Tungsten Wet etch

Arvind Kamath akamath at kovio.com
Tue Apr 22 16:17:32 PDT 2008


       We have a resist lifting problem while etching 0.4um of sputtered W on SiO2 using HMDS/Shipley 3612 1um resist. All feature sizes start to peel off after about 1min of etching.

        H2O2 is used as etchant @35C.

        Can anyone suggest a known good process for this (etchant, adhesion promoter, process conditions)?

For the record, I do not see lifting with resist on SiO2 processed at the same time in the bath.


                                Arvind Kamath

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