From mtang at stanford.edu Tue Sep 2 16:02:54 2008 From: mtang at stanford.edu (Mary Tang) Date: Tue, 02 Sep 2008 16:02:54 -0700 Subject: End of Summer BBQ: Thursday, 9/11, CISX Patio Message-ID: <48BDC61E.9050909@stanford.edu> To everyone in the CIS/CISX buildings and SNF lab denizens -- Come celebrate the end of summer with a BBQ - next Thursday, September 11, from 11:30-1. There will hamburgers, hot dogs -- and if you're so inspired, a side-dish to share would be most welcome. Hope to see you there! (Brought to you by the CIS Affiliates Program with additional support from your SNF staff) -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mbaran at stanford.edu Wed Sep 3 13:02:10 2008 From: mbaran at stanford.edu (Maureen Baran) Date: Wed, 3 Sep 2008 13:02:10 -0700 Subject: Camera found outside the lab - Be prepared to describe it Message-ID: <20080903200210.DCB4C2D69D0@smtp1.stanford.edu> A concerned labmember found a camera outside the lab. If this is your camera please come by my cubicle #41 and be prepared to describe it. Maureen Maureen Baran Stanford Nanofabrication Facility Lab Services Administrator mbaran at stanford.edu 650-725-3664 -------------- next part -------------- An HTML attachment was scrubbed... URL: From donghun.choi at stanford.edu Wed Sep 3 13:58:46 2008 From: donghun.choi at stanford.edu (Donghun Choi) Date: Wed, 3 Sep 2008 13:58:46 -0700 Subject: Donghun Choi Ph. D Oral Defense, Wednesday, September 10. 10 am Message-ID: Title: III-V semiconductor growth on Ge/Si & surface passivation for CMOS technology Name: Donghun Choi Advisor: Prof. James S. Harris Time: 10am, Wednesday, September 10, 2008 (refreshments at 9:45am) Place: CISX Auditorium Abstract : Integration of III-V compound semiconductors on Silicon substrates has recently received much attention for the development of optoelectronic and high speed electronic devices. However, as is well known, there are some key challenges for the realization of III-V device fabrication on Si substrates: (i) the large lattice mismatch (in case of GaAs: 4.1%) and (ii) the formation of anti-phase domain (APD) due to the polar compound semiconductor growth on non-polar elemental structure. Besides these growth issues, the lack of a useful surface passivation technology for compound semiconductors has precluded development of metal-oxide-semiconductor (MOS) devices and causes high surface recombination parasitics in scaled devices. This work demonstrates the growth of high quality III-V materials on Si via an intermediate Ge buffer layer, and some surface passivation methods to reduce interface defect density for the fabrication of MOS devices. The initial goal was to achieve both low threading dislocation density (TDD) and low surface roughness on Ge/Si heterostructure growth. This was achieved by repeating a deposition-annealing cycle consisting of low temperature deposition + high temperature-high rate deposition + high temperature hydrogen annealing, using reduced-pressure chemical-vapor-deposition. We then grew III-V materials on these virtual Ge/Si substrates using molecular- beam epitaxy. The relation between initial Ge surface configuration and anti-phase boundary formation was investigated using Ge surface reflection high energy electron diffraction (RHEED) pattern and AFM images analysis. In addition, some MBE growth techniques, such as migration enhanced epitaxy (MEE) and low temperature GaAs growth, were adopted to improve surface roughness and solve Ge self-doping problem. Finally, an Al2O3 gate oxide layer was deposited using atomic-layer-deposition system after HCl native oxide etching and ALD in-situ pre-annealing at 400 ?C. A 100nm thick aluminum layer was deposited to form the gate contact for a MOS device fabrication. The C-V measurements show very small frequency dispersion and 200-300mV hysteresis, comparable to our best results for InGaAs/GaAs MOS structures on GaAs substrate. Most notably, the quasi-static C-V curve demonstrates clear inversion layer formation. I-V curves show a reasonable leakage current level. The inferred midgap interface state density Dit of 2.4?1012cm-2eV-1 was calculated by combined high-low frequency capacitance method. In addition, we investigated the interface properties of amorphous LaAlO3/GaAs MOS capacitors fabricated on GaAs substrate. The surface was protected during sample transfer between III-V and oxide MBD chambers by a thick arsenic-capping layer. An annealing method, a low temperature-short time RTA followed by a high temperature RTA, was developed, yielding extremely small hysteresis (~30 mV), frequency dispersion (~60 mV), and interface trap density (mid 1010 eV-1cm-2). We used capacitance-voltage (C-V) and current-voltage (I-V) measurements for electrical characterization of MOS devices, tapping-mode atomic force microscopy (AFM) for surface morphology analysis, x-ray photoelectron spectroscopy (XPS) for chemical elements analysis of interface, cross section transmission-electron microscopy (TEM), x-ray diffraction (XRD), secondary ion mass spectrometry (SIMS) and photoluminescence (PL) measurement for film quality characterization. This successful growth and appropriate surface treatments of II-V materials provides a first step for the fabrication of III-V optical and electrical devices on the same Si-based electronic circuits. ------------------------------------------------------------------------------------------------------------- Donghun