From anojeh at stanford.edu Sat Oct 1 11:51:37 2005 From: anojeh at stanford.edu (Alireza Nojeh) Date: Sat, 1 Oct 2005 11:51:37 -0700 (PDT) Subject: [labmembers] high-voltage op-amps? Message-ID: Hi all, I am trying to make a buffer (or amplifier, but I don't care much about the gain) with very low input leakage current ( < 1nA ) that can take a couple of hundreds of volts at the input. Does anyone have any recommenation for op-amps? Many thanks, Ali From junxian at stanford.edu Sun Oct 2 18:46:36 2005 From: junxian at stanford.edu (Junxian Fu) Date: Sun, 2 Oct 2005 18:46:36 -0700 Subject: spin coating liquid metal on quartz Message-ID: <00a101c5c7bc$4ae52f00$8e9f0c80@junxianqiqi> Hi, all, Is there anybody having experience on spin coating liquid metal (gallium, for example) on quartz? The goal is to make a relatively uniform layer (less than 1um) at temperature a little bit higher than room-temperature. How about the edge-beads and hump behavior? Relationship between spin speed and layer thickness? Thanks a lot, Junxian -------------- next part -------------- An HTML attachment was scrubbed... URL: From grupp at snowmass.stanford.edu Mon Oct 3 08:37:42 2005 From: grupp at snowmass.stanford.edu (Dan Grupp) Date: Mon, 3 Oct 2005 08:37:42 -0700 Subject: [labmembers] high-voltage op-amps? In-Reply-To: References: Message-ID: I have always used Apex Microtechnology opamps. Excellent high power opamps. -dan http://eportal.apexmicrotech.com/mainsite/index.asp >Hi all, > >I am trying to make a buffer (or amplifier, but I don't care much about >the gain) with very low input leakage current ( < 1nA ) that can take a >couple of hundreds of volts at the input. Does anyone have any >recommenation for op-amps? > >Many thanks, >Ali -- --------------------------------------------------------------------------- Dr. Daniel Grupp, Visiting Scholar Center for Integrated Systems Stanford University Stanford, CA 94305 (650) 724-6911 FAX: 723-4659 --------------------------------------------------------------------------- From mtang at snf.stanford.edu Mon Oct 3 12:02:44 2005 From: mtang at snf.stanford.edu (Mary Tang) Date: Mon, 03 Oct 2005 12:02:44 -0700 Subject: SNF Workshop on Oct. 20: From Prototype to Product Message-ID: <43418054.5080600@snf.stanford.edu> Hi everyone -- Just a reminder that the P2P ("Prototype to Product") workshop will be held here on Thursday, Oct. 20, from 8:30 am to 5 pm. For more information about the program, check the website at: http://snf.stanford.edu/Labmembers/P2PDay.html The event is free to SNF labmembers and members of the Stanford community (everyone from outside the SNF and Stanford communities is welcome as well, although we do ask for a nominal registration fee to help cover the cost of holding this event). Space is limited (basically, to the size of the CISX Auditorium -- and we are already half-full now), so we recommend preregistering. If you're a labmember, just send me an email with your Coral login to register. Hope to see you there! Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From baylortriplett at earthlink.net Mon Oct 3 12:31:12 2005 From: baylortriplett at earthlink.net (Baylor Triplett) Date: Mon, 03 Oct 2005 12:31:12 -0700 Subject: spin coating liquid metal on quartz In-Reply-To: <00a101c5c7bc$4ae52f00$8e9f0c80@junxianqiqi> References: <00a101c5c7bc$4ae52f00$8e9f0c80@junxianqiqi> Message-ID: <43418700.1010001@earthlink.net> Junxian, What you want to do sounds very difficult indeed. Ga, like mercury, has high surface tension and does not wet a hydrophillic surface such as quartz. By contrast, it can wet metallic surfaces as long as their is not serious interference from the formation of alloys. So, like mercury, Ga will tend to form little balls (generally much bigger than 1 micron) on the quartz and not tend to wet it. I have used Ga and Ga-In alloys to make metallic contact to the back of pure Ge detectors...typically by scratching the Ge oxide off the surface so the Ga will wet the metallic Ge in spots. Even here you cannot get a smooth flat surface like a true supercooled liquid. In trying to approach Ga on quartz, you might try to get a very thin metallic layer on the quartz, this can be achieved by something like Cr-gold. That is depositing 50 A of Cr to bond to the oxide in the quartz and then 100 A of Au to bond to the metallic character of the Cr top surface. This uses the Cr as an adhesion layer to switch from one type of bonding to the other. Alternatively, you could a chemical adhesion promoting layer to try to do the same thing (but these can be harder to make work in all situations. ) Once a Cr-Au layer (or maybe Cr-Pt might be better) is deposited , you might be able to spin a wetting layer of Ga on the surface of the Au or Pt. I do not know enough about why you want to do this to comment further at this point. In my case, the purpose of the contact was to form a liquid metal metallic contact that would not harden and damage the sensitive detectors as they were cooled to liquid He temperatures. Regards, Baylor Triplett Junxian Fu wrote: > Hi, all, > Is there anybody having experience on spin coating liquid metal > (gallium, for example) on quartz? The goal is to make a relatively > uniform layer (less than 1um) at temperature a little bit higher than > room-temperature. How about the edge-beads and hump behavior? > Relationship between spin speed and layer thickness? > > Thanks a lot, > Junxian From rissman at stanford.edu Mon Oct 3 17:01:15 2005 From: rissman at stanford.edu (Paul Rissman) Date: Mon, 03 Oct 2005 17:01:15 -0700 Subject: SBIR grant lab fee rates Message-ID: <6.2.1.2.2.20051003165404.0798e090@rissman.pobox.stanford.edu> Labmembers As you know, SNF raised the lab fee rates last January in order to get the lab's budget into balance. We are confident now that, with the expense cuts we have implemented and the new rate structure, we should have a balanced budget on a month-to-month basis. SNF and NNIN would like to encourage new users of the lab, especially from start-up companies which may be in their initial phase and supported by SBIR (Small Business Innovation Research) grants. At the September, 2005 SNF advisory committee meeting, a new rate structure for SBIR supported projects was approved. This rate will be $110/hour up to the 30 hour monthly industrial cap or $3300/month. The SBIR grant users will be subject to notch cap rates for equipment use of more than 160 hours/month at $11/hour. With the present 56% Stanford overhead rate, the totally monthly charge for capped SBIR grant funded users will be $5148. This represents a 32% reduction in the normally charged industrial rate and is effective October, 2005. If your project has a valid SBIR grant, bring a copy of the paperwork to Maureen Baran so she can set up a new account for you which will come under this special rate structure. We will need a copy of the paperwork to ensure that we can meet any potential government audit requirements. By the way, I stressed project in the above paragraph since if a company has only one project with SBIR support and other work unsupported by SBIR grant, only the SBIR project related lab equipment time would come under the new rate. Please let me know if you have any questions or concerns. Paul Rissman -------------- next part -------------- An HTML attachment was scrubbed... URL: From rcrane at snf.stanford.edu Thu Oct 6 13:54:49 2005 From: rcrane at snf.stanford.edu (Dick Crane) Date: Thu, 06 Oct 2005 13:54:49 -0700 Subject: HEPA air reduction in off-hours Message-ID: <43458F19.2050606@snf.stanford.edu> Fab users, HEPA air flow will be reduced during off-hours starting 10/17/05. I wish to announce a change in facilities operation concerning air flow through the HEPA filters during off-hours as an energy cost reduction measure. We followed a similar procedure during the '80s and 90's. About eight years ago changes in the control system caused us to stop the reductions. The plan is to reduce HEPA air flow by 50% from 2300 to 0700 MTWThF and all day Saturday and Sunday. Exhaust air flow will not be affected. This change will implemented starting Monday evening, 10/17/05. Discussion: Even though this procedure has been followed in the past, we have recently measured particle counts at full HEPA air flow during the day and at 50% flow during the night. The particle counts were very similar throughout the cleanroom. In both cases the cleanroom qualified as a class 100 facility in litho, etch, and diffusion aisles as expected. The thin film and epi aisles qualified as class 1000 as expected. What will change is the cleanroom's ability to recover quickly from a particle assault. Given the low number of fab users during these off-hours, this should be a not a problem. Energy cost saving is projected to be $7k-$10k/year. Thanks for your cooperation, Dick From fatih at stanford.edu Thu Oct 6 23:25:32 2005 From: fatih at stanford.edu (Mehmet Fatih Yanik) Date: Thu, 6 Oct 2005 23:25:32 -0700 Subject: Nanophotonics for Communications and Medicine: Monday 4pm Message-ID: <200510070625.j976PYsF028607@smtp1.Stanford.EDU> DEPARTMENT OF APPLIED PHYSICS UNIVERSITY PhD. DISSERTATION DEFENSE Mehmet Fatih Yanik Nanophotonics for Communications and Medicine Monday October 10th at 4:15pm (Refreshments at 4pm) Applied Physics Department Room: AP200 ABSTRACT The use of dynamic photonic bandgap nano-structures opens exciting new possibilities for controlling both the classical and quantum properties of light. The spectrum of light can be molded almost arbitrarily with small refractive index modulations, leading to unprecedented information processing capabilities on-chip. As examples of such capabilities, I will show how light pulses can be coherently stopped, stored, and time-reversed with linear optics and modulators. Photonic bandgap nano-structures can confine photons to sub-micron scale volumes, which leads to ultra-strong enhancement of optical non-linearities. I will discuss how such non-linearities can be used to make fast low power micron scale photonic switches and memories. I will also show how these devices can be systematically cascaded on-chip without optical isolators, even in the presence of reflections. In the rest of the talk, I will introduce the femtosecond laser nano-surgery technique which allows surgical operations below the diffraction limit of light. I will present how this technique, for the first time, enabled study nerve regeneration, in its evolutionarily simplest form, by cutting nano-scale nerve connections in a tiny organism called C. elegans, and led to very unusual observations. http://www.stanford.edu/~fatih -------------- next part -------------- An HTML attachment was scrubbed... URL: From rcrane at snf.stanford.edu Mon Oct 10 09:35:47 2005 From: rcrane at snf.stanford.edu (Dick Crane) Date: Mon, 10 Oct 2005 09:35:47 -0700 Subject: Construction outside CIS/CISX Message-ID: <434A9863.5050102@snf.stanford.edu> So, what's with all the noise, fences, and construction equipment on Via Palou and Via Pueblo? What we are experiencing is the facilities upgrade for the new Science and Engineering Quad 2 (SEQ2). Commencing in May of 2006, four new SoE buildings will be constructed, over an eight year period, in the space currently occupied by Ginzton Lab, HEPL, Gravity Probe B and the A and C permit parking lot at Via Ortega and Panama St. New utility conduit runs are being placed along Via Palou, Via Pueblo, and Via Ortega. Storm drains are being upgraded. The work in front of CIS/CISX should be complete in two months. The hackberry trees have been temporarily moved and will replanted back along Via Palou when construction is finished. Via Pueblo and Via Ortega will soon be closed for construction. The work schedule is being revised due to material and labor issues resulting from the recent hurricanes in the gulf coast. For more details of SEQ2, please go to http://news-service.stanford.edu/news/2005/february9/seq-020905.html Thanks, Dick Crane From piecoco at stanford.edu Mon Oct 10 11:59:36 2005 From: piecoco at stanford.edu (Minhwan Lee) Date: Mon, 10 Oct 2005 11:59:36 -0700 Subject: Lock-in amplifier (SR844) Message-ID: <002a01c5cdcc$c26fdaa0$eeac0c80@piecoco> Hello. all, I know it is not a proper email to send out to all snf members but couldn't help it. Sorry to bother you all. I am wondering whether any of you happen to have a SR844 lock-in amplifier (vendor: Stanford Research Systems), if so, whether we can rent it for a few days. We actually need it now but the vendor wouldn't have one in stock until three weeks from now. Please help us out if you have one, and best luck on everything you do! Best regards, Minhwan Lee -------------- next part -------------- An HTML attachment was scrubbed... URL: From kaima at stanford.edu Mon Oct 10 14:32:08 2005 From: kaima at stanford.edu (Kai Ma) Date: Mon, 10 Oct 2005 14:32:08 -0700 Subject: any CVD tools to deposit carbon films? Message-ID: <1128979928.434addd8dabac@webmail.stanford.edu> Dear labmembers, I hope to deposit some carbon films in a CVD chamber. Browsed the snf website but couldn't find a suitable tool. Does anybody know if there is a CVD tool in Stanford community that have carbon-rich precursors to deposit carbon films? It does not necessarily only exist inside CIS. Any information lead is appreciated! Many thanks! Kai From mtang at snf.stanford.edu Tue Oct 11 07:58:32 2005 From: mtang at snf.stanford.edu (Mary Tang) Date: Tue, 11 Oct 2005 07:58:32 -0700 Subject: Reminder: Oct. 20 Workshop -- From Prototype to Product Message-ID: <434BD318.9060700@snf.stanford.edu> Hi everyone -- Just yet another reminder that the P2P ("Prototype to Product") workshop will be held here on Thursday, Oct. 20, from 8:30 am to 5 pm. For more information about the program, check the website at: http://snf.stanford.edu/Labmembers/P2PDay.html The event is free to SNF labmembers and members of the Stanford community (everyone from outside the SNF and Stanford communities is welcome as well, although we do ask for a nominal registration fee to help cover the cost of holding this event). Space is limited (to the size of the CISX Auditorium -- and we are 3/4 now), so we recommend preregistering. If you're a labmember,just send me an email with your Coral login to register. Hope to see you there! Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mbaran at stanford.edu Tue Oct 11 12:00:07 2005 From: mbaran at stanford.edu (Maureen Baran) Date: Tue, 11 Oct 2005 12:00:07 -0700 Subject: Found Items in the Lab Message-ID: <200510111900.j9BJ08Ik018274@smtp3.Stanford.EDU> Some items have been found in the lab and if they are yours please come by my cubicle and pick them up. One is a memory stick on a lanyard and the other item is a Motorola flip phone. I would call the last numbered dialed however, the phone is completely dead. If you think either of these items is yours please come and claim them after 1:00P today. Thank you, Maureen Maureen Baran Stanford Nanofabrication Facility Lab Services Administrator mbaran at stanford.edu 650-725-3664 -------------- next part -------------- An HTML attachment was scrubbed... URL: From sunaeseo at stanford.edu Wed Oct 12 04:22:25 2005 From: sunaeseo at stanford.edu (sunae seo) Date: Wed, 12 Oct 2005 04:22:25 -0700 Subject: dry etch In-Reply-To: <1128979928.434addd8dabac@webmail.stanford.edu> Message-ID: <200510121122.j9CBMRY7009384@smtp-roam.Stanford.EDU> I want to dryetch of Pt metal. Someone please let me know what equipment I can use in SNF. ============================================================= SUNAE SEO. PH.D CIS #105, 420 Via Palou Stanford University Stanford CA 94305-4070 sunaeseo at stanford.edu Mobile: 1-650-704-4313 Work : 1-650-725-5725 ============================================================== From xzhuang at stanford.edu Wed Oct 12 09:37:28 2005 From: xzhuang at stanford.edu (Steve Zhuang) Date: Wed, 12 Oct 2005 09:37:28 -0700 Subject: questions on LOCOS process References: <200510111900.j9BJ08Ik018274@smtp3.Stanford.EDU> Message-ID: <001101c5cf4b$3be18760$bb5640ab@pky7> Dear Lab Members, I have a couple of very basic questions regarding the LOCOS process: 1) What is the thickness of the oxide underneath the nitride layer. 2) What is the thickness of the nitride layer which can block the oxide diffusion efficiently? If you happen to know the process, could you kindly let me know the answers? Thanks! Steve Zhuang -------------- next part -------------- An HTML attachment was scrubbed... URL: From aflannery at invensense.com Wed Oct 12 18:31:39 2005 From: aflannery at invensense.com (aflannery at invensense.com) Date: Wed, 12 Oct 2005 18:31:39 -0700 Subject: Al/Cu Message-ID: <000201c5cf95$dcc2d540$8f01a8c0@Ibscus3> All, I have a couple of die which have a blanket layer of Al/Si/Cu (97/2/1 - I think). As many of you probably already know, the Aluminum Etch stocked by SNF does not etch Cu doped Al. I need to protect some parts of the die (bond pad area) with resist, so anything more aggressive that would etch it (like HCl or HF) would also attack the resist. Does anyone have a small quantity (50 -100 ml) of the Al etchant formulate for Al/Cu they'd be willing to share? Any other suggestions? Thanks for any suggestions, Tony Anthony F. Flannery Jr. Invensense, Inc. 2900 Gordon Ave., Suite 203 Santa Clara, CA 95051 Work: 408-720-8482 ext. 203 Cell: 408-515-4026 Fax: 408-720-8738 -------------- next part -------------- An HTML attachment was scrubbed... URL: From xjyu at stanford.edu Thu Oct 13 15:18:00 2005 From: xjyu at stanford.edu (Xiaojun Yu) Date: Thu, 13 Oct 2005 15:18:00 -0700 Subject: Ph.D. Oral Examination --Xiaojun Yu (Tuesday,October 25, 2005, 9:15AM) References: <00e401c4d64b$14c14c00$5f6340ab@plumbpc5> Message-ID: <017601c5d043$f9102be0$0100000a@yuer> Department of Materials Science and Engineering University PhD Dissertation Defense MBE growth of III-V materials with orientation-patterned artificial structure for nonlinear optics Xiaojun Yu Advisor: Prof. James S. Harris, Jr Tuesday, October 25, 2005 9:15AM (refreshments served at 9AM) Center for Integrated Systems Extension (CISX) Auditorium There are numerous applications of nonlinear optical frequency conversion in the infrared, ranging from generation of coherent radiation for spectroscopy and military applications, to wavelength conversion in communication systems. Semiconductors such as AlxGa1-xAs and GaP have excellent properties for nonlinear frequency conversion, in particular large nonlinear coefficients and transparency throughout the mid-infrared. However, due to the absence of birefringence, quasi-phasematching (QPM) has to be used for the phasematching, requiring a modulation of the sign of the nonlinear coefficient along the material. In this work we have developed an all-epitaxial process to fabricate orientation-patterned AlxGa1-xAs and orientation-patterned GaP structures, used for both bulk-like and waveguide devices. Various nonlinear optical interactions have been demonstrated which show that orientation-patterned AlxGa1-xAs is a promising candidate for infrared applications. Our orientation-patterned GaAs template is fabricated in three steps. First, we use the polar-on-nonpolar growth of GaAs/Ge/GaAs heterostructure to control the lattice inversion. The orientation pattern is then defined by a combination of photolithography and a series of selective chemical etching steps. Template and waveguide growth is completed in the MBE regrowth. Critical regrowth issues are elimination of antiphase defects within each single domain of the template while still maintaining the induced antiphase domains at the pattern boundaries. Appropriate growth conditions were developed which met this challenges and produced vertical propagation of domain boundaries under all MBE conditions tested. Low corrugation template has been achieved by optimizing the growth conditions of GaAs on Ge. QPM periods demonstrated are short enough to phasematch any interaction in the transparency range of AlxGa1-xAs. Using this technique, low loss AlxGa1-xAs QPM waveguide devices were fabricated and second harmonic generation was demonstrated from a pump laser at 1.55 ?m. A waveguide loss, ~4.5 dB/cm at 1.55 ?m, was measured, which is close to that of the unpatterned waveguides. A record-high conversion efficiency, 43 %W-1, was demonstrated. These achievements provide solid basis for the fabrication of highly efficient nonlinear optical devices based on the GaAs material system. -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Xiaojun Yu-Oral-abstract.pdf Type: application/pdf Size: 65229 bytes Desc: not available URL: From sanli at stanford.edu Fri Oct 14 10:47:35 2005 From: sanli at stanford.edu (Arif Sanli Ergun) Date: Fri, 14 Oct 2005 10:47:35 -0700 Subject: wire bonding Message-ID: <6.1.2.0.2.20051014104533.01cb0c68@sanli.pobox.stanford.edu> Hi everybody, Do you know a place that does wire-bonding on- or off-campus, other than Pauline, with quick return. Pauline is on vacation and we need wire bonding very urgently. Sanli From kcrabb at stanford.edu Fri Oct 14 13:38:39 2005 From: kcrabb at stanford.edu (Kevin Crabb) Date: Fri, 14 Oct 2005 13:38:39 -0700 Subject: Lost Wafer Holder for KOH Etch Message-ID: Hello All, I have lost/misplaced a 4" wafer holder used to protect the backside of a wafer during KOH silicon etching. The holder was last seen 2-3 weeks ago; it was most likely left on the bench across from wet bench general. It is not in any of the Lost and Found bins. If you have seen this holder, please let me know. I've attached a picture of a similar holder, so you can see what it looks like. Although it seems like a simple piece, it comes from Europe and costs several thousand dollars, so helping me find it would be greatly appreciated. Thank you, Kevin kcrabb at stanford.edu -------------- next part -------------- A non-text attachment was scrubbed... Name: wafer holder.JPG Type: image/jpeg Size: 336886 bytes Desc: not available URL: From amf at amfitzgerald.com Sun Oct 16 22:18:28 2005 From: amf at amfitzgerald.com (Alissa M. Fitzgerald) Date: Sun, 16 Oct 2005 22:18:28 -0700 Subject: Next SNF User's Meeting - Thursday, Oct 27, 4-5pm, CIS 101 Message-ID: Hello Labmembers, There will be a SNF user's meeting on Thursday, Oct 27th, from 4-5 pm, in CIS 101. All are welcome to attend. Agenda -Process monitoring. We are going to discuss an action plan for how best to implement monitoring on select tools. If you have some interest in process control issues, please be sure to attend this meeting. -Spec Mat information dissemination - continue discussion -Need for a SNF Policies page on website: several key user issues need official clarification -Equipment status update -Problems/concerns/suggestions Announcements from last meeting: -CMP access is available at Ginzton -In ~ 2 weeks, expect to have gold-contaminated FGA up -Only 60% of innotec reservations are actually used. This bad behavior is drawing attention from on high. Action items from last meeting: -There is high interest in implementing process monitoring on some lab tools. Much user frustration at lost time and money due to particles, out of spec equipment, obsolete data sheets, etc. -Would like to see Spec Mat information gathered on a searchable webpage/database so that users have more information and visibility into past approvals/denials for particular materials. Active discussion on how best to disseminate info. **Mark your calendars for October 20th, a special one day event at the SNF: "From Prototype to Product" http://snf.stanford.edu/Labmembers/P2PDay.html Hope to see you there! Regards, Alissa Fitzgerald Alissa M. Fitzgerald, Ph.D. A.M. Fitzgerald & Associates, LLC Technical Consulting Services MEMS | Materials | Sensor Systems 655 Skyway Suite 118 San Carlos, CA 94070 (650) 592-6100 tel/fax www.amfitzgerald.com -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Tue Oct 18 13:14:00 2005 From: mtang at stanford.edu (Mary Tang) Date: Tue, 18 Oct 2005 13:14:00 -0700 Subject: Reminder: P2P Workshop, this Thursday Message-ID: <1129666440.435557882c95e@webmail.stanford.edu> Hi everyone -- Just a reminder that the P2P Workshop is this Thursday, starring our very own Eric Perozziello (moderating the morning session -- now have any of us ever seen him here before 11 am? This may be your only chance...) and Alissa Fitzgerald (who will be persuading our afternoon panelists to divulge their deepest, darkest secrets about tech transfer.) We're not quite full, and have room for a few more. We'll be taking registrations at the door, in case of no-shows. Remember -- it's free to you and open to the public, so your non-SNF friends and collaborators are also welcome. More info at: http://snf.stanford.edu/Labmembers/P2PDay.html Hope to see you there -- it'll be fun! Mary From sbank at stanford.edu Sun Oct 23 11:43:25 2005 From: sbank at stanford.edu (Seth Bank) Date: Sun, 23 Oct 2005 11:43:25 -0700 Subject: University Oral Examination - Seth Bank (November 1, 2005 1:30PM) Message-ID: <5.2.1.1.2.20051023113604.03d1dc60@sbank.pobox.stanford.edu> Special University Oral Examination Seth R. Bank Department of Electrical Engineering Stanford University Tuesday, November 1, 2005 1:30 PM (Refreshments served at 1:15 PM) Center for Integrated Systems Extension (CISX) Auditorium (Rm. 101X) "High-Performance 1.55-um GaAs-Based Lasers" Next-generation local and metro-area optical networks require high-performance lasers, detectors, and modulators operating at ~1.55 um. In contrast to long-haul networks, components must be very inexpensive, power efficient, and producible in high volumes - all with little sacrifice to performance. Two classes of lasers are required. The first is low-power (~1-10 mW) 1.55 um communication sources, such as vertical-cavity surface-emitting lasers (VCSELs), that must be insensitive to ambient temperature and operable at high modulation rates. The second class is higher output power (>300 mW) lasers emitting at shorter wavelengths (~1.48 um) for pumping Raman and doped fiber amplifiers. This seminar describes the development of a novel GaAs-based gain material, GaInNAs(Sb), that is ideal for both applications. Material growth is challenging, but optical quality can be improved dramatically through the introduction of antimony and other growth enhancements that will be discussed. We demonstrate the first low-threshold GaAs-based lasers from 1.45-1.55 um. Laser threshold current densities are as low as 440 A/cm^2 -- comparable, if not superior, to commercially available InP-based devices. High continuous-wave output powers >400 mW, more than sufficient for amplifier applications, are achieved from even simple single quantum well structures. Laser results at 1.55 um validate this new materials system for use in VCSEL sources as well. Studies of the temperature stability of these devices will also be presented. ---------------------------------------------------------------------------- Seth Bank sbank at stanford.edu Doctoral Candidate Ph: 650-725-8313 James S. Harris Group Fax: 650-723-4659 Electrical Engineering Stanford University CIS-X Rm. 126X Via Ortega Stanford, CA 94305-4075 -------------- next part -------------- A non-text attachment was scrubbed... Name: Bank-Orals_Abstract.pdf Type: application/pdf Size: 70588 bytes Desc: not available URL: From xjyu at stanford.edu Mon Oct 24 00:22:45 2005 From: xjyu at stanford.edu (Xiaojun Yu) Date: Mon, 24 Oct 2005 00:22:45 -0700 Subject: Ph.D. Oral Examination --Xiaojun Yu (Tuesday,October 25, 2005, 9:15AM) Message-ID: <002201c5d86b$bb3d6370$0100000a@yuer> Department of Materials Science and Engineering University PhD Dissertation Defense MBE growth of III-V materials with orientation-patterned artificial structure for nonlinear optics Xiaojun Yu Advisor: Prof. James S. Harris, Jr Tuesday, October 25, 2005 9:15AM (refreshments served at 9AM) Center for Integrated Systems Extension (CISX) Auditorium There are numerous applications of nonlinear optical frequency conversion in the infrared, ranging from generation of coherent radiation for spectroscopy and military applications, to wavelength conversion in communication systems. Semiconductors such as AlxGa1-xAs and GaP have excellent properties for nonlinear frequency conversion, in particular large nonlinear coefficients and transparency throughout the mid-infrared. However, due to the absence of birefringence, quasi-phasematching (QPM) has to be used for the phasematching, requiring a modulation of the sign of the nonlinear coefficient along the material. In this work we have developed an all-epitaxial process to fabricate orientation-patterned AlxGa1-xAs and orientation-patterned GaP structures, used for both bulk-like and waveguide devices. Various nonlinear optical interactions have been demonstrated which show that orientation-patterned AlxGa1-xAs is a promising candidate for infrared applications. Our orientation-patterned GaAs template is fabricated in three steps. First, we use the polar-on-nonpolar growth of GaAs/Ge/GaAs heterostructure to control the lattice inversion. The orientation pattern is then defined by a combination of photolithography and a series of selective chemical etching steps. Template and waveguide growth is completed in the MBE regrowth. Critical regrowth issues are elimination of antiphase defects within each single domain of the template while still maintaining the induced antiphase domains at the pattern boundaries. Appropriate growth conditions were developed which met this challenges and produced vertical propagation of domain boundaries under all MBE conditions tested. Low corrugation template has been achieved by optimizing the growth conditions of GaAs on Ge. QPM periods demonstrated are short enough to phasematch any interaction in the transparency range of AlxGa1-xAs. Using this technique, low loss AlxGa1-xAs QPM waveguide devices were fabricated and second harmonic generation was demonstrated from a pump laser at 1.55 ?m. A waveguide loss, ~4.5 dB/cm at 1.55 ?m, was measured, which is close to that of the unpatterned waveguides. A record-high conversion efficiency, 43 %W-1, was demonstrated. These achievements provide solid basis for the fabrication of highly efficient nonlinear optical devices based on the GaAs material system. -------------- next part -------------- An HTML attachment was scrubbed... URL: From amf at amfitzgerald.com Mon Oct 24 14:46:52 2005 From: amf at amfitzgerald.com (Alissa M. Fitzgerald) Date: Mon, 24 Oct 2005 14:46:52 -0700 Subject: Reminder: SNF User's Meeting - Thursday, Oct 27, 4-5pm, CIS 101 Message-ID: Hello Labmembers, There will be a SNF user's meeting on Thursday, Oct 27th, from 4-5 pm, in CIS 101. All are welcome to attend and you are strongly encouraged to come if you have input on any of the agenda items. Agenda -Process monitoring. If you have input or concerns about process control issues, please be sure to attend this meeting. We are going to start by scoping the problem so we can give constructive input to the SNF staff. -Spec Mat information dissemination - continue discussion -Need for a SNF Policies page on website: several key user issues need official clarification, particularly how fees are handled for aborted/failed runs due to equipment failure. -Equipment status update: furnace issues, particles, cleanliness, planned release dates for new tools -Problems/concerns/suggestions Hope to see you there! Regards, Alissa Fitzgerald Alissa M. Fitzgerald, Ph.D. A.M. Fitzgerald & Associates, LLC Technical Consulting Services MEMS | Materials | Sensor Systems 655 Skyway Suite 118 San Carlos, CA 94070 (650) 592-6100 tel/fax www.amfitzgerald.com -------------- next part -------------- An HTML attachment was scrubbed... URL: From rissman at stanford.edu Tue Oct 25 08:46:56 2005 From: rissman at stanford.edu (Paul Rissman) Date: Tue, 25 Oct 2005 08:46:56 -0700 Subject: Coral access Message-ID: <6.2.1.2.2.20051025084350.0242d9b0@rissman.pobox.stanford.edu> Hi All, Apparently the Sun server which supports the sunray terminals failed last night. CORAL IS STILL RUNNING. Bill Murray is trying to get the server fixed, but in the meantime you can get access to Coral using remote Coral. We will let you know as soon as possible if there is any change. If you have questions, please ask the SNF staff. Paul Rissman From rissman at stanford.edu Tue Oct 25 10:43:07 2005 From: rissman at stanford.edu (Paul Rissman) Date: Tue, 25 Oct 2005 10:43:07 -0700 Subject: Coral terminals Message-ID: <6.2.1.2.2.20051025104109.02427568@rissman.pobox.stanford.edu> Hi All, Bill Murray has contacted Sun and we expect a repair person before noon. In the meantime, please try to use remote Coral to log on to Coral. There is a terminal in at the Raith system if you don't have a laptop. Thanks for your patience. Paul From bwacker at sbcglobal.net Tue Oct 25 13:01:54 2005 From: bwacker at sbcglobal.net (Barbara Wacker) Date: Tue, 25 Oct 2005 13:01:54 -0700 (PDT) Subject: Small samples carriers Message-ID: <20051025200154.16339.qmail@web81304.mail.yahoo.com> Hello, I am looking for a teflon or similar acid resistant material sample carrier for small substrates. I found a company Entegris but the smallest quantity they sell is 100 pieces of each. Please let me know if you know about a vendor that sells sample carriers in smaller quantities. My substrate range from 10mm to 40mm and are square. I will appreciate your help! Thanks, Barbara From rissman at stanford.edu Tue Oct 25 13:18:13 2005 From: rissman at stanford.edu (Paul Rissman) Date: Tue, 25 Oct 2005 13:18:13 -0700 Subject: Coral terminals Message-ID: <6.2.1.2.2.20051025131738.02b17008@rissman.pobox.stanford.edu> Hi All, The Sun server has been fixed and the Coral terminals are now up. Paul From okilic at stanford.edu Tue Oct 25 13:56:28 2005 From: okilic at stanford.edu (Onur Kilic) Date: Tue, 25 Oct 2005 13:56:28 -0700 Subject: PolySilicon question Message-ID: <1130273788.435e9bfcceb6e@webmail.stanford.edu> Hi, I would like to use polysilicon for optical devices. Is there anyone who has experience with getting an optical quality surface with some Poly receipe? Also, do you know what kind of stress (tensile, compressive, ? MPa) one gets with using such a receipe?? Your help is appreciated. Thanks a lot, Onur -- Onur Kilic PhD Candidate Applied Physics Stanford University http://onurkilic.com From vlordi at snow.stanford.edu Fri Oct 28 14:58:14 2005 From: vlordi at snow.stanford.edu (Vincenzo Lordi) Date: Fri, 28 Oct 2005 14:58:14 -0700 Subject: Picoprobe Model 12C Message-ID: Hello, I am in urgent need of an active probe such as the Picoprobe 12C or similar for on-chip probing with at least a few hundred MHz bandwidth. Lead time on a purchase is 4-5 weeks. If anyone has something I could borrow for a few days in the meantime, I would greatly appreciate it. Thanks, -Vince From mtang at snf.stanford.edu Fri Oct 28 16:07:26 2005 From: mtang at snf.stanford.edu (Mary Tang) Date: Fri, 28 Oct 2005 16:07:26 -0700 Subject: Labmember Survey Results Message-ID: <4362AF2E.7000506@snf.stanford.edu> Greetings labmembers! Many thanks to those of you who participated in our labmember survey. And many apologies for delaying in posting the responses (we'd hoped to post them on the new/improved website, but it's taken longer than anticipated to get this all together.) There are a number of interesting observations about the results of this survey. For example, there appears to be (not surprisingly) two main subcommunities: the "MEMS" group and an "Electronics" group -- this is especially apparent in the ranking/preferences of equipment priorities. Also very interesting: it seems that about 30% of respondents have been labmembers for 12 months or less, and nearly 80% of labmembers don't cap. Overall, most aspects of the lab were rated "Good" to "Excellent" (a significant improvement over the last time the survey was administered about two years ago.) To view the survey results, follow this link: http://snf.stanford.edu/Labmembers/Survey.html Your comments would be much appreciated. I will post them on the website, if you email them to me. Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From amf at amfitzgerald.com Fri Oct 28 17:28:52 2005 From: amf at amfitzgerald.com (Alissa M. Fitzgerald) Date: Fri, 28 Oct 2005 17:28:52 -0700 Subject: =?us-ascii?Q?Keynote_address_by_Dr._David_Lam:_=22Marketing_Strategies_fo?= =?us-ascii?Q?r_High_Tech_Start-ups=22_:_MIT_Club_event_11/10=2C_7pm=2C_Pa?= =?us-ascii?Q?lo_Alto?= Message-ID: Dear Labmembers, Use the lampoly etcher? Come meet the Silicon Valley icon whose company builds it. This event is *open to the public.* Follow the links below to register. Regards, Alissa MIT Club of Northern California Semiconductor Entrepreneurship Series presents: "Marketing Strategies for High Tech Start-ups" A Keynote Talk by Dr. David K. Lam Date: Thursday, November 10, 2005 Event Time: 7:00 p.m. Registration/Networking: begins at 6:30PM Venue: Cooley Godward LLP Location: 3175 Hanover Street, Palo Alto, CA 94306 Directions: http://www.cooley.com/about/office_detail.aspx?OfficeID=000000132003 Contact: edk at pennwell.com Cost: $20 preregistration/$30 at the door (includes food/beverage) Online registration at: http://www.mitcnc.org/Events_Single.asp?eventID=1188 Dr. David K. Lam, founder of Lam Research Corp. and industry luminary, is an investor and adviser for high tech start-ups. He will present a keynote address on the challenges facing early-stage ventures in marketing their very first product. The talk will describe perilous temptations to which many entrepreneurs fall prey in marketing a new product, and superior strategies that can be used to successful fight the marketing battle. Examples will be drawn from semiconductor equipment companies and other ventures. Be forewarned that some recommendations fly in the face of conventional wisdom and are counter-intuitive. Keynote Speaker Biography: David Lam founded Lam Research in 1980. Under his guidance as CEO, the company introduced the industry's first fully-automated plasma etching system for semiconductor manufacturing. Lam Research went public in 1984 and has since become a global leader in semiconductor capital equipment. In recent years, Lam has served as chairman of the David Lam Group, which invests and advises emerging technology companies. Lam serves as chairman of the board of private companies, including Multibeam, Microfabrica, and Qcept. In addition to his corporate experience, Lam was appointed by former President George Bush to serve on the U.S. Commission on Minority Business Development and by California Chief Justice Malcolm Lucas to serve on the Commission on the Future of the Courts. He was an advisor to President Bob Caret of the California State University at San Jose and served on the Visiting Committee of MIT. Lam graduated from the University of Toronto with a bachelor's degree in engineering physics, and holds Master's and doctoral degrees in chemical engineering from MIT. He worked for Texas Instruments, Xerox, and Hewlett-Packard, before founding Lam Research. -------------- next part -------------- An HTML attachment was scrubbed... URL: From sbank at stanford.edu Mon Oct 31 07:27:29 2005 From: sbank at stanford.edu (Seth Bank) Date: Mon, 31 Oct 2005 07:27:29 -0800 Subject: Reminder: University Oral Examination - Seth Bank (November 1, 2005 1:30PM) Message-ID: <5.2.1.1.2.20051031072542.03a006a0@sbank.pobox.stanford.edu> >Special University Oral Examination >Seth R. Bank >Department of Electrical Engineering >Stanford University > >Tuesday, November 1, 2005 >1:30 PM (Refreshments served at 1:15 PM) >Center for Integrated Systems Extension (CISX) Auditorium (Rm. 101X) > > >"High-Performance 1.55-um GaAs-Based Lasers" > >Next-generation local and metro-area optical networks require >high-performance lasers, detectors, and modulators operating at ~1.55 um. >In contrast to long-haul networks, components must be very inexpensive, >power efficient, and producible in high volumes - all with little >sacrifice to performance. Two classes of lasers are required. The first is >low-power (~1-10 mW) 1.55 um communication sources, such as >vertical-cavity surface-emitting lasers (VCSELs), that must be insensitive >to ambient temperature and operable at high modulation rates. The second >class is higher output power (>300 mW) lasers emitting at shorter >wavelengths (~1.48 um) for pumping Raman and doped fiber amplifiers. > >This seminar describes the development of a novel GaAs-based gain >material, GaInNAs(Sb), that is ideal for both applications. Material >growth is challenging, but optical quality can be improved dramatically >through the introduction of antimony and other growth enhancements that >will be discussed. We demonstrate the first low-threshold GaAs-based >lasers from 1.45-1.55 um. Laser threshold current densities are as low as >440 A/cm^2 -- comparable, if not superior, to commercially available >InP-based devices. High continuous-wave output powers >400 mW, more than >sufficient for amplifier applications, are achieved from even simple >single quantum well structures. Laser results at 1.55 um validate this new >materials system for use in VCSEL sources as well. Studies of the >temperature stability of these devices will also be presented. > >---------------------------------------------------------------------------- >Seth Bank sbank at stanford.edu >Doctoral Candidate Ph: 650-725-8313 >James S. Harris Group Fax: 650-723-4659 >Electrical Engineering >Stanford University > >CIS-X Rm. 126X >Via Ortega >Stanford, CA 94305-4075 -------------- next part -------------- A non-text attachment was scrubbed... Name: Bank-Orals_Abstract.pdf Type: application/pdf Size: 70588 bytes Desc: not available URL: From mtang at snf.stanford.edu Mon Oct 31 10:21:58 2005 From: mtang at snf.stanford.edu (Mary Tang) Date: Mon, 31 Oct 2005 10:21:58 -0800 Subject: Bunnysuit cleanup! Message-ID: <436660C6.2080606@snf.stanford.edu> Hi everyone -- Just a reminder: the color for November is neon yellow... Hangers & suits without this visible tag will be removed from the gowning room tomorrow. Tags are available at the gowning room entrance. Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From saraswat at cis.stanford.edu Mon Oct 31 15:59:59 2005 From: saraswat at cis.stanford.edu (Krishna Saraswat) Date: Mon, 31 Oct 2005 15:59:59 -0800 Subject: Reminder: PhD Orals Abstract for Tejas Krishnamohan Message-ID: <6F76C8B6-1CE1-46EE-A208-B31CBEEC5978@cis.stanford.edu> Physics and Technology of High Performance, Strained Germanium Channel, Heterostructure MOSFETs by Tejas Krishnamohan Thesis Advisor: Prof. Krishna Saraswat Co-advisors: Prof. Yoshio Nishi and Prof. Jim Plummer Date: Tuesday, November 1st 2005, Time: 10am (Refreshments served at 9:45am), Location: CIS-X Auditorium, Center For Integrated Systems, Stanford University, CA 94305 ABSTRACT Since the invention of the transistor in 1947, the rapid progress in silicon-based information processing technology is unprecedented. However, the road to scaling devices in accordance with Moore's Law to sub-15nm dimension seems obscure and challenging. Sustaining the required device performance at lower power dissipation seems to be hitting 'fundamental' physical limits. The quickening pace of MOSFET scaling is accelerating the introduction of novel structures and high-mobility materials into the channel. High mobility materials like germanium (Ge), strained-SixGe(1-x) and strained-Si are very promising as future channel materials. However, due to their smaller bandgap and higher dielectric constant, most high mobility materials suffer from large Band-To-Band Tunneling (BTBT) leakage currents and worse short channel effects, which may ultimately limit their scalability. We present novel, heterostructure MOSFETs, which can significantly reduce the BTBT leakage currents while retaining their high channel mobility, making them suitable for scaling into the sub-15nm regime. Through Full band Monte-Carlo, Poisson-Schrodinger and detailed BTBT simulations, we analyze the tradeoffs between carrier transport, quantum mechanical effects, electrostatic integrity and BTBT leakage in high mobility, Si/strained-SiGe/Si, heterostructure, PMOS DGFETs. Our results show a dramatic (>100X) reduction in BTBT and excellent electrostatic control of the channel, while maintaining very high drive currents in these highly scaled heterostructure DGFETs. Detailed experiments were performed to analyze and verify the tradeoffs between higher mobility (smaller bandgap) channels and lower Band-To-Band-Tunneling (BTBT) leakage in heterostructure MOSFETs. Strained-SiGe MOSFETs with varying Ge percentage, Ge thickness and Si cap thickness were fabricated on bulk Si and SOI substrates. The ultra-thin (~2nm) strained-Ge channel heterostructure MOSFETs show >4X mobility enhancements over bulk Si devices and >10X BTBT reduction over surface channel strained SiGe devices. Using the Landauer-Buttiker formalism for ballistic currents and BTBT modeling (taking into acount quantum-mechanical effects, different valleys, subbands and band structure) we discuss the important considerations in choosing future channel materials (e.g. strained-Si, Ge, III-V, CNTs) and structures for high- performance/low-leakage MOS devices.