Special seminar by Prof. Luca Larcher on leakage in gate dielectrics
saraswat at cis.stanford.edu
Mon Feb 4 22:33:15 PST 2008
Prof. Luca Larcher
University of Modena and Reggio Emilia, Italy
STATISTICAL MODELING OF LEAKAGE CURRENTS THROUGH SIO2/HIGH-K
In Packard 204, on Friday, February 8, 2008, at 3 pm
In this talk, a statistical Monte Carlo (MC) simulator modeling
leakage currents across SiO2/high-k dielectric stacks is presented.
It will be shown that simulations accurately reproduce experimental
currents measured also at various temperatures on capacitors with
various high-k (HfO2, HfSiON, Al2O3) dielectric stacks.
Statistical simulations are exploited to investigate the impact of
high-k’s traps on leakage current distribution for Flash memory
applications, demonstrating that defects strongly reduces the
potential improvement due to the introduction of band-gap engineered
high-k tunnel dielectric stacks.
In this regard, the simulator is a useful tool to optimize high-k
tunnel stacks and to improve technology-reliability issues related to
Flash memory applications.
Prof. Luca Larcher graduated in Electronic Engineering from the
University of Padova, Italy, in 1998. He received his Ph.D. degree in
2001 from the University of Modena and Reggio Emilia, working on the
compact modeling of non-volatile memories (E2PROM and Flash). He is
currently Assistant Professor of Electronics at the University of
Modena and Reggio Emilia, Italy. His research interests concern
mainly the electrical characterization, the compact modeling and the
failure mechanism analysis of standard and innovative Flash memories.
He is working on the characterization and design of Radio Frequency
integrated circuits in CMOS technology. He authored and coauthored a
book (“Floating Gate Devices: Operation and Compact Modeling,” P.
Pavan, L. Larcher, and A. Marmiroli, Kluwer Academic Press, Boston,
ISBN 1-4020-7731-9, January 2004), and more than 55 technical papers.
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