Choi Ph.D Candidate Dep. of Electrical Engineering Center for Integrated Systerms Prof. James S. Harris group 420 Via Ortega, CIS-X Rm 126x Solid State & Photonics Lab Stanford, CA 94305 Ph: (650) 725-8313 Fax : (650) 723-4659 E-Mail:donghun.choi at stanford.edu http://snowboard.stanford.edu/~dhchoi -------------------------------------------------------------------------------------------------------------- -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Thu Sep 4 17:26:36 2008 From: mtang at stanford.edu (Mary Tang) Date: Thu, 04 Sep 2008 17:26:36 -0700 Subject: Key Card Access Problems Reported Message-ID: <48C07CBC.2040900@stanford.edu> Dear Labmembers -- If you are having key card problems, it is likely because some key cards were set to expire on 9/1/08. We have asked the ITSS group to reset active cards automatically. Until then, please get in touch with Maureen or John during regular hours and they can help reset your card manually. Apologies for the inconvenience. Your Lab Staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at stanford.edu Fri Sep 5 11:37:08 2008 From: mtang at stanford.edu (Mary Tang) Date: Fri, 05 Sep 2008 11:37:08 -0700 Subject: Process Clinic, Monday, 9/8, 2-4 pm Message-ID: <48C17C54.4070401@stanford.edu> Hi all -- Next Process Clinic is Monday, 9/8 from 2-4 pm in the cubicle area near Maureen's office. Bring your process questions, your process flows, and device layouts. Keith Best from ASML will also be on hand. All labmembers (and prospective labmembers) are welcome. Your SNF Staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From shott at stanford.edu Fri Sep 5 14:55:03 2008 From: shott at stanford.edu (John Shott) Date: Fri, 05 Sep 2008 14:55:03 -0700 Subject: Chilled water and CDA off .... Message-ID: <48C1AAB7.7090908@stanford.edu> SNF Lab Members: I have just been informed that process chilled water and CDA (compressed dry air) have just gone off .... and this was not a planned outage. This means that a number of tools will not work properly, some will have to be shutdown, and some things will be in danger of overheating. We will be going around to shutdown those things that we believe need to be shutdown. Other tools will likely shut themselves down when either cooling water flow or temperature is too high or when CDA pressure falls. So .... please process carefully until things have recovered .... it's very likely that many tools will be affected so please keep your eyes open. We'll try to keep you informed as soon as we know more .... Thanks, John From mtang at stanford.edu Fri Sep 5 15:39:56 2008 From: mtang at stanford.edu (Mary Tang) Date: Fri, 05 Sep 2008 15:39:56 -0700 Subject: Utilities Problem in the Lab Message-ID: <48C1B53C.4030706@stanford.edu> Labmembers -- Facilities informs us that process chilled water and compressed air are limited or unavailable. This affects most of the equipment in the lab. The cause is under investigation. We do not have information about when utilities will be back in service. Until repairs are made, labmembers are advised not to plan on working in the lab. Labmembers working in the lab now: please finish what you are doing but do not start new processing. Apologies for the inconvenience. We will update you on the status of the lab as we hear news. Your Lab Staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at stanford.edu Fri Sep 5 16:30:36 2008 From: mtang at stanford.edu (Mary Tang) Date: Fri, 05 Sep 2008 16:30:36 -0700 Subject: Lab Utilities OK now Message-ID: <48C1C11C.1010009@stanford.edu> Hi again -- Facilities and John have worked to identify the problem and bring up utilities in the lab, so we're back in business now. More repairs will be done on Monday, but these are not expected to affect normal operations for the most part. Thanks for your patience (-- and thanks to John and FacOps!) -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From shott at stanford.edu Fri Sep 5 17:13:02 2008 From: shott at stanford.edu (John Shott) Date: Fri, 05 Sep 2008 17:13:02 -0700 Subject: Compressed Air Failure at 5 p.m. .... Message-ID: <48C1CB0E.6090304@stanford.edu> SNF Lab Members: Gaack!!! The Compressed Dry Air (CDA) has just failed and pressure has dropped to nearly zero. Unfortunately, this will likely affect many tools. We have called the facilities off-hours number and Leonard Chan and Jose Solorozano are being called back to campus. Given that they are likely already on the roads, it will likely take at least an hour for them to return and then we'll have to see what the problem is. Please be on the lookout in there .... I believe that many pieces of equipment will not be running properly (if at all) at this time. We'll keep you posted as soon as we know more. Sorry for the inconvenience, John From shott at stanford.edu Fri Sep 5 22:43:49 2008 From: shott at stanford.edu (John Shott) Date: Fri, 05 Sep 2008 22:43:49 -0700 Subject: Compressed Air back on!!! Message-ID: <48C21895.2050201@stanford.edu> SNF Lab Members (and folks with other labs depended on Compressed Dry Air): As of about 9:30 p.m. the compressed air is back on and .... hopefully .... will stay that way over the weekend. Most tools appear to be coming back to life without too much fussing .... but please check carefully for normal operation if you are processing this weekend. If there seems to be a failure over the weekend, call work control at x3-2281 .... they should be best able to call the appropriate folks to deal with this situation. We apologize for the inconvenience, but hope that you all have a productive remainder of the weekend. Happy processing, John From dhchoi at snowboard.stanford.edu Tue Sep 9 10:20:46 2008 From: dhchoi at snowboard.stanford.edu (Donghun Choi) Date: Tue, 9 Sep 2008 10:20:46 -0700 Subject: Reminder: Donghun Choi Ph. D Oral Defense, Wednesday, September 10. 10 am (Tomorrow) Message-ID: PhD Thesis Oral Examination Title: III-V semiconductor growth on Ge/Si & surface passivation for CMOS technology Candidate: Donghun Choi Advisor: Prof. James S. Harris Time: 10am, Wednesday, September 10, 2008 (refreshments at 9:45am) Place: CISX Auditorium http://campus-map.stanford.edu/index.cfm?ID=04-055 Abstract : Integration of III-V compound semiconductors on Silicon substrates has recently received much attention for the development of optoelectronic and high speed electronic devices. However, as is well known, there are some key challenges for the realization of III-V device fabrication on Si substrates: (i) the large lattice mismatch (in case of GaAs: 4.1%) and (ii) the formation of anti-phase domain (APD) due to the polar compound semiconductor growth on non-polar elemental structure. Besides these growth issues, the lack of a useful surface passivation technology for compound semiconductors has precluded development of metal-oxide-semiconductor (MOS) devices and causes high surface recombination parasitics in scaled devices. This work demonstrates the growth of high quality III-V materials on Si via an intermediate Ge buffer layer, and some surface passivation methods to reduce interface defect density for the fabrication of MOS devices. The initial goal was to achieve both low threading dislocation density (TDD) and low surface roughness on Ge/Si heterostructure growth. This was achieved by repeating a deposition-annealing cycle consisting of low temperature deposition + high temperature-high rate deposition + high temperature hydrogen annealing, using reduced-pressure chemical-vapor-deposition. We then grew III-V materials on these virtual Ge/Si substrates using molecular- beam epitaxy. The relation between initial Ge surface configuration and anti-phase boundary formation was investigated using Ge surface reflection high energy electron diffraction (RHEED) pattern and AFM images analysis. In addition, some MBE growth techniques, such as migration enhanced epitaxy (MEE) and low temperature GaAs growth, were adopted to improve surface roughness and solve Ge self-doping problem. Finally, an Al2O3 gate oxide layer was deposited using atomic-layer-deposition system after HCl native oxide etching and ALD in-situ pre-annealing at 400 ?C. A 100nm thick aluminum layer was deposited to form the gate contact for a MOS device fabrication. The C-V measurements show very small frequency dispersion and 200-300mV hysteresis, comparable to our best results for InGaAs/GaAs MOS structures on GaAs substrate. Most notably, the quasi-static C-V curve demonstrates clear inversion layer formation. I-V curves show a reasonable leakage current level. The inferred midgap interface state density Dit of 2.4?1012cm-2eV-1 was calculated by combined high-low frequency capacitance method. In addition, we investigated the interface properties of amorphous LaAlO3/GaAs MOS capacitors fabricated on GaAs substrate. The surface was protected during sample transfer between III-V and oxide MBD chambers by a thick arsenic-capping layer. An annealing method, a low temperature-short time RTA followed by a high temperature RTA, was developed, yielding extremely small hysteresis (~30 mV), frequency dispersion (~60 mV), and interface trap density (mid 1010 eV-1cm-2). We used capacitance-voltage (C-V) and current-voltage (I-V) measurements for electrical characterization of MOS devices, tapping-mode atomic force microscopy (AFM) for surface morphology analysis, x-ray photoelectron spectroscopy (XPS) for chemical elements analysis of interface, cross section transmission-electron microscopy (TEM), x-ray diffraction (XRD), secondary ion mass spectrometry (SIMS) and photoluminescence (PL) measurement for film quality characterization. This successful growth and appropriate surface treatments of II-V materials provides a first step for the fabrication of III-V optical and electrical devices on the same Si-based electronic circuits. ------------------------------------------------------------------------------------------------------------- Donghun Choi Ph.D Candidate Dep. of Electrical Engineering Center for Integrated Systerms Prof. James S. Harris group 420 Via Ortega, CIS-X Rm 126x Solid State & Photonics Lab Stanford, CA 94305 Ph: (650) 725-8313 Fax : (650) 723-4659 E-Mail:donghun.choi at stanford.edu http://snowboard.stanford.edu/~dhchoi -------------------------------------------------------------------------------------------------------------- -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Tue Sep 9 10:25:53 2008 From: mtang at stanford.edu (Mary Tang) Date: Tue, 09 Sep 2008 10:25:53 -0700 Subject: Venture Clinic w/Shahin Farschi Tuesday, 3 pm, CIS 101 (today) Message-ID: <48C6B1A1.1050504@stanford.edu> Are you thinking about the possibility of building a startup? Shahin Farshchi, an Associate from Lux Capital, will be moderating a Venture Clinic, which aims to provide an informal forum for researchers interested in brainstorming with a venture capitalist on avenues for commercializing technology, what to expect when starting a new venture. Technical discussions should be limited to what has been already disclosed or published. This will take place on Tuesday, Sept. 9 at 3 pm in CIS 101. For more information, contact: Shahin Farshchi, Ph.D. Phone: 925.323.2784 Email: shahin.farshchi at luxcapital.com -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From shott at stanford.edu Wed Sep 10 07:07:18 2008 From: shott at stanford.edu (John Shott) Date: Wed, 10 Sep 2008 07:07:18 -0700 Subject: Power outage tomorrow morning Message-ID: <48C7D496.7030809@stanford.edu> SNF Lab Members: As you may be aware, last Friday we experienced a period of process chilled water and compressed air failure that was caused by a failure of one of the electrical panels. We need to shutdown that panel and the one upstream of it so that the proper circuit breakers can be safely replaced. The power is scheduled to go off tomorrow (Thursday) morning at 8 a.m. and should be out for a maximum of 3 hours. We will begin to power down affected equipment at 6 a.m. This will likely affect about 25% of the equipment in the lab and will include: 1. The tools in the little characterization area off the gowning room. 2. The tools along the aisle closest to the gowning room (Rudolph ellipsometer and other characterization tools. 3. The tools along the aisle with wbgen and sts dep including ALD and metalica. 4. The tools along the aisle with ASM epi (including the ASM epi burnbox and scrubber) and stsetch2. 5. AG4100 and AG4108. 6. Innotec. 7. Hitachi Ebeam. We will also be checking whether this will affect any of the Raith or the sem4160. Note: This outage will also affect all of the equipment in CIS 152 .... the private test room where the Cascade probe station, the cryostation, and a lot of test and circuit work is done. Note: any tools with cryopumps (ebeam, innotec, metalica and maybe others) will need a full cryo regen before they are back in operation so those tools are likely to be down for the full day. Other tools will likely be operational in the early afternoon. We apologize for this inconvenience but really can't defer this repair for long. Let me know if you have any questions or concerns, John From mtang at stanford.edu Wed Sep 10 07:46:38 2008 From: mtang at stanford.edu (Mary Tang) Date: Wed, 10 Sep 2008 07:46:38 -0700 Subject: Reminder: CIS/X Building Summer BBQ! (Thursday, 9/11, CISX Patio) Message-ID: <48C7DDCE.70008@stanford.edu> Hi everyone! Just a reminder of the long overdue CIS/CISX building summer barbecue! Meet us in the CISX patio tomorrow (Thursday) from 11:30-1 for food, friends, and fun. Side dishes to share would be appreciated (but certainly not required.) Brought to you by our hosts, the CIS Affiliates program (thanks Richard and Marjorie!) -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at stanford.edu Wed Sep 10 11:25:21 2008 From: mtang at stanford.edu (Mary Tang) Date: Wed, 10 Sep 2008 11:25:21 -0700 Subject: Update on yesterday's lab evacuation Message-ID: <48C81111.4060602@stanford.edu> Dear Labmembers: As many of you may be aware, there was an an evacuation of the lab yesterday around 4:30 pm for a chlorine-like smell. Thankfully, everyone got out in an orderly fashion and there were no injuries. After about 30 minutes, the lab air had cleared sufficiently so that everyone was let back in. Incident Response Team members (John, Jim H, Maurice, Gary) determined that the smell was coming from the wbgen2 bench, near the tylan oxidation furnaces. Subsequent follow-up determined the following: 1. A labmember was decontaminating labware in the dump rinser. 2. The labmember was using 1:1 concentrated HCl to hydrogen peroxide (no water). 3. The exhaust on the system was at 0.5" (spec is that the bench should not be operated when 0.5" or below.) Normally, decontamination is done using a 5:1:1 ratio of water:HCl:H2O2 or 1:1:1, depending on the need. However, heat of mixing 38% HCl directly with H2O2 (without sufficient water) results a highly heated solution -- high enough that there was visible smoke coming from the dump rinser (remember: hydrogen chloride is a gas at room temperature). Now, the dump rinser, like most in the lab, is located slightly in front of the red line behind which exhaust is highest. During normal operation, the location is not a problem, since cassettes and wafers to be rinsed carry a limited amount of acid and there is sufficient exhaust to handle this. However, the dump rinse is clearly not exhausted well enough to accommodate a gas-generating reaction, particularly when the exhaust at this station was a hair below spec. We are determined that this type of incident should NOT happen again. To ensure this, we will be doing the following: 1. Tightening up our procedures for decontamination of labware and contaminated stations (to resolve any confusion over appropriate procedures.) 2. Better establishing the exhaust requirements for each bench (the current lower limit does not appear to have enough margin for accidents.) Each station will be audited and there will be procedural/equipment changes to prevent use with insufficient exhaust. 3. Ensuring that wet bench users are fully aware of these procedures. If you are a wet bench user, please be prepared for changes in coming weeks. Thanks for your attention. Your SNF Staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From nharjee at stanford.edu Wed Sep 10 15:11:49 2008 From: nharjee at stanford.edu (Nahid Harjee) Date: Wed, 10 Sep 2008 15:11:49 -0700 Subject: VM-651 to spare? Message-ID: <2feeb6700809101511i30d06223ra2ea7b04d46bdf5a@mail.gmail.com> Hi All, Does anyone have some VM-651 adhesion promoter for Polyimide PI-2611 that I could use? I need less than 1 mL. Thanks for your help, nh -- Nahid Harjee Ph.D. Candidate Electrical Engineering Stanford University 408-761-8651 -------------- next part -------------- An HTML attachment was scrubbed... URL: From shott at stanford.edu Thu Sep 11 11:49:08 2008 From: shott at stanford.edu (John Shott) Date: Thu, 11 Sep 2008 11:49:08 -0700 Subject: Power back on ..... Message-ID: <48C96824.2010402@stanford.edu> SNF Lab Members: Power has been restored following the replacement of one of the main 800A circuit breakers. As of 11:45 many of the affected tools are back on and their shutdowns have been cleared. There are a handful of tools that have cryopumps that will need a full regeneration that will take several hours .... that will include the ebeam, metalica, and innotec. A few of the other tools that need vacuum, including sts, ald, stsetch2, and matrix should be up shortly after lunch. Please contact me if you see tools other than these that have not yet been returned to service. Thank you for your continued support, John From mtang at stanford.edu Fri Sep 12 07:57:56 2008 From: mtang at stanford.edu (Mary Tang) Date: Fri, 12 Sep 2008 07:57:56 -0700 Subject: CIS BBQ Message-ID: <48CA8374.3010703@stanford.edu> Greetings everyone! We trust that those of you who were able to make it enjoyed yesterday's BBQ on the patio. I'd like us to take a moment to thank the CIS program (Dr. Dasher and Prof. Nishi) for generously hosting this event. And Maureen Baran, Marjorie Alfs, and Miho Nishi for making it all happen. It was a beautiful day -- and a nice break before students return! Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From raneeyoo at stanford.edu Tue Sep 16 10:42:18 2008 From: raneeyoo at stanford.edu (Kyeongran Yoo) Date: Tue, 16 Sep 2008 10:42:18 -0700 (PDT) Subject: thin SOI doped wafers Message-ID: <865955320.546561221586938945.JavaMail.root@zm06.stanford.edu> Hello! I am wondering if you know where I can buy thin SOI wafers. Here is my spec: Diameter: 100mm Si device layer: 150-200nm, doped BOX: around 400nm I contacted SOITEC and University wafers, but it seems they do not have such a stock. It would be great if you know some other vendors. Thank you very much and sorry for filling up your inbox. best, Kyeongran From mtang at stanford.edu Tue Sep 16 16:22:01 2008 From: mtang at stanford.edu (Mary Tang) Date: Tue, 16 Sep 2008 16:22:01 -0700 Subject: Labmembers' Meeting Friday, 9/19, CISX Auditorium Message-ID: <48D03F99.3080709@stanford.edu> Greetings labmembers -- Just a reminder that there's a Labmembers' Meeting this Friday, Sept. 19, at 11 am in the CISX Auditorium. On the agenda: - General announcements - Quality Circle updates - Annual rate increase for 2008-09 - EE410 Redesign project - Contamination policy update program - Tylanbpsg summary - Other project updates That and more. Everyone in the lab community is welcome. Your SNF Staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From kimsangb at stanford.edu Wed Sep 17 23:01:46 2008 From: kimsangb at stanford.edu (SangBum Kim) Date: Wed, 17 Sep 2008 23:01:46 -0700 Subject: SiON deposition at SNF Message-ID: <00ce01c91954$08224260$1866c720$@edu> Dear lab members, Is there a tool for SiON deposition at SNF? I am hoping to deposit 10-100nm thick SiON on top of LPCVD SiO2. Thanks, SangBum -------------- next part -------------- An HTML attachment was scrubbed... URL: From edmyers at stanford.edu Thu Sep 18 08:57:58 2008 From: edmyers at stanford.edu (Ed Myers) Date: Thu, 18 Sep 2008 08:57:58 -0700 Subject: JA Woollam Short Course Announcement Message-ID: <6.2.5.6.2.20080918085428.02666fe0@stanford.edu> Lab Members, If you want to strengthen your Spectral Ellipsometer skills, here is an excellent opportunity. Everyone I have talked with who have attended aJA Woollam training classes have given great reports on the lectures, contents and the hands on training. Regards, Ed >X-Sieve: CMU Sieve 2.3 >Delivered-To: edmyers at stanford.edu >Date: Wed, 17 Sep 2008 14:55:49 -0500 >To: Veronica Inlow >From: Veronica Inlow >Subject: New Short Course Announcement > > >Dear J.A. Woollam Co. Customers, > >This fall we are offering two new short courses. Both courses will >be taught at the Intermediate to Advanced Level and are intended for >customers with over two years of experience with WVASE32 software or >have already taken our Standard Short Course. > >The first course will be held November 17-18, 2008 at our facility >in Lincoln, Nebraska. It offers a refresher on the different >modeling approaches available in WVASE32. We will also teach when to >use the different models. The second course will he held November >20-21. It will cover how to measure anisotropic materials. Please >see the attached registration form for more details. Note, these >courses are not intended for users that work with other software >packages, such as CompleteEASE. > >If you would like to attend one or both courses, just fill out the >registration form and fax to me. The deadline to register is October >31, 2008. If you have any questions, please do not hesitate to contact me. > >Sincerely, > >Veronica Inlow > >******************************* >Veronica Inlow >Marketing Coordinator >J. A. Woollam Co., Inc. >645 M Street, Suite 102 >Lincoln, NE 68508 >vinlow at jawoollam.com >Phone: (402)477-7501 x101 >Fax: (402)477-8214 -------------- next part -------------- A non-text attachment was scrubbed... Name: SpecialTopicsShortCourseRegistration.pdf Type: application/pdf Size: 255311 bytes Desc: not available URL: From shott at stanford.edu Thu Sep 18 10:43:55 2008 From: shott at stanford.edu (John Shott) Date: Thu, 18 Sep 2008 10:43:55 -0700 Subject: About to release an updated version of Coral ..... Message-ID: <48D2935B.4030700@stanford.edu> An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: not available Type: image/jpeg Size: 11171 bytes Desc: not available URL: From lwchang at stanford.edu Thu Sep 18 12:30:01 2008 From: lwchang at stanford.edu (Li-Wen Chang) Date: Thu, 18 Sep 2008 12:30:01 -0700 Subject: missing lab notebook Message-ID: <8ab79e460809181230x69b246d4y6265fcb5f3e5d0f6@mail.gmail.com> Dear labmembers, My lab notebook has gone missing...I don't recall put it back to my bin yesterday. It's a 51/2"X81/2" notebook and has my name on the upper right corner. If you see it in the lab or accidently took it please let me know. Thank you very much, Li-Wen From mtang at stanford.edu Fri Sep 19 09:35:15 2008 From: mtang at stanford.edu (Mary Tang) Date: Fri, 19 Sep 2008 09:35:15 -0700 Subject: Reminder: Labmembers' Meeting Today, 9/19, 11 am, CISX Aud. Message-ID: <48D3D4C3.8020106@stanford.edu> Hi all -- Just a reminder of the Labmembers' meeting today, 11am, in the CISX auditorium. On the agenda -- - General announcements - Quality Circle updates - Annual rate increase for 2008-09 - EE410 Redesign project - Contamination policy update program - Tylanbpsg summary - Other project updates All this, and more. Everyone in the lab community is welcome. Your SNF Staff From englund at stanford.edu Fri Sep 19 14:55:45 2008 From: englund at stanford.edu (Dirk Englund) Date: Fri, 19 Sep 2008 14:55:45 -0700 Subject: OSA/SPIE Seminar: Steven Horne / SolFocus, Inc. - Wed. 9/24, 4pm, Ginzton AP 200 In-Reply-To: <4C74D3AB-225E-4223-A1B7-B4B65F2C9570@stanford.edu> References: <4C74D3AB-225E-4223-A1B7-B4B65F2C9570@stanford.edu> Message-ID: <2269E106-6C4F-4AC6-90B0-4E89E3B47991@stanford.edu> The Optical Society of America/SPIE Stanford Student Chapter, and the Stanford Photonics Research Center present: "Building the next-generation concentrating photovoltaics technologies for large-scale electricity generation" Speaker: Steven Horne, SolFocus Inc. Wednesday, September 24, 2008 4:15pm, Ginzton building, AP 200 Refreshments at 4:00pm Abstract: Concentration Photovoltaics (CPV) is a new and interesting approach to solar electricity generation, and promises very low cost. Long a lab and startup company phenomenon, CPV is finally emerging as a viable industry, with the first significant field installations being installed this year. SolFocus has just completed its first half megawatt field in Spain, and is committing to build a high volume manufacturing facility over the next twelve months. This talk presents an overview of the field, and covers the thought process that led to the SF-1000, SolFocus? first product. About our Speaker: Steve Horne is cofounder and CTO of SolFocus inc, a product manufacturer in the Concentration Photovoltaic (CPV) field. Steve started his engineering career commissioning large coal burning powerplant in Australia before migrating to Silicon Valley and the world of microelectronics and precision mechanics. He is now atoning for his early sins in the renewable energy world. -------------- next part -------------- A non-text attachment was scrubbed... Name: Horne_2008_09_24.pdf Type: application/pdf Size: 261081 bytes Desc: not available URL: From mtang at stanford.edu Mon Sep 22 07:39:56 2008 From: mtang at stanford.edu (Mary Tang) Date: Mon, 22 Sep 2008 07:39:56 -0700 Subject: Process Clinic: Today (Mon) 2-4 pm, cubicle area Message-ID: <48D7AE3C.3020807@stanford.edu> Hi all -- Just a reminder there's a Process Clinic today, Monday, from 2-4 pm. We meet in the cubicle area outside of Maureen's office. Bring your process flows, device layouts and Special Materials requests -- staff and lab members will be on hand to help brainstorm. Your SNF Staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From arguicha at stanford.edu Mon Sep 22 11:42:11 2008 From: arguicha at stanford.edu (Alex Guichard) Date: Mon, 22 Sep 2008 11:42:11 -0700 Subject: stable recipe for Schottky contacts on n-type Si? Message-ID: <1DCA821A-6A54-43C0-8AA0-8A7C6B19168D@stanford.edu> Hello all: Does anyone have a good, repeatable recipe for making Schottky contacts to n-type Si? I have been using shadow-masking to pattern Cr and Al contacts on n-type SOI, and the dark I-V characteristics of my diodes change with time (as does the photoresponse). A lot of the literature suggests using Al, but with a work function about equal to the conduction band level of Si, that seems like a bad choice, and the diodes I have made with Al look unsurprisingly ohmic and highly variable from diode to diode (anywhere from nA to ?A of dark current at 1V). Am I just that bad at microfabbing? :-) Any suggestions people have for any deposition and annealing steps would be greatly appreciated. Thanks in advance for your help! Sincerely, Alex From filip at stanford.edu Mon Sep 22 13:15:22 2008 From: filip at stanford.edu (Filip Crnogorac) Date: Mon, 22 Sep 2008 13:15:22 -0700 (PDT) Subject: SAM (Scanning Acoustic Microscope) Message-ID: <1413744158.507131222114522367.JavaMail.root@zm09.stanford.edu> Hi labmembers, I'm looking for someone (institution or company) that has SAM (Scanning Acoustic Microscope), in order to image voids and defects in bonded wafer pairs. Please let me know if you have experience, or contacts relating to SAMs. Ironically, the technique was developed at Stanford, yet there are none on campus (as far as I know). Cheers, Filip -------------------------------------- Ph.D. Candidate, Stanford University Department of Electrical Engineering Center for Integrated Systems B-103, 420 Via Palou Stanford, CA 94305 From xzhuang at stanford.edu Mon Sep 22 15:15:21 2008 From: xzhuang at stanford.edu (Steve Zhuang) Date: Mon, 22 Sep 2008 15:15:21 -0700 (PDT) Subject: missing wafers In-Reply-To: <389392847.1888521222120870706.JavaMail.root@zm02.stanford.edu> Message-ID: <405077400.1892061222121721166.JavaMail.root@zm02.stanford.edu> Dear labmembers, Sorry for bothering. I am looking for a wafer box which contains 15 SOI wafers. I brought it to the clean room last Thursday evening. I checked around the lab today and couldn't locate it. It is vacuum packaged in a clear plastic bag. If you happen to see such a wafer box please let me know. Thanks! Steve From mtang at stanford.edu Mon Sep 22 15:53:20 2008 From: mtang at stanford.edu (Mary Tang) Date: Mon, 22 Sep 2008 15:53:20 -0700 Subject: DI Water Shutdown, Wed. AM Message-ID: <48D821E0.4020003@stanford.edu> Dear Labmembers -- The DI water pump which supplies our lab will be replaced on Wednesday morning, starting at 7 am and should be done by noon, if not before then. During this time, DI water will unavailable. This affects the following stations: Wet stations: wbdiff, wbsilicide, wbnonmetal, wbnitride, wbgeneral, wbgen2, wbmiscres, wbgaas, wbmetal Other stations: svgdev, svgdev2, kscoat, wafersaw, cmp These tools have been reserved for this time and will be unavailable. Please plan your processing around this shutdown. We apologize for the inconvenience - but this should give us a more reliable and serviceable DI supply. Thanks for your attention -- You SNF Staff From mtang at stanford.edu Tue Sep 23 09:58:22 2008 From: mtang at stanford.edu (Mary Tang) Date: Tue, 23 Sep 2008 09:58:22 -0700 Subject: Cleanliness and Contamination Policy Meeting, Thursday, 9/25, 3 pm Message-ID: <48D9202E.2020607@stanford.edu> Greetings Labmembers -- As many of you may be aware (some, very keenly aware!), the SNF AdCom met two weeks ago to discuss our cleanliness and contamination policy at SNF. The AdCom, or Advisory Committee, consists faculty and industrial PI's whose research groups generate the most activity in the lab. In short, the request was for a system that would allow for more flexibility in processing, but without risking basic device functionality, process stability, and most importantly, safety. Please be assured that NO decisions on policy change have been made. The objective is to establish the rationale for the cleanliness policy, concerns for contamination, and process requirements which may routinely fall outside the routine definitions. Everyone is aware that even small changes to our system can have lasting ramifications. However, it is clear that the current system does not meet the needs of most of our labmembers. Following on the AdCom's directive, there will be a Labmembers' meeting where a summary of the discussion will be presented and inputs from the lab community invited; from this, we plan to set the stage for a working group on contamination policy. This Labmembers' meeting will take place this Thursday, Sept. 25, at 3 pm in the CISX Auditorium. Your SNF Staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From wanki at stanford.edu Tue Sep 23 16:45:48 2008 From: wanki at stanford.edu (Wanki Kim) Date: Tue, 23 Sep 2008 16:45:48 -0700 Subject: IrO2 Etching Message-ID: Hi all, I am trying to make an electrode using Iridium oxide (IrO2). Could anyone please tell me the dry etching method of IrO2 ? I would appreciate it if you give me some tips on the dry etching. Thanks. Best, Wanki -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Wed Sep 24 07:10:10 2008 From: mtang at stanford.edu (Mary Tang) Date: Wed, 24 Sep 2008 07:10:10 -0700 Subject: DI water upgrade - not today -- now Friday Message-ID: <48DA4A42.2040000@stanford.edu> Dear Labmembers -- Many apologies... The DI water system upgrade is now scheduled for this Friday. Again, this will be from 7 am to noon. Systems in the lab are OK to use this morning. Your SNF staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at stanford.edu Wed Sep 24 07:44:21 2008 From: mtang at stanford.edu (Mary Tang) Date: Wed, 24 Sep 2008 07:44:21 -0700 Subject: DI Water shutdown - ON again, for today Message-ID: <48DA5245.8070902@stanford.edu> Dear labmembers -- We're back on for this morning's DI water shutdown after all. (Realizing this doesn't inspire a lot of confidence in Stanford's planning ability, we ask that you please bear with us -- the problem seems to have been miscommunication at levels outside of SNF.) The target for turn-on is still noon, but as the vendor is getting a late start, there may be a delay. Please watch for a labmembers announcement. Your SNF Staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From englund at stanford.edu Wed Sep 24 09:19:11 2008 From: englund at stanford.edu (Dirk Englund) Date: Wed, 24 Sep 2008 09:19:11 -0700 Subject: Today: OSA/SPIE Seminar: Steven Horne / SolFocus, Inc. - Wed. 9/24, 4pm, Ginzton AP 200 References: <2269E106-6C4F-4AC6-90B0-4E89E3B47991@stanford.edu> Message-ID: A quick reminder: The Optical Society of America/SPIE Stanford Student Chapter, and the Stanford Photonics Research Center present: "Building the next-generation concentrating photovoltaics technologies for large-scale electricity generation" Speaker: Steven Horne, SolFocus Inc. Today 4:15pm, Ginzton/Applied Physics Building, AP 200 Refreshments at 4:00pm Abstract: Concentration Photovoltaics (CPV) is a new and interesting approach to solar electricity generation, and promises very low cost. Long a lab and startup company phenomenon, CPV is finally emerging as a viable industry, with the first significant field installations being installed this year. SolFocus has just completed its first half megawatt field in Spain, and is committing to build a high volume manufacturing facility over the next twelve months. This talk presents an overview of the field, and covers the thought process that led to the SF-1000, SolFocus? first product. About our Speaker: Steve Horne is cofounder and CTO of SolFocus inc, a product manufacturer in the Concentration Photovoltaic (CPV) field. Steve started his engineering career commissioning large coal burning powerplant in Australia before migrating to Silicon Valley and the world of microelectronics and precision mechanics. He is now atoning for his early sins in the renewable energy world. Dirk Englund Postdoctoral Researcher in Electrical Engineering Stanford University cvitae.org/englund/ -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Horne_2008_09_24.pdf Type: application/pdf Size: 261081 bytes Desc: not available URL: -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Horne_2008_09_24.pdf Type: application/pdf Size: 261081 bytes Desc: not available URL: -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Wed Sep 24 14:44:23 2008 From: mtang at stanford.edu (Mary Tang) Date: Wed, 24 Sep 2008 14:44:23 -0700 Subject: DI Water back on!!! Message-ID: <48DAB4B7.3050406@stanford.edu> Thanks for your patience -- DI water is now available to the lab. Your SNF staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From sangwon at stanford.edu Wed Sep 24 16:54:23 2008 From: sangwon at stanford.edu (Sang Won Lee) Date: Wed, 24 Sep 2008 16:54:23 -0700 (PDT) Subject: Hydrogen Etching In-Reply-To: <1624127829.1643311222300268947.JavaMail.root@zm03.stanford.edu> Message-ID: <640509766.1644091222300463047.JavaMail.root@zm03.stanford.edu> Hi all, Does anyone have the experience of Hydrogen Etching to produce atomically flat surfaces? Actually, I have SiC with scratches which needs Hydrogen Etching based on the papers. If you give advice about the procesure and the location of the equipment, I will appreciate it. Thanks in advance. Best, Sangwon From mtang at stanford.edu Thu Sep 25 13:45:20 2008 From: mtang at stanford.edu (Mary Tang) Date: Thu, 25 Sep 2008 13:45:20 -0700 Subject: Reminder: Cleanliness & Contamination Meeting, Thursday, 9/25, 3 pm Message-ID: <48DBF860.50809@stanford.edu> Hi all -- Just a reminder. For details: http://snf.stanford.edu/cgi-bin/ezmlm-cgi?mss:3413:200809:phkllicgjinehokifeok Your SNF Staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From shinbh93 at stanford.edu Mon Sep 29 12:00:05 2008 From: shinbh93 at stanford.edu (Byungha Shin) Date: Mon, 29 Sep 2008 12:00:05 -0700 Subject: damage of Al2O3 by photoresist stripper? Message-ID: Hi all, Does anyone know if the photoresist stripper Microposit 1165 attacks Al2O3? Thanks, Byungha -------------- next part -------------- An HTML attachment was scrubbed... URL: From edmyers at stanford.edu Mon Sep 29 12:16:34 2008 From: edmyers at stanford.edu (Ed Myers) Date: Mon, 29 Sep 2008 12:16:34 -0700 Subject: Veeco AFM seminar Message-ID: <6.2.5.6.2.20080929121441.02fa12d0@stanford.edu> All, Mayur Savla the Veeco Bay Area AFM Applications Engineer, will hold a seminar on: Wednesday, October 8 at 2:30 to 3:15 PM Allen Center for Integrated Systems CIS-X Cypress Auditorium (CISX101). He will discuss the best practices and set-up tips for optimizing scan parameters for surface roughness and step height measurements, Force curve measurements, Phase imaging, Fluid imaging and Electrical Measurements using AFM. Registration is required if you want to win the free sample pack of AFM tips. See the flyer for instructions. If you have any questions, please feel free to contact me or Paul Charell at pcharell at veeco.com. Regards, Ed -------------- next part -------------- A non-text attachment was scrubbed... Name: Veeco AFM Seminar.doc Type: application/msword Size: 28160 bytes Desc: not available URL: From jameson at stanford.edu Mon Sep 29 15:47:07 2008 From: jameson at stanford.edu (John Ross Jameson) Date: Mon, 29 Sep 2008 15:47:07 -0700 (PDT) Subject: Ti etch at wbmetal Message-ID: Hi, Does anyone know the etch rate of Ti in the 5:1:1 H2O:H2O2:NH4OH bath at wbmetal? Also, what's the selectivity to photoresist (3612) and Si? If there's an easier wet etch to use, that info would be helpful, too. Thank you, John