From kathrynt at stanford.edu Thu Nov 1 12:04:58 2007 From: kathrynt at stanford.edu (Kathryn Todd) Date: Thu, 1 Nov 2007 12:04:58 -0700 Subject: graphite as an etch stop? Message-ID: <4070ecc80711011204v304d57c4pa51224ad03e9e234@mail.gmail.com> Dear Labmembers, Does anyone have information on the etch rates of oxide etchants such as HF or dry oxide etches on graphite? I'm looking for something with no activity whatsoever. Thanks! -Kathryn Todd From jerabek at snf.stanford.edu Fri Nov 2 09:55:17 2007 From: jerabek at snf.stanford.edu (Paul Jerabek) Date: Fri, 2 Nov 2007 08:55:17 -0800 Subject: mask writer up Message-ID: <000e01c81d71$327382c0$916540ab@czech1> To whom it may concern: Micronic mask writer is back on line. See Coral message for details. -Paul -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Mon Nov 5 13:42:43 2007 From: mtang at stanford.edu (Mary Tang) Date: Mon, 05 Nov 2007 13:42:43 -0800 Subject: Seminar on "Selective Self-Assembly" Wed. 3:45 (4-5), CISX-101 Message-ID: <472F8E53.6070602@stanford.edu> All, Carol Livermore of MIT's ME Dept. is giving a seminar on "Selective Self-Assembly for Micro and Nanoscale Systems" in CISX-101, 4-5 (refreshments at 3:45). See you there -- Roger -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at stanford.edu Mon Nov 5 13:50:27 2007 From: mtang at stanford.edu (Mary Tang) Date: Mon, 05 Nov 2007 13:50:27 -0800 Subject: Seminar on "Selective Self-Assembly" Wed. 3:45 (4-5), CISX-101 Message-ID: <472F9023.9010708@stanford.edu> Attachment here. -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- A non-text attachment was scrubbed... Name: Livermore.Seminar.Nov7.doc Type: application/msword Size: 29184 bytes Desc: not available URL: From mse.whu at stanford.edu Tue Nov 6 17:21:42 2007 From: mse.whu at stanford.edu (Wei Hu) Date: Tue, 06 Nov 2007 17:21:42 -0800 Subject: Ti RIE Message-ID: <6.2.5.6.2.20071106171551.04aa2d60@stanford.edu> Dear labmembers, I am thinking of using PMMA as mask to dry etch Ti. Does anybody have experience or know a chemistry that gives the best selectivity to minimize the lateral erosion? Thanks a lot. Best, Wei Wei Hu PhD candidate Materials Science & Engineering Stanford University Tel: (650)-723-4015 E-mail: mse.whu at stanford.edu From gsosa at stanford.edu Wed Nov 7 15:03:00 2007 From: gsosa at stanford.edu (Gary J Sosa) Date: Wed, 07 Nov 2007 15:03:00 -0800 Subject: SVG Coat #1 Scheduled work Message-ID: <20071107150300.ayyn2c2jsoc0ww0k@webmail.stanford.edu> Hello Labmembers... SVG Coater #1 will be unavailable on Thursday 11/8 from 10 AM to 2:00 PM to install a new photoresist pump for the SPR 955 0.7 Resist. Please check coral for updates as we may finish the work sooner. Sorry for the short notice. ...Gary From gsosa at stanford.edu Thu Nov 8 15:55:57 2007 From: gsosa at stanford.edu (Gary J Sosa) Date: Thu, 08 Nov 2007 15:55:57 -0800 Subject: SVG #1 I-line resist update Message-ID: <20071108155557.xbflplyjso4gs8g8@webmail.stanford.edu> Hi labmembers... The new resist pump for 955 0.7 is installed and ready to use. When using program #5, please us arm program #1 instead of arm progrm #9 for a more accurate resist application. Coatings look very good under green light. Checked thickness. It is slightly low but we will continue to monitor. See attachment for thickness data. ....Gary -------------- next part -------------- A non-text attachment was scrubbed... Name: SVG 1 955 0.7 Resist.xls Type: application/vnd.ms-excel Size: 14336 bytes Desc: not available URL: From yoshima at stanford.edu Sat Nov 10 13:33:09 2007 From: yoshima at stanford.edu (Yasuhiro Oshima) Date: Sat, 10 Nov 2007 13:33:09 -0800 Subject: liquid around plasma oxidation tool (TEL SPA) Message-ID: Hi, One of lab member sent me an e-mail and told there is a suspicious liquid in front of/underneath TEL SPA last mid night. It is probably coolant for this tool called GALDEN (fluorinated carbon) because of its higher viscosity. GALDEN has non-reactivity, high dielectric strength, low toxicity, non-flammability... So it is safe. Only hazard might be it make floor slippery. I put a yellow tape just in case. I will work with Ted to fix it. Yasuhiro -- Yasuhiro Oshima Visiting Scholar Prof. McIntyre Gr. Materials Science and Engineering Stanford University 650-725-3458 408-398-4753 (cell) -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Mon Nov 12 11:07:03 2007 From: mtang at stanford.edu (Mary Tang) Date: Mon, 12 Nov 2007 11:07:03 -0800 Subject: What to do while the YES Oven is down.... Message-ID: <4738A457.80905@stanford.edu> Hello all -- There's good news and bad. The good news is that Gary and Mario appear to have found the source(s) of the unreliable behavior of the YES oven. However, there is bad news too... We are sorry to report that repair may take some considerable time (a crack in the chamber seam may require complete disassembly and re-welding.) So, we offer the following alternatives for priming your samples: 1. If you have a 100 mm round, use the standard 30 minute singe bake at 150 C, followed by HMDS prime on the SVG coat track, preferably track #1. 2. If you have pieces or other substrate that cannot be track-primed, you may do the following... But BE CAREFUL! - Singe bake at 150 C for 30 minutes to drive off surface moisture. - Use a manual coater (headway2 or laurell) to apply your HMDS. DO NOT POUR HMDS. There is a labeled dropper bottle of HMDS at headway2 bench. ONE DROP should be sufficient for a piece. Spin your sample until dry. Keep the dropper bottle closed when not in use. - BE CAREFUL in your chemical handling! HMDS can be easily inhaled and absorbed through the skin. See the MSDS here: http://www.jtbaker.com/msds/englishhtml/h2066.htm - Consider this a temporary measure, until the YES oven can be repaired. Remember: SNF does NOT encourage manual handling of HMDS, but will allow it only in special cases. We apologize for the inconvenience and will ask for your patience as the YES undergoes needed repairs. Your SNF Staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From jameson at stanford.edu Mon Nov 12 11:33:07 2007 From: jameson at stanford.edu (John Ross Jameson) Date: Mon, 12 Nov 2007 11:33:07 -0800 (PST) Subject: Smoothest Al at SNF? Message-ID: <200711121933.lACJX7ia022973@elaine16.Stanford.EDU> Hi All, Does anyone know which tool and deposition conditions at SNF yield the smoothest Al films? I was told the gryphon is the best, but I haven't seeen hard evidence. I'm aiming for a thickness of ~1000A, but would compromise thickness for lower roughness. Thanks in advance, John From gsosa at stanford.edu Mon Nov 12 14:55:55 2007 From: gsosa at stanford.edu (Gary J Sosa) Date: Mon, 12 Nov 2007 14:55:55 -0800 Subject: ASM-L Scheduled Downtime Message-ID: <20071112145555.cwpd2sv5s0o80ooc@webmail.stanford.edu> Hello Labmembers.... This Email is to inform you that the ASM Stepper will go down on Monday, November 19th at 9:00 AM and will be down till at least Monday, November 26. The tool will be down to install an inline regulator to improve the control of the lens helium pressure. The lengthy downtime is required to do a thorogh lens purge, re-establish stable lens pressure and to do the baseline metrology setups. I will keep you informed if anything unusual comes up or if the work is completed earlier than expected. Thanks.. Gary From gsosa at stanford.edu Tue Nov 13 08:53:18 2007 From: gsosa at stanford.edu (Gary J Sosa) Date: Tue, 13 Nov 2007 08:53:18 -0800 Subject: ASM-L Scheduled Downtime Message-ID: <20071113085318.xz0d598s2sgc0s4w@webmail.stanford.edu> Greetings Labmemebers... By popular demand, the scheduled stepper downitme will be posponed to a later date. It will probably be late December, early January. The stepper will be up and available over the Thanksgiving holiday. .... Gary From ryw at stanford.edu Wed Nov 14 13:01:07 2007 From: ryw at stanford.edu (Yiwen Rong) Date: Wed, 14 Nov 2007 13:01:07 -0800 Subject: Nitric Acid concentration Message-ID: <002201c82701$79ed8940$7d6018ac@harrisaug068> Hi: Does anyone know the concentration of the Nitric acid used in SNF? Thanks Yiwen -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Wed Nov 14 17:27:11 2007 From: mtang at stanford.edu (Mary Tang) Date: Wed, 14 Nov 2007 17:27:11 -0800 Subject: Nitric Acid concentration In-Reply-To: <002201c82701$79ed8940$7d6018ac@harrisaug068> References: <002201c82701$79ed8940$7d6018ac@harrisaug068> Message-ID: <473BA06F.5090406@stanford.edu> J.T. Baker, CMOS grade Nitric Acid, 70% in water. Yiwen Rong wrote: > Hi: > Does anyone know the concentration of the Nitric acid used in SNF? > > Thanks > > Yiwen -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From sjo at stanford.edu Wed Nov 14 19:43:21 2007 From: sjo at stanford.edu (sjo at stanford.edu) Date: Wed, 14 Nov 2007 19:43:21 -0800 Subject: Tips for Iontech uniformity? In-Reply-To: <002201c82701$79ed8940$7d6018ac@harrisaug068> References: <002201c82701$79ed8940$7d6018ac@harrisaug068> Message-ID: <20071114194321.xsly1ncpkcgsg08g@webmail.stanford.edu> Hello, Does anyone have some good tips how the etch uniformity can be improved in Drytek 