616a357905071122464e28b275@mail.gmail.com> Message-ID: <20050712132722.23058.qmail@web40903.mail.yahoo.com> I have had good experience recently using only Cr on nitride2 to stop HF-Nitric-Acetic. 200 A Cr seemed to work OK with both H:N:A 5-2-3 (very fast for Si) and 5-2-13 (much slower). I recommend verification before committing critcal parts. KOH would probaby etch the laser deposited Si anisotropically, perhaps with better selectivity to nitride2. You did not specify which nitride you wish to protect. jimkruger --- Vidya V wrote: > Hi , > I am trying to etch Silicon which is deposited on > silicon nitride > using HF:HNO3:DI water (Isotropic etch). I would > like to protect my > nitride layer beneath my silicon while etching.(I > have deposited my > silicon using laser ablation). I had used > gold-chrome layer to protect > my nitride, but the problem is that my silicon > doesnt stick properly > on gold. Can anyone suggest an etch stop for silicon > nitirde while > using the isotropic etchant? > regards, > Vidya > ____________________________________________________ Sell on Yahoo! Auctions ? no fees. Bid on great items. http://auctions.yahoo.com/ From mtang at snf.stanford.edu Tue Jul 12 08:02:53 2005 From: mtang at snf.stanford.edu (Mary Tang) Date: Tue, 12 Jul 2005 08:02:53 -0700 Subject: New CAD PC & MEMulator CAD program Message-ID: <42D3DB9D.1040905@snf.stanford.edu> Hi everyone -- I'm happy to announce that there is a new PC now in service in the CAD room. Thanks to the generous contributions of several labmember groups (and coordinated by Dan Grupp), we now have a nice, up-to-date PC for your CAD work. And, thanks to Dan's efforts again, we were able to acquire a nicely discounted, one-year license for MEMulator, the Coventor product that allows you to model and visualize in 3-D what you've designed in 2-D. The cross-sections are process-based and to scale. These ought to great for illustrating process flows (for more information, check out the webpage at: http://www.coventor.com/memulator/index.html). The new CAD PC also includes the latest LEdit 11.1 with the added ability to import/export DXF files and a few other nifty tools. Please do let us know how and whether you like the MEMulator tool. Your feedback will let us know whether we should renew the license for next year. By the way, most design files were transferred from the old PC to the new. And I hope you all keep backup copies of your design files! In case you didn't, all the design files that were on the User drive, the labmembers Documents folders, and the desktop were transferred over. Some large files that didn't seem design-related were not transferred over (for example, your party photos, David.) The old PC will be left in the CAD room until the end of the month, in case there are files you still need to retrieve that didn't get transferred over. Any questions or comments about CAD PC's, let me know -- Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From jimkruger at yahoo.com Tue Jul 12 10:06:09 2005 From: jimkruger at yahoo.com (jim kruger) Date: Tue, 12 Jul 2005 10:06:09 -0700 (PDT) Subject: Correction: Re: Etching Silicon with Nitride on it Message-ID: <20050712170609.7191.qmail@web40901.mail.yahoo.com> I meant to say KOH would be an ISOTROPIC etch for laser deposited Silicon; I expect the Si is amorphous or very fine grained poly. --- jim kruger wrote: > Date: Tue, 12 Jul 2005 06:27:22 -0700 (PDT) > From: jim kruger > Subject: Re: Etching Silicon with Nitride on it > To: Vidya V , > labmembers at snf.stanford.edu > > I have had good experience recently using only Cr on > nitride2 to stop HF-Nitric-Acetic. 200 A Cr seemed > to > work OK with both H:N:A 5-2-3 (very fast for Si) > and > 5-2-13 (much slower). I recommend verification > before > committing critcal parts. > > KOH would probably etch the laser deposited Si > ISOTROPICALLY , perhaps with better selectivity to > nitride2. You did not specify which nitride you > wish > to protect. > > jimkruger > > --- Vidya V wrote: > > > Hi , > > I am trying to etch Silicon which is deposited > on > > silicon nitride > > using HF:HNO3:DI water (Isotropic etch). I would > > like to protect my > > nitride layer beneath my silicon while etching.