From shott at snf.stanford.edu Wed Nov 2 13:46:08 2005 From: shott at snf.stanford.edu (John Shott) Date: Wed, 02 Nov 2005 13:46:08 -0800 Subject: University of Southampton laboratory fire ... Message-ID: <436933A0.7090905@snf.stanford.edu> An HTML attachment was scrubbed... URL: From mtang at stanford.edu Thu Nov 3 10:31:32 2005 From: mtang at stanford.edu (Mary Tang) Date: Thu, 3 Nov 2005 10:31:32 -0800 Subject: Upcoming Knowledge Foundation Conferences Message-ID: <1131042692.436a5784d8249@webmail.stanford.edu> Greetings labmembers! The Knowledge Foundation is holding several conferences next week in San Francisco on topics of Photonic Nanosystems, Biodetection Technologies, and MEMS/BioMEMS. These conferences are a good way to get a broad introduction to new trends in these fields. The program announcements are attached here. The organizers have kindly extended an invitation of two complimentary student registrations to the MEMS/BioMEMS conference. If you are a student and would like to attend, please reply to this email. Thanks for your attention! Mary __ Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From guerra at par.stanford.edu Thu Nov 3 14:21:45 2005 From: guerra at par.stanford.edu (Ann Guerra) Date: Thu, 3 Nov 2005 14:21:45 -0800 (PST) Subject: Via Pueblo detour info Message-ID: Dates have slipped some, but expect the following interruption: With continuing infrastructure work being done for the SEQ2, Via Pueblo will be closed from Via Ortega to Via Palou from October 31st through November 18th. A detour using the South Service road through the Panama/Via Ortega corner parking lot, then north on Via Palou to Via Pueblo, will be available during this construction. John Mendoza Packard Facilities Manager From guerra at par.stanford.edu Thu Nov 3 14:20:07 2005 From: guerra at par.stanford.edu (Ann Guerra) Date: Thu, 3 Nov 2005 14:20:07 -0800 (PST) Subject: Annual Campus Clean-up day Message-ID: This year's annual campus clean-up day is scheduled for Thursday November 17th for Zone A (which includes CIS). Electronics and monitors are NOT included - go through the DPA. Anything with Stanford property tags will also need to be processed through property administration. Info & further sites at: http://ora.stanford.edu/news/default.asp?key=21 *Ann* From anojeh at stanford.edu Fri Nov 4 08:59:21 2005 From: anojeh at stanford.edu (Alireza Nojeh) Date: Fri, 4 Nov 2005 08:59:21 -0800 (PST) Subject: [labmembers] Invitation to my PhD orals Message-ID: Dear labmembers, I would like to invite you all to my PhD defense on Monday at 10 AM. I hope you can make it. Best, Ali ----------------------------------- Controlled electron emission from single-walled carbon nanotubes Alireza Nojeh Department of Electrical Engineering Advisor: Professor R. Fabian Pease Monday, November 7, 2005 10 AM (Refreshments served at 9:45 AM) CIS-X Auditorium In electron-beam lithography, the brightness, energy spread, and shot noise of the electron source are critical in determining the resolution and throughput. Carbon nanotubes, nanometer-diameter tubes of rolled graphite layers, have demonstrated brightness values of about an order of magnitude better than traditional electron sources with similar values of energy spread. Shot noise is due to the random emission of electrons from the source. In order to reduce shot noise, electron emission must be controlled in time. The ultimate goal would be to have a turnstile electron emitter. Such an emitter is also desirable in a free-electron analog to digital converter. One way to gain control is to isolate an electron in a quantum dot, and stimulate its emission by an external agent. Here the challenge is to have a quantum dot small enough to be sensitive to single electrons at room temperature. I will demonstrate that a cross structure, made from single-walled carbon nanotubes, can provide a solution, and describe progress made toward the fabrication of such a structure. Then I will present experiments where electron emission from the tip of a single-walled carbon nanotube is stimulated by another electron beam. An electron multiplication factor of up to 100 can be obtained. Since the interaction volume of the primary beam with the nanotube is very small (only a few cubic nanometers of a hollow structure), traditional beam-bulk specimen models cannot explain the effect. I will present a model based on ab-initio calculations to explain this type of interaction. Interestingly, this phenomenon shows that single-walled carbon nanotubes can be used not only as controllable emitters, but also as localized (nanometer scale) electron detectors. From curlwang at stanford.edu Mon Nov 7 09:32:19 2005 From: curlwang at stanford.edu (Ke Wang) Date: Mon, 7 Nov 2005 09:32:19 -0800 (PST) Subject: wafers with oxide? Message-ID: Dear labmembers, I wonder if anybody has two spare silicon wafers with some silicon dioxide layer (1000-5000A) to share. Ideally wet oxide, but others are fine as well. Or if someone is going to do a furnace oxide run these days, would you mind if I add two wafers inside? Please let me know. Thanks a lot!! Ke _____________________________________________ Ke Wang PHD Candidate Department of Applied Physics, Stanford University (O): (650)725-5774 From ryantu at stanford.edu Mon Nov 7 11:50:36 2005 From: ryantu at stanford.edu (Ryan Tu) Date: Mon, 7 Nov 2005 11:50:36 -0800 Subject: Measuring current on oscilloscope Message-ID: <1131393036.436fb00c0e04a@webmail.stanford.edu> Hello, Does anyone have a setup to measure the transient current using an oscilloscope? We can probably do it by adding a series resistance, but I wanted to see first if anyone has a current probe or similar setup. Thanks, Ryan From junxian at stanford.edu Mon Nov 7 15:49:15 2005 From: junxian at stanford.edu (Junxian Fu) Date: Mon, 7 Nov 2005 15:49:15 -0800 Subject: Fwd: ISTFA 2005 in San Jose Complimentary Pass Message-ID: <1131407355.436fe7fbcc17b@webmail.stanford.edu> ----- Forwarded message from Jason Fu ----- Date: Mon, 7 Nov 2005 15:44:43 -0800 From: Jason Fu Reply-To: Jason Fu Subject: ISTFA 2005 in San Jose Complimentary Pass To: harris_grp at snowmass.stanford.edu Hi, 31st International Symposium for Testing and Failure Analysis (Sponsored by EDFAS, electronic device failure analysis society) is in San Jose McEnery Convention Center Nov 6-10. The exposition is starting from tomorrow, Nov. 8-9. I have a bunch of complimentary expo passes. If you are interested in failure analysis community, it is a good opportunity to attend the exposition. Let me know if you need one. I will be hosting Exponent's booth (101). Just give me a call and I will give you the pass at the conference. Please feel free to forward the email to the people who might be interested. Regards, Junxian Junxian (Jason) Fu, PhD Senior Engineer, Electrical Enginnering Practice Exponent Failure Analysis Associates, Inc. jfu at exponent.com (O) 650-688-6911 (cell) 650-305-9140 ----- End forwarded message ----- -------------- next part -------------- An HTML attachment was scrubbed... URL: From ahazeghi at stanford.edu Mon Nov 7 16:08:28 2005 From: ahazeghi at stanford.edu (Arash Hazeghi) Date: Tue, 8 Nov 2005 03:38:28 +0330 Subject: LTO wet etch rate Message-ID: <1131408508.436fec7cceb80@webmail> Hi, I have some W wafers with ~2600A LTO 400 with normal 1um resist, I want to etch LTO for ~2um using 6:1 or 20:1 Buff HF, does anyone know the etch rate and PR/Oxide Oxide/W selectivity for Wbmetal? Thanks, Arash From kimsangb at stanford.edu Tue Nov 8 21:40:19 2005 From: kimsangb at stanford.edu (SangBum Kim) Date: Tue, 8 Nov 2005 21:40:19 -0800 Subject: hot plate vs. oven Message-ID: <200511090539.jA95dmnV023129@smtp1.Stanford.EDU> Dear labmembers, Just out of curiosity, how are the hot plate and oven different for the postbake process after development? http://snf.stanford.edu/Process/Lithography/3612.html says 1 minute on the hot plate and 25 minutes in the oven will work the same. Why can we use much shorter time for the hot plate? When I tried to use 3612 as a wet etch mask in 20:1 BOE, 25 minute oven baked sample worked better than 1 minute hot plate baked sample. Thanks, SangBum -------------- next part -------------- An HTML attachment was scrubbed... URL: From shott at snf.stanford.edu Wed Nov 9 08:18:32 2005 From: shott at snf.stanford.edu (John Shott) Date: Wed, 09 Nov 2005 08:18:32 -0800 Subject: hot plate vs. oven In-Reply-To: <200511090539.jA95dmnV023129@smtp1.Stanford.EDU> References: <200511090539.jA95dmnV023129@smtp1.Stanford.EDU> Message-ID: <43722158.7040902@snf.stanford.edu> An HTML attachment was scrubbed... URL: From mtang at stanford.edu Wed Nov 9 09:11:12 2005 From: mtang at stanford.edu (Mary Tang) Date: Wed, 9 Nov 2005 09:11:12 -0800 Subject: Building Evacuation Point Message-ID: <1131556272.43722db025e21@webmail.stanford.edu> Greeting labmembers -- Unless you've been in the lab for more than 24 hours straight, you've probably noticed that the CIS/CISX building is surrounded on two sides by an awful lot of construction (or for now, deconstruction). A couple of the more astute labmembers even noticed that the construction appears to block access to the official Evacuation Assembly Point (EAP), located near the parking spot of our favorite orange mini-forklift, by Ginzton. Please be reassured that this EAP is still our official building evacuation meeting site. There will be limited access just for today, because of the construction -- but after today, the construction people will set up and maintain direct access from CIS to the EAP, at the point where the two construction roads meet. You can also reach the EAP by going around the construction zones (there is still sidewalk access on either side of the construction.) Your lab safety committee (safety at snf.stanford.edu) From joshuar at stanford.edu Fri Nov 11 11:03:08 2005 From: joshuar at stanford.edu (Josh Ratchford) Date: Fri, 11 Nov 2005 11:03:08 -0800 Subject: Cuprous Oxide Films on SiN Message-ID: Hello, Does anyone know of user at SNFor vendor that are experts in making Cuprous Oxide films? I want to make Cu2O film of 25 to 50 nm thick on 4" SiN wafers. Control of the ratio of Cu to O is important to the nature of the experiment as well as the oxidation state of Cu. Thank you, Josh -------------- next part -------------- An HTML attachment was scrubbed... URL: From peichen at stanford.edu Fri Nov 11 15:59:50 2005 From: peichen at stanford.edu (Pei-Chen Su) Date: Fri, 11 Nov 2005 15:59:50 -0800 Subject: Lost Wafer Holder for KOH Etch --- Still Missing! In-Reply-To: Message-ID: <200511112359.jABNxpDa001753@smtp2.Stanford.EDU> Dear labmembers, We are still having trouble looking for our 4" wafer holder for Si wet etching. I attach again the picture of a similar one. The missing one looks same to the one in the picture except the handle is slightly different. This holder was ordered from a German company with the company AMMT on it. I believe that when it was missing, the body of the holder, the top-cover, six screws, together with 1 spare screw and 3 spare O-rings, were all put inside a zip bag. Since this is such a pricy piece and we use this holder heavily, we really really hope that this missing holder can come back to us. Although it's been missing for 2 months, we would still greatly appreciate that if you can help us find it. Thank you for your help, Best regards, Pei-Chen -----Original Message----- From: Kevin Crabb [mailto:kcrabb at stanford.edu] Sent: Friday, October 14, 2005 1:39 PM To: labmembers at snf.stanford.edu Subject: Lost Wafer Holder for KOH Etch Hello All, I have lost/misplaced a 4" wafer holder used to protect the backside of a wafer during KOH silicon etching. The holder was last seen 2-3 weeks ago; it was most likely left on the bench across from wet bench general. It is not in any of the Lost and Found bins. If you have seen this holder, please let me know. I've attached a picture of a similar holder, so you can see what it looks like. Although it seems like a simple piece, it comes from Europe and costs several thousand dollars, so helping me find it would be greatly appreciated. Thank you, Kevin kcrabb at stanford.edu -------------- next part -------------- A non-text attachment was scrubbed... Name: wafer holder.jpg Type: image/jpeg Size: 336886 bytes Desc: not available URL: From ankurjn at stanford.edu Mon Nov 14 10:29:20 2005 From: ankurjn at stanford.edu (Ankur Jain) Date: Mon, 14 Nov 2005 10:29:20 -0800 Subject: Heat capacity of LPCVD Silicon Nitride films Message-ID: <1131992960.4378d7809de45@webmail.stanford.edu> Hello labmembers, I am looking for information about the heat capacity of LPCVD Silicon Nitride films deposited at SNF. In case you are aware of any data, I would appreciate it if you could let me know. thanks, Ankur. From kimsora at stanford.edu Mon Nov 14 12:19:31 2005 From: kimsora at stanford.edu (Sora Kim) Date: Mon, 14 Nov 2005 12:19:31 -0800 Subject: Electrochemical etch stop Message-ID: <00d001c5e958$b8da5f40$325640ab@kimsora> Dear all, I am wondering if you have some experience of electrochemical etch stop. I want to thin down several micron silicon into 0.5um. I would like to know that 0.5um is reasonable thickness to be achieved in terms of uniformity. I also want to know the achievable smallest thickness. Any small piece of advice will be very helpful. Thank you very much. Sora -------------- next part -------------- An HTML attachment was scrubbed... URL: From mdr at stanford.edu Mon Nov 14 13:49:53 2005 From: mdr at stanford.edu (Matthew D. Robbins) Date: Mon, 14 Nov 2005 13:49:53 -0800 Subject: Photoresist Film Message-ID: Hello-- I am interested in learning about photoresist film that can be laminated onto a wafer. Mahnaz says that the resident expert on this technology is Tony Flannery. Unfortunately, I have been unable to get intouch with Tony by email. If anyone else in the lab has any information on this technique, please let me know. Thanks, Matt ***************************** Matthew D. Robbins Department of Chemistry Stanford University 333 Campus Drive Box 56 Stanford, CA 94305 Office: 650-723-4398 e-mail: mdr at stanford.edu ***************************** From mtang at stanford.edu Mon Nov 14 14:37:25 2005 From: mtang at stanford.edu (Mary Tang) Date: Mon, 14 Nov 2005 14:37:25 -0800 Subject: Photoresist Film In-Reply-To: References: Message-ID: <1132007845.437911a5acd2d@webmail.stanford.edu> Hi Matt -- I have to admit that I've never done this myself, but this is what I've been given to understand. The dry film resist is probably Riston, a negative resist product from Dow. It was designed for etching Cu on PCB's, so is pretty resistant to many etchants. There are many flavors of Riston - the Dow website lists loads of them. PCB hobbyists have lots of websites describing how to use an ordinary laminator (like the one in the lithography area) to apply dry film resists to PCB's. I would imagine that apply dry film resist to a silicon substrate would be similar (for example http://www.thinktink.com/stack/volumes/volvi/rolllam.htm) And there's a reference that may be worth checking out: V.L Spiering, et al. "Planarization and fabrication of bridges across deep grooves or holes in silicon using a dry film photoresist followed by an etch back." J.Micromech. Microeng. 5, 112 (1995). Please do get in touch with me or one of the other staff members, if you'd like to talk more about this. It'd be great if we could document the process fully and have a detailed procedure on how to do this in this lab. Mary Quoting "Matthew D. Robbins" : > Hello-- > > I am interested in learning about photoresist film that can be laminated > onto a wafer. Mahnaz says that the resident expert on this technology is > Tony Flannery. Unfortunately, I have been unable to get intouch with > Tony > by email. If anyone else in the lab has any information on this > technique, > please let me know. > > Thanks, > > Matt > > ***************************** > Matthew D. Robbins > Department of Chemistry > Stanford University > 333 Campus Drive Box 56 > Stanford, CA 94305 > Office: 650-723-4398 > e-mail: mdr at stanford.edu > ***************************** > > From davehong at aol.com Mon Nov 14 14:59:30 2005 From: davehong at aol.com (davehong at aol.com) Date: Mon, 14 Nov 2005 17:59:30 -0500 Subject: wax for KOH etch Message-ID: <8C7B78634BCD485-10C8-C337@MBLK-M38.sysops.aol.com> Dear lab members, I am looking for product names and manufacturers of different types of waxes that can be used to protect wafers during KOH etching. I understand that there is a black wax and a white wax. What are their product names and where can I buy them? Your feedback is much welcomed. best, Dave -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Mon Nov 14 16:19:22 2005 From: mtang at stanford.edu (Mary Tang) Date: Mon, 14 Nov 2005 16:19:22 -0800 Subject: wax for KOH etch In-Reply-To: <8C7B78634BCD485-10C8-C337@MBLK-M38.sysops.aol.com> References: <8C7B78634BCD485-10C8-C337@MBLK-M38.sysops.aol.com> Message-ID: <1132013962.4379298ad9f6f@webmail.stanford.edu> Hi Dave -- The black wax people often use is from Apiezon. However, the recommended stripper for this is trichloroethylene or borothene, and for safety reasons, these are not allowed in our lab. MEMS-talk had this message posting: Hi, Effective solvents for removing Apiezon. Black Wax are Xylene,Toluene (not necessarily hot) and Chlorinated hydrocarbons such as Methylene Chloride and Trichloroethylene. Aliphatic hydrocarbons such as Hexane can also be used but they are not as effective. The Wax is INSOLUBLE in Ketones such as Acetone and in Alcohols such as Ethanol and Iso Propanol. Dave Summers Technical Service Manager Apiezon Products Ltd. Small amount of xylenes and toluene can be used in the lab, under appropriate handling conditions. Hexane can be used. Mary Quoting davehong at aol.com: > Dear lab members, > > I am looking for product names and manufacturers of different types > of waxes that can be used to protect wafers during KOH etching. I > understand that there is a black wax and a white wax. What are their > product names and where can I buy them? > Your feedback is much welcomed. > > best, > > Dave > From lwchang at stanford.edu Thu Nov 17 23:12:51 2005 From: lwchang at stanford.edu (Li-Wen Chang) Date: Thu, 17 Nov 2005 23:12:51 -0800 Subject: HMDS removal Message-ID: <019c01c5ec0f$7d3fe090$22fefea9@LiWen> Dear labmembers, Does any one know if the regular ebeam resist developing process will also strip the HMDS? Thank you for your help, Li-Wen -------------- next part -------------- An HTML attachment was scrubbed... URL: From yueliang at stanford.edu Fri Nov 18 15:07:05 2005 From: yueliang at stanford.edu (Yue Liang) Date: Fri, 18 Nov 2005 15:07:05 -0800 Subject: active probe Message-ID: <0a7401c5ec94$cb4949e0$976240ab@DH2QMX41> Hello all, I am wondering if anyone has an active probe such as the Picoprobe 12C or similar for on-chip probing with high input impedance and low capacitance. Any information would be greatly appreciated! Thanks, Yue From nordlund at snf.stanford.edu Fri Nov 18 16:38:18 2005 From: nordlund at snf.stanford.edu (Dennis Nordlund) Date: Fri, 18 Nov 2005 16:38:18 -0800 Subject: Company for growing thin nitride films Message-ID: Dear labmembers, We are experiencing unacceptable delays in our communication with a company that presumably could grow thin nitride films for us (100nm stressfree both-side on 4'' wafers). If anyone of you know companies in the Bay Area that grow high quality nitride films on Si, I would very much appreciate your suggestion, as we will basically "google" for it otherwise. Thanks, Dennis -- ********************************************************** Dennis Nordlund, PhD Postdoctoral Fellow Stanford Synchrotron Radiation Laboratory (SSRL) http://www.diva-portal.org/su/theses/abstract.xsql?dbid=181 [THESIS] From rcrane at snf.stanford.edu Tue Nov 22 08:56:11 2005 From: rcrane at snf.stanford.edu (Dick Crane) Date: Tue, 22 Nov 2005 08:56:11 -0800 Subject: Chemical use this holiday weekend Message-ID: <43834DAB.3030100@snf.stanford.edu> Labmembers, Please help the next wet bench user have enough chemicals this up coming, Thanksgiving Day, four-day weekend. Please observe the recommended bath changing schedules and we should be OK. If you must change a bath, please check for an adequate supply of refill chemicals before dumping. Dave will be restocking chemicals and supplies Saturday morning to help prevent shortages. Litho area: developer and photoresist refill supplies are in the yellow storage cabinets. Thanks for your help and have a good Thanksgiving Day, Dick From ahazeghi at stanford.edu Tue Nov 22 15:50:41 2005 From: ahazeghi at stanford.edu (Arash Hazeghi) Date: Tue, 22 Nov 2005 15:50:41 -0800 Subject: DUV masks Message-ID: <1132703441.4383aed1ce6f5@webmail> Hello, Does anybody know a vendor for DUV masks, I want to use Karlsuss and feature size is 0.3 um, Thanks, Arash From mtang at stanford.edu Wed Nov 23 08:56:53 2005 From: mtang at stanford.edu (Mary Tang) Date: Wed, 23 Nov 2005 08:56:53 -0800 Subject: Annual Lab Shutdown Schedule Message-ID: <1132765013.43849f550dc5b@webmail.stanford.edu> Greetings Labmembers! The lab will be shutdown at 7 am on Friday, December 16 for annual equipment and facilities maintenance. The lab will open again for business at 7 am on Wednesday, January 4. NO SNF equipment will be available for use during this time (this includes SEM, wafersaw, etc., since this year's schedule includes major power and air shutdowns.) In preparation for the lab shutdown, please make sure ALL your personal items are stored within your personal lab bin or removed from the lab (this includes wafers-in-progress and labware on top of bins and shelves.) Unless you specifically notify us in advance, anything outside of a personal lab bin will be removed from the lab as part of the annual cleanup. Bunnysuits will all be taken down for laundry, so please make sure any personal items stored with your suit (safety glasses, etc.) are removed or secured. For building occupants, a complete power shutdown to the building is scheduled for Monday, December 19. Compressed air is scheduled for shutdown on Tuesday and Wednesdsay (December 20-21), so please protect your equipment accordingly. Let us know if you have any specific questions or special needs regarding this shutdown. Although Maintenance and Facilities will be hard at work making the place tidy and clean, the rest of us plan to enjoy this time off -- and hope that you do too! Your SNF Staff From rfasch at stanford.edu Fri Nov 25 10:42:22 2005 From: rfasch at stanford.edu (Rainer Fasching) Date: Fri, 25 Nov 2005 10:42:22 -0800 Subject: Invitation to Special Lectures on Solid State Electroytes - by Dr. Hong Huang Message-ID: <003d01c5f1f0$0a139df0$0c00a8c0@donau> Dear Colleagues! it is my pleasure to announce that Dr. Huang agreed to give two special lectures on solid state electrolytes with the focus on micro and nano fuel cells next week in the ME420 class for Applied Electrochemistry at Micro- and Nanoscale. You are more than welcome to attend these two lectures. schedule: first lecture on 11-29-05 , 10:30-12:00 will cover the basics on solid state electrolytes and the conductivity mechanisms second lecture on 12-01-05 , 10:30-12:00 will be focused on their applications and developments for fuel cells Building 320 (Braun Hall), Seminar Room 221 (2nd floor) Looking forward to seeing you at these lectures next week Rainer Fasching ---------------------------------------------------------- Rainer Fasching Ph.D Act. Associate Professor Design and Mechanical Engineering Stanford University Building 530, Room 226 Stanford, CA 94305 Tel: (650) 723-1301 Fax: (650) 723-5034 www-rpl.stanford.edu (RPL-Biology) ----------------------------------------------------------- -------------- next part -------------- An HTML attachment was scrubbed... URL: From rfasch at stanford.edu Sat Nov 26 16:52:42 2005 From: rfasch at stanford.edu (Rainer Fasching) Date: Sat, 26 Nov 2005 16:52:42 -0800 Subject: Schedule change of Special Lectures on Solid State Electroytes - by Dr. Hong Huang Message-ID: <002801c5f2ec$e5e28b00$0c00a8c0@donau> Dear Colleagues, Dr. Huang's lectures on solid state electrolytes are rescheduled: first lecture on 12-01-05 , 10:30-12:00 will cover the basics on solid state electrolytes and the conductivity mechanisms second lecture on 12-06-05 , 10:30-12:00 will be focused on their applications and developments for fuel cells Building 320 (Braun Hall), Seminar Room 221 (2nd floor) Looking forward to seeing you at these lectures Rainer Fasching ----- Original Message ----- From: Rainer Fasching To: users at rpl-554i.stanford.edu ; labmembers at snf.stanford.edu Cc: Rainer Fasching Sent: Friday, November 25, 2005 10:42 AM Subject: Invitation to Special Lectures on Solid State Electroytes - by Dr. Hong Huang Dear Colleagues! it is my pleasure to announce that Dr. Huang agreed to give two special lectures on solid state electrolytes with the focus on micro and nano fuel cells next week in the ME420 class for Applied Electrochemistry at Micro- and Nanoscale. You are more than welcome to attend these two lectures. schedule: first lecture on 11-29-05 , 10:30-12:00 will cover the basics on solid state electrolytes and the conductivity mechanisms second lecture on 12-01-05 , 10:30-12:00 will be focused on their applications and developments for fuel cells Building 320 (Braun Hall), Seminar Room 221 (2nd floor) Looking forward to seeing you at these lectures next week Rainer Fasching ---------------------------------------------------------- Rainer Fasching Ph.D Act. Associate Professor Design and Mechanical Engineering Stanford University Building 530, Room 226 Stanford, CA 94305 Tel: (650) 723-1301 Fax: (650) 723-5034 www-rpl.stanford.edu (RPL-Biology) ----------------------------------------------------------- -------------- next part -------------- An HTML attachment was scrubbed... URL: From yenilmez at stanford.edu Tue Nov 29 14:48:20 2005 From: yenilmez at stanford.edu (Erhan Yenilmez) Date: Tue, 29 Nov 2005 14:48:20 -0800 Subject: Dissertation defense -- Erhan Yenilmez, Nov 30th Message-ID: DEPARTMENT OF APPLIED PHYSICS UNIVERSITY PhD DISSERTATION DEFENSE Erhan Yenilmez Research Advisor: Professor H. Dai Title Carbon Nanotube Tips for Scanning Probe Microscopy Wednesday 30 November, 2005 @10:00 A.M. CIS-X Building, Room 101 ABSTRACT Scanning probe microscopy (SPM) is a technique for characterizing the topography of surfaces and detecting forces at nanometer scale. There is need for new kinds of probes to meet the metrology challenges as the size of devices at this scale shrink, new nanostructured materials are introduced and new experiments involving SPM are proposed. Commonly used probes for SPM are sharp crystal tips etched on silicon. Carbon nanotubes that are cylindrical structures of carbon with a few nanometers in width and micrometers in length have been introduced as ultra sharp and long lasting probes for SPM. The structure and the aspect ratio of carbon nanotubes give them desirable mechanical and chemical properties as SPM probes. In this work we investigate a process where we can grow carbon nanotube tips on a wafer of crystal silicon tips using chemical vapor deposition (CVD). We would like to have one individual nanotube protruding from the apex and pointing within a narrow solid angle along the axis of each silicon tip. This corresponds to a narrow window in growth conditions, which yields one nanotube tip for each of the probes on the wafer while avoiding a dense growth of nanotubes around the apex. We identify the key elements to reach this yield as a 10nm layer of silicon oxide on the surface of the cantilever, a nominally 2 Angstroms thick film of cobalt catalyst and a reduction of the catalyst before CVD. We choose ethanol over methane as a carbon feedstock gas for CVD to achieve reproducible results. This wafer scale process has reproducibly been shown to work with over 90% yield. There is still room for improvement of the orientation of the as grown nanotube tips. A method to shorten as grown nanotube tips to a desired length is discussed. The force calibration mode of an atomic force microscope is used to controllably bend and buckle an individual nanotube between the probe cantilever and the surface. An external voltage is applied to cut the end of the mechanically deformed nanotube. This method enables us to make nanotube tips with desired length especially in the 100nm to 500nm range. However, the success rate of this cutting process depends on the initial orientation of the nanotube, and is below 50% for a given batch of as grown nanotube tips. The topographic imaging potential of carbon nanotube tips is demonstrated by imaging a few nanometers wide gap on a cut nanotube lying on a surface. We introduce magnetic force microscopy (MFM) capability for carbon nanotube tips by coating them with cobalt. Commercially available MFM tips are pyramid shaped silicon tips coated with a magnetic thin film. Our metal-coated nanotube tips confines the magnetic material at the tip in a cylindrical volume. This gives a higher resolution in MFM imaging compared to silicon tips where the magnetic material is spread on the surface of a pyramid. We have imaged features as small as 20nm are imaged using these tips on an experimental magnetic recording media, which is one of the best resolutions in MFM reported so far in literature. The yield of the metal coating process is 100% since the electron beam evaporated metal does not damage the nanotube tips if it is incident along the axis of the nanotube tip. Micrometers long and a few nanometers thick as grown nanotube tips do not display high imaging quality. We increase the thickness of these tips by coating with metal to make high aspect ratio tips. We show that these metal-coated tips can be manipulated to point to a desired direction using focused ion beam. We demonstrate the high-aspect ratio imaging capability of these tips on micrometers deep holes on micro-machined surfaces and tall structures biological samples. -- From gaurav at ee.ucla.edu Tue Nov 29 23:52:12 2005 From: gaurav at ee.ucla.edu (gaurav at ee.ucla.edu) Date: Tue, 29 Nov 2005 23:52:12 -0800 (PST) Subject: Selective Epitaxy of Silicon and SiGe Message-ID: <1191.67.170.226.247.1133337132.squirrel@67.170.226.247> Hi all, I am looking for someone, who is doing selective epitaxy of Si or SiGe using ASM epi reactor. I want to discuss about recipe for SEG process. I would really appreciate if someone can help me for making SEG recipe, who has direct experience with it. Thanks a lot. ~Gaurav Gupta