Correction: Re: Etching Silicon with Nitride on it
jimkruger at yahoo.com
Tue Jul 12 10:06:09 PDT 2005
I meant to say KOH would be an ISOTROPIC etch for
laser deposited Silicon; I expect the Si is amorphous
or very fine grained poly.
--- jim kruger <jimkruger at yahoo.com> wrote:
> Date: Tue, 12 Jul 2005 06:27:22 -0700 (PDT)
> From: jim kruger <jimkruger at yahoo.com>
> Subject: Re: Etching Silicon with Nitride on it
> To: Vidya V <vidyagv at gmail.com>,
> labmembers at snf.stanford.edu
> I have had good experience recently using only Cr on
> nitride2 to stop HF-Nitric-Acetic. 200 A Cr seemed
> work OK with both H:N:A 5-2-3 (very fast for Si)
> 5-2-13 (much slower). I recommend verification
> committing critcal parts.
> KOH would probably etch the laser deposited Si
> ISOTROPICALLY , perhaps with better selectivity to
> nitride2. You did not specify which nitride you
> to protect.
> --- Vidya V <vidyagv at gmail.com> wrote:
> > Hi ,
> > I am trying to etch Silicon which is deposited
> > silicon nitride
> > using HF:HNO3:DI water (Isotropic etch). I would
> > like to protect my
> > nitride layer beneath my silicon while etching.(I
> > have deposited my
> > silicon using laser ablation). I had used
> > gold-chrome layer to protect
> > my nitride, but the problem is that my silicon
> > doesnt stick properly
> > on gold. Can anyone suggest an etch stop for
> > nitirde while
> > using the isotropic etchant?
> > regards,
> > Vidya
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