(I > > have deposited my > > silicon using laser ablation). I had used > > gold-chrome layer to protect > > my nitride, but the problem is that my silicon > > doesnt stick properly > > on gold. Can anyone suggest an etch stop for > silicon > > nitirde while > > using the isotropic etchant? > > regards, > > Vidya > > > > > > > ____________________________________________________ > Sell on Yahoo! Auctions ? no fees. Bid on great > items. > http://auctions.yahoo.com/ > ____________________________________________________ Sell on Yahoo! Auctions ? no fees. Bid on great items. http://auctions.yahoo.com/ From wangdw at stanford.edu Thu Jul 14 19:12:17 2005 From: wangdw at stanford.edu (Dunwei Wang) Date: Thu, 14 Jul 2005 19:12:17 -0700 (PDT) Subject: Ph.D. Thesis Defense---Dunwei Wang Message-ID: Dear Lab members, I'll defend next Wednesday. Hope you can attend. Thanks! Dunwei ________________________________________________________ Title: Synthesis and properties of germanium nanowires Adviser: Hongjie Dai July 20th, Wednesday, 10am CIS-X Auditorium Abstract: As the scaling of electronic devices is approaching its theoretical limit, germanium (Ge) has gained renewed interest as a choice of materials for future electronics due to its low bandgap and high carrier mobilities. Chemically derived low dimensional nanostructures such as nanowires have attracted intense research interest owing to the facile synthesis and high structure perfection. Ge nanowires (GeNWs) have combined advantages and are particularly appealing. I present that single crystalline GeNWs can be readily synthesized by a simple chemical vapor deposition (CVD) method at a low temperature of 275?C from gold (Au) nanocluster seeds. Excellent control over the synthesis is gained to achieve 100% yield of GeNWs relative to the Au seeds by understanding and optimizing the growth chemistry. The potential of GeNWs as building blocks for electronic devices is demonstrated by successful fabrication of complementary field effect transistors (FETs) based on p- and n-type GeNWs. Electrical transport and x-ray photoelectron spectroscopy (XPS) data are correlated to glean the effects of Ge surface chemistry to the electrical characteristics of GeNWs. Various chemical functionalization schemes are investigated to passivate GeNWs surface using alkanethiols and alkyl Grignard reactions. The stability of functionalization against oxidation of germanium for various alkyl chain lengths is elucidated by XPS. Long chain alkanethiols (>=C12) are found to impart the most stable GeNW passivation against oxidation upon extended exposure to ambient air. -++**==--++**==--++**==--++**==--++**==--++**==--++**==--++**== This message was posted through the Stanford campus mailing list server. If you wish to unsubscribe from this mailing list, send the message body of "unsubscribe glamstuds" to majordomo at lists.stanford.edu From mtang at snf.stanford.edu Fri Jul 15 07:13:38 2005 From: mtang at snf.stanford.edu (Mary Tang) Date: Fri, 15 Jul 2005 07:13:38 -0700 Subject: Your help please!!! Message-ID: <42D7C492.5090701@snf.stanford.edu> Hello everyone -- As you know, we receive significant support from NSF through the NNIN. Every year, NSF asks for a list of publications showing work which makes use of any of the NNIN facilities as they, understandably, want to know that the NNIN funds are put to good use. We are asking for your help -- please, please, please send us citations of your publications (journal articles, conference presentations/proceedings, book chapters) that are in press or have issued over the last two years. As you know, the most valuable currency of any research organization is the quality, depth, and breadth of its research publications (and the most valuable asset -- its researchers). This will take only a few minutes of your time, but would mean a great deal for this lab and our lab community. You can email either me or Paul Rissman (rissman at snf.stanford.edu). Electronic versions of any publications would be great, but we'd be quite happy just with the citation. Many thanks for your attention -- Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From rissman at stanford.edu Sun Jul 17 11:53:21 2005 From: rissman at stanford.edu (Paul Rissman) Date: Sun, 17 Jul 2005 11:53:21 -0700 Subject: citation help Message-ID: <5.1.1.5.2.20050717113024.0185d750@rissman.pobox.stanford.edu> Hi All, Thanks to all of you who sent Mary your SNF related publications since 1/1/2004. If you have not already sent your citations, to save me time editing your submission, can you please send them to me directly in the following format? name, "title", Journal, Volume, first page (year). for example C.-H. Lu, G. M. T. Wong, M. D. Deal, W. Tsai, P. Majhi, C. O. Chui, M. R. Visokay, J. J. Chambers, L. Colombo, B. M. Clemens, and Y. Nishi, "Characteristics and Mechanism of Tunable Work Function Gate Electrodes Using a Bilayer Metal Structure on SiO2 and HfO2,"IEEE Electron Device Lett., 26,445 (2005). By the way, please ensure that you include the following at the end of your publications whenever possible: "Work was performed in part at the Stanford Nanofabrication Facility of NNIN supported by National Science Foundation under Grant ECS-9731293." Thanks again for all your help, Paul >X-Sieve: CMU Sieve 2.2 >Delivered-To: rissman at snf.stanford.edu >Mailing-List: contact labmembers-help at snf.stanford.edu; run by ezmlm >X-No-Archive: yes >List-Post: >List-Help: >List-Unsubscribe: >List-Subscribe: >Delivered-To: mailing list labmembers at snf.stanford.edu >Delivered-To: moderator for labmembers at snf.stanford.edu >Date: Fri, 15 Jul 2005 07:13:38 -0700 >From: Mary Tang >Organization: Stanford Nanofabrication Facility >User-Agent: Mozilla Thunderbird 1.0 (Windows/20041206) >X-Accept-Language: en-us, en >To: labmembers at snf.stanford.edu >Subject: Your help please!!! > >Hello everyone -- > >As you know, we receive significant support from NSF through the NNIN. >Every year, NSF asks for a list of publications showing work which makes >use of any of the NNIN facilities as they, understandably, want to know >that the NNIN funds are put to good use. >We are asking for your help -- please, please, please send us citations of >your publications (journal articles, conference presentations/proceedings, >book chapters) that are in press or have issued over the last two >years. As you know, the most valuable currency of any research >organization is the quality, depth, and breadth of its research >publications (and the most valuable asset -- its researchers). >This will take only a few minutes of your time, but would mean a great >deal for this lab and our lab community. > >You can email either me or Paul Rissman (rissman at snf.stanford.edu). >Electronic versions of any publications would be great, but we'd be quite >happy just with the citation. > >Many thanks for your attention -- > >Mary > >-- >Mary X. Tang, Ph.D. >Stanford Nanofabrication Facility >CIS Room 136, Mail Code 4070 >Stanford, CA 94305 >(650)723-9980 >mtang at stanford.edu >http://snf.stanford.edu > -------------- next part -------------- An HTML attachment was scrubbed... URL: From marco.rolandi at gmail.com Sun Jul 17 23:54:01 2005 From: marco.rolandi at gmail.com (Marco Rolandi) Date: Sun, 17 Jul 2005 23:54:01 -0700 Subject: Fwd: Univ. PhD Dissertation Defense/ Marco Rolandi In-Reply-To: References: Message-ID: Hello Labmembers, I will be defending tuesday at 10am in CIS-X. I thought it might be of interest. Marco. ---------- Forwarded message ---------- From: Claire Nicholas Date: Jul 12, 2005 10:08 AM Subject: Re: Univ. PhD Dissertation Defense/ Marco Rolandi To: Cc: apgradstudents at lists.stanford.edu, apfaculty at lists.stanford.edu, yoshio.nishi at stanford.edu *DEPARTMENT OF APPLIED PHYSICS* *UNIVERSITY PhD DISSERTATION DEFENSE* * * *Speaker: Marco Rolandi Research Advisor: Professor Hongjie Dai* ** *Title:* *Scanning Probes for Lithography, Manipulation and Devices* * Date : July 19, 2005 Time: 10:00 a.m. Place: CIS-X Auditorium * *ABSTRACT* *Future device miniaturization requires developing new lithography techniques capable of fabricating progressively smaller structures. Scanning probes are relatively low cost equipment that can push the limit of lithography in the nanometer range, with the advantages of high resolution, accuracy in the positioning of the overlayers and no proximity aberrations. We have developed three novel scanning probe lithography (SPL) resists based on thin films of Titanium, Molybdenum and Tungsten and we have manipulated single walled carbon nanotubes using the sharp tip of an atomic force microscope (AFM) for the fabrication of nanostructures. A dendrimer-passivated Ti film was imaged in the positive and the negative tone using SPL. This is the first example of SPL imaging in both tones using a unique resist. Positive tone patterning was obtained by locally scribing the dendrimer molecules and subsequent acid etch of the deprotected Ti film. Local anodic oxidation transforms Ti into TiO--2 and deposits a thin layer of amorphous carbon on the patterned areas. This is very resistive to base etch and affords negative tone imaging of the Ti surface. Molybdenum and Tungsten were patterned using local anodic oxidation. This scheme is particularly flexible thanks to the solubility in water of the fully oxidized states of the two metals. We will present the facile fabrication of several nanostructures such as of trenches, dots wires and nanoelectrodes and show the potential of this scheme for competing with conventional lithographic techniques based on radiation. * *DEPARTMENT OF APPLIED PHYSICS* *UNIVERSITY PhD DISSERTATION DEFENSE* * * -- -- ----------------------------------------------------------------- Marco Rolandi PhD Candidate Department of Applied Physics Dai Group Department of Chemistry Stanford University Stanford, 94305 phone: (650) 725-9156 -------------- next part -------------- An HTML attachment was scrubbed... URL: From amf at amfitzgerald.com Mon Jul 18 14:20:17 2005 From: amf at amfitzgerald.com (Alissa M. Fitzgerald) Date: Mon, 18 Jul 2005 14:20:17 -0700 Subject: Reminder: SNF User's Meeting: Thursday July 21, 4-5pm CIS Conference Room Message-ID: <20050718201832.4946F63051F@mailgate1.dslextreme.com> Greetings Labmembers, There will be a SNF user's meeting on Thursday July 21st, from 4-5pm in the CIS conference room. All are welcome to attend. This is intended to be a town-hall style meeting, where users can meet to discuss important lab issues, exchange information, and make suggestions. The lab is a community, make sure your voice is heard. Agenda - New moderator introduction - Upcoming 8/15 furnace shutdown and second sourcing options - Batch consolidation services - Committee representation for industrial users - Problems/concerns - Ideas for future meetings, such as vendor/sales presentations, etc. Hope to see you there! Regards, Alissa Fitzgerald Alissa M. Fitzgerald, Ph.D. A.M. Fitzgerald & Associates, LLC Technical Consulting Services MEMS | Materials | Sensor Systems 655 Skyway Suite 118 San Carlos, CA 94070 (650) 592-6100 tel/fax www.amfitzgerald.com -------------- next part -------------- An HTML attachment was scrubbed... URL: From amf at amfitzgerald.com Tue Jul 19 12:14:09 2005 From: amf at amfitzgerald.com (Alissa M. Fitzgerald) Date: Tue, 19 Jul 2005 12:14:09 -0700 Subject: **Room Change** to CIS-X Auditorium - SNF User's Meeting: Thursday July 21, 4-5pm Message-ID: <20050719191415.8B745642A4@mailgate3.dslextreme.com> Hello Labmembers, We had to change rooms due to a scheduling conflict. Please note the SNF User's Meeting will be held in the CIS-X Auditorium, not the CIS conference room. Regards, Alissa -------------- next part -------------- An HTML attachment was scrubbed... URL: From luckyyrl at gmail.com Tue Jul 19 16:51:00 2005 From: luckyyrl at gmail.com (Yuerui Lu) Date: Tue, 19 Jul 2005 16:51:00 -0700 Subject: About ordering SOI wafer Message-ID: <9dc2cbc0507191651326ed244@mail.gmail.com> Dear all, Does anybody know how to order SOI wafers? I want to order two types of SOI wafers: SIMOX and UNIBOND. Please give me some information how to order them if you have some experience. Thank you very much. Regards Yuerui From edmyers at stanford.edu Wed Jul 20 09:41:54 2005 From: edmyers at stanford.edu (Ed Myers) Date: Wed, 20 Jul 2005 09:41:54 -0700 Subject: LDD26W Shortage - Please Conserve Message-ID: <6.2.1.2.2.20050720093536.01fc64b8@edmyers.pobox.stanford.edu> Labmembers, Please conserve LDD26W our photoresist developer. It has just came to our attention we are down to 2 gallons of LDD26W Developer. This is the major developer used in the facility. Our typical usage is on the order of 5 gallons per day. We have charged the SVG developer tracks, so we are OK for today. The expected shipment date is Friday, so the concern is for Thursday and part of the day Friday. Needless to say, we are working on getting the delivery moved up. From jerabek at snf.stanford.edu Wed Jul 20 10:08:21 2005 From: jerabek at snf.stanford.edu (Paul Jerabek) Date: Wed, 20 Jul 2005 10:08:21 -0700 (PDT) Subject: mask writer shutdown Message-ID: To whom it may concern, Micronic Laser writer is shutdown due to a focusing problem.Micronic field service has been called to address the problem -Paul From holdenli at stanford.edu Wed Jul 20 20:49:56 2005 From: holdenli at stanford.edu (Holden Li) Date: Wed, 20 Jul 2005 20:49:56 -0700 Subject: PhD Oral Exam - Holden Li Message-ID: <001f01c58da7$438965e0$07a30c80@Sheares> DEPARTMENT OF MECHANICAL ENGINEERING UNIVERSITY PhD DISSERTATION DEFENSE Speaker: Holden Li Research Advisor: Professor Tom Kenny Title: Study of High Speed Acoustic Separation of Particles in Micro-channels Date : July 25, 2005 Time: 9:30 a.m. Place: CIS-X Auditorium ABSTRACT Doctors and engineers have long envisioned that a handheld portable blood diagnosis device would be able to give an accurate measurement of chemical content based on a very small sample in the shortest time possible. One of the immediate applications of such device is the Point Of Care (POC) diagnosis system, whereby a single drop of human blood would determine his/her health status. However, a major technical challenge lies in the ability to separate different particles in micro-scale, which in the case of human blood, is to separate red and white blood cells and plasma in a quick, cheap, reliable device with low power consumption (less than 100mW). A robust and high-speed separation mechanism of using acoustic separation is proposed for blood cells separation. This study is a continuation work of the fundamental research done more than half a century ago when the first experiment of using ultrasonic standing waves to separate particles in a suspended liquid medium was successfully carried out. This current research covers the study of ultrasonic standing waves behavior in micro-channels, scaling effects and most importantly to separate different particles based on their sizes differences as in the case of blood cells. A method called Micro Particle Image Velocimetry (micro-PIV) is used to understand the mechanism of acoustic separation in the micro-channels, and polystyrene beads of similar densities to the blood cells, are used to represent red and white blood cells in the whole blood. This has enabled the image capturing of the separation process in microfluidic regimes and further demonstrates the impact of acoustic potential energy in the overall separation mechanism, and the promising future of implementation of this technology in Lab-On-A-Chip application. Comparison with the most conventional centrifugation method of separation shows that acoustic separation running at megahertz frequencies exhibits promising results as it produces only a small fraction of the force (less than 50G force) acting on the blood cells compared to the order of 10,000G forces exerted by centrifuges to achieve the goal. From cbuie at stanford.edu Thu Jul 21 15:44:28 2005 From: cbuie at stanford.edu (Cullen R. Buie) Date: Thu, 21 Jul 2005 15:44:28 -0700 Subject: STSETCH Open, 4-8pm today Message-ID: <1121985868.42e0254c7c9e1@webmail.stanford.edu> All, Sorry for the mass email but I had to cancel my reservation of STS today from 4-8pm. It's open if you need it. Sorry for the inconvenience. -- Cullen Buie Department of Mechanical Engineering Stanford University Building 530, Room 224 Stanford, CA. 94305-3030 Tel: (650) 725-9495 Fax: (650) 723-7657 From djackrel at stanford.edu Thu Jul 21 19:35:57 2005 From: djackrel at stanford.edu (David Bryan Jackrel) Date: Thu, 21 Jul 2005 19:35:57 -0700 (PDT) Subject: David Jackrel - PhD Orals Announcement Message-ID: DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING UNIVERSITY PhD DISSERTATION DEFENSE "InGaAs and GaInNAs(Sb) 1064 nm Photodetectors and Solar Cells" Speaker: David Jackrel Research Advisor: Professor James S. Harris, Jr. Date / Time: Wednesday, July 27th 2005, 2:00 PM Location: CIS-X Auditorium ABSTRACT The dilute-nitrides GaInNAs and GaInNAsSb show great promise in becoming the next choice for 1064 nm photodetectors and multijunction solar cells because these materials can be grown lattice-matched to GaAs and Ge substrates. One application where 1064 nm photodetectors with superior properties are required is LIGO, The Laser Interferometer Gravitational Wave Observatory. LIGO is designed to be one of the first instruments capable of detecting gravitational waves from astrophysical sources, such as black holes and neutron stars. The ability to tune the bandgap of the dilute nitrides between 1.0 eV and 1.4 eV while maintaining the lattice constant of GaAs (or Ge) also makes them ideal candidates for the second smallest junction in multijunction solar cells grown on Ge substrates. The