From eunjik at stanford.edu Mon Mar 2 02:20:08 2009 From: eunjik at stanford.edu (Eun Ji Kim) Date: Mon, 2 Mar 2009 02:20:08 -0800 Subject: Eun Ji Kim's Ph.D. Oral Exam Message-ID: <3660b4d00903020220q4a645f7as9a647288a27436c1@mail.gmail.com> Interface and Defect Study of High Permittivity Dielectrics on Si and III-V semiconductors Eun Ji Kim Advisors: Prof. Paul C. McIntyre in Materials Science and Engineering Prof. Krishna C. Saraswat in Electrical Engineering Date: Thursday, Mar. 19, 2009 Time: 2:00 PM (Refreshments served at 1:45 PM) Location: Packard Bldg. Rm. 202 In an effort to decrease electronic device dimensions and improve device performance, high permittivity dielectrics have been introduced to metal-oxide-semiconductor field effect transistors (MOSFETs). Even though replacing SiO2 with high permittivity dielectrics enabled aggressive device scaling, however, the introduction of new materials gave rise to fundamental problems that could lead to device performance degradation, such as reduction of the effective carrier channel mobility and threshold voltage instabilities. Unsatisfied dangling bonds at the interface of the high permittivity dielectrics and Si, intrinsic and extrinsic point defects in high permittivity dielectrics, and remote phonon scattering are believed to cause degradation of device performance. To understand the limitations to the performance of MOSFETs with high permittivity dielectrics, it is critical to probe phonon modes and defect states directly in high-k dielectrics. Inelastic electron tunneling spectroscopy (IETS) is employed to study soft phonon modes and defect states in HfO2 grown by atomic layer deposition (ALD) on Si. Observed spectral features suggest that monoclinic- and tetragonal- HfO2 vibrational modes exist in the annealed HfO2 while crystalline HfO2 vibrational modes are not detected in the as-deposited samples, consistent with selective area electron diffraction analysis. In addition to soft phonon modes of HfO2, changes in amplitude and energy of spectral features were observed as the bias condition changes. We attribute these features to defect-related states in HfO2 and analyze them in terms of electron energy states in the HfO2 bandgap and reported oxygen vacancy states in HfO2. For further device scaling, III-V compound semiconductors are receiving increasing attention for channel replacement in the metal-oxide-semiconductor (MOS) technology beyond 22 nm node because of their high intrinsic electron mobility. Unlike SiO2 that exhibits excellent passivating properties on Si with low interface state densities, there typically exists a large density of defect states at the interface of III-V semiconductors and their native oxides. Previous research on GaAs showed that less than 1 % of a monolayer of chemisorbed O2 can pin the Fermi level at the semiconductor surface. Therefore, suppressing oxidation of the III-V semiconductors? surface prior to and during gate dielectric deposition could be essential to achieving device performance superior to that of silicon in nanoscale devices. Several different approaches have been demonstrated to prepare III-V semiconductor-based MOS devices. However, previously attempted methods resulted in frequency-dependent flat band voltage (Vfb) shift, charge trapping in the dielectrics and a relatively high density of interface trap states, possibly from unintentional oxidation of the III-V channel. We used In0.53Ga0.47As (100) channels that were capped with an arsenic layer after channel epitaxial growth to avoid III-V oxidation during exposure of the samples to air. The As capping layer was thermally desorbed *in-situ *in a load-locked ALD reactor prior to Al2O3 gate dielectric deposition. By preventing subcutaneous oxidation of the channel surface, we obtained unpinned Al2O3/In0.53Ga0.47As interfaces with a low density of interface states. The C-V characteristics show a hysteresis of less than 40 mV and relatively small frequency dispersion in accumulation. The surface potential swing (0.44~1.2 eV) calculated using the Berglund integral suggests the absence of a high density of midgap interface states. The observation of near-ideal flat band voltage values for Pt- and Al-electroded MOS capacitors indicates the absence of a significant interface dipole. The temperature-independence of the frequency dispersion of the accumulation capacitance and its scaling with measurement frequency are consistent with tunneling of carriers into defects in the Al2O3 layer, border traps. This also indicates a low interface state density for these devices. -------------- next part -------------- An HTML attachment was scrubbed... URL: From gthareja at stanford.edu Tue Mar 3 14:20:33 2009 From: gthareja at stanford.edu (Gaurav Thareja) Date: Tue, 3 Mar 2009 14:20:33 -0800 (PST) Subject: Diffusion cleaning (or some cleaning) for 12 inch Silicon wafers Message-ID: <672874859.1169201236118833515.JavaMail.root@zm06.stanford.edu> Dear lab-mates We are interested to get diffusion clean for a few 12 inch Silicon wafers. Please let us know, if there is a facility or company who can do it for us. thanks ~gaurav From amf at amfitzgerald.com Tue Mar 3 14:58:17 2009 From: amf at amfitzgerald.com (Alissa M. Fitzgerald) Date: Tue, 3 Mar 2009 14:58:17 -0800 Subject: Diffusion cleaning (or some cleaning) for 12 inch Silicon wafers In-Reply-To: <672874859.1169201236118833515.JavaMail.root@zm06.stanford.edu> References: <672874859.1169201236118833515.JavaMail.root@zm06.stanford.edu> Message-ID: <009001c99c53$8b23fd20$0600a8c0@minicat> Noel Technologies in Campbell, CA www.noeltech.com Regards, Alissa Alissa M. Fitzgerald, Ph.D. Managing Member A.M. Fitzgerald & Associates, LLC 655 Skyway Rd. Suite 118 San Carlos, CA 94070 +1 (650) 592-6100 x101 phone +1 (650) 592-6111 fax www.amfitzgerald.com > -----Original Message----- > From: Gaurav Thareja [mailto:gthareja at stanford.edu] > Sent: Tuesday, March 03, 2009 2:21 PM > To: labmembers > Subject: Diffusion cleaning (or some cleaning) for 12 inch > Silicon wafers > > Dear lab-mates > > We are interested to get diffusion clean for a few 12 inch > Silicon wafers. Please let us know, if there is a facility or > company who can do it for us. > > thanks > ~gaurav From rissman at stanford.edu Thu Mar 5 08:58:29 2009 From: rissman at stanford.edu (Paul Rissman) Date: Thu, 05 Mar 2009 08:58:29 -0800 Subject: ASML Customer Workshop at SNF - Tuesday, March 31, 2009 - 12 noon to 5 pm Message-ID: <20090305165831.72C5C77F17@smtp-roam.stanford.edu> On behalf of ASML and Keith Best, you are invited to their Customized Imaging Solutions customer workshop on Tuesday, March 31, 2009 from 12 noon to 5 pm. In order to get a proper count for the lunch ASML is providing, please register at: http://www.surveymonkey.com/s.aspx?sm=fJEcP3GkvBdm3b_2bFqy5Mjg_3d_3d > >---------- >From: ASML CIS [mailto:michael.pullen at asml.com] >Sent: Wednesday, March 04, 2009 12:37 PM >To: Keith Best >Subject: ASML CIS Customer Workshop at Stanford Nanofabrication Facility (SNF) > >[] > >[] > >[] > >ASML CIS Customer Workshop at Stanford Nanofabrication Facility (SNF) > >Please Register to Attend >Agenda >12:00 PM Lunch > >1:00 PM Welcome & Introduction - Keith Best (ASML) >1:10 PM MEMS Market and ASML Solutions - Keith Best (ASML) >1:40 PM Recent results from Stanford/ASML - JDA Paul Rissman (SNF) >2:10 PM Canadian Photonics Fabrication Center's >approach to patterning - Simon Wingar (CPFC) >2:30 PM GE - ASML small piece handling project - Keith Best (ASML) >2:50 PM Quick-turn device development w/ASML's >compound image design software (CID)- Paul Schuele (Sharp) > >3:10 PM Coffee Break > >3:30 PM ASML CIS demo update - Vinny Pici (ASML) >4:00 PM TFH market and ASML solutions - Keith Best (ASML) >4:30 PM Leveraging Lithography Toolsets in a >Development Foundry-SVTC - Mary Zawadzki(SVTC) > >5:00 PM Close > >Please respond by filling out the registration form. >Go >to Registration Form > > >Date: Tuesday, March 31st >Time: 12:00 PM - 5:00 PM >Location: SNF Auditorium, Paul Allen Center for >Integrated Systems (CIS) Extension >Visitor Information > >? Copyright 2009 (ASML) All rights reserved | >ASML Netherlands B.V., De Run 6501, 5503 LA Veldhoven, The Netherlands > >Legal >Terms and Conditions | >Privacy Policy > >-- The information contained in this >communication and any attachments is >confidential and may be privileged, and is for >the sole use of the intended recipient(s). Any >unauthorized review, use, disclosure or >distribution is prohibited. Unless explicitly >stated otherwise in the body of this >communication or the attachment thereto (if >any), the information is provided on an AS-IS >basis without any express or implied warranties >or liabilities. To the extent you are relying on >this information, you are doing so at your own >risk. If you are not the intended recipient, >please notify the sender immediately by replying >to this message and destroy all copies of this >message and any attachments. ASML is neither >liable for the proper and complete transmission >of the information contained in this >communication, nor for any delay in its receipt. -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: 416c93.gif Type: image/gif Size: 18387 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: 416c9d.gif Type: image/gif Size: 10662 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: 416c9d.jpg Type: image/jpeg Size: 7358 bytes Desc: not available URL: From dwitte at stanford.edu Thu Mar 5 15:04:31 2009 From: dwitte at stanford.edu (Daniel Witte) Date: Thu, 5 Mar 2009 15:04:31 -0800 Subject: Soitec wafers wanted Message-ID: <8d3fd7200903051504u42bcf68flc4ce4b0a5d0c074e@mail.gmail.com> Hi all, I'd like to get hold of a few Soitech wafers (any device thickness/doping is OK) for some experiments. If anyone has a few spare (can trade for something!) or knows of a vendor that will sell a few, it would be greatly appreciated! Thanks much, Dan. From mtang at stanford.edu Fri Mar 6 09:39:54 2009 From: mtang at stanford.edu (Mary Tang) Date: Fri, 06 Mar 2009 09:39:54 -0800 Subject: Special Process Clinic: Monday, 3/9, 2-4 pm Message-ID: <49B15FEA.9050709@stanford.edu> Hi all -- There will be a special process clinic this Monday, March 9, from 2-4 pm, in the cubicle area near Maureen's office. Keith Best from ASML will be there, dispensing wisdom he's collected from working with and in a variety of fab areas. And Bill Martin, from Compugraphics, will be on hand from 3 pm to answer questions about masking and layouts. So, bring your process flows and your layouts. It'll be fun. Your SNF Staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From clueth at stanford.edu Fri Mar 6 13:16:46 2009 From: clueth at stanford.edu (christopher lueth) Date: Fri, 6 Mar 2009 13:16:46 -0800 Subject: Refractometer Message-ID: Hi, I was wondering if anyone has a refractometer in their lab that I could use to measure the refractive index of both solids and liquids. If not, perhaps someone may know where I can find one. Thanks, Chris Lueth -------------- next part -------------- An HTML attachment was scrubbed... URL: From jtsai at kumetrix.com Fri Mar 6 16:24:23 2009 From: jtsai at kumetrix.com (Jrhung Tsai) Date: Fri, 06 Mar 2009 16:24:23 -0800 Subject: Lost Notebook and Wafers Message-ID: <49B1BEB7.2090303@kumetrix.com> Hi Labmembers: I lost my lab notebook and some processed wafers in a wafer box today (3/6, Friday). The notebook has my login name (jtsai) on, and the wafer box only has some lot numbers on it. If you took them by mistake or see them in the lab, could you please let me know. Thank you a lot. Regards, JrHung Kumetrix Inc. From yychung at stanford.edu Sat Mar 7 16:06:48 2009 From: yychung at stanford.edu (Yoonyoung Chung) Date: Sat, 7 Mar 2009 16:06:48 -0800 (PST) Subject: Highly-doped 4" p-type Si wafer Message-ID: <212744167.2669201236470808452.JavaMail.root@zm02.stanford.edu> Dear Labmembers, Does anyone have highly-doped (<0.01 ohm-cm) 4" p-type Si wafers? I wonder if any of you could provide me two of them. Thank you. Sincerely, Yoonyoung Chung From mbaran at stanford.edu Mon Mar 9 11:13:13 2009 From: mbaran at stanford.edu (Maureen Baran) Date: Mon, 9 Mar 2009 11:13:13 -0700 Subject: Found USB Stick Last Friday at 5:00P Outside Room 126 Message-ID: <003d01c9a0e2$b66fc0c0$234f4240$@edu> A concerned labmember found a USB stick last Friday outside room 126 of the CIS Building. If it's yours please come by my cubicle and be prepared to describe it. Maureen Maureen Baran Stanford Nanofabrication Facility Lab Services Administrator mbaran at stanford.edu 650-725-3664 -------------- next part -------------- An HTML attachment was scrubbed... URL: From jwpchen at stanford.edu Tue Mar 10 14:54:48 2009 From: jwpchen at stanford.edu (Peter Chen) Date: Tue, 10 Mar 2009 14:54:48 -0700 Subject: seminar: Baris Cagdaser - Monday March 16 3-4pm CIS 101X Message-ID: <49B6E1A8.3090004@stanford.edu> =================================================================== Resonant Circuits for Low Voltage Electrostatic Drive and Position Sensing =================================================================== ----------------------- Monday, March 16, 2009 CIS 101X 3:00-4:00pm ----------------------- ----------------------------------- Baris Cagdaser Senior Integrated Circuits Designer InvenSense, Sunnyvale, CA ----------------------------------- Abstract --------- This talk presents a single MEMS electrostatic interface circuit that does not require high voltage electronics, but does provide high voltage actuation, position sensing, and extends the range of parallel-plate actuators. Electrostatic actuation finds widespread use in micromechanical systems. Despite being simple in implementation, achieving a sufficiently large force is often challenging. Increasing the actuator voltage results in increased force, but requires special interfaces with high voltage electronics. Furthermore, position feedback is commonly used to control the dynamic response of the actuator. In principle, the position dependent actuation capacitance can be used for sensing. But, in practice, measuring this capacitance is challenging due to small levels of signal and large feedthrough from the drive system. So, most actuators need separate sense electrodes as well as circuit techniques such as time division multiplexing. The core of the proposed circuit is an electrical RLC tank formed by the actuation capacitor and an inductor. When driven at its electrical resonance, the tank amplifies the voltage across the actuator capacitor. So, the actuation voltage becomes much higher than the drive signal provided by electronics. The prototype implementation uses only a 4Vpeak drive signal to actuate a MEMS mirror that requires 45VDC under conventional voltage control. Since the actuator capacitor is position dependent, achieving the maximum amplification requires an oscillator circuit that automatically follows the tank?s electrical resonance frequency as the actuator moves. So, the actuator motion translates the oscillator frequency, which is now used to measure the MEMS displacement in the same interface circuit. Finally, the position dependent nature of the tank also increases the range of parallel-plate actuators by providing inherent position feedback and changing the pull-in behavior. Biography ---------- Baris Cagdaser received his BS degree from the Middle East Technical University in Ankara, Turkey, where he worked with Prof. Tayfun Akin on MEMS capacitive ice detectors. During his PhD studies at the University of California at Berkeley, he worked with Prof. Bernhard E. Boser focusing on MEMS interface electronics. Specifically, he developed a low voltage electrostatic interface for electrostatic actuation and position sensing. This circuit was used for the positioning of MEMS micro-mirrors. Since earning his PhD degree in 2005, Baris Cagdaser has been with InvenSense, a Silicon Valley MEMS start-up company, as a Senior IC Designer working on integrated interface electronics for MEMS inertial sensors. From goldhaber-gordon at stanford.edu Tue Mar 10 15:51:59 2009 From: goldhaber-gordon at stanford.edu (David Goldhaber-Gordon) Date: Tue, 10 Mar 2009 15:51:59 -0700 Subject: Annual Nanoprobes Workshop at Stanford, April 24. Register now. Message-ID: Dear SNF Labmembers, On Friday April 24, Stanford's Center for Probing the Nanoscale will present its 5th Annual Nanoprobes Workshop, on Stanford campus at the Bechtel Conference Center. Ten outstanding speakers will describe cutting-edge developments in imaging nanoscale electronic, magnetic, optical, and chemical phenomena. This will be followed by a student/postdoc poster session. You and your colleagues are warmly invited to attend the workshop. Students are encouraged to present posters -- we typically have many industry attendees who appreciate having students explain their exciting work. The website is open for registration. Details about registration and speakers are below. Also see attached program. Questions: Laraine Lietz-Lucas, lietz at stanford.edu Best wishes, David Goldhaber-Gordon Deputy Director, Center for Probing the Nanoscale, an NSF Nanoscale Science and Engineering Center Details: Registration http://www.stanford.edu/group/cpn/research/anworkshop_reg.html Registration Fee Structure: Industry - $100 Academic and Government (except CPN Investigators) - $50 Community College, K-12, and Museum Personnel - $25 Students and CPN investigators are free but must register Speakers: Bob Westervelt, Harvard University ?Imaging Quantum Devices? Dmitri Basov, University of California, San Diego ?Infrared Nano-Scopy of Complex Materials? Sergei Kalinin, Oak Ridge National Laboratory ?Deciphering Nanoscale Interactions: Artificial Neural Networks and Scanning Probe Microscopy? Dawn Bonnell, University of Pennsylvania ?Beyond Structure: Probing Complex Properties with Subnanometer Resolution? Sasha Balatsky, Los Alamos National Laboratory ?Dirac Materials? Alex de Lozanne, University of Texas, Austin ?Nanocharacterization with Scanning Probes? Matthias Bode, Argonne National Laboratory ?Imaging Non-Collinear Magnetic Nanostructures with Atomic Resolution? Ophir Auslaender, Stanford University ?Probing Microscopic and Dynamical Properties of Superconducting Vortices by Vortex Dragging? Joachim St?hr, SLAC National Accelerator Laboratory ?X-Ray Studies of the Ultrafast Magnetic Nanoworld? Dan Rugar, IBM Almaden Research Center ?Nanoscale MRI ? The Quest for a Molecular Structure Microscope? ----------------------------------------------------------------- David Goldhaber-Gordon goldhaber-gordon at stanford.edu Associate Professor of Physics davidg at post.harvard.edu and Deputy Director, (permanent forwarding) Center for Probing the Nanoscale www.goldhaber-gordon.com Stanford University www.stanford.edu/group/cpn/ (650) 725-2047 (lab) (650) 724-3709 (office) Address for letters or packages: Administrative Associate: David Goldhaber-Gordon Roberta Edwards Geballe Laboratory for Advanced Materials McCullough, Rm. 338 McCullough Building, Room 346 Phone: (650) 723-8028 476 Lomita Mall Fax: (650) 724-3681 Stanford, CA 94305-4045 email: redward at stanford.edu -------------- next part -------------- A non-text attachment was scrubbed... Name: CPNWorkshopProgram2009.pdf Type: application/pdf Size: 39256 bytes Desc: not available URL: From eunjik at stanford.edu Tue Mar 10 23:35:20 2009 From: eunjik at stanford.edu (Eun Ji Kim) Date: Tue, 10 Mar 2009 23:35:20 -0700 Subject: Eun Ji Kim's Dissertation Defense Message-ID: <3660b4d00903102335x30fa9e16v1b7ea1fd3e7aa3ef@mail.gmail.com> Interface and Defect Study of High Permittivity Dielectrics on Si and III-V semiconductors Eun Ji Kim Advisors: Prof. Paul C. McIntyre in Materials Science and Engineering Prof. Krishna C. Saraswat in Electrical Engineering Date: Thursday, Mar. 19, 2009 Time: 2:00 PM (Refreshments served at 1:45 PM) Location: Packard Bldg. Rm. 202 In an effort to decrease electronic device dimensions and improve device performance, high permittivity dielectrics have been introduced to metal-oxide-semiconductor field effect transistors (MOSFETs). Even though replacing SiO2 with high permittivity dielectrics enabled aggressive device scaling, however, the introduction of new materials gave rise to fundamental problems that could lead to device performance degradation, such as reduction of the effective carrier channel mobility and threshold voltage instabilities. Unsatisfied dangling bonds at the interface of the high permittivity dielectrics and Si, intrinsic and extrinsic point defects in high permittivity dielectrics, and remote phonon scattering are believed to cause degradation of device performance. To understand the limitations to the performance of MOSFETs with high permittivity dielectrics, it is critical to probe phonon modes and defect states directly in high-k dielectrics. Inelastic electron tunneling spectroscopy (IETS) is employed to study soft phonon modes and defect states in HfO2 grown by atomic layer deposition (ALD) on Si. Observed spectral features suggest that monoclinic- and tetragonal- HfO2 vibrational modes exist in the annealed HfO2 while crystalline HfO2 vibrational modes are not detected in the as-deposited samples, consistent with selective area electron diffraction analysis. In addition to soft phonon modes of HfO2, changes in amplitude and energy of spectral features were observed as the bias condition changes. We attribute these features to defect-related states in HfO2 and analyze them in terms of electron energy states in the HfO2 bandgap and reported oxygen vacancy states in HfO2. For further device scaling, III-V compound semiconductors are receiving increasing attention for channel replacement in the metal-oxide-semiconductor (MOS) technology beyond 22 nm node because of their high intrinsic electron mobility. Unlike SiO2 that exhibits excellent passivating properties on Si with low interface state densities, there typically exists a large density of defect states at the interface of III-V semiconductors and their native oxides. Previous research on GaAs showed that less than 1 % of a monolayer of chemisorbed O2 can pin the Fermi level at the semiconductor surface. Therefore, suppressing oxidation of the III-V semiconductors? surface prior to and during gate dielectric deposition could be essential to achieving device performance superior to that of silicon in nanoscale devices. Several different approaches have been demonstrated to prepare III-V semiconductor-based MOS devices. However, previously attempted methods resulted in frequency-dependent flat band voltage (Vfb) shift, charge trapping in the dielectrics and a relatively high density of interface trap states, possibly from unintentional oxidation of the III-V channel. We used In0.53Ga0.47As (100) channels that were capped with an arsenic layer after channel epitaxial growth to avoid III-V oxidation during exposure of the samples to air. The As capping layer was thermally desorbed in-situ in a load-locked ALD reactor prior to Al2O3 gate dielectric deposition. By preventing subcutaneous oxidation of the channel surface, we obtained unpinned Al2O3/In0.53Ga0.47As interfaces with a low density of interface states. The C-V characteristics show a hysteresis of less than 40 mV and relatively small frequency dispersion in accumulation. The surface potential swing (0.44~1.2 eV) calculated using the Berglund integral suggests the absence of a high density of midgap interface states. The observation of near-ideal flat band voltage values for Pt- and Al-electroded MOS capacitors indicates the absence of a significant interface dipole. The temperature-independence of the frequency dispersion of the accumulation capacitance and its scaling with measurement frequency are consistent with tunneling of carriers into defects in the Al2O3 layer, border traps. This also indicates a low interface state density for these devices. -------------- next part -------------- An HTML attachment was scrubbed... URL: From slatif at stanford.edu Wed Mar 11 02:14:43 2009 From: slatif at stanford.edu (Salman Latif) Date: Wed, 11 Mar 2009 02:14:43 -0700 (PDT) Subject: Reminder: Salman Latif PhD Orals Thursday, 2:30pm, CIS-X Auditorium Message-ID: <679866853.2666851236762883598.JavaMail.root@zm06.stanford.edu> ************************************************************************ University Ph.D. Oral Examination Low Capacitance Silicon CMOS Photodetectors for Optical Interconnects Salman Latif Department of Electrical Engineering Stanford University CIS-X Auditorium (X-101) Thursday, March 12, 2009 2:30 PM - 3:30 PM (Refreshments served at 2:15 PM) ************************************************************************ The feasibility of Silicon as a platform for optoelectronics has generated intense research efforts and publicity in the last few years. One of the areas in which these advances in Silicon photonics have the potential to make an impact is the interconnect part of electrical systems. As data rates scale to higher speeds, electrical interconnects require increased power dissipation and signal processing complexity. For example, interconnects take up to 50% of microprocessor power, and this portion is expected to rise to 80% in the future. Given that power dissipation is a critical parameter in today's electronic systems, the use of optics to carry data to and from VLSI chips is an attractive option if it can be done at a low enough power. To meet future interconnect scaling requirements, optical output devices need to have energies of ~10 fJ/bit for I/O. This places a huge constraint on the capacitance of photodetectors, which form the receiving front end of optical interconnect links. We estimate that photodetector capacitances of the order of 1 fF are required. These numbers are achievable for small area photodetectors fabricated entirely in a Silicon CMOS process that are directly integrated with the receiving circuitry at the transistor level. This talk will present our work on the design, fabrication, characterization, and system level demonstrations of various Silicon photodetector devices. First we will describe the characterization of CMOS compatible detectors fabricated in a commercial Silicon on Sapphire (SOS) CMOS process. Detector response times of ~ 35 ps have been measured, and devices have capacitance as low as ~ 4 fF. Next, these photodetectors are integrated with additional circuitry to implement optically triggered sampler circuits on chip. These circuits enable us to form a high speed oscilloscope that can measure high bandwidth analog signals on-chip. We demonstrate the complete capture of a 20 GHz on-chip signal, and precise measurement of skew between two separate chip locations. Finally, we present the design of nano-scale photodetectors fabricated on a Silicon-on-Oxide platform. These detectors have physical dimensions of the order of 150 nm, and are integrated with optical dipole antennas to resonantly enhance responsivity. We measure response times of ~2 ps from nano-scale MSM photodetectors fabricated on this platform. Such sub-wavelength scale photodetectors offer the promise of optoelectronic integration at the scale of transistor dimensions, and coupled with resonantly enhanced detection techniques, would result in significant power, speed, and area gains. https://mailman.stanford.edu/mailman/listinfo/ee-students From bhardin at stanford.edu Thu Mar 12 11:17:35 2009 From: bhardin at stanford.edu (Brian E Hardin) Date: Thu, 12 Mar 2009 11:17:35 -0700 Subject: Stretchable Silicon for Photovoltaic Panels, etc (Friday, 12pm, McCullough 115) Message-ID: <69e1b16c0903121117x339d298aibab66b482318d3f0@mail.gmail.com> Stanford Nanoscience & Nanotechnology Society* *Seminar: *Stretchable Silicon for solar panels, sensor networks, and flat-screen TVs. * * * ** ** Kevin Huang (Prof. Peter Peumans group) *When: **Friday March. 13**th** 12pm * *Where: **McCullough Rm 115* *.* *Free Food **(pizza) **served at 11:45am* For more information please visit http://nanosociety.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From mbaran at stanford.edu Thu Mar 12 16:57:35 2009 From: mbaran at stanford.edu (Maureen Baran) Date: Thu, 12 Mar 2009 16:57:35 -0700 Subject: Cell Phone Found in the CIS Auditorium this Afternoon. Message-ID: <007d01c9a36e$50cc34e0$f2649ea0$@edu> A cell phone was found in the CIS Auditorium this afternoon, if it is yours, please come and claim it. The phone is dead so, we are unable to contact you. I'm in cubicle #41 on the first floor of the CIS building. Maureen Maureen Baran Stanford Nanofabrication Facility Lab Services Administrator mbaran at stanford.edu 650-725-3664 -------------- next part -------------- An HTML attachment was scrubbed... URL: From sjinpark at stanford.edu Fri Mar 13 14:37:37 2009 From: sjinpark at stanford.edu (Sung Jin Park) Date: Fri, 13 Mar 2009 14:37:37 -0700 Subject: Defense announcement on 3/16 monday Message-ID: Title: Development of Piezoresistive Microcantilever based Force Feedback System for Study of Mechanotransduction in C. elegans University Oral Examination Sung-Jin Park Department of Mechanical Engineering Stanford University Advisor: Beth Pruitt and Miriam Goodman Date: Monday, March 16, 2009 Time: 10AM (Refreshments served at 9:45AM) Location: Building 300- room 300 (Auditorium) (map attached) Abstract: Cellular mechanotransduction, the conversion of force into to an electrical or biochemical signal, is a fundamental process essential to normal life, including hearing, touch and balance. Among these, touch sensation is the least understood. The nematode *Caenorhabditis elegans *is one of the most powerful model organisms in which to analyze the mechanism of touch sensation. Few techniques exist to provide forces and displacements appropriate for such studies. To address this technological gap, we developed a metrology using piezoresistive cantilevers as force-displacement sensors coupled to feedback system in order to apply and maintain defined load profiles to micron-scale animals. This thesis presents 1) design and optimization of piezoresistive cantilever, 2) integration and development of force clamp system, and 3) biological studies of *C. elegans*mechanotransduction. We developed and validated an analytical model to predict the force sensitivity and force resolution of a piezoresistive cantilever. We systematically analyzed the effects of process parameters on the sensitivity and resolution of the cantilevers to optimize their design. This optimization technique produced optimal cantilever with minimum resolution such as 69 pN at 1-1000 Hz bandwidth. This analytical model and optimization technique are very useful to design piezoresistive devices with complex design conditions for biological applications. We conducted biological studies of *C. elegans* mechanotransduction by integrating the developed force probe with force and displacement feedback system. We measured body stiffness of wild type and mutants which alter body shape and cuticle proteins. The analysis of *C. elegans* body mechanics suggests that shell mechanics dominates stiffness rather than hydrostatic pressure. We also conducted the behavioral response of *C. elegans* to touch stimuli by utilizing the system in force-clamping mode. We applied a 100 nN to 10 mN force to freely-moving wild type and *mec-4* mutant which has loss of touch receptor neuron. The behavioral result agrees with our prior in-vivo work which suggests that electrical responses of wild type to touch saturate near a force threshold, between 100nN and 1mN. These studies form a part of the bigger puzzle of how body mechanics affect locomotion and force sensing. -------------- next part -------------- An HTML attachment was scrubbed... URL: From gsosa at stanford.edu Mon Mar 16 10:30:31 2009 From: gsosa at stanford.edu (Gary J Sosa) Date: Mon, 16 Mar 2009 10:30:31 -0700 (PDT) Subject: Free Electro-mechanical Components In-Reply-To: <29180786.3238901237224416961.JavaMail.root@zm08.stanford.edu> Message-ID: <1662533972.3240121237224631435.JavaMail.root@zm08.stanford.edu> Hi All... The SNF lab is in process of removing and discarding a vintage tool from the lab.The system is a Nikon body 4 wafer stepper. Before we dispose of it, we are offering up any components that may be of use to the engineering community. Here is a list if items that can be salvaged and reused: 1. DC Power supplies 2. Cooling fans 3. Interconnect cabling 4. Electronic components 5. Switches, potentiometers, meters. ect.. 6. Miscellaneous hardware These items will be available until Wednesday(3/18) after which we will dispose of them. If you are interested, we are moving the items to the CIS loading dock( Paul G Allen Building ) for your viewing. It is your responsibility to dis-assemble and remove any parts that you want, or make other arrangements as needed. However, Wednesday is the deadline and all will be gone. There may be more available at a later date as we are still de-installing and removing the main body of the tool. Items may include optically flat granite surface, interferometer system, miscellaneous optical components, electro-mechanical subsystems. If you are interested, please stop be the CIS loading dock and have a look. The items will be marked "Free Stuff". If you have any questions, get a hold of Gary( 5-1685) or Mario( 5-5538) and we will happy to point out the items. Thanks... Gary From ahryciw at stanford.edu Mon Mar 16 11:24:42 2009 From: ahryciw at stanford.edu (Aaron Hryciw) Date: Mon, 16 Mar 2009 11:24:42 -0700 Subject: Spin-on dopants Message-ID: <4d36fb940903161124g335007a0p5c0da40b4011d07@mail.gmail.com> Hello, Does anyone have experience with phosphorus-containing spin-on dopants? I want to make an ohmic contact to n-type Si (P-doped, ~10^15 cm^-3), so I would like to bring up my doping levels to >10?19 cm^-3 under my contacts. I would greatly appreciