photo resist pretreatment before ion implantation

Caner Onal caner at stanford.edu
Wed Apr 23 22:45:43 PDT 2008


Hi SangBum,

Just wanted to clarify one point here:

The second 30min 110 C bake is not needed if you send your wafers for  
implant right away. It is intended for wafers that sit around for a  
long while (this is the case for ee410, sometimes the wafers wait in  
the lab for 2-3 days before the implant step). The reason is that if  
you leave your wafers waiting around for a long time the resist layer  
tends to absorb moisture from the ambient and this reverses the effect  
of baking.

Hope this saves you some time,
Caner.

On Apr 23, 2008, at 9:12 PM, SangBum Kim wrote:

> Thank you for those who sent me the reply. I found a recipe from  
> ee410 class runsheet, which you can find at http://www.stanford.edu/class/ee410/#HO 
>  thanks to Mary's help.
>
> 0) After developing 1um thick 3612,
> 1) 30mins at 110C
> 2) 15mins UV exposure
> 3) 30mins at 110C
> 4) Ion implantation
>
> SangBum
>
>
> SangBum Kim wrote:
>>
>> Dear SNF labmembers,
>>
>>  Could anyone give me some advice on typical photoresist  
>> pretreatment before ion implantation, please?
>>  For example, do I need 1) UV hardening of resist or 2) heat  
>> treatment? Any other suggestions?
>>
>>  I plan to use ion implantation service from Innovion and use 1.6um  
>> thick SPR 3612 as a photoresist with maximum As ion energy of 180keV.
>>
>> Thanks,
>> SangBum
>
>

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