current solution for growing 1 eV materials on GaAs or Ge substrates is to grow lattice-mismatched (metamorphic) InGaAs using a graded buffer layer; however, these structures are plagued by higher threading dislocation densities and rough surfaces. In this thesis, metamorphic InGaAs, lattice-matched GaInNAs and GaInNAsSb, p-i-n double heterostructures grown on GaAs substrates by molecular beam epitaxy with a RF-plasma nitrogen cell are presented. GaInNAs structures grown with and without deflection plates on the nitrogen source, which serve to protect the growing surface from ion damage caused by the high energy plasma, are also compared. The lattice constants and film relaxation are investigated by high-resolution x-ray diffraction, the dislocation density is determined through spectral cathodoluminescence imaging, and the bandgap of the materials is established by photoluminescence. The structures were processed into back-illuminated photodetectors, which have their absorbing layer less than 1 micron from the heat sink to improve damage threshold, and solar cells. As a result of this work, the first dilute nitride rear-illuminated 1 eV photodiodes and the first GaInNAsSb solar cells have been produced. GaIn(N)As(Sb) photodiode and solar cell properties can be summarized as follows. The internal quantum efficiency (IQE) of back-illuminated GaInNAs and GaInNAs(Sb) photodiodes is somewhat lower than comparable metamorphic InGaAs devices due only to a thinner absorbing region (IQE is 60% and 75%, respectively, and absorbing layers are 1 micron and 2 microns, respectively). Recombination loss between the dilute nitride and metamorphic devices is similar. Likewise, the efficiency of the dilute nitride photodiodes with and without Sb is also similar. The device efficiencies are limited by free-carrier absorption in the substrate, which was thinned to 100 microns but not completely removed. If this loss were eliminated, device efficiency would increase to 90% and 75% for the InGaAs and GaInNAs(Sb) devices respectively, which indicates that both materials systems could yield photodiodes with properties comparable with commercially available InP-based detectors. The solar cell study is focused on the dilute nitride materials. All aspects of the GaInNAs solar cell performance are improved drastically when the deflection plates are employed during growth. Additionally, the GaInNAsSb solar cells show substantially higher internal quantum efficiency (79%) than the GaInNAs devices grown using the deflection plates (67%), but reduced power conversion efficiency due to depressed fill-factor and open-circuit voltage. These results are encouraging however, and suggest that with further optimization it may be possible to improve dilute nitride solar cell properties through the incorporation of antimony. //o//o//o//o//o//o//o//o//o//o//o//o//o//o//o//o//o//o//o//o//o//o//o//o//o// David Jackrel djackrel at stanford.edu Dept. of Materials Science and Engineering Stanford University ......................................... .Center for Integrated Systems Extension. .420 Via Palou | . .MS 4070 \|/ . .Stanford, CA 94305-4070 ---O--- . .phone: (650)725-7699 /|\ . .fax: (650)723-4659 | . ......................................... From hopcroft at snf.stanford.edu Thu Jul 21 23:27:39 2005 From: hopcroft at snf.stanford.edu (Matt Hopcroft) Date: Thu, 21 Jul 2005 23:27:39 -0700 (PDT) Subject: missing wafer box - please help! Message-ID: Hello, A wafer box went missing in litho today- I put it on the table by the Yes oven around 3:20pm, and 20 minutes later, it had vanished. It is a regular white plastic box labelled "Group A (1-4)". I assume someone picked it up by mistake... if you can help me find it, please let me know! Thank you, -Matt Hopcroft hopcroft at snf.stanford.edu From jerabek at snf.stanford.edu Fri Jul 22 08:32:31 2005 From: jerabek at snf.stanford.edu (Paul Jerabek) Date: Fri, 22 Jul 2005 08:32:31 -0700 (PDT) Subject: mask writer Message-ID: To whom it may concern, Micronic mask writer has been fixed by field eng. I have written 4 mask since then abd everything looks great. -Paul From shott at snf.stanford.edu Fri Jul 22 08:43:50 2005 From: shott at snf.stanford.edu (John Shott) Date: Fri, 22 Jul 2005 08:43:50 -0700 Subject: When Coral is "running slowly ...." Message-ID: <42E11436.2050804@snf.stanford.edu> An HTML attachment was scrubbed... URL: From john.wasserbauer at earthlink.net Sun Jul 24 23:09:34 2005 From: john.wasserbauer at earthlink.net (John Wasserbauer) Date: Sun, 24 Jul 2005 23:09:34 -0700 Subject: Missing book Message-ID: <000001c590df$71127930$30a8dd18@Dexter> All, I left a copy of a book entitled "Wafer Bonding" either in the lab, the gowning area, or out on the benches in the hall on Wednesday, July 13th. It was wrapped in one of the anti-particle plastic bags available in the gowning area. If anyone has seen it or found it, please contact me. Thank you. John Wasserbauer wasserbauer at snf.stanford.edu cell 510-387-2476 -------------- next part -------------- An HTML attachment was scrubbed... URL: From djackrel at stanford.edu Tue Jul 26 09:14:15 2005 From: djackrel at stanford.edu (David Bryan Jackrel) Date: Tue, 26 Jul 2005 09:14:15 -0700 (PDT) Subject: David Jackrel - PhD Orals Announcement Message-ID: DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING UNIVERSITY PhD DISSERTATION DEFENSE "InGaAs and GaInNAs(Sb) 1064 nm Photodetectors and Solar Cells" Speaker: David Jackrel Research Advisor: Professor James S. Harris, Jr. Date / Time: Wednesday, July 27th 2005, 2:00 PM (refreshments will be served at 1:40 PM) Location: CIS-X Auditorium ABSTRACT The dilute-nitrides GaInNAs and GaInNAsSb show great promise in becoming the next choice for 1064 nm photodetectors and multijunction solar cells because these materials can be grown lattice-matched to GaAs and Ge substrates. One application where 1064 nm photodetectors with superior properties are required is LIGO, The Laser Interferometer Gravitational Wave Observatory. LIGO is designed to be one of the first instruments capable of detecting gravitational waves from astrophysical sources, such as black holes and neutron stars. The ability to tune the bandgap of the dilute nitrides between 1.0 eV and 1.4 eV while maintaining the lattice constant of GaAs (or Ge) also makes them ideal candidates for the second smallest junction in multijunction solar cells grown on Ge substrates. The current solution for growing 1 eV materials on GaAs or Ge substrates is to grow lattice-mismatched (metamorphic) InGaAs using a graded buffer layer; however, these structures are plagued by higher threading dislocation densities and rough surfaces. In this thesis, metamorphic InGaAs, lattice-matched GaInNAs and GaInNAsSb, p-i-n double heterostructures grown on GaAs substrates by molecular beam epitaxy with a RF-plasma nitrogen cell are presented. GaInNAs structures grown with and without deflection plates on the nitrogen source, which serve to protect the growing surface from ion damage caused by the high energy plasma, are also compared. The lattice constants and film relaxation are investigated by high-resolution x-ray diffraction, the dislocation density is determined through spectral cathodoluminescence imaging, and the bandgap of the materials is established by photoluminescence. The structures were processed into back-illuminated photodetectors, which have their absorbing layer less than 1 micron from the heat sink to improve damage threshold, and solar cells. As a result of this work, the first dilute nitride rear-illuminated 1 eV photodiodes and the first GaInNAsSb solar cells have been produced. GaIn(N)As(Sb) photodiode and solar cell properties can be summarized as follows. The internal quantum efficiency (IQE) of back-illuminated GaInNAs and GaInNAs(Sb) photodiodes is somewhat lower than comparable metamorphic InGaAs devices due only to a thinner absorbing region (IQE is 60% and 75%, respectively, and absorbing layers are 1 micron and 2 microns, respectively). Recombination loss between the dilute nitride and metamorphic devices is similar. Likewise, the efficiency of the dilute nitride photodiodes with and without Sb is also similar. The device efficiencies are limited by free-carrier absorption in the substrate, which was thinned to 100 microns but not completely removed. If this loss were eliminated, device efficiency would increase to 90% and 75% for the InGaAs and GaInNAs(Sb) devices respectively, which indicates that both materials systems could yield photodiodes with properties comparable with commercially available InP-based detectors. The solar cell study is focused on the dilute nitride materials. All aspects of the GaInNAs solar cell performance are improved drastically when the deflection plates are employed during growth. Additionally, the GaInNAsSb solar cells show substantially higher internal quantum efficiency (79%) than the GaInNAs devices grown using the deflection plates (67%), but reduced power conversion efficiency due to depressed fill-factor and open-circuit voltage. These results are encouraging however, and suggest that with further optimization it may be possible to improve dilute nitride solar cell properties through the incorporation of antimony. //o//o//o//o//o//o//o//o//o//o//o//o//o//o//o//o//o//o//o//o//o//o//o//o//o// David Jackrel djackrel at stanford.edu Dept. of Materials Science and Engineering Stanford University ......................................... .Center for Integrated Systems Extension. .420 Via Palou | . .MS 4070 \|/ . .Stanford, CA 94305-4070 ---O--- . .phone: (650)725-7699 /|\ . .fax: (650)723-4659 | . ......................................... -++**==--++**==--++**==--++**==--++**==--++**==--++**== This message was posted through the Stanford campus mailing list server. If you wish to unsubscribe from this mailing list, send the message body of "unsubscribe mse-students" to majordomo at lists.stanford.edu From john.wasserbauer at group4labs.com Tue Jul 26 11:48:47 2005 From: john.wasserbauer at group4labs.com (John Wasserbauer) Date: Tue, 26 Jul 2005 13:48:47 -0500 Subject: Metalica assistance Message-ID: <20050726184847.CBBCF7C67@sm4app02.siteprotect.com> An HTML attachment was scrubbed... URL: From shott at snf.stanford.edu Tue Jul 26 16:42:14 2005 From: shott at snf.stanford.edu (John Shott) Date: Tue, 26 Jul 2005 16:42:14 -0700 Subject: Automatic External Defibrillators installed in CIS .... Message-ID: <42E6CA56.2000102@snf.stanford.edu> SNF Lab Members and CIS Building Occupants: We wanted to inform everyone that we have installed two Automatic External Defibrillators (AEDs) in the CIS Building. One of them is located on the first floor of CIS-X close to the glass-stairway that leads to the basement. The other one is located near the CIS receiving area. There is a sign above each one. The first group of staff members has been recently trained in CPR, First Aid, and use of the AEDs. Those folks who have been recently certfied include: Paul Rissman, Ed Myers, Dick Crane, Elmer Enriquez, Maurice Stevens, Jim Haydon, Mike Dickey, Ted Berg, Nancy Latta, Janine Hannibal, Maureen Baran, Mahnaz Mansourpour, Jasmine Hasi, Jane Edwards, Mario Vilanova, and John Shott. If you are already certified in CPR and the use of AEDs, please let us know so that we may maintain a current list near each unit. Although I don't have any details, I suspect that the School of Engineering will be coordinating additional classes for CPR, First Aid, and AED usage for others who may be interested in this important training. Of course, any emergency requiring use of the AEDs should also be accompanied by a call to 911 (9-911 from a campus phone) the get the paramedics and their advanced skills and equipment on site as soon as possible. Thank you for your continued support, John Shott From yamanaka at snowmass.stanford.edu Fri Jul 29 13:41:46 2005 From: yamanaka at snowmass.stanford.edu (Kazuhiko Yamanaka) Date: Fri, 29 Jul 2005 13:41:46 -0700 Subject: Looking for SOI wafers In-Reply-To: <1120246495.42c59adf6afbe@webmail.stanford.edu> References: <1120246495.42c59adf6afbe@webmail.stanford.edu> Message-ID: <20050729133520.AE2C.YAMANAKA@snowmass.stanford.edu> Hi everyone, I am looking for SOI wafers or pieces which consist of more than 1um SiO2 layer and 0.25um Si top layer. Does anybody have some pieces of SOI that you can spare or do not need. I am also interested in vendors who can sell us SOI wafers. Thanks, Kazuhiko ------- Kazuhiko Yamanaka Harris Group, Solid State & Photonics Lab, Center for Integrated Systems, Stanford University CIS-X Rm 126X, Stanford, CA 94305-4075 Tel : (650)725-6909 Fax: (650)723-4659 E-mail : yamanaka at snowmass.stanford.edu From mahnaz at snf.stanford.edu Fri Jul 29 17:39:03 2005 From: mahnaz at snf.stanford.edu (Mahnaz Mansourpour) Date: Fri, 29 Jul 2005 17:39:03 -0700 Subject: 220-7 Message-ID: <42EACC27.3010106@snf.stanford.edu> Hello all, Just to let you know that we are little bit low on the 220-7 resist, I have made a small bottle for manual dispense so please look for it when you need to do manual dispense instead of the big bottle. We will get our shipment on Tuesday morning. We have enough till then. mahnaz