AMT for etching <100 nm features on AMTEtcher: Results

Rohan D. Kekatpure rohank at stanford.edu
Wed Feb 6 12:06:00 PST 2008


Hi All,

I had asked a few days ago about using AMTEtcher for etching small  
(50-100 nm) features in Silicon/SOI. Alex Guichard and myself  
performed three tests and tried to etch features ranging between 200  
nm to 50 nm widths (defined on Raith) on AMTetcher. The recipe was the  
following (suggested by Jim McVittie):

Substrate: SOI
Pressure: 20 mT
NF3: 20 sccm
Hexode Temp: 20-22 C
Power setting: 1600 W
Transmitted Power: 754/722 W
Reflected power:  21/0 W
Bias setting: -430 V

The etch rate was pretty repeatable and typically varied between 30 nm/ 
min to 33 nm/min. If you are interested further, send me an email and  
I will send you the SEMs.

Sincere thanks to everybody who provided their inputs.

-Rohan




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