From pnataraj at kovio.com Mon Apr 2 16:30:57 2007 From: pnataraj at kovio.com (Pradeep K. Nataraj) Date: Mon, 2 Apr 2007 16:30:57 -0700 Subject: Silver Etching quesions? Message-ID: <17AB8DED04002F4E803EE9A3E29ECFA86633AD@koviomail.print-this.com> Dear lab members, Has any one have experience in Wet etching Silver? Can you please let me know the Etchant and undercut(appx) I am currently using Cr-etchant, have very bad under cut and sometimes just lifts off the Silver. Any answers will be appreciated. Thank your for your time. Pnataraj. -------------- next part -------------- An HTML attachment was scrubbed... URL: From candacec at stanford.edu Mon Apr 2 18:04:57 2007 From: candacec at stanford.edu (Candace Kay Chan) Date: Mon, 02 Apr 2007 18:04:57 -0700 Subject: Au etchant Message-ID: <4611A839.7040402@stanford.edu> Hi all, I was wondering if anyone has any Au etchant that contains KI/iodine (Transene sells this). I need an etchant that will remove Au but not Si and stainless steel. Thanks, Candace Chan -- Candace K. Chan Ph.D. Student, Department of Chemistry Stanford University McCullough Building Room 209 476 Lomita Mall Stanford, CA 94305 -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Tue Apr 3 08:46:11 2007 From: mtang at stanford.edu (Mary Tang) Date: Tue, 03 Apr 2007 08:46:11 -0700 Subject: Class announcement: EE317 Micro- and Nano-lithography Message-ID: <461276C3.7030808@stanford.edu> Hi everyone -- Since we will soon have a sub-micron optical lithography tool (ASML PAS 5500/60) worthy of respect, we'd like to direct your attention to a new lithography course being taught by the illustrious Prof. Fabian Pease and Jun Ye, Consulting Professor and CTO of Brion Technologies. The class will be held in Building 300-300 and the catalog description is below. *********************************** *EE317 Micro- and Nano-lithography* The fundamentals of generating submicron and nano-meter scale patterns at economical rates, and with high fidelity and low defect density. The material will cover first the traditional topics of the formation of submicron images with ultraviolet light and the resulting exposure and development of polymeric resists. Resolution enhancing techniques such as phase-shifting masks and other wavefront-engineering approaches, and double patterning techniques will also be covered. There will be extensive new material on computational lithography, including optical proximity correction, that is now enabling the patterning of well-controlled features measuring only one third of the wavelength of the ultra-violet light. Hands-on simulation of the lithographic process will be a prominent feature of the course. Nanoimprint lithography and related techniques will also be covered. Prerequisites: 141 or equivalent, 212 or equivalent, basic experience in computing. /3 units, Spr (Pease and Ye) alternate years not given 2007-8/. M,W,F 0900-0950; may be switched to M,W 0835-0950. Room TBA -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From rcrane at stanford.edu Tue Apr 3 09:36:39 2007 From: rcrane at stanford.edu (Dick Crane) Date: Tue, 03 Apr 2007 09:36:39 -0700 Subject: Retirement Message-ID: <46128297.8000309@stanford.edu> Labmembers and dwellers of CIS/CISX, It is with both happiness and sorrow that I would like to inform you of my decision to retire from Stanford on May 4 of this year. Happiness in that I will be able to pursue a number of personal projects and will have more time for family and hiking with my wife. Sorrow in leaving my good friends and co-workers behind as I move to a new location in coastal Oregon. I started at Stanford (SLAC) in September, 1967 and aside from two years at UCSC and ten years with my professor starting a company, have spent my entire professional career here within the university. Thank you for your part in helping to make this a truly great experience. Stay tuned for updates concerning new contacts for lab and building business and for a party date and time. Take care, Dick From mtang at stanford.edu Tue Apr 3 15:53:03 2007 From: mtang at stanford.edu (Mary Tang) Date: Tue, 03 Apr 2007 15:53:03 -0700 Subject: Announcing E341 - MEMS Fabrication Class Message-ID: <4612DACF.1000308@stanford.edu> Hi everyone -- Spring. It's that time of year again, when the days are longer, those caterpillars pop up everywhere -- and the MEMS fabrication class gets underway. Formerly known as ME342, this is a hands-on fabrication course where students learn first-hand how to run equipment to process cantilevers at SNF. There are a number of changes in the class this year (for one thing, it is now called "E341") which we all hope will make this class even better than in years past. (If you would like to learn more about the class, the fabrication process, and the special projects, check out the ME342 website from last year.) The class agenda is aggressive, and we all ask for your patience and understanding in supporting this effort, particularly with regard to