From dgunning at physics.gla.ac.uk Sat Aug 1 15:43:31 2009 From: dgunning at physics.gla.ac.uk (dgunning at physics.gla.ac.uk) Date: Sat, 1 Aug 2009 23:43:31 +0100 (BST) Subject: missing wafers! Message-ID: <50667.171.66.33.109.1249166611.squirrel@www.physics.gla.ac.uk> Dear labmembers, During the last week, I have misplaced/lost a 4" cassette with 7 wafers in it. It would have been labelled "Debbie - dgunning" and perhaps "bed-of-nails". I left it next to the YES oven (since it wouldn't fit in or on top of my storage box). If anyone has seen it, please let me know as soon as possible. Thanks, Debbie From cmcg at snf.stanford.edu Mon Aug 3 11:04:41 2009 From: cmcg at snf.stanford.edu (Christopher McGuinness) Date: Mon, 3 Aug 2009 11:04:41 -0700 Subject: wafer bonding/fusion Message-ID: <393d7fe80908031104x7fe57ac0k1c6926bffc551606@mail.gmail.com> Hi all, I am interested in bonding two Si wafers (coated with several microns of oxide, embedded with small features of silicon) with high alignment accuracy. Does anyone have experience with this? I assume the evbond would be suited for this, but the wiki only describes bonding between Si and glass. I assume a post bond anneal would improve the bond b/w silicon features. EVG website specs 2um (3sigma) alignment tolerances for backside alignment on the EVG620 aligner. Is this level of precision important for others and has anybody actually observed the tool performing to these specs? Thanks, Chris -------------- next part -------------- An HTML attachment was scrubbed... URL: From aeonia at gmail.com Mon Aug 3 15:55:51 2009 From: aeonia at gmail.com (Hyeun-Su Kim) Date: Mon, 3 Aug 2009 15:55:51 -0700 Subject: Nitride paterning with wet etch? Message-ID: Dear Lab users, I have one quick question (hopefully for a quick answer too) about SiN patterning using hot phosphoric acid. As far as I know hot phosphoric acid is for stripping SiN, but if possible, I like to use it to pattern nitride so that I can have good isotropic etch profile. Is it possible to pattern SiN in hot phosphoric acid with SiO2 or some other kind of mask? If you have experiences, please share it. Thank you. -- ---------------------------------------------- Hyeun-Su Kim Mechanical Systems Engineer Kateeva, Inc. (formerly TJet Tech.) 1430 O'Brien Dr. Suite A Menlo Park, CA 94025 800-385-7802 x111 ---------------------------------------------- -------------- next part -------------- An HTML attachment was scrubbed... URL: From goldthorpe at stanford.edu Wed Aug 5 12:32:39 2009 From: goldthorpe at stanford.edu (Irene Goldthorpe) Date: Wed, 5 Aug 2009 12:32:39 -0700 (PDT) Subject: PhD Defense: Irene Goldthorpe Message-ID: <753925890.14358921249500759041.JavaMail.root@zm03.stanford.edu> SYNTHESIS AND CHARACTERIZATION OF GERMANIUM NANOWIRES AND GERMANIUM/SILICON RADIALLY HETEROSTRUCTURED NANOWIRES Irene Goldthorpe Department of Materials Science and Engineering Advisor: Prof. Paul McIntyre Thursday, August 13th, 10:00 am (refreshments at 9:45 am) Location: McCullough 115 ABSTRACT: Because semiconductor nanowires possess a variety of technologically useful properties and can be synthesized with relative ease, they are attractive candidates for a wide range of electronic, optical, sensing, and energy applications. The first part of this talk will focus on germanium nanowires, because of germanium?s compatibility with standard integrated circuit fabrication processes, its high electron and hole mobilities, and the low temperature required for germanium nanowire growth. The chemical vapor deposition of epitaxially-aligned germanium nanowires with uniform diameters between 5 and 50 nm will be discussed. Next, I will demonstrate the synthesis of a radial heterostructure, where silicon is heteroepitaxially deposited around a germanium nanowire. This silicon shell passivates the germanium nanowire surface, creates an electronic band offset to confine holes away the surface where they can scatter or recombine, and induces strain which could allow for the engineering of properties such as carrier mobilities and band gap. Detailed transmission electron microscopy and x-ray diffraction characterization of various Ge-core/Si-shell nanowire samples show that, analogous to planar heteroepitaxy, surface roughening and misfit dislocations relax misfit strain. Lessons learned generated strategies to avoid the strain-induced surface roughening that promotes dislocation nucleation, resulting in the fabrication of metastably strained, dislocation-free core-shell nanowires. From shott at stanford.edu Fri Aug 7 14:29:46 2009 From: shott at stanford.edu (John Shott) Date: Fri, 07 Aug 2009 14:29:46 -0700 Subject: Updated Java Runtime Environment for Remote Coral on Windows .... Message-ID: <4A7C9CCA.7040400@stanford.edu> An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: JavaCacheViewer.png Type: image/png Size: 55462 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: JavaControlPanel.png Type: image/png Size: 18000 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: TrustedCertificates.png Type: image/png Size: 37051 bytes Desc: not available URL: From svo at stanford.edu Mon Aug 10 00:08:10 2009 From: svo at stanford.edu (sonny vo) Date: Mon, 10 Aug 2009 00:08:10 -0700 Subject: si deposition question Message-ID: <000101ca1989$51831700$f4894500$@edu> Hi all, I have two short questions. I am trying to deposit 80nm si on Au. 1. When depositing si in innotec, what's the ballpark power that it will evaporate (the log book doesn't have much si deposition) 2. What recipe have you tried for si removal. According to the snf website, drytek1 will do the job.. I tried 80nm sio2 using sts but I get grainy clusters. My goal is to get 80nm of si or sio2 or SiNx , on Au with relatively okay uniformity and be able to remove this successfully. Thank you! Best Regards, Sonny __________________________________________________ "What makes the desert beautiful," said the Little Prince ,"is that somewhere it hides a well ." _.--. _ ;,- `' ( ,,, ( E#=====#############=: ] :_"' ,._( ``` `--' rock on Sonny Vo Department of Applied Physics, Stanford University (626) 202-8379 Harris Research Group: http://snow.stanford.edu/index.html -------------- next part -------------- An HTML attachment was scrubbed... URL: From jonschuller at yahoo.com Mon Aug 10 15:26:40 2009 From: jonschuller at yahoo.com (jon schuller) Date: Mon, 10 Aug 2009 15:26:40 -0700 (PDT) Subject: University PhD Dissertation Defense for Jonathan A. Schuller Message-ID: <154398.3521.qm@web51410.mail.re2.yahoo.com> Department of Applied Physics University PhD Dissertation Defense Dielectric Optical Antenna Emitters and Metamaterials Jonathan Aaron Schuller Research Advisor: Professor Mark Brongersma 17 August 2009 @ 2:00 p.m. in Allen Building (formerly CIS-X), Room 101 Abstract Optical antennas are critical components in nanophotonics research due to their unparalleled ability to concentrate electromagnetic energy into nanoscale volumes. Researchers typically construct such antennas from wavelength-size metallic structures. However, recent research has begun to exploit the scattering resonances of high-permittivity particles to realize all-dielectric optical antennas, emitters, and metamaterials. In this talk, we experimentally and theoretically characterize the resonant modes of subwavelength rod-shaped dielectric particles and demonstrate their use in negative index metamaterials and novel infrared light emitters. At mid-infrared frequencies, Silicon Carbide (SiC) is an ideal system for studying the behavior of dielectric optical antennas. At frequencies below the TO phonon resonance, SiC behaves like a dielectric with very large refractive index. Using infrared spectroscopy and analytical Mie calculations we show that individual rod-shaped SiC particles exhibit a multitude of resonant modes. Detailed investigations of these SiC optical antennas reveal a wealth of new physics and applications. We discuss the distinct electromagnetic field profile for each mode, and demonstrate that two of the dielectric-type Mie resonances can be combined in a particle array to form a negative index metamaterial. We further show that these particles can serve as "broadcasting" antennas. Using a custom-built thermal emission microscope we collect emissivity spectra from single SiC particles at elevated temperatures, highlighting their use as subwavelength resonant light emitters. Finally, we derive and verify a variety of general analytical results applicable to all cylindrical dielectric antennas and discuss extensions of the demonstrated concepts to different materials systems and frequency regimes. From rissman at stanford.edu Tue Aug 11 11:51:44 2009 From: rissman at stanford.edu (Paul Rissman) Date: Tue, 11 Aug 2009 11:51:44 -0700 Subject: Molecular Foundry Presentation Message-ID: <20090811185146.4255577927@smtp-roam.stanford.edu> Leonce Gaiter from the Lawrence Berkeley National Laboratory will be here to talk about opportunities for SNF users to access the Molecular Foundry for their work: Tuesday, August 18th noon Allen (formerly) CIS 101 (The Linville Room) Here is an abstract of the talk: This presentation will provide an overview of The Molecular Foundry and the user program through which it provides researchers from academia, industry and government no-cost access to expert scientific personnel, and state-of-the-art instrumentation and techniques for the advancement of nanoscale materials research. The Foundry is an especially valuable resource for users pursuing multidisciplinary research in the fields of biology, energy, engineering and physics. Researchers can access six in-house user facilities for the investigation of biological, organic, inorganic and microfabricated nanoscale building blocks and their integration into complex functional assemblies. The Foundry provides unique capabilities in nanoimaging and spectroscopy, nanointerfaces, nanofabrication and combinatorial nanoscience. Projects are considered in three basic categories that include options for sample-only and instrument-only collaborations in addition to fully supported standard programs. The Foundry conducts three announced call for proposals cycles per calendar year. From goldthorpe at stanford.edu Tue Aug 11 15:11:55 2009 From: goldthorpe at stanford.edu (Irene Goldthorpe) Date: Tue, 11 Aug 2009 15:11:55 -0700 (PDT) Subject: Reminder: PhD defense - Irene Goldthorpe Message-ID: <494333257.97561250028715873.JavaMail.root@zm03.stanford.edu> SYNTHESIS AND CHARACTERIZATION OF GERMANIUM NANOWIRES AND GERMANIUM/SILICON RADIALLY HETEROSTRUCTURED NANOWIRES Irene Goldthorpe Department of Materials Science and Engineering Advisor: Prof. Paul McIntyre Thursday, August 13th, 10:00 am (refreshments at 9:45 am) Location: McCullough 115 ABSTRACT: Because semiconductor nanowires possess a variety of technologically useful properties and can be synthesized with relative ease, they are attractive candidates for a wide range of electronic, optical, sensing, and energy applications. The first part of this talk will focus on germanium nanowires, because of germanium?s compatibility with standard integrated circuit fabrication processes, its high electron and hole mobilities, and the low temperature required for germanium nanowire growth. The chemical vapor deposition of epitaxially-aligned germanium nanowires with uniform diameters between 5 and 50 nm will be discussed. Next, I will demonstrate the synthesis of a radial heterostructure, where silicon is heteroepitaxially deposited around a germanium nanowire. This silicon shell passivates the germanium nanowire surface, creates an electronic band offset to confine holes away the surface where they can scatter or recombine, and induces strain which could allow for the engineering of properties such as carrier mobilities and band gap. Detailed transmission electron microscopy and x-ray diffraction characterization of various Ge-core/Si-shell nanowire samples show that, analogous to planar heteroepitaxy, surface roughening and misfit dislocations relax misfit strain. Lessons learned generated strategies to avoid the strain-induced surface roughening that promotes dislocation nucleation, resulting in the fabrication of metastably strained, dislocation-free core-shell nanowires. From andreas_goebel at sbcglobal.net Tue Aug 11 15:38:07 2009 From: andreas_goebel at sbcglobal.net (Andreas Goebel) Date: Tue, 11 Aug 2009 15:38:07 -0700 Subject: Reminder: PhD defense - Irene Goldthorpe In-Reply-To: <494333257.97561250028715873.JavaMail.root@zm03.stanford.edu> References: <494333257.97561250028715873.JavaMail.root@zm03.stanford.edu> Message-ID: Mani, I was going to pick up my nephew at the airport, but just got a VM saying they are stuck for the night in Toronto. So not yet sure what is going on. I might swing by the gym and perhaps even climb. When are you going to be there? Andreas On Aug 11, 2009, at 3:11 PM, Irene Goldthorpe wrote: > SYNTHESIS AND CHARACTERIZATION OF GERMANIUM NANOWIRES AND GERMANIUM/ > SILICON RADIALLY HETEROSTRUCTURED NANOWIRES > > Irene Goldthorpe > Department of Materials Science and Engineering > Advisor: Prof. Paul McIntyre > > Thursday, August 13th, 10:00 am (refreshments at 9:45 am) > Location: McCullough 115 > > ABSTRACT: > > Because semiconductor nanowires possess a variety of technologically > useful properties and can be synthesized with relative ease, they > are attractive candidates for a wide range of electronic, optical, > sensing, and energy applications. The first part of this talk will > focus on germanium nanowires, because of germanium?s compatibility > with standard integrated circuit fabrication processes, its high > electron and hole mobilities, and the low temperature required for > germanium nanowire growth. The chemical vapor deposition of > epitaxially-aligned germanium nanowires with uniform diameters > between 5 and 50 nm will be discussed. Next, I will demonstrate the > synthesis of a radial heterostructure, where silicon is > heteroepitaxially deposited around a germanium nanowire. This > silicon shell passivates the germanium nanowire surface, creates an > electronic band offset to confine holes away the surface where they > can scatter or recombine, and induces strain which could allow for > the engineering of properties such as carrier mobilities and band > gap. Detailed transmission electron microscopy and x-ray > diffraction characterization of various Ge-core/Si-shell nanowire > samples show that, analogous to planar heteroepitaxy, surface > roughening and misfit dislocations relax misfit strain. Lessons > learned generated strategies to avoid the strain-induced surface > roughening that promotes dislocation nucleation, resulting in the > fabrication of metastably strained, dislocation-free core-shell > nanowires. --- Andreas Goebel cell 408-464-2790 From kattsai at stanford.edu Wed Aug 12 12:27:51 2009 From: kattsai at stanford.edu (Katherine Tsai) Date: Wed, 12 Aug 2009 12:27:51 -0700 Subject: Does anyone have SU8-2075? Message-ID: <1c62e49d0908121227pd919c85h68a29dd6afa4df09@mail.gmail.com> Does anyone have any SU8-2075 that I can borrow? I just need enough for 2-3 wafers. I'm ordering a new bottle and can replace whatever amount I use when it arrives, but that won't be for another week or so. Thanks, Kat -------------- next part -------------- An HTML attachment was scrubbed... URL: From huin at altadevices.com Wed Aug 12 12:28:18 2009 From: huin at altadevices.com (Hui Nie) Date: Wed, 12 Aug 2009 12:28:18 -0700 Subject: DLTS and Hall measurement In-Reply-To: <20090811185146.4255577927@smtp-roam.stanford.edu> References: <20090811185146.4255577927@smtp-roam.stanford.edu> Message-ID: Hi All, Do you know SNF has DLTS and Hall measurement tool? If not, is there any local lab for DLTS and hall measurement service? Thanks, Hui This e-mail message and attachments from Alta Devices, Inc is for the sole use of the intended recipient(s). It may contain privileged or confidential information. If you are not an intended recipient, or a person authorized to receive this e-mail for an intended recipient, notify the sender immediately by reply e-mail and delete this message and any attachments. Any unauthorized dissemination or use of this message or any of its contents is strictly prohibited. From currentsci at aol.com Wed Aug 12 14:00:35 2009 From: currentsci at aol.com (Michael Current) Date: Wed, 12 Aug 2009 17:00:35 -0400 Subject: DLTS and Hall measurement In-Reply-To: References: <20090811185146.4255577927@smtp-roam.stanford.edu> Message-ID: <8CBE9A7125D2E54-724-1917@webmail-da04.sysops.aol.com> Hello Hui, He is not really "local", but the resident Hall mobility profile measurement person in CA is Si Prussin, an adjunct prof at UCLA.?? See attached IIT08 paper.?? You can email him at pru at ee.ucla.edu. And very much not local, but very interesting is the work by the folks in and near Copenhagen, at DTU and CAPRES, see attached papers.?? You can contact Dirch Petersen at? dhpe at nanotech.dtu.dk.? I do not know any active DLTSers. these folks should be able to help and guide you. Good luck. Michael Current 1729 Comstock Way, San Jose, CA 95124 tel; 408-265-6192 -----Original Message----- From: Hui Nie To: labmembers at snf.stanford.edu Sent: Wed, Aug 12, 2009 12:28 pm Subject: DLTS and Hall measurement Hi All, Do you know SNF has DLTS and Hall measurement tool? If not, is there any local lab for DLTS and hall measurement service? Thanks, Hui This e-mail message and attachments from Alta Devices, Inc is for the sole use of the intended recipient(s). It may contain privileged or confidential information. If you are not an intended recipient, or a person authorized to receive this e-mail for an intended recipient, notify the sender immediately by reply e-mail and delete this message and any attachments. Any unauthorized dissemination or use of this message or any of its contents is strictly prohibited. -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: SiPrussinUCLA Hall IIT08.pdf Type: application/pdf Size: 401486 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Petersen_Micro_Hall_effect.pdf Type: application/pdf Size: 575669 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: DHPetersen_-_Insight_2009_-_M4PP_review_final.pdf Type: application/pdf Size: 999245 bytes Desc: not available URL: From mbaran at stanford.edu Thu Aug 13 15:21:51 2009 From: mbaran at stanford.edu (Maureen Baran) Date: Thu, 13 Aug 2009 15:21:51 -0700 Subject: 2009-10 Department Sponsorship Apps Available Message-ID: <002001ca1c64$7481ee60$5d85cb20$@edu> Dear Lab Members, The new 2009-10 Department Sponsorship application is available now. You can either come over to my cubicle (#41) located on the first floor of the Paul G. Allen building and pick one up from the hanging folder outside my cubicle or print the attached application. This form must be renewed annually and submitted to Parking and Transportation by September 1st 2009 along with a completed 2009-10 Parking Permit Application in order to purchase your new Parking Permit. Maureen Maureen Baran Stanford Nanofabrication Facility Lab Services Administrator mbaran at stanford.edu 650-725-3664 -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: 2009-10 Department Sponsorship Application.pdf Type: application/pdf Size: 239195 bytes Desc: not available URL: From narii at stanford.edu Fri Aug 14 14:36:49 2009 From: narii at stanford.edu (Yeul Na) Date: Fri, 14 Aug 2009 14:36:49 -0700 Subject: Looking for missing reticle Message-ID: <2521dac50908141436s44f3e7e3g5b131c84ffee738b@mail.gmail.com> Hi all, I've lost my ASML recticle. The reticle's name is 'RMG' and is in red COMPUGRAPHIC case. If you happened to see this reticle, please notice me. Thanks in advance, Yeul -------------- next part -------------- An HTML attachment was scrubbed... URL: From rowlette at stanford.edu Sun Aug 16 10:49:55 2009 From: rowlette at stanford.edu (Jeremy Alexander Rowlette) Date: Sun, 16 Aug 2009 10:49:55 -0700 (PDT) Subject: PhD dissertation defense: Jeremy A. Rowlette In-Reply-To: <1219724252.775961250444853113.JavaMail.root@zm01.stanford.edu> Message-ID: <1456265719.776081250444995813.JavaMail.root@zm01.stanford.edu> Department of Electrical Engineering University PhD Dissertation Defense Energy Conversion and Transport in Silicon Nanostructures Jeremy A. Rowlette Research Advisor: Professor Ken Goodson Thursday August 20, 2009 @ 1:00 p.m. (Refreshments at 12:45 p.m.) Paul Allen Building (formerly CIS-X), Auditorium Abstract We examine fundamental energy conversion and transport processes in silicon nanostructures which are relevant to the operation of emerging silicon-based nanoelectronic and nanophotonic devices. The theoretical and experimental work presented here will facilitate the design of improved nanodevices ranging from compact transistors, to quantum dot-based optical sources, detectors, and modulators. In the first half of the talk, we discuss electron-phonon and phonon-phonon energy conversion within nanoscale silicon transistors under conditions of strong departure from thermal equilibrium. As ?hot? electron relaxation tends to favor optical phonon (OP) emission, the conversion from OPs to the acoustic phonons (APs) responsible for heat conduction can yield an energy conversion bottleneck in the drain leading to reduced drive currents and even negative differential conductance effects [1]. We determine the conditions necessary for reaching this critical state in silicon-based nanodevices by developing self-consistent Monte Carlo device simulations which fully couple the electron and phonon systems while accurately accounting for electron and phonon energy dispersion [2]. To assist these calculations, we use third-order anharmonic perturbation theory to compute the two-phonon final-states spectrum and lifetime for selected longitudinal OPs, which have high occupancies during transistor switching. In the second half of the talk, we discuss photon-electron and electron-electron energy conversion within dense (~10^18 cm^-3) systems of small (~5 nm) luminescent silicon nanocrystals (NCs) embedded in amorphous dielectric films, a family of materials which includes annealed silicon rich oxides and nitrides (SRO, SRN), as well as porous silicon (PS). These materials exhibit stable, room-temperature visible and near-infrared luminescence as well as the ability to sensitize codoped Er3+ ions and are therefore promising for the development of inexpensive, CMOS-compatible short-range optical sources. Despite their promise, it has been shown that fast (< ns) nonradiative carrier recombination (NRCR), coupled with long (> ?s) photoluminescence lifetimes, severely limit the prospects for achieving practical levels of optical gain. We characterize these NRCR and associated energy conversion processes by measuring the excited carrier dynamics of optically pumped NCs using a custom-built, two-color picosecond pump-probe measurement system. The unique dependence of the excited carrier losses vs. pump-probe delay and vs. pump intensity reveals enhanced NRCR at high NC occupancies, which we determine to be caused by long?range Coulombic dipole-dipole (d-d) interaction and energy transfer between excited NCs [3]. Finally, we derive the scaling of the effective d-d interaction strength of the NC ensemble in low-dimensional systems and present recent experimental results on quasi-2D SRO films which further supports the interacting d-d model. Monte Carlo analysis is used to provide additional insight into the spatially distributed d-d energy conversion in selected low-dimensional systems. [1] E. Pop, D. Mann, J. Cao, Q. Wang, K. Goodson, H. Dai. Phys. Rev. Lett. 95 155505 (2005) [2] J. Rowlette and K. Goodson. IEEE Trans. Elect. Dev. 55 220 (2008) [3] J. Rowlette, R. Kekatpure, M. Panzer, M. Brongersma, K. Goodson. Phys. Rev. B 80 045314 (2009) -------------- next part -------------- A non-text attachment was scrubbed... Name: Rowlette_PhD_Defense_Abstract_Aug20_2009.pdf Type: application/pdf Size: 81427 bytes Desc: not available URL: From jonschuller at yahoo.com Mon Aug 17 07:22:46 2009 From: jonschuller at yahoo.com (jon schuller) Date: Mon, 17 Aug 2009 07:22:46 -0700 (PDT) Subject: Reminder: PhD dissertation defense today Message-ID: <475686.72080.qm@web51404.mail.re2.yahoo.com> Department of Applied Physics University PhD Dissertation Defense Dielectric Optical Antenna Emitters and Metamaterials Jonathan Aaron Schuller Research Advisor: Professor Mark Brongersma 17 August 2009 @ 2:00 p.m. (refreshments @ 1:45) in Allen Building (formerly CIS-X), Room 101 Abstract Optical antennas are critical components in nanophotonics research due to their unparalleled ability to concentrate electromagnetic energy into nanoscale volumes. Researchers typically construct such antennas from wavelength-size metallic structures. However, recent research has begun to exploit the scattering resonances of high-permittivity particles to realize all-dielectric optical antennas, emitters, and metamaterials. In this talk, we experimentally and theoretically characterize the resonant modes of subwavelength rod-shaped dielectric particles and demonstrate their use in negative index metamaterials and novel infrared light emitters. At mid-infrared frequencies, Silicon Carbide (SiC) is an ideal system for studying the behavior of dielectric optical antennas. At frequencies below the TO phonon resonance, SiC behaves like a dielectric with very large refractive index. Using infrared spectroscopy and analytical Mie calculations we show that individual rod-shaped SiC particles exhibit a multitude of resonant modes. Detailed investigations of these SiC optical antennas reveal a wealth of new physics and applications. We discuss the distinct electromagnetic field profile for each mode, and demonstrate that two of the dielectric-type Mie resonances can be combined in a particle array to form a negative index metamaterial. We further show that these particles can serve as "broadcasting" antennas. Using a custom-built thermal emission microscope we collect emissivity spectra from single SiC particles at elevated temperatures, highlighting their use as subwavelength resonant light emitters. Finally, we derive and verify a variety of general analytical results applicable to all cylindrical dielectric antennas and discuss extensions of the demonstrated concepts to different materials systems and frequency regimes From yuhykr at stanford.edu Mon Aug 17 12:02:20 2009 From: yuhykr at stanford.edu (Hyunyong) Date: Mon, 17 Aug 2009 12:02:20 -0700 Subject: PhD dissertation defense : Hyun-Yong Yu Message-ID: <001e01ca1f6d$415d99b0$c418cd10$@edu> Selective Heteroepitaxial Growth of Ge for Monolithic Integration of MOSFETs and Optical Devices Hyun-Yong Yu Department of Electrical Engineering, Stanford University Advisor: Prof. Krishna C. Saraswat Date: Thursday August 20th, 2009 Time: 9:30 AM (Refreshments at 9:15 AM) Location: Paul Allen Building(Formerly CIS-X) CISX auditorium Abstract As Si bulk CMOS devices approach their fundamental scaling limit, diverse research is being done to introduce novel structures and materials. Its high carrier mobility and possible monolithic integration with Si based devices have prompted renewed interest in Ge based devices. For optical applications, it was challenging to make conventional Si photodetectors operate in 1.3-1.55?m wavelength range, due to its relatively large indirect (1.1eV) and direct (3.4eV) bandgaps. However, Ge's smaller direct band gap energy (0.8eV) corresponding to ~1.55?m in wavelength and possible monolithic integration with Si CMOS technology make Ge a strong candidate for photodetectors. I demonstrate high performance Ge MOSFETs and optical devices which can be monolithically integrated to Si technology, by employing novel Ge heteroepitaxial growth and in-situ dopoing technique. In the first part of this talk, we will talk about selective Ge heteroepitaxial growth on Si and in-situ doping technique for n+/p junction. Surface roughness of heteroepitaxially gorwn Ge on Si is considerably reduced by high temperature hydrogen annealing. Ge growth and hydrogen annealing steps are repeated until desired epi layer thickness is reached. High quality Ge film (minimal dislocation (1x107cm-2) and very smooth surface (0.65nm (RMS)) is achieved selectively on Si using SiO2 window. For abrupt and box shaped n+/p junction in Ge, in-situ phosphorus doping using PH3 is employed during the epitaxial growth. Temperature dependency of the dopant activation was investigated associated with the shallower and abrupt junction formation. This diode shows better characteristics (on/off ratio and on current density) compared with conventional ion-implanted junction. In the second part of the talk, we will talk about high performance Ge MOSFETs and optic devices fabricated using selective Ge heteroepitaxial growth on Si. For n-MOSFETs, in-situ doping technique is used to form source and drain with very low series resistance and shallow junctions. p-MOSFET is fabricated with high-k/metal gate stack. Results show the highest electron mobility ever reported on (100) Ge n-MOSFETs and ~80% enhancement of hole mobility over Si universal mobility for p-MOSFETs. I also demonstrate normal incidence p-i-n photodiodes on selectively grown Ge. Enhanced efficiency in the near infrared regime and the absorption edge shifting to longer wavelength is achieved due to residual tensile strain. Measured responsivities are promising towards monolithically integrated on-chip optical links and in telecommunications. -------------- next part -------------- An HTML attachment was scrubbed... URL: From rissman at stanford.edu Tue Aug 18 08:17:06 2009 From: rissman at stanford.edu (Paul Rissman) Date: Tue, 18 Aug 2009 08:17:06 -0700 Subject: Molecular Foundry Presentation Message-ID: <20090818151705.E361437D77@smtp-roam.stanford.edu> Reminder - Today! Please bring your lunch and join us. -------------------------------------------------------------------------------------------------------------- Dr. David Bunzow, head of the User Program, and Dr. Aditi Risbud, a material scientist who oversees the PR/Outreach, both from the Lawrence Berkeley National Laboratory Molecular Foundry, will be here to talk about opportunities for SNF users to access the Foundry for their work: Tuesday, August 18th noon Allen (formerly CIS) 101 (The Linville Room) Here is an abstract of the talk: This presentation will provide an overview of The Molecular Foundry and the user program through which it provides researchers from academia, industry and government no-cost access to expert scientific personnel, and state-of-the-art instrumentation and techniques for the advancement of nanoscale materials research. The Foundry is an especially valuable resource for users pursuing multidisciplinary research in the fields of biology, energy, engineering and physics. Researchers can access six in-house user facilities for the investigation of biological, organic, inorganic and microfabricated nanoscale building blocks and their integration into complex functional assemblies. The Foundry provides unique capabilities in nanoimaging and spectroscopy, nanointerfaces, nanofabrication and combinatorial nanoscience. Projects are considered in three basic categories that include options for sample-only and instrument-only collaborations in addition to fully supported standard programs. The Foundry conducts three announced call for proposals cycles per calendar year. From rissman at stanford.edu Tue Aug 18 11:55:23 2009 From: rissman at stanford.edu (Paul Rissman) Date: Tue, 18 Aug 2009 11:55:23 -0700 Subject: Molecular Foundry Presentation Message-ID: <20090818185524.5B87E37EB7@smtp-roam.stanford.edu> Reminder - Now! Please bring your lunch and join us. -------------------------------------------------------------------------------------------------------------- Dr. David Bunzow, head of the User Program, and Dr. Aditi Risbud, a material scientist who oversees the PR/Outreach, both from the Lawrence Berkeley National Laboratory Molecular Foundry, will be here to talk about opportunities for SNF users to access the Foundry for their work: Tuesday, August 18th noon Allen (formerly CIS) 101 (The Linville Room) Here is an abstract of the talk: This presentation will provide an overview of The Molecular Foundry and the user program through which it provides researchers from academia, industry and government no-cost access to expert scientific personnel, and state-of-the-art instrumentation and techniques for the advancement of nanoscale materials research. The Foundry is an especially valuable resource for users pursuing multidisciplinary research in the fields of biology, energy, engineering and physics. Researchers can access six in-house user facilities for the investigation of biological, organic, inorganic and microfabricated nanoscale building blocks and their integration into complex functional assemblies. The Foundry provides unique capabilities in nanoimaging and spectroscopy, nanointerfaces, nanofabrication and combinatorial nanoscience. Projects are considered in three basic categories that include options for sample-only and instrument-only collaborations in addition to fully supported standard programs. The Foundry conducts three announced call for proposals cycles per calendar year. From rowlette at stanford.edu Thu Aug 20 00:08:31 2009 From: rowlette at stanford.edu (Jeremy Alexander Rowlette) Date: Thu, 20 Aug 2009 00:08:31 -0700 (PDT) Subject: REMINDER: Jeremy Rowlette PhD dissertation defense Today 1:00 PM, CIS-X Aud. In-Reply-To: <1456265719.776081250444995813.JavaMail.root@zm01.stanford.edu> Message-ID: <643257485.548611250752111927.JavaMail.root@zm01.stanford.edu> Department of Electrical Engineering University PhD Dissertation Defense Energy Conversion and Transport in Silicon Nanostructures Jeremy A. Rowlette Research Advisor: Professor Ken Goodson Thursday August 20, 2009 @ 1:00 p.m. (Refreshments at 12:45 p.m.) Paul Allen Building (formerly CIS-X), Auditorium Abstract We examine fundamental energy conversion and transport processes in silicon nanostructures which are relevant to the operation of emerging silicon-based nanoelectronic and nanophotonic devices. The theoretical and experimental work presented here will facilitate the design of improved nanodevices ranging from compact transistors, to quantum dot-based optical sources, detectors, and modulators. In the first half of the talk, we discuss electron-phonon and phonon-phonon energy conversion within nanoscale silicon transistors under conditions of strong departure from thermal equilibrium. As ?hot? electron relaxation tends to favor optical phonon (OP) emission, the conversion from OPs to the acoustic phonons (APs) responsible for heat conduction can yield an energy conversion bottleneck in the drain leading to reduced drive currents and even negative differential conductance effects [1]. We determine the conditions necessary for reaching this critical state in silicon-based nanodevices by developing self-consistent Monte Carlo device simulations which fully couple the electron and phonon systems while accurately accounting for electron and phonon energy dispersion [2]. To assist these calculations, we use anharmonic perturbation theory to compute the two-phonon final-states spectrum and lifetime for selected longitudinal OPs, which have high occupancies during transistor switching. In the second half of the talk, we discuss photon-electron and electron-electron energy conversion within dense (~10^18 cm^-3) systems of small (~5 nm) luminescent silicon nanocrystals (NCs) embedded in amorphous dielectric films, a family of materials which includes annealed silicon rich oxides and nitrides (SRO, SRN), as well as porous silicon (PS). These materials exhibit stable, room-temperature visible and near-infrared luminescence as well as the ability to sensitize codoped Er3+ ions and are therefore promising for the development of inexpensive, CMOS-compatible short-range optical sources. Despite their promise, it has been shown that fast (< ns) nonradiative carrier recombination (NRCR), coupled with long (> ?s) photoluminescence lifetimes, severely limit the prospects for achieving practical levels of optical gain. We characterize these NRCR and associated energy conversion processes by measuring the excited carrier dynamics of optically pumped NCs using a custom-built, two-color picosecond pump-probe measurement system. The unique dependence of the excited carrier losses vs. pump-probe delay and vs. pump intensity reveals enhanced NRCR at high NC occupancies, which we determine to be caused by long?range Coulombic dipole-dipole (d-d) interaction and energy transfer between excited NCs [3]. Finally, we derive the scaling of the effective d-d interaction strength of the NC ensemble in low-dimensional systems and present recent experimental results on quasi-2D SRO films which further supports the interacting d-d model. Monte Carlo analysis is used to provide additional insight into the spatially distributed d-d energy conversion in selected low-dimensional systems. [1] E. Pop, D. Mann, J. Cao, Q. Wang, K. Goodson, H. Dai. Phys. Rev. Lett. 95 155505 (2005) [2] J. Rowlette and K. Goodson. IEEE Trans. Elect. Dev. 55 220 (2008) [3] J. Rowlette, R. Kekatpure, M. Panzer, M. Brongersma, K. Goodson. Phys. Rev. B 80 045314 (2009) From kupnik at stanford.edu Fri Aug 21 12:59:43 2009 From: kupnik at stanford.edu (Mario Kupnik) Date: Fri, 21 Aug 2009 12:59:43 -0700 Subject: looking for holder for one-side liquid etching from Uli Message-ID: <66FA753B-2031-4C75-941F-B177CE5B0DF3@stanford.edu> All, I am looking for the wafer holder that allows you to etch only one side of a wafer in liquids. Normally, Uli has it in her office, but she is on vacation. I had a look in the spot in her office where she stores it with Maureen, but it is not there. I would like to use it later today and on the weekend, please if you know where it is let me know. Thank you Mario From rissman at stanford.edu Mon Aug 24 09:47:37 2009 From: rissman at stanford.edu (Paul Rissman) Date: Mon, 24 Aug 2009 09:47:37 -0700 Subject: International Winter School for Graduates Message-ID: <20090824164738.992BD37D5D@smtp-roam.stanford.edu> Once again, NNIN will conduct an International Winter School for Graduate Students, this year in Mumbai at IIT-Bombay, Nov 30-Dec 13, 2009. Travel will begin on Friday Nov. 27. This year's topic will be Nanoelectronics. This follows last years inaugural offering on Organic Electronics and Optoelectronics held at IIT-Kanpur. The School will consist on an intense technical course on Nanoelectronics at the graduate level--a one semester course taught over an intense 6 days. The course will be taught by leading faculty from US and Indian institutions. Approximately 10 outstanding graduate students from across the US will be chosen to participate. They will be joined by 50 or more students and faculty from India. After the technical course, the US and Indian participants will participate in a field experience for 4 or 5 days in an Indian village, working with a local NGO. We encourage applications from serious, adventurous, advanced graduate students with an interest in Nanoelectronics, in the international aspects of scientific research, and in the impact of science and technology on the 3d world. Participants DO NOT have to be from NNIN institutions and DO NOT have to be NNIN users. We encourage all outstanding graduate students ( US citizens and permanent residents only) to apply. Travel expenses will be paid by NNIN. Application information is available at http://www.nnin.org/nnin_iwsg_2009.html . The application deadline is September 14, 2009. For questions, please contact Rathbun at cnf.cornell.edu. Lynn Rathbun NNIN Program Manager ************************************************************** Dr. Lynn Rathbun Rathbun at cnf.cornell.edu NNIN Program Manager (607)-254-4872 CNF Laboratory Manager Duffield Hall (607)-255-8601 Fax Cornell University (607)-592-1549 Work Cell Ithaca, New York 14853 (607)-342-1880 Personal Cell -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Mon Aug 24 09:50:01 2009 From: mtang at stanford.edu (Mary Tang) Date: Mon, 24 Aug 2009 09:50:01 -0700 Subject: Process Clinic Today (Monday, 8/24) 2 pm Message-ID: <4A92C4B9.5000304@stanford.edu> Greetings Labmembers -- Process Clinic today, Monday, Aug 24, 2 pm, in the cubicle area outside Maureen's office. Bring process questions, mask layouts, SpecMat requests. New labmembers are especially encouraged to come and review process flows and runsheets. Experienced people will be on hand for discussion. Your SNF staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From zhangli at stanford.edu Tue Aug 25 12:20:33 2009 From: zhangli at stanford.edu (Li Zhang) Date: Tue, 25 Aug 2009 12:20:33 -0700 (PDT) Subject: Thesis Defense - Li Zhang In-Reply-To: <66aaf8f30908251217x7bc16d35p1826f7454a255f97@mail.gmail.com> Message-ID: <126686575.76291251228033522.JavaMail.root@zm03.stanford.edu> ? Quasi-One Dimensional Nano-Materials for Nanoelectronic Devices ? Li Zhang Department of Chemistry, Stanford University Advisor: Prof. Hongjie Dai ? Date: Thursday August 27th, 2009 ? Time:?10:00 AM (Refreshments at 9:45 AM) ? Location: BrauLec (in Mudd chemistry building) ? ? Abstract ? As the scaling of silicon based electronic devices is approaching limitation set by the physical and materials properties, several?high mobility?materials have gained much interest as possible substitutions of silicon for future electronics. This thesis focuses on single walled carbon nanotubes (SWNTs), graphene nanoribons (GNRs) and germanium nanowires (GeNWs) due to their unique properties. Germanium nanowires (GeNWs) are?one potential material to address the future device scaling limitation owing to their high hole and electron mobilities. However, the device performance is limited due to the insufficient electrostatic control over charge carriers in the channel in the typical back-gate or top-gate geometry. And the mobility analysis based on capacitance modeling alone without direct measurement could give errors due to a lot of uncertainties. In the?first part of this dissertation, I will demonstrate a novel surround gate structure of GeNW FETs using a novel self-aligned fabrication approach. Individual SG GeNW FETs show improved switching over GeNW FETs with planar gate stacks owing to improved electrostatics. FET devices comprised of multiple quasi-aligned SG GeNWs in parallel afford on-currents exceeding 0.1 mA at low source-drain bias voltages. Direct experimental evidence show that SG nanowire transistors exhibit higher capacitance and better electrostatic gate control than top-gated devices, and are the most promising structure for future high performance nanoelectronics. ? Single walled carbon nanotubes?are molecular quantum wires (diameter ~ 1nm) which are highly chemically stable and exhibit outstanding electrical conductivity. However, typical synthesis of SWNTs yields a mixture of both metallic and semiconducting varieties with a range of diameters. Several methods have been reported to separate SWNTs and anion exchange (IEC) chromatography has shown the most promise for electronic type separation . In the?second part of the dissertation, I will discuss the characterization of IEC separation efficiency by combining spectroscopy and electrical measurents.?In the early experiement, the SWNTs were separated according to diameter and electronic types and the separation efficiency decreased with increasing tube diameter. The separation efficiency was much improved by using the new DNA sequence to suspend the SWNTs and single-chirality-enrichment were achieved. Graphene is single layer graphite, which is predicted to exhibit bandgaps useful for room temperature transistor operations with excellent switching speed and high mobilities when made into narrow ribbons (sub-10 nm). And the all-semiconducting nature of sub-10 nm GNRs could bypass the problem of extreme chirality dependence of metal or semiconductor nature of carbon nanotubes (CNTs) for future electronics. Currently, making GNRs remains challenging by lithographic, chemical or sonochemical methods. It is difficult to obtain GNRs with?controllable width at high yields. In the?third part of the thesis, I will show an interesting approach to making GNRs by using plasma etching to unzip multiwalled carbon nanotubes partially embedded in a polymer film. The GNRs exhibit a narrow width distribution between 10-20 nm. Electrical transport measurements?confirmed the?bandgap opening in narrow GNRs. ? -- Li --------------------------------------- Li Zhang Dai's Group Department of Chemistry Stanford University From shuangli at stanford.edu Wed Aug 26 12:33:34 2009 From: shuangli at stanford.edu (Shuang Li) Date: Wed, 26 Aug 2009 12:33:34 -0700 Subject: RTA question Message-ID: Dear labmembers, Does any one know whether SNF has a RTA which can go as high as 1050 C or even higher. Anneal in air is good enough. Thank you very much. Shuang -------------- next part -------------- An HTML attachment was scrubbed... URL: From chenfang at stanford.edu Thu Aug 27 08:08:39 2009 From: chenfang at stanford.edu (Chen Fang) Date: Thu, 27 Aug 2009 08:08:39 -0700 (PDT) Subject: Ph.D. Defense announcement: Chen Fang (Monday August 31 @ 1:30pm) In-Reply-To: <794323756.400391251384992232.JavaMail.root@zm02.stanford.edu> Message-ID: <1593929174.402151251385719571.JavaMail.root@zm02.stanford.edu> Department of Mechanical Engineering University PhD Dissertation Defense Impact of Surface Tension on Microchannel Two-Phase Flow Chen Fang Research Advisor: Professor Kenneth E. Goodson Time: Monday August 31, 2009 @ 1:30 p.m. (Refreshments at 1:15 p.m.) Location: MERL(Mechanical Engineering Research Lab) Conference Room (Rm. 203) Abstract Understanding the physics of microchannel two-phase flow is important for a broad variety of engineering problems. At microscale, small Bond number, Capillary number and Weber number indicate that the surface tension force dominates gravity, viscous force, and inertial force. In the confined space with complex geometry, i.e. porous media, the interaction between fluid phase and solid phase is of particular importance, and the surface hydrophobicity and contact angle hysteresis effect plays a significant role. In micro-devices involving phase change process, the inter-phase mass transfer coupled with the interfacial force further adds to the complexity of the problem, leading to many unique characteristics of the microchannel two-phase flow. The first part of the work aims at developing a numerical model within the frame work of volume-of-fluid method to simulate the contact angle hysteresis effect governing the microchannel two-phase flow. The model is validated against two engineering problems, i.e. the sidewall water injection in the microchannel and the droplet detachment on a spinning plate. The comparison between model prediction and the experimental visualization shows that the new model accounting for the contact angle hysteresis effect can dramatically improve the simulation accuracy. The second part of the talk is dedicated to the development and validation of the capillary force model used for simulating the multiphase flow in porous with controlled hydrophobicity. The model is then applied to the simulation of boiling flow in the vapor-venting microchannel, which enables the capillary-aided phase separation for heat removal capacity enhancement. The simulation replicates the capillary-induced vapor-venting process, and clearly shows that the vapor-venting microchannel can effectively suppress the channel clogging and dry-out. The third part of the talk explores the impact of surface tension and channel hydrophobicity on the microchannel condensation. High speed imaging technique in conjunction with the interferometry is employed to study the flow pattern and construct the 3D liquid-vapor interface profile. The measured exotic interface shape is compared with the prediction of a compact model accounting for the capillary-assisted liquid transfer effect. The agreement clearly shows the dominant effect of the surface tension on the condensation flow in the microchannel.The influence of channel hydrophobicity on the heat transfer characteristic is also investigated. From rfasch at stanford.edu Thu Aug 27 15:24:05 2009 From: rfasch at stanford.edu (Rainer Fasching) Date: Thu, 27 Aug 2009 15:24:05 -0700 Subject: amorphous silicon depositon - outsourcing Message-ID: <001601ca2765$167bc230$43734690$@edu> Dear SNF community: We are looking for places who can do amorphous silicon depositions on "non clean" substrates. Please let me know, if you know any leads. Thanks, Rainer Rainer Fasching, PhD Cons. Associate Professor Mechanical Engineering and Design Stanford University Phone: 415-505-3385 Fax: 650-723-5034 Skype: rfasch Email: rfasch at stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From shott at stanford.edu Fri Aug 28 12:01:55 2009 From: shott at stanford.edu (John D Shott) Date: Fri, 28 Aug 2009 12:01:55 -0700 (PDT) Subject: SNF is again open following the power outage .... Message-ID: <1257350671.936701251486115237.JavaMail.root@zm07.stanford.edu> SNF Lab Members: The lab is once again open for business following this morning's power outage. With very few exceptions, virtually all tools should be functional. Of course, as is the case after every "event" of this type, you should carefully check tool status, examine recipes, and run a test prior to committing important samples to any step. We don't yet know the full story as to what caused this, but we understand that it was a brief power outage that affected much, if not all, of the campus. Happy processing, John From chenfang at stanford.edu Mon Aug 31 07:47:51 2009 From: chenfang at stanford.edu (Chen Fang) Date: Mon, 31 Aug 2009 07:47:51 -0700 (PDT) Subject: REMINDER: Chen Fang Ph.D. Dissertation Defense Today, 1:30pm, MERL Rm.203 In-Reply-To: <134666728.837861251729972604.JavaMail.root@zm02.stanford.edu> Message-ID: <430321398.838051251730071511.JavaMail.root@zm02.stanford.edu> Department of Mechanical Engineering University PhD Dissertation Defense Impact of Surface Tension on Microchannel Two-Phase Flow Chen Fang Research Advisor: Professor Kenneth E. Goodson Time: Monday August 31, 2009 @ 1:30 p.m. (Refreshments at 1:15 p.m.) Location: MERL(Mechanical Engineering Research Lab) Conference Room (Rm. 203) Abstract Understanding the physics of microchannel two-phase flow is important for a broad variety of engineering problems. At microscale, small Bond number, Capillary number and Weber number indicate that the surface tension force dominates gravity, viscous force, and inertial force. In the confined space with complex geometry, i.e. porous media, the interaction between fluid phase and solid phase is of particular importance, and the surface hydrophobicity and contact angle hysteresis effect plays a significant role. In micro-devices involving phase change process, the inter-phase mass transfer coupled with the interfacial force further adds to the complexity of the problem, leading to many unique characteristics of the microchannel two-phase flow. The first part of the work aims at developing a numerical model within the frame work of volume-of-fluid method to simulate the contact angle hysteresis effect governing the microchannel two-phase flow. The model is validated against two engineering problems, i.e. the sidewall water injection in the microchannel and the droplet detachment on a spinning plate. The comparison between model prediction and the experimental visualization shows that the new model accounting for the contact angle hysteresis effect can dramatically improve the simulation accuracy. The second part of the talk is dedicated to the development and validation of the capillary force model used for simulating the multiphase flow in porous with controlled hydrophobicity. The model is then applied to the simulation of boiling flow in the vapor-venting microchannel, which enables the capillary-aided phase separation for heat removal capacity enhancement. The simulation replicates the capillary-induced vapor-venting process, and clearly shows that the vapor-venting microchannel can effectively suppress the channel clogging and dry-out. The third part of the talk explores the impact of surface tension and channel hydrophobicity on the microchannel condensation. High speed imaging technique in conjunction with the interferometry is employed to study the flow pattern and construct the 3D liquid-vapor interface profile. The measured exotic interface shape is compared with the prediction of a compact model accounting for the capillary-assisted liquid transfer effect. The agreement clearly shows the dominant effect of the surface tension on the condensation flow in the microchannel.The influence of channel hydrophobicity on the heat transfer characteristic is also investigated. From nishiy at stanford.edu Mon Aug 31 10:36:13 2009 From: nishiy at stanford.edu (Yoshio Nishi) Date: Mon, 31 Aug 2009 10:36:13 -0700 Subject: Announcement for changes in SNF for a new fiscal year Message-ID: <000001ca2a61$8a105180$c238f20a@LENOVO9353AC45> SNF Lab Members: As Tuesday represents the start of a new fiscal year, I wanted to alert you to a couple of items of note: First, we have decided that because of overall financial challenges, both within and outside the university, we will have NO rate increase this year. We hope that this will provide a measure of relief to our entire user community during this critical time. Second, after discussing matters with Dean Plummer and key SNF faculty Members and users, we will reorganize SNF operation for several key technical functions by combining process and maintenance together. I have asked John Shott to assume the position of SNF Interim Director, and have decided to step down as Director of SNF, while I will continue to supervise the senior SNF staff for NSF-sponsored NNIN program and a variety of collaborative research programs as NNIN Stanford Site Director. I am confident that John and our technical staff will strive to make our tools and processes meet the research needs of the broadest possible research community. Should you have any questions, please do not hesitate to contact John or me. We will each be happy to meet with you. Thank you, Yoshio