1? I am using the resist strip O2 plasma, 500 mTorr, 100 sccm O2, 83 Watts, and the etch rate at the center of my 4" wafer always seems vastly different different from the etch rate at the wafer edge. Any suggestions? Thanks! Sebastian From gsosa at stanford.edu Fri Nov 16 15:55:32 2007 From: gsosa at stanford.edu (Gary J Sosa) Date: Fri, 16 Nov 2007 15:55:32 -0800 Subject: YES oven is up! Message-ID: <20071116155532.rdllkb4vwc00ow44@webmail.stanford.edu> Hi All.... The replacement YES oven is up and ready to use. It may look a little different but the operation is still the same. The "Start" and "Reset" buttons are located in the center of the control panel. Please also read the note on the chamber door regarding the alarm conditions. A steady state audible alarm and light indicate that the program cycle has completed with no problems. A beeping alarm and flashing light indicates an abort condition for vacuum setpoint not reached. 2 test wafers were processed and measured to verify contact angle. Both wafers looked good. 5 points were measured on each wafer. Wafer #1- contact angle ~ 63 degrees. 2nd wafer contact angle- ~66 degrees. The system is currently not interlocked through coral. Please continue to enter comments, observations or problems in coral. Thanks.. Gary From edmyers at stanford.edu Fri Nov 16 18:48:41 2007 From: edmyers at stanford.edu (Ed Myers) Date: Fri, 16 Nov 2007 18:48:41 -0800 Subject: wbmiscres -SHUTDOWN Message-ID: <6.2.5.6.2.20071116184359.03dc59a0@stanford.edu> Lab Members, We had a significant leak in the wbmiscres (poly bench in litho). As a result we have shut the water off to the bench. The gooseneck, spray gun and dump rinser will not work. This will severely impact anyone wanting to do hand develop at this bench. The headway is still available. Regards, SNF Staff From gsosa at stanford.edu Mon Nov 19 08:43:31 2007 From: gsosa at stanford.edu (Gary J Sosa) Date: Mon, 19 Nov 2007 08:43:31 -0800 Subject: ASML Stepper Scheduled Downtime Message-ID: <20071119084331.owdjxojlwgs0sg8c@webmail.stanford.edu> Hi Labmembers.... We have re-scheduled the ASML stepper downtime for the week of December 17 through the 21st, 2007. During this time we will be installing the new He/O2 regulator and upgrading the applications software. ...Gary From gsosa at stanford.edu Mon Nov 19 12:06:23 2007 From: gsosa at stanford.edu (Gary J Sosa) Date: Mon, 19 Nov 2007 12:06:23 -0800 Subject: YES Oven coral interlock Message-ID: <20071119120623.h0yiumg88oswcw88@webmail.stanford.edu> Hi Labmembers... The YES Oven is now interlocked through coral. Please use coral to enable and disable the tool as before. Thanks.. Gary From leet at stanford.edu Mon Nov 19 13:46:52 2007 From: leet at stanford.edu (Thomas T. Lee) Date: Mon, 19 Nov 2007 13:46:52 -0800 Subject: 11/29/07 - OSA/SPIE Seminar: Dr. Richard Swanson, President & CTO, SunPower Message-ID: <4742044C.4050000@stanford.edu> Optical Society of America/SPIE Stanford Student Chapter and Stanford Photonics Research Center Present Dr. Richard Swanson, Ph.D. Co-Founder, President, and Chief Technology Officer SunPower Corporation Developments in Silicon Solar Cells Thursday, November 29, 2007 4:15 pm, Hewlett 201 Refreshments at 4:00pm Abstract Silicon solar cells are undergoing rapid development resulting in increasing performance and reduced cost. This talk discusses the major and efficiency limitations and cost elements of silicon solar cells, and shows how these are being improved. A roadmap to achieving grid electricity cost parity by 2012 through halving the installed cost of photovoltaic systems will be outlined. About Our Speaker Richard Swanson received the Ph.D. in Electrical Engineering from Stanford University in 1974. In 1976 he joined the faculty at Stanford. Prof. Swanson and his group conceived and developed the point-contact solar cell. Laboratory versions of these cells achieved record 28 percent conversion efficiency in concentrator cells and 23 percent large-area one-sun cells. In 1991 Dr. Swanson resigned from his faculty position to devote full time to SunPower Corporation, a company he founded to develop and commercialize cost-effective photovoltaic power systems. He is presently President and CTO of SunPower. Along with his students and co-workers, he has published over 200 articles in journals and conference proceedings, as well as several book chapters. In 2002, he was awarded the William R. Cherry award by the IEEE for outstanding contributions to the photovoltaic field, and in 2006 the Becquerel Prize in Photovoltaics from the European Communities. From mtang at stanford.edu Mon Nov 19 17:14:48 2007 From: mtang at stanford.edu (Mary Tang) Date: Mon, 19 Nov 2007 17:14:48 -0800 Subject: Announcing the Annual CIS/CISX End-of-year Party: Thursday, Dec. 13, 2 pm Message-ID: <47423508.5000600@stanford.edu> Save that date! There will be snacks, games, the traditional wafer toss, an opportunity to make your own silicon wafer ornament, and a chance to catch up with everyone before we all head off for the holidays. And if you'd like to help out, get in touch with us. Majorie & Mary (With thanks to the CIS Affiliates.) From leet at stanford.edu Mon Nov 19 17:31:39 2007 From: leet at stanford.edu (Thomas T. Lee) Date: Mon, 19 Nov 2007 17:31:39 -0800 Subject: Attaching dice to a chuck Message-ID: <474238FB.3090603@stanford.edu> Hi everyone, I have some very small dice that I'm trying to probe, but they keep getting blown away, presumably when the ventilation system in my lab turns on. Does anyone know of any electrically and thermally conductive adhesive that I can use to TEMPORARILY stick the die to the probe station chuck? It needs to be something that I can easily clean off the chuck and my die when I'm done. Thanks! --Tom -- "We choose to go to the moon. We choose to go to the moon in this decade and do the other things, not because they are easy, but because they are hard..." --John F. Kennedy From leet at stanford.edu Tue Nov 20 08:36:41 2007 From: leet at stanford.edu (Thomas T. Lee) Date: Tue, 20 Nov 2007 08:36:41 -0800 Subject: Attaching dice to a chuck In-Reply-To: <474238FB.3090603@stanford.edu> References: <474238FB.3090603@stanford.edu> Message-ID: <47430D19.1080808@stanford.edu> Thanks to everyone who replied. The support of this community continues to amaze me. :-) The responses I received essentially boil down to the adhesives used in SEM: silver paint, carbon tape/dots, and ElectroDag/Aquadag. Thanks again! --Tom Thomas T. Lee wrote: > Hi everyone, > > I have some very small dice that I'm trying to probe, but they keep > getting blown away, presumably when the ventilation system in my lab > turns on. Does anyone know of any electrically and thermally conductive > adhesive that I can use to TEMPORARILY stick the die to the probe > station chuck? It needs to be something that I can easily clean off the > chuck and my die when I'm done. > > Thanks! > --Tom > > > > -- "We choose to go to the moon. We choose to go to the moon in this decade and do the other things, not because they are easy, but because they are hard..." --John F. Kennedy From shott at stanford.edu Wed Nov 21 06:40:59 2007 From: shott at stanford.edu (John Shott) Date: Wed, 21 Nov 2007 06:40:59 -0800 Subject: Warning about CDE on Sunrays .... Message-ID: <4744437B.6000408@stanford.edu> An HTML attachment was scrubbed... URL: From bli003 at student.ucr.edu Wed Nov 21 11:30:49 2007 From: bli003 at student.ucr.edu (bli003 at student.ucr.edu) Date: Wed, 21 Nov 2007 11:30:49 -0800 (PST) Subject: LTO gas source Message-ID: <20071121113049.BAY25524@mh1.ucr.edu> Hi All, Does anyone know the gas source and their concentration in LTO? Thank you, Bei From shott at stanford.edu Wed Nov 21 14:06:13 2007 From: shott at stanford.edu (John Shott) Date: Wed, 21 Nov 2007 14:06:13 -0800 Subject: LTO gas source In-Reply-To: <20071121113049.BAY25524@mh1.ucr.edu> References: <20071121113049.BAY25524@mh1.ucr.edu> Message-ID: <4744ABD5.9070301@stanford.edu> Bei: I believe that the tylanbpsg tube uses 100% silane as the silicon source and a mixture of 15% PH3 in a balance of silane as the source of phosphorus for the doping. You may think that it's a bit strange to use silane as a "carrier gas". The thinking behind this is that, because phosphine is so toxic, you are actually better off mixing it with silane (which is pyrophoric and burns immediately in contact with air) because a small leak of the PH3/SiH4 mixture will tend to burn and convert the PH3 into less toxic P2O5. Plus, either by virtue of seeing the powder build-up that results from the reaction of PH3/SiH4 with air, that you are more likely to visually spot a small leak. Let me know if you have any other questions, John From shott at stanford.edu Wed Nov 21 14:18:17 2007 From: shott at stanford.edu (John Shott) Date: Wed, 21 Nov 2007 14:18:17 -0800 Subject: [POSSIBLE VIRUS:###] [Fwd: fiber test question] Message-ID: <4744AEA9.1000903@stanford.edu> An HTML attachment was scrubbed... URL: -------------- next part -------------- An embedded message was scrubbed... From: Garrett Cole Subject: fiber test question Date: Wed, 21 Nov 2007 08:56:32 -0800 Size: 164410 URL: From iwjung at stanford.edu Wed Nov 21 16:10:17 2007 From: iwjung at stanford.edu (Il Woong Jung) Date: Wed, 21 Nov 2007 16:10:17 -0800 Subject: fiber test question In-Reply-To: <7.0.1.0.2.20071121083758.024e3970@llnl.gov> Message-ID: <20071122001041.7E5BC4C0AC@smtp3.stanford.edu> Hi Garrett, I believe this component is a fiber probe from Cascade Microtech. I remember this from a few years back when we were looking at purchasing a probe station. I have attached the brochure. I hope this helps. Best, Ilwoong Il Woong Jung, Ph.D. Postdoctoral Scholar E. L. Ginzton Labs Rm. 50 450 Via Palou S31 Stanford, CA 94305 phone: 650-723-9659 fax: 650-725-2533 email: iwjung at stanford.edu _____ From: Garrett Cole [mailto:cole35 at llnl.gov] Sent: Wednesday, November 21, 2007 8:57 AM To: John Shott Subject: fiber test question John - Can you please forward the following message to the Stanford labmembers mailing list: I am hoping that someone can help me to track down the following fiber-optic component. I have been searching for the lensed-fiber holder pictured here (within red circle) and cannot figure out where to find one: [] One of the biggest issues is that I don't know what the proper name is. As a basic description, it is a rigid mount for bringing a lensed fiber into close proximity with a sample under a microscope; I would assume that it is typically used for aligning to surface normal emitters and detectors. It has a connector on the back end and a small section of bare lensed-fiber on the input/output end. I had access to one of these at UC Santa Barbara for characterizing VCSELs, but I cannot remember who manufactured it. If you are familiar with this component and can point me towards the proper vendor please send me a reply (cole35 at llnl.gov). Thank you, Garrett ____________________________________ Garrett Cole, PhD Postdoctoral Researcher Center for Micro- and Nanotechnologies Lawrence Livermore National Laboratory office: 925-424-5093 email: cole35 at llnl.gov ____________________________________ -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.jpg Type: image/jpeg Size: 54524 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: LWP_DS[1].pdf Type: application/pdf Size: 423433 bytes Desc: not available URL: From ehe at stanford.edu Sat Nov 24 14:04:07 2007 From: ehe at stanford.edu (Elizabeth Edwards) Date: Sat, 24 Nov 2007 14:04:07 -0800 Subject: AWN light on Message-ID: Acid waste neutralization system full... From shott at stanford.edu Sun Nov 25 07:31:20 2007 From: shott at stanford.edu (John Shott) Date: Sun, 25 Nov 2007 07:31:20 -0800 Subject: Sunray and AWN problems on Saturday afternoon/evening .... Message-ID: <47499548.4040004@stanford.edu> An HTML attachment was scrubbed... URL: From rissman at stanford.edu Mon Nov 26 11:01:31 2007 From: rissman at stanford.edu (Paul Rissman) Date: Mon, 26 Nov 2007 11:01:31 -0800 Subject: nitrogen vaporizer upgrade Message-ID: <200711261901.lAQJ1YEO031149@smtp-roam.Stanford.EDU> Dear Labmembers and CIS Lab Occupants: For the past few years, we have been working with Air Products on an upgrade of our nitrogen vaporizer system. As you may be aware, Air Products supplies our bulk liquid gases and, to some extent, the facilities for vaporizing them to gas form so that they can be used as process gases in our labs in SNF and CISX. Collectively, we are now extracting anywhere between 3-4X the amount of gaseous nitrogen that our vaporizers are rated for. Needless to say, this is not the best way to run. Through a series of negotiations, Air Products has generously agreed to donate equipment and services to upgrade our vaporizers. In the current plan, Air Products will use a tanker truck to provide a temporary N2 in order to ensure continuous supply to the CIS and CISX buildings during this transition. The temporary supply will be hooked up on Tuesday, December 18 and there should be no noticeable change in services. From Wednesday, December 19 through Friday, December 21, the larger vaporizer and new N2 purifiers will be installed. Once the new system is leak-checked and certified, it will go on-line and the temporary N2 supply will be removed. During this time, metering systems will also be installed in order to allow us to get a handle on nitrogen usage. As you may be aware, liquid nitrogen is the largest single expense in this building. We have been looking forward for a long time for this upgrade; this should facilitate a more reliable and cleaner supply of N2 for the building. However, one aspect of this installation has the potential to affect quality of gas delivered. For staging the installation, the gas purifiers for bulk O2 and ultra-high purity N2 will need to be bypassed. This is tentatively planned for Monday, December 10, although we need to confirm this date. Air Products' testing indicates that the current N2 purifier system does not significantly improve the quality of the delivered gas so bypassing this should not have a noticeable effect. However, the O2 purifier seems to be somewhat effective at filtering particles (1357 particles >0.1 um at the inlet versus undetectable amounts at the outlet.) So, please be aware that between December 10, when the O2 purifier is taken off-line and December 21, when the new O2 filter is installed, that the quality of the O2 may be somewhat compromised. This is not anticipated to affect most operations in SNF (namely, etches and depositions) but critical operations, such as very thin gate oxides, may be vulnerable. Please be aware of this when planning your experiments. We apologize for the inconvenience these changes may cause. But please understand that these changes are necessary to ensure reliable and continuous bulk gas supplies. If you have any further questions or concerns about this upgrade, please contact Ted Berg. Paul Rissman From mahnaz at stanford.edu Tue Nov 27 11:30:37 2007 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Tue, 27 Nov 2007 11:30:37 -0800 Subject: Missing mask Message-ID: <474C705D.3040708@stanford.edu> Hello all, I am missing one of my resolution mask, if you have seen it or you have borrowed it please return it to me. I need it. It should have my name on it. Thanks mahnaz From jennyhu at stanford.edu Tue Nov 27 14:35:42 2007 From: jennyhu at stanford.edu (Jenny Hu) Date: Tue, 27 Nov 2007 14:35:42 -0800 Subject: Potassium Cyanide (KCN) Message-ID: <20071127143542.qtw87tbjtw0g8w48@webmail.stanford.edu> Dear Labmembers, Does anyone have some Potassium Cyanide (KCN) that I could use once or twice? I would like to try it out before purchasing my own. Thank you in advance! Thanks, Jenny From kocabas at stanford.edu Wed Nov 28 15:44:30 2007 From: kocabas at stanford.edu (S. Ekin Kocabas) Date: Wed, 28 Nov 2007 15:44:30 -0800 Subject: How to etch silicon on pieces In-Reply-To: References: <466C898A.3020808@stanford.edu> Message-ID: Hi Josh, and members of SNF, I forgot to follow up on my previous email which was sent on June 10. Here's what I do to etch pieces of SOI wafers 1. Thin down the Silicon thickness of the SOI wafer to desired value via cyclic oxidation, wet etching and ellipsometric thickness measurement of Si 2. Cleave the wafer into pieces 3. Coat the piece with with 5% PMMA ( 4000rpm at Headway, gives around 220nm thickness measured by Woolam ellipsometer. To be able to measure PMMA thickness with Woolam first use a dummy Si wafer, coat it with PMMA, extract PMMA characteristics and save it as a Cauchy material. Then create a stack of Silicon-Oxide-Silicon-PMMA model, do spectroscopic scans and normal fits) 4. Do e-beam lithography with Raith 5. Develop using standard recipe (30 sec in 1:3 MIBK:IPA , 30 sec in IPA, blow dry) 6. Stick the piece at the center of a clean dummy wafer using Kapton tape that can be purchased from the stock room. Have separate sharp pointed tweezers for this purpose. In more detail (thanks to Rohan for showing all this to me) 1. Stick strips of tape cut by scissors on the outside of a tweezer box 2. Use a razor blade to cut the strips into fine lines of desired width&length while the strips are stuck on the box 3. Use a fine pointed tweezer to pick up the cut strips 4. Stick the sample to the carrier wafer with tape on all four corners. Use one tweezer to stabilize the piece, another to pick up a strip of tape from the top of the tweezer box and stick the sample 7. Use P5000 Chamber C, standard poly etch recipe (always double check that the recipe is not modified by comparing against the printed copy in the Chamber C folder at P5000) with BT=10 sec, ME=10 sec, OE = 0 sec, Pump=120 sec . This etches away 60-70nm Si while not etching all the way through the PMMA 8. Get rid of the PMMA by dipping it in heated Remover PG (around 40 celcius) for 10mins at the solvent wet bench. The ultrasonic takes forever to heat, so use the hot plate with a thermometer. Use a long beaker that can be found next to wbgeneral. Use acetone, methanol, IPA to finish off. I hope this helps. It's always best to double check stuff, so if you'd like to do this yourself, I'd suggest you start with a sample that does not have a lot of time invested on it. Ekin On Nov 28, 2007 3:08 PM, Josh Ratchford wrote: > Hi Ekin, > > I searched my email account to find information from lab users about > silicon etching. Do you mind forwarding me the information you recieved > from your inquiry about silicon etching. > > Thank you, > > Josh > > On Jun 10, 2007 3:30 PM, S. Ekin Kocabas wrote: > > > Dear Labmembers, > > > > I would like to be able to etch silicon on SOI pieces. While I'm waiting > > for the SOI wafers to arrive, I'm testing the process flow with full > > silicon wafers. I have used P5000 to etch silicon on full wafers, and > > the results look alright. Which tools do you use to do silicon etching > > on pieces with PMMA on them? What kind of problems do/did you face? > > > > I'd appreciate any information you can provide. If you could reply to my > > email ( kocabas at stanford.edu ), I'll compile the answers in a nice form > > and send it to the labmembers list. > > > > Thank you, > > > > Ekin > > > > PS: I sent a very similar email to the Raith list earlier today. It was > > recommended that I send the email to the general labmembers email list. > > I'm sorry for the duplicate emails that raith at snf members received. > > > > -------------- next part -------------- An HTML attachment was scrubbed... URL: From raneeyoo at stanford.edu Wed Nov 28 16:03:10 2007 From: raneeyoo at stanford.edu (Kyeongran Yoo) Date: Wed, 28 Nov 2007 16:03:10 -0800 Subject: clean Si pocket wafer for tylan nitride? Message-ID: <20071128160310.dtz2aaan4kcc00o0@webmail.stanford.edu> Dear Labmembers, I would like to deposit nitride on small pieces of Si and SOI wafers using tylan nitride. I am wondering if one of you have a clean Si pocket wafer. It would be great if you could let me use your pocket wafer. Please let me know and thank you very much. best, Kyeongran Yoo From gunhan at stanford.edu Wed Nov 28 21:40:29 2007 From: gunhan at stanford.edu (gunhan at stanford.edu) Date: Wed, 28 Nov 2007 21:40:29 -0800 Subject: Potassium Cyanide (KCN) In-Reply-To: <20071127143542.qtw87tbjtw0g8w48@webmail.stanford.edu> References: <20071127143542.qtw87tbjtw0g8w48@webmail.stanford.edu> Message-ID: <000501c8324a$5b76cc20$3a6418ac@ausencia> Jenny, KCN is a very, very toxic material like the other cynanide salts. Just wanted to make sure that you really know how strong its toxicity is. "Toxicity Cyanide salts are among the most rapidly acting of all known poisons. Cyanide is a potent inhibitor of cellular respiration, acting on mitochondrial cytochrome c oxidase and hence blocking oxidative phosphorylation. This prevents the body from oxidising food to produce useful energy. Lactic acidosis then occurs as a consequence of anaerobic metabolism. Initially, acute cyanide poisoning causes a red or ruddy complexion in the victim because the tissues are not able to use the oxygen in the blood. The effects of potassium cyanide are virtually identical to sodium cyanide. Once more than 100-200 mg of potassium cyanide is absorbed, consciousness is lost within one minute, sometimes within 10 seconds, depending on the person involved and the amount of food present in the stomach. After a span of about 45 minutes, the body goes into a state of coma or deep sleep and the person may die within two hours if not treated medically. During this period, convulsions may occur. Death occurs mainly by cardiac arrest." -gunhan -----Original Message----- From: Jenny Hu [mailto:jennyhu at stanford.edu] Sent: Tuesday, November 27, 2007 2:36 PM To: labmembers at snf.stanford.edu Subject: Potassium Cyanide (KCN) Dear Labmembers, Does anyone have some Potassium Cyanide (KCN) that I could use once or twice? I would like to try it out before purchasing my own. Thank you in advance! Thanks, Jenny From dalyx at stanford.edu Thu Nov 29 14:19:03 2007 From: dalyx at stanford.edu (Dany-Sebastien Ly-Gagnon) Date: Thu, 29 Nov 2007 14:19:03 -0800 Subject: Reminder: Today 4:15pm - OSA/SPIE Seminar: Dr. Richard Swanson, President & CTO, SunPower Message-ID: <7f014b6b0711291419r7b074868nbb5925ab8daaa90e@mail.gmail.com> Optical Society of America/SPIE Stanford Student Chapter and Stanford Photonics Research Center Present Dr. Richard Swanson, Ph.D. Co-Founder, President, and Chief Technology Officer SunPower Corporation Developments in Silicon Solar Cells Thursday, November 29, 2007 4:15 pm, Hewlett 201 Refreshments at 4:00pm Abstract Silicon solar cells are undergoing rapid development resulting in increasing performance and reduced cost. This talk discusses the major and efficiency limitations and cost elements of silicon solar cells, and shows how these are being improved. A roadmap to achieving grid electricity cost parity by 2012 through halving the installed cost of photovoltaic systems will be outlined. About Our Speaker Richard Swanson received the Ph.D. in Electrical Engineering from Stanford University in 1974. In 1976 he joined the faculty at Stanford. Prof. Swanson and his group conceived and developed the point-contact solar cell. Laboratory versions of these cells achieved record 28 percent conversion efficiency in concentrator cells and 23 percent large-area one-sun cells. In 1991 Dr. Swanson resigned from his faculty position to devote full time to SunPower Corporation, a company he founded to develop and commercialize cost-effective photovoltaic power systems. He is presently President and CTO of SunPower. Along with his students and co-workers, he has published over 200 articles in journals and conference proceedings, as well as several book chapters. In 2002, he was awarded the William R. Cherry award by the IEEE for outstanding contributions to the photovoltaic field, and in 2006 the Becquerel Prize in Photovoltaics from the European Communities. From tzewee at stanford.edu Thu Nov 29 14:20:38 2007 From: tzewee at stanford.edu (tzewee at stanford.edu) Date: Thu, 29 Nov 2007 14:20:38 -0800 Subject: Carbon tape for SEM Message-ID: <20071129142038.38rntk5h1s80ocsw@webmail.stanford.edu> Dear Lab members, I need to get some carbon tape/dots that are used for attaching samples to the chuck. May I know where I can quickly get a small amount of these things? Thanks, and have a great week ahead. Tze Wee From bfeller at stanford.edu Thu Nov 29 15:37:37 2007 From: bfeller at stanford.edu (Bobby Feller) Date: Thu, 29 Nov 2007 15:37:37 -0800 Subject: Phototachometer Message-ID: <20071129233724.984AF4BDB6@smtp3.stanford.edu> Hello, Does anyone have a phototachometer that I could borrow for an afternoon? We would like to calibrate a spin coater. Thanks, Bobby -------------- next part -------------- An HTML attachment was scrubbed... URL: From amf at amfitzgerald.com Fri Nov 30 09:41:56 2007 From: amf at amfitzgerald.com (Alissa M. Fitzgerald) Date: Fri, 30 Nov 2007 09:41:56 -0800 Subject: Thin film black coatings (IR absorbing) Message-ID: <001a01c83378$4d823490$0400a8c0@minicat> Dear all, Does anyone out there know a vendor or a process for depositing a thin black (or very dark) layer onto wafers? We are seeking an IR-absorbing layer that can be deposited and patterned (likely through lift-off). Any and all suggestions are welcome. I am aware of "gold black" and "nickel black" - metal sputtered in a N2 atmosphere - but I heard that it deposits as a powdery material and therefore would be difficult to pattern, etc. Please let me know if you have information otherwise, and especially if you know of a place to get service. Other processes we have thought about and might consider: sputter deposition of carbon or any other dark film, or plasma etching of a metal surface to roughen it up to lower its reflectivity. Any details or creative ideas would be welcome! Best regards, Alissa Alissa M. Fitzgerald, Ph.D. Managing Member A.M. Fitzgerald & Associates, LLC 655 Skyway Suite 118 San Carlos, CA 94070 +1 (650) 592-6100 x101 phone +1 (650) 592-6111 fax www.amfitzgerald.com -------------- next part -------------- An HTML attachment was scrubbed... URL: From jkoma at stanford.edu Fri Nov 30 15:29:32 2007 From: jkoma at stanford.edu (Jason Komadina) Date: Fri, 30 Nov 2007 15:29:32 -0800 Subject: In2O3 deposition Message-ID: <47509CDC.9030309@stanford.edu> Does anyone have experience with indium oxide deposition? I'm looking into ALD precursors to use, but am also open to other options. Thanks, Jason Komadina From bdai at stanford.edu Fri Nov 30 18:04:26 2007 From: bdai at stanford.edu (Bing Dai) Date: Fri, 30 Nov 2007 18:04:26 -0800 Subject: How to Thin the Silicon Substrate From Backside on Pieces Message-ID: <002801c833be$8034dcd0$809e9670$@edu> Dear Labmembers, I would like to thin the silicon substrate from the backside of my sample to form a 50um X 50um window with ~100um thick silicon remaining. The sample has some metal (Cu/Ni) nano-structures built on top of the silicon substrate and covered by 1um thick SiO2. Both the surface of SiO2 and the substrate window need to be flat after the processing. Are there any mechanical or chemical methods/tools for this purpose? I would appreciate any information you provide. Thanks, Bing