equipment which is not normally reserved. The class schedule is indicated below and is also on the calendar outside the lab. If you have any questions, comments, or suggestions, please get in touch with me or the E341 TA, Rishi Kant (coral login: rik9.) Thanks for your attention! Mary ******************************************************************* Week 1 April 9th - 12th 8:30 am - 10:30 am wbdiff 9:00 am - 11:30 am wbsilicide 10:30 am - 3:30 pm tylan Oxidation tube Week 2 April 16th - 19th 8:15 am - 9:15 am svgcoat 9:15 am - 10:30 am karlsuss 9:30 am - 10:30 am svgdev 11:15 am - 12:30 pm wbnonmetal Week 3 April 23rd - 26th 8:15 am - 9:15 am svgcoat 9:15 am - 11:00 am karlsuss 9:00 am - 11:00 am svgdev 11:15 am - 12:30 pm wbmetal Week 4 April 30th - May 3rd 8:15 am - 11:30 am stsetch 11:30 am - 12:30 pm wbmetal 9:15 am - 9:30 am gasonics Week 5 May 7th - 10th 8:00 - 11:30 am stsetch 11:30 - 12:30 pm wbmetal Week 3 & 4 Friday - Sunday will have heavy litho usage for HW assignments -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From fengj at stanford.edu Wed Apr 4 17:16:45 2007 From: fengj at stanford.edu (Jia Feng) Date: Wed, 4 Apr 2007 17:16:45 -0700 Subject: Seminar on Germanium Condensation Message-ID: <006601c77717$b51e1830$22b60c80@FENG> SGOI and GeOI by Germanium Condensation Benjamin Vincent CEA/LETI, Grenoble, France Date: Wednesday, April 11, 2007 Time: 3:00 pm Place: CIS-X338 Germanium is today considered as one of the most adapted semiconductor substitutes of Silicon for ultimate device scaling having an identical crystalline structure and higher carrier's mobilities. For MOSFETs fabrication, Ge needs nevertheless to be used On Insulator (GeOI); the important OFF state current density is then reduced this way and such structures permit to take profit of "On Insulator" technology advantages. Performances of GeOI substrates have already been demonstrated for pMOSFETs; its use for nMOSFETs is still under discussion. Different techniques permit the fabrication of GeOI substrates as SMARTCUT, SIMOX, RMG or Ge condensation processes. The latter one is considered as the easiest fabrication method and can provide localized GeOI structures, as does the RMG technique. Localized GeOI structures fabrication permit indeed a SOI/GeOI co-integration for advanced CMOS applications (nMOSFET on SOI and pMOSFET on GeOI). The Ge condensation technique is deeply studied at CEA/LETI, Grenoble, France. The presentation will focus on different aspects of the research work performed on this technique: - Details on the fabrication procedure of full sheet SGOI/GeOI wafers. - Ge condensation simulations: by TCAD and by an analytical model. - Study of the defects generation occurring during the Ge condensation. - Electrical characterizations of the SGOI substrates obtained by Ge condensation: carriers' mobilities extraction. -------------- next part -------------- An HTML attachment was scrubbed... URL: From tberg at stanford.edu Mon Apr 9 09:57:32 2007 From: tberg at stanford.edu (Ted Berg) Date: Mon, 09 Apr 2007 09:57:32 -0700 Subject: Varian Implanter removal Message-ID: <461A707C.9090409@stanford.edu> Hello All, It is with a tear in my eye that I announce the Varian350D Implanter will be leaving us next week. This will cause a minor disruptionin the aisle near the RTPs and the ASM epi. Thank you in advance for your cooperation. ted From nishiy at stanford.edu Tue Apr 10 13:24:47 2007 From: nishiy at stanford.edu (Yoshio Nishi) Date: Tue, 10 Apr 2007 13:24:47 -0700 Subject: Request for SNF user high light slide Message-ID: <200704102024.l3AKOrC0011186@smtp-roam.Stanford.EDU> Dear SNF users, We will have a visit by Dr. Larry Goldberg, NSF, in charge of NNIN program on April 25th to SNF. Since it is so important for us to successfully go through the NNIN renewal process for another 5 years starting from 2009 at $2.4M per year, now is the time to start preparing for the competition. In this context, I would like to ask for your collaboration in providing us one high light slide from each of you by April 20th. Please send them to Paul Rissman and Mary Tang. I am attaching a few examples for your convenience. Thank you for your collaboration. Yoshio Nishi -------------- next part -------------- A non-text attachment was scrubbed... Name: NNIN user high light slide.ppt Type: application/octet-stream Size: 763392 bytes Desc: not available URL: From kimsangb at stanford.edu Tue Apr 10 14:15:30 2007 From: kimsangb at stanford.edu (SangBum Kim) Date: Tue, 10 Apr 2007 14:15:30 -0700 Subject: probe card vendors? Message-ID: <000901c77bb5$5ea90260$0301a8c0@sangbumhome> Dear Lab members, We are designing a mask for an array of devices that we would like to test in an array form using probe cards. We want to make sure that the positions and sizes of our 64 pads are within the spec that the probe card vendors can accommodate. Could you recommend some probe card vendors or manufacturers that I can check with? If you have used their service, I appreciate if you can also comment on their price ranges. Thanks as always, SangBum -------------- next part -------------- An HTML attachment was scrubbed... URL: From fengj at stanford.edu Wed Apr 11 13:42:35 2007 From: fengj at stanford.edu (Jia Feng) Date: Wed, 11 Apr 2007 13:42:35 -0700 Subject: Reminder: Seminar on Germanium Condensation, Today, 3:00 pm, CISX-338 Message-ID: <1176324155.461d483b7cf87@webmail.stanford.edu> All are welcome. Jia From ndhuang at stanford.edu Wed Apr 11 13:53:41 2007 From: ndhuang at stanford.edu (ndhuang) Date: Wed, 11 Apr 2007 13:53:41 -0700 Subject: Mask missing References: <000a01c75c53$9fa218f0$916540ab@czech1> Message-ID: <003f01c77c7b$7cbcd440$a7204f86@win.slac.stanford.edu> Dear lab member, We lost one mask probably in the yellow roon in the end of March. It's a typical 4 inch glass mask stored in a plastic mask box. The name of the mask is something close to 'water4 frontside' and the signature on the box cover is Dennis Norlund. If you have any clue about where it is, please let me know. You can help us save several hundred bulks and save time as well. Many thanks. Ningdong ----- Original Message ----- From: Paul Jerabek To: labmembers at snf.stanford.edu Sent: Thursday, March 01, 2007 3:47 PM Subject: system up To whom it may concern: Micronis laser writer is back up for production. -Paul -------------- next part -------------- An HTML attachment was scrubbed... URL: From kevhuang at stanford.edu Thu Apr 12 12:30:21 2007 From: kevhuang at stanford.edu (Kevin Huang) Date: Thu, 12 Apr 2007 12:30:21 -0700 Subject: processing wafer with gold and cr Message-ID: <93586f8c0704121230m2edf2731t7dcd75b8030b714c@mail.gmail.com> Hi, Could anyone please help answering some general questions about processing wafers with gold and cr: 1) will the standard photo-lithography steps be compatible with gold? (i.e. are the resist solvent and developer solution compatible with gold?) 2) what is a common gold and cr etchant used and what is the etch rate roughly? Thanks. Kevin -------------- next part -------------- An HTML attachment was scrubbed... URL: From sjo at stanford.edu Sat Apr 14 16:14:05 2007 From: sjo at stanford.edu (Sebastian J. Osterfeld) Date: Sat, 14 Apr 2007 16:14:05 -0700 Subject: How to expose 15 microns of SPR220-7 correctly? Message-ID: <4621603D.3060806@stanford.edu> Dear Labmembers, In an effort to eliminate the use of PDMS in my process, I am now trying to pattern a 15 micron thick film of SPR220-7. My critical dimension is ca. 10 microns. Spin coating should be a single coat at 1000 rpm, however, the track recipe does a poor job at this, with wrinkles, creases, and bubbles. I am hoping that doing this manually will give fewer wrinkles on the film. Soft baking should be 200 to 300 seconds on the 110 degree hotplate (svgcoater), I believe. I also know that the 3+ hour rest time is important, especially for thicker SPR220, to allow atmospheric water to diffuse back into the resist, which is required to complete the photoreaction. Without the rest time, the film will appear underexposed. At the SNF, the custom seems to be to place this rest time after soft baking, but before exposure. A flyer that I found on SPR220-7 (see here: http://www.nanotech.ucsb.edu/NanotechNew/processing/Lithography/Materials/SPR-220-Data%20Sheet.pdf) says to place this rest time after exposure, and before the post-exposure bake. I think either is probably o.k. However, I am not sure about what exposure is right. I am hoping that someone can give me some starting points so that I can save time on this. Most importantly, it appears that thicker SPR220-7 is best exposed with i-Line UV, not the g-Line UV that EVAligner has. So my question is, has anyone had success with exposing 15 micron SPR220-7 on EVAligner anyway? What's the right exposure time? And how much is it worth it to wait till Thursdays when KarlSuss is usually switched to i-Line UV? With best regards, Sebastian -- Sebastian J. Osterfeld Ph.D. Candidate MagArray Project, Shan X. Wang Group 334 Olmsted Rd #114 Stanford University Stanford, CA 94305 Phone: 650-906-1946 Fax: 650-736-1984 Email: Osterfeld at stanford.edu From tberg at stanford.edu Mon Apr 16 07:15:43 2007 From: tberg at stanford.edu (Ted Berg) Date: Mon, 16 Apr 2007 07:15:43 -0700 Subject: Implanter move out-TEL move in Message-ID: <4623850F.30105@stanford.edu> Hello All, Just a reminder that the Varian Implanter Move out will begin today and will slightly disrupt the aisle between the ASM Epi and the 4100s. sorry for any inconvenience. THe other point is that the new TEL Spa tool will be moving in Next Tuesday and will also cause some disruption.Allin the name of progress. Thanks in advance for your help. ted From sjo at stanford.edu Mon Apr 16 10:14:23 2007 From: sjo at stanford.edu (Sebastian J. Osterfeld) Date: Mon, 16 Apr 2007 10:14:23 -0700 Subject: How to expose 15 microns of SPR220-7 correctly? In-Reply-To: <4621603D.3060806@stanford.edu> References: <4621603D.3060806@stanford.edu> Message-ID: <4623AEEF.80806@stanford.edu> Hi All, After some experimentation, it turns out that it is the development that is unusual on SPR220-7 (15 microns), not the exposure. I used 1 coat of SPR220-7, exposed at 30 seconds. It develops fine, but due to the lack of agitation, it takes a *very* long time on the track - up to 20 minutes (4x the entire 7 micron develop program). This was the step that was difficult to figure out, since from 3612 (any thickness) my experience was that anything which doesn't develop within three minutes will not develop at all and is a sign of underexposure. Final thickness after hard bake was something like 12 microns. Sebastian Sebastian J. Osterfeld wrote: > Dear Labmembers, > > In an effort to eliminate the use of PDMS in my process, I am now > trying to pattern a 15 micron thick film of SPR220-7. My critical > dimension is ca. 10 microns. > > Spin coating should be a single coat at 1000 rpm, however, the track > recipe does a poor job at this, with wrinkles, creases, and bubbles. I > am hoping that doing this manually will give fewer wrinkles on the film. > > Soft baking should be 200 to 300 seconds on the 110 degree hotplate > (svgcoater), I believe. > > I also know that the 3+ hour rest time is important, especially for > thicker SPR220, to allow atmospheric water to diffuse back into the > resist, which is required to complete the photoreaction. Without the > rest time, the film will appear underexposed. At the SNF, the custom > seems to be to place this rest time after soft baking, but before > exposure. A flyer that I found on SPR220-7 (see here: > http://www.nanotech.ucsb.edu/NanotechNew/processing/Lithography/Materials/SPR-220-Data%20Sheet.pdf) > says to place this rest time after exposure, and before the > post-exposure bake. I think either is probably o.k. > > However, I am not sure about what exposure is right. I am hoping that > someone can give me some starting points so that I can save time on > this. Most importantly, it appears that thicker SPR220-7 is best > exposed with i-Line UV, not the g-Line UV that EVAligner has. So my > question is, has anyone had success with exposing 15 micron SPR220-7 > on EVAligner anyway? What's the right exposure time? And how much is > it worth it to wait till Thursdays when KarlSuss is usually switched > to i-Line UV? > > With best regards, > Sebastian > -- Sebastian J. Osterfeld Ph.D. Candidate MagArray Project, Shan X. Wang Group 334 Olmsted Rd #114 Stanford University Stanford, CA 94305 Phone: 650-906-1946 Fax: 650-736-1984 Email: Osterfeld at stanford.edu From beinnmuir at stanford.edu Mon Apr 16 11:57:58 2007 From: beinnmuir at stanford.edu (Beinn Muir) Date: Mon, 16 Apr 2007 11:57:58 -0700 Subject: Sapphire wafers In-Reply-To: <93586f8c0704121230m2edf2731t7dcd75b8030b714c@mail.gmail.com> References: <93586f8c0704121230m2edf2731t7dcd75b8030b714c@mail.gmail.com> Message-ID: <20070416115758.j62kv08b0va8c4c8@webmail.stanford.edu> Dear Labmembers, I want to do some experiments with sapphire wafers and I would be interested in talking to someone experienced in their use. In particular I have some basic questions regarding cutting or cleaving wafers, any common cleaning methods and surface treatments. Thanks, Beinn... ----------------------------------- Dr Beinn Muir Department of Chemical Engineering Stauffer III, Rm113 Stanford University Stanford, CA 94305, USA ----------------------------------- From cm_richter at att.net Mon Apr 16 13:42:35 2007 From: cm_richter at att.net (Claudia Richter) Date: Mon, 16 Apr 2007 20:42:35 +0000 Subject: Process Carriers for 8" Substrates Message-ID: <041620072042.18151.4623DFBB00066BF2000046E721602810609D0A9B080C079DA1030C@att.net> Dear labmemembers, I'm looking for process carriers (PTFA or PFA) for 200mm substrates. Does anyone know of another vendor (other than Entegris who has a minimum order requirement) who carries them? or perhaps a labmember who may have extra carriers I can buy from? Best regards, Claudia From zhangy at stanford.edu Tue Apr 17 16:00:11 2007 From: zhangy at stanford.edu (Yuan Zhang) Date: Tue, 17 Apr 2007 16:00:11 -0700 Subject: ion implantation service Message-ID: <20070417225930.97AB14D63D@smtp1.stanford.edu> Dear labmemebers, We need to do Phosphor implantation in our device fabrication, and the dopant concentration should be above 1e18. I wonder if there's any good implantation vendor around. And I really appreciate for any advice you give. Thank you very much! Best, Yuan From shott at stanford.edu Wed Apr 18 09:34:45 2007 From: shott at stanford.edu (John Shott) Date: Wed, 18 Apr 2007 09:34:45 -0700 Subject: Did you lose some keys? Message-ID: <462648A5.4030505@stanford.edu> SNF Lab Members and CIS Residents: I found a set of keys outside the exit door that faces the Ginzton building early on Monday morning ... and then forgot to send out this message until now. Did you lose some keys recently? Describe them and they are yours .... John From rissman at stanford.edu Thu Apr 19 15:02:00 2007 From: rissman at stanford.edu (Paul Rissman) Date: Thu, 19 Apr 2007 15:02:00 -0700 Subject: evacuation this afternoon Message-ID: <200704192202.l3JM27lO019859@smtp-roam.Stanford.EDU> The evacuation of the lab was caused by spillage of what we believe is a few drops of BBr3 from a bubbler behind the diffusion furnace. This caused a spike in the level of the material which was contained within the furnace cabinet. The level has since returned to below detectable limits, but we would like to continue to watch the sensor for another 30 minutes. We anticipate reopening the lab at 3:30 pm. We are sorry for the inconvenience. If anyone has wafers at risk that they need to retrieve from a wet batch, please let us know so an SNF staff member can help you. Paul Rissman John Shott From rissman at stanford.edu Thu Apr 19 15:41:23 2007 From: rissman at stanford.edu (Paul Rissman) Date: Thu, 19 Apr 2007 15:41:23 -0700 Subject: lab is now open Message-ID: <200704192241.l3JMfUfF028280@smtp-roam.Stanford.EDU> We have confirmed that the BBr3 level is still below detectable levels. The lab is now open for operation. >The evacuation of the lab was caused by spillage of what we believe >is a few drops of BBr3 from a bubbler behind the diffusion >furnace. This caused a spike in the level of the material which was >contained within the furnace cabinet. The level has since returned >to below detectable limits, but we would like to continue to watch >the sensor for another 30 minutes. We anticipate reopening the lab at 3:30 pm. > >We are sorry for the inconvenience. If anyone has wafers at risk >that they need to retrieve from a wet batch, please let us know so >an SNF staff member can help you. > >Paul Rissman >John Shott From liwen.chang at stanford.edu Sat Apr 21 02:11:28 2007 From: liwen.chang at stanford.edu (Li-Wen Chang) Date: Sat, 21 Apr 2007 02:11:28 -0700 Subject: Collimator vendors Message-ID: <8ab79e460704210211r547abc4u20768b60456df4bb@mail.gmail.com> Dear labmembers, Does anyone know of vendors for custmized collimators? I've contacted Innovent (http://www.innovent.com) for a quote and been waiting for over a week. I really appreciate for any advice you may have. Thank you, Li-Wen From dasgupta at stanford.edu Tue Apr 24 10:53:08 2007 From: dasgupta at stanford.edu (dasgupta at stanford.edu) Date: Tue, 24 Apr 2007 10:53:08 -0700 Subject: centering first mask on wafer center Message-ID: <20070424105308.od0l7gud7w2s0osk@webmail.stanford.edu> Hi all, Does anybody know a good way to align my first mask layer and wafer, so that the center of my mask is well aligned with the center of the wafer? In other words, I have a circle with its center at the (0,0) point in the middle of my mask, and I need that circle to be concentric with the middle of my wafer, with tolerance of about 500 micron or less? I thought of aligning to the flat, which will give me the correct angle (angle is actually not critical since I have circles) but can not guarantee the correct lateral positioning along the direction of the flat. Thanks, Neil Dasgupta From ben.jian at arrayedfiberoptics.com Tue Apr 24 11:43:30 2007 From: ben.jian at arrayedfiberoptics.com (=?iso-8859-1?Q?ben.jian?=) Date: Tue, 24 Apr 2007 18:43:30 +0000 Subject: centering first mask on wafer center Message-ID: <20070424184331.11235.qmail@server266.com> Hi there, I have done exactly what you want to do. Here is how I did it. You need to design a hole at the center of your mask, which you have done. Next, you need to make a "ruler" wafer which has an obvious feature at the center of the wafer. When you do first level alignment, say on Karl Suss aligner, you first put in this ruler wafer and align your mask hole to the feature at the center of the ruler wafer. Then you can put in other wafers and expose. This way, all wafers will be well centered with very small error. And it is easy to do. Hope this helps. Ben -------Original Message------- From: dasgupta at stanford.edu Subject: centering first mask on wafer center Sent: 24 Apr '07 17:53 Hi all, Does anybody know a good way to align my first mask layer and wafer, so that the center of my mask is well aligned with the center of the wafer? In other words, I have a circle with its center at the (0,0) point in the middle of my mask, and I need that circle to be concentric with the middle of my wafer, with tolerance of about 500 micron or less? I thought of aligning to the flat, which will give me the correct angle (angle is actually not critical since I have circles) but can not guarantee the correct lateral positioning along the direction of the flat. Thanks, Neil Dasgupta -------------- next part -------------- An HTML attachment was scrubbed... URL: From tberg at stanford.edu Tue Apr 24 11:57:07 2007 From: tberg at stanford.edu (Ted Berg) Date: Tue, 24 Apr 2007 11:57:07 -0700 Subject: Core drilling tomorrow Message-ID: <462E5303.9050007@stanford.edu> Hello All , As some of you might have noticed the new TEL tool has moved into position. Tomorrow morning we will be drilling holes in the floor for pump lines. I regret it will be somewhat messy and will probably affect users in the area. Thanks for your patience. ted From sjo at stanford.edu Tue Apr 24 19:47:19 2007 From: sjo at stanford.edu (Sebastian J. Osterfeld) Date: Tue, 24 Apr 2007 19:47:19 -0700 Subject: centering first mask on wafer center In-Reply-To: <20070424184331.11235.qmail@server266.com> References: <20070424184331.11235.qmail@server266.com> Message-ID: <462EC137.70601@stanford.edu> I do it differently. The quick answer is that you need to create a mask that somehow outlines the properly aligned wafer. Assuming you have a mask that is mostly clear, you can specify the write window of the mask to be exactly 100x100 mm (i.e. -50,000/-50,000 to 50,000/50,000 microns). You can then align the curved edges of the 100mm wafer to the edges of this rectangular window. This is most easily done on the Karl S?ss with the microscope up (just hit F1). On EVAligner, you unfortunately can't retract the microscope, but you still sort of see the proper initial alignment by glancing onto the mask. If you have a mostly dark mask, then I find it useful to create two or three clear openings at the edge of the mask that outline where the 100mm wafer edge should run along for the wafer to be centered. This way, you can align to the actual wafer and you don't need a ruler wafer. Best regards, Sebastian ben.jian wrote: > Hi there, > > I have done exactly what you want to do. Here is how I did it. > > You need to design a hole at the center of your mask, which you have > done. Next, you need to make a "ruler" wafer which has an obvious > feature at the center of the wafer. When you do first level > alignment, say on Karl Suss aligner, you first put in this ruler wafer > and align your mask hole to the feature at the center of the ruler > wafer. Then you can put in other wafers and expose. This way, all > wafers will be well centered with very small error. And it is easy to do. > > Hope this helps. > > Ben > > > > -------Original Message------- > From: dasgupta at stanford.edu > Subject: centering first mask on wafer center > Sent: 24 Apr '07 17:53 > > Hi all, > > Does anybody know a good way to align my first mask layer and wafer, > so that the center of my mask is well aligned with the center of the > wafer? In other words, I have a circle with its center at the (0,0) > point in the middle of my mask, and I need that circle to be > concentric with the middle of my wafer, with tolerance of about 500 > micron or less? I thought of aligning to the flat, which will give me > the correct angle (angle is actually not critical since I have > circles) but can not guarantee the correct lateral positioning along > the direction of the flat. > > Thanks, > Neil Dasgupta > -------------- next part -------------- An HTML attachment was scrubbed... URL: From rcrane at stanford.edu Wed Apr 25 07:06:52 2007 From: rcrane at stanford.edu (Dick Crane) Date: Wed, 25 Apr 2007 07:06:52 -0700 Subject: Loss of temp control Message-ID: <462F607C.6060202@stanford.edu> Labusers, The fab does not have air temperature control this morning. This loss affects mostly the litho area's temperature and humidity levels. Control should be back up by 0900. The campus stream plant lost operation of their main boiler this morning. Back-up boilers are being placed into operation. Sorry for the inconvenience, Dick From tberg at stanford.edu Wed Apr 25 09:04:26 2007 From: tberg at stanford.edu (Ted Berg) Date: Wed, 25 Apr 2007 09:04:26 -0700 Subject: Cores areb finished Message-ID: <462F7C0A.10303@stanford.edu> Hello All, Cores for the TEL are complted and should be no more disturbances for the holes. Thanks for your patience.ted From jlittle at ee.stanford.edu Wed Apr 25 11:11:59 2007 From: jlittle at ee.stanford.edu (Joe Little) Date: Wed, 25 Apr 2007 11:11:59 -0700 Subject: Fwd: Gates network outage Message-ID: <200704251812.l3PIC31H031581@smtp-roam.Stanford.EDU> Please be advised that on May 3rd and May 10 our upstream network feed will under go maintenance between 5-6am. This will impact all network traffic, both wired and wireless, during those hours. Begin forwarded message: >From: tom dienstbier >Date: April 25, 2007 11:06:00 AM PDT >To: gates at cs.stanford.edu >Cc: gnet , Peter Tam >Subject: Gates network outage > >FYI, > >Campus Networking group will perform routine router upgrade and >maintenance on May 3 from 5am-6am and again on May 10 from 5am-6am. >During this time network connections across Gates subnets will be >down along with network connections/communications out side of the >Gates building. > >This will not affect any of the VoIP phones. > >Let me know if you have any questions or if you have problems with >these time slots. > >thanks > >tom From kevhuang at stanford.edu Wed Apr 25 20:58:06 2007 From: kevhuang at stanford.edu (Kevin Huang) Date: Wed, 25 Apr 2007 20:58:06 -0700 Subject: pad etch Message-ID: <93586f8c0704252058t22415757he784e5c8849fe53@mail.gmail.com> Hi, Could anyone please clarify something for me about pad etch: 1) I was told that this is the oxide etchant that's not supposed to attack aluminum significantly; so, what's the chemical that etches SiO2 in the pad etch? 2) I was also told that pad etch contains small amounts of HF. So, the small amount of HF still attacks Al but at slow rate? 3) If I want to etch 200nm of thermal oxide with Al features, does it matter which oxide etchant I use? Because even if pad etch etches Al slower, I need to leave the wafer in the solution for a longer time because it also etches the oxide at a slower rate. 4) in terms of health hazard, is pad etch better than 49% HF or 50:1 HF? Thanks in advance for the help. Kevin -- ================================== Kevin Huang Ph.D. Candidate Stanford Organic Electronics Lab Dept. of Electrical Engineering Email: kevhuang at stanford.edu Phone: (650) 725-6924 ================================== -------------- next part -------------- An HTML attachment was scrubbed... URL: From kevhuang at stanford.edu Wed Apr 25 22:09:42 2007 From: kevhuang at stanford.edu (Kevin Huang) Date: Wed, 25 Apr 2007 22:09:42 -0700 Subject: pad etch Message-ID: <93586f8c0704252209o248fca2of1ab162013d502e@mail.gmail.com> Hi, Could anyone please clarify something for me about pad etch: 1) I was told that this is the oxide etchant that's not supposed to attack aluminum significantly; so, what's the chemical that etches SiO2 in the pad etch? 2) I was also told that pad etch contains small amounts of HF. So, the small amount of HF still attacks Al but at slow rate? 3) If I want to etch 200nm of thermal oxide with Al features, does it matter which oxide etchant I use? Because even if pad etch etches Al slower, I need to leave the wafer in the solution for a longer time because it also etches the oxide at a slower rate. 4) in terms of health hazard, is pad etch better than 49% HF or 50:1 HF? Thanks in advance for the help. Kevin -- ================================== Kevin Huang Ph.D. Candidate Stanford Organic Electronics Lab Dept. of Electrical Engineering Email: kevhuang at stanford.edu Phone: (650) 725-6924 ================================== -------------- next part -------------- An HTML attachment was scrubbed... URL: From jimkruger at yahoo.com Fri Apr 27 15:16:23 2007 From: jimkruger at yahoo.com (jim kruger) Date: Fri, 27 Apr 2007 15:16:23 -0700 (PDT) Subject: Lost a photomask? Message-ID: <818774.63003.qm@web38901.mail.mud.yahoo.com> There is a photomask in a box labeled Compugrahics LARGEGAPDEV exp. date 3.31.07 near the mask scrubber. jim __________________________________________________ Do You Yahoo!? Tired of spam? Yahoo! Mail has the best spam protection around http://mail.yahoo.com From shott at stanford.edu Sat Apr 28 12:17:02 2007 From: shott at stanford.edu (John Shott) Date: Sat, 28 Apr 2007 12:17:02 -0700 Subject: SNF Temporarily Closed: Saturday, 11 a.m. ... Message-ID: <46339DAE.7060704@stanford.edu> An HTML attachment was scrubbed... URL: From sjo at stanford.edu Sat Apr 28 12:28:58 2007 From: sjo at stanford.edu (Sebastian J. Osterfeld) Date: Sat, 28 Apr 2007 12:28:58 -0700 Subject: How about an SNF Wikipedia? In-Reply-To: <45B7FB73.1030702@stanford.edu> References: <45B7FB73.1030702@stanford.edu> Message-ID: <4633A07A.9040106@stanford.edu> Dear Labmembers, Today I got this email about people starting a "stanford wiki", e.g. what the best class is to take etc. I think a much better idea would be to start an SNF wiki. We start with the processes that we already have, e.g. "How to do bilayer lift-off", but leave it open for additions and editing by users. We all are constantly discovering so many useful tweaks that we only occasionally share through the SNF email list. A wiki could be much more efficient in this regard. For example I would add that when doing bi-layer lift-off witl LOL2000, liberally overexposing the resist is a good strategy to ensure that the resist develops quickly and uniformly, so that the undercut can be created more reliably and uniformly. Best regards, Sebastian -- Sebastian J. Osterfeld Ph.D. Candidate MagArray Project, Shan X. Wang Group 334 Olmsted Rd #114 Stanford University Stanford, CA 94305 Phone: 650-906-1946 Fax: 650-736-1984 Email: Osterfeld at stanford.edu From shott at stanford.edu Sat Apr 28 14:41:57 2007 From: shott at stanford.edu (John Shott) Date: Sat, 28 Apr 2007 14:41:57 -0700 Subject: Lab open .... Message-ID: <4633BFA5.7070506@stanford.edu> SNF Lab Members: The lab is now open and operational .... just about the time that I was fearful that we would have to shut down the lab for a longer period of time, Jim McVittie showed up and is pumping the Cl2 and BCl3 lines out. This will greatly reduced the likelihood of a problem. While we never smelled or detected any chlorine or boron trichloride in the breathing air, I was concerned that the internal detector was reading such a high level. In any event, with the exception of machines that use chlorine or boron trichloride (pquest, lampoly, and p5000etch, I believe) the lab is now open. If you had equipment enabled during this time, send me email and I will rectify that. Thank you for your continued suppord, John From dalyx at stanford.edu Mon Apr 30 14:33:01 2007 From: dalyx at stanford.edu (Dany-Sebastien Ly-Gagnon) Date: Mon, 30 Apr 2007 14:33:01 -0700 Subject: SOI wafers through SEH America Message-ID: <7f014b6b0704301433q3b6b0276ta6b18b66d3fbc373@mail.gmail.com> Does anybody have used SEH America to obtain SOI wafers in the past? If so, would you forward me the contact information of a sales representative? For some reasons, they are very difficult to get in touch with and we have exhausted their web resources... Thanks, Dany -------------- next part -------------- An HTML attachment was scrubbed... URL: From edmyers at stanford.edu Mon Apr 30 14:45:13 2007 From: edmyers at stanford.edu (Ed Myers) Date: Mon, 30 Apr 2007 14:45:13 -0700 Subject: Fwd: J.A. Woollam Co. Short Course Announcement Message-ID: <6.2.5.6.2.20070430144157.038685d0@stanford.edu> Here is a second chance for those of you who missed the class covering the analysis software for our JA Woollam, M2000 Spectral Ellipsometer which was held here at Stanford. More details can be found on the JA Woollam web site at http://www.jawoollam.com/short_course.html >Dear J.A. Woollam Co. Customers, > >We would like to invite you to our next Standard Short Course to be >held July 30th - August 2nd, 2007 at Cornell University in Ithaca, >NY. I have attached a course description and registration form. If >you are interested, please fill out the registration form completely >and fax back to me at +1(402)-477-8214 by June 29th, 2007. > >This course will focus on data analysis methods for spectroscopic >ellipsometry with a significant amount of "hands-on" computer time. >For this reason, participants should be familiar with WVASE32 >software. If you have any questions, please feel free to contact me. > >Sincerely, > >Veronica Inlow > > >Veronica Inlow >Marketing Coordinator >J. A. Woollam Co., Inc. >645 M Street, Suite 102 >Lincoln, NE 68508 >vinlow at jawoollam.com >Phone: (402)477-7501 x101 >Fax: (402)477-8513 -------------- next part -------------- A non-text attachment was scrubbed... Name: CornellShortCourseRegistrationform.pdf Type: application/pdf Size: 303156 bytes Desc: not available URL: From mmlee at stanford.edu Mon Apr 30 22:03:37 2007 From: mmlee at stanford.edu (Meredith M. Lee) Date: Mon, 30 Apr 2007 22:03:37 -0700 Subject: Stanford OSA Seminar Series: Olympus Confocal Laser-Scanning Microscope - Thursday 5/3/2007 2:30pm AP299 Message-ID: <9fa245520704302203h1a1b7563sc2370487ed7d1743@mail.gmail.com> The student OSA chapter is pleased to announce a demonstration given by Lee Bazella, Bay Area Territory Manager for Olympus Industrial Micro Imaging. Please see details below. -------------------------------------------------------------------------------------------------------------------- Demonstration of the Olympus confocal laser-scanning microscope Thursday May 3rd, 2:30PM Ginzton AP299 ** **** Bring samples that you would like to analyze **** The LEXT, Olympus' confocal laser-scanning microscope, offers high resolution and high magnification imaging with little or no sample preparation. It offers magnification up to 14,400X with 120 nm lateral resolution and 10 nm Z resolution using a 408 nm laser. The LEXT provides standard white light microscope observation including brightfield, darkfield and Nomarski DIC and laser observation in non-confocal, confocal and confocal DIC modes. It can perform distance, height and roughness measurements with an X repeatability of less than 0.02 microns and a Z repeatability of less than 0.05 + 0.001L microns. The LEXT is considered a bridge tool between white light microscopes and scanning electron microscopes. There is also an IR version of the LEXT that uses a 1320 nm laser to image through silicon and a few other materials. It offers a resolution of 700 nm. The LEXT IR has an XY repeatability of 0.05 microns or less and a Z repeatability of 0.1 microns or less. Here is a website link with more information about the LEXT: http://www.olympusmicroimaging.com/index.cfm/page/products.index.cfm/cid/1085/navid/206/parentid/182 The presentation will be followed by a demonstration of the laser-scanning microscope. You are welcome to bring samples that you would like to analyze. Presentation and demonstration by: Lee Bazella Territory Manager - San Jose, CA Micro-Imaging Division Olympus Industrial America Refreshments will be provided. --++**==--++**==--++**==--++**==--++**==--++**==--++**== studentosa mailing list studentosa at lists.stanford.edu https://mailman.stanford.edu/mailman/listinfo/studentosa -------------- next part -------------- An HTML attachment was scrubbed... URL: