Plasma Etch User Mtg March 9, 2006

Jim McVittie mcvittie at cis.Stanford.EDU
Fri Mar 3 16:41:13 PST 2006


Hi,

The Bay Area plasma etch user gp (PEUG) has bi-monthly mtgs in Sunnyvale. 
They are open to anyone, who wants to attend. The March mtg to be held on 
the afternoon of March 9 is especially good. If you are interested in 
plasma etching, it is a good mtg to attend.

	Jim McVittie (PEUG Chairman) 
>
> *NCCAVS PEUG User Groups
> MARCH Meeting Announcement***
>
>  
>
> */NO NEED TO REGISTER -- JUST SHOW UP!!/***
>
>  
>
> *Session Topic:  *Engineering Plasmas and Processing Equipment for
> Applications
>
>  
>
> *Chair:*   Dan Flamm, dlf at mtag.com <mailto:dlf at mtag.com> and
>             Brett Cruden, NASA Ames UARC, bcruden at arc.nasa.gov
> <mailto:bcruden at arc.nasa.gov>
>
>  
>
> *Date:  March 9, 2006*
>
>  
>
> *Time:*   2:00-5:00pm
>
> *Location:  *National Semiconductor
>
>                  955 Kifer Rd.
>
>                  Sunnyvale, CA
>
>                 
>
> *DIRECTIONS:_
>
> _From 101*: Go south on Lawrence Expressway. Turn right on Kifer Rd.
> Turn right into the driveway of the National Semiconductor Auditorium
> (955 Kifer Rd.) and find parking in the rear parking lot. The
> auditorium is on the West Side of the building and can be entered from
> the door in the rear next to the company park.
>
> *From 280*: Go north on Lawrence Expressway. Turn left on Kifer Rd.
> Follow directions above.
>
>  
>
> *_AGENDA:_*
>
>  
>
> 2:00 - 2:20 pm Refreshments
>
> 2:20-  2:30 pm PEUG Business Meeting
>
> 2:30 - 5:00 pm Presentations
>
>  
>
> 1. *Plasma Challenges for 45/32 nm scaling - Dry Etch Tooling and
> Processes,
> *Richard Wise, Semiconductor Research and Development Center, IBM
> Microelectronics, Hopewell Junction, NY
>
>  
>
> The anticipated impact of a variety of advanced technologies on
> requirements of dry etch process and tooling is discussed in detail.
> The impact of metal gate electrodes, high-k gate dielectric materials,
> hybrid oriented transistors (HOT), FINFET transistors, new silicide
> materials, multiple stressed (tensile/compressive) liners,
> fully-silicided gates, embedded Si-Ge (compressive/tensile), and
> porous low-k BEOL materials are considered as candidates for
> introduction at the 45 and 32 nm nodes. Lithographic exposure
> continues to require dry etch processes   Additional masking materials
> may become necessary as requirements compromise overall etch
> selectivity.  Expected reduction in available resist material due to
> limitations of the lithographic process window (N.A , DOF, resolution)
> places increased demand on the dry etch processing chamber. These
> reductions in the available mask thickness have driven the
> implementation of more highly selective etch processes, with
> concurrent tradeoffs in uniformity, defectivity, profile control, line
> edge roughness and line edge foreshortening of the transferred
> pattern. Dry etch process and tooling needs required to address these
> lithographic challenges are discussed.
>
>
> 2. *Kinetics of Downstream Oxide and Silicon Nitride Cleaning Using
> Fluorocarbon Gas Mixtures in a Remote Toroidal Discharge, *Herb Sawin,
> Massachusetts Institute of Technology, Dept. of Chemical Engineering,
> Cambridge, MA**
>
> * *
>
> The use of downstream cleaning of deposition chambers has become
> common.  Use of NF3 feed gases has dominated because of the high
> etching rates and lack of residual deposition.  While fluorocarbons
> are less expensive per mole of fluorine in the feed, the etching rates
> have been less than that for complete conversion of the fluorocarbon
> to atomic fluorine.  In addition, deposits have been observed,
> particularly on low temperature surfaces. We have demonstrated that
> nearly complete dissociation of fluorocarbon gases to form atomic
> fluorine can be achieved using mixtures of C2F6, O2 and N2.  This is a
> result of nitrogen blocking surface sites that favor the formation of
> COF2 rather than CO2.  With the nitrogen blocking nearly complete
> conversion of the fluorocarbon to atomic fluorine and comparable
> etching rates of oxide can be achieved. We have also developed
> mixtures for etching silicon nitride much faster than in pure NF3
> discharges.  They are particularly fast at room temperature which
> suggests that pump exhaust lines can be cleaned as well as the chamber.*
> *
> 3*. The Spontaneous Etching of Silicon with Halogen Atoms,
> *Harold F. Winters, San Jose, CA.
>
> A recently proposed molecular dynamics simulation of spontaneous
> etching of undoped silicon with F has been successful in describing a
> variety of experimental observations. Insights gained have been used
> to refine a model which explains other spontaneous etch observations,
> including etching by halogen atoms and various effects of doping on
> spontaneous etching, among others. The model is based on the
> assumption that the reaction occurs at negative ion centers on the
> silicon surface (e.g. at SiF_3 ^- sites)^ using the umbrella-type
> reaction mechanism observed in the simulation. Experimental data show
> that the layer thickness is relatively independent of incident flux
> and temperature over significant ranges of these parameters.  These
> results are correlated with various experiments including reaction
> probability measurements over the temperature range 200--1000 K and
> doping experiments with concentrations from ~10^15 to 10^20
> dopants/cm^3 . It will be shown that one mechanism can be used to
> describe the experimental results for the spontaneous etching of S
> (111) by both F, Cl, and Br.
>
>  
>
> A variety of data will be presented and compared with theory.
>
>  
>
> **********************************************************
>
> *_Future Meetings:_*
>
> *May 11---Damascene Etching*, submit abstracts to Co-Chairs:
> Calvin Gabriel, AMD, calvin.gabriel at amd.com
> <mailto:calvin.gabriel at amd.com>; Xueyu Qian, AMEC,
> XueyuQian at amecnsh.com <mailto:XueyuQian at amecnsh.com>
>
>  
>
> *July 13---Frontend Dielectric Etch*, submit abstracts to: Shawming
> Ma, Applied Materials, shawming_ma at amat.com <mailto:shawming_ma at amat.com>
>
>  
>
> **********************************************************
>
> *NCCAVS User Group website: www.avsusergroups.org
> <http://www.avsusergroups.org/>
> Find:* Meeting Schedules, Announcements, Call for Papers, Committee
> Contact Information, Proceedings from monthly meetings and more.
>
> * *
>
> *Sign up for a User Group: **www.avsusergroups.org*
> <http://www.avsusergroups.org/>
>
> ***********************************************************
>
>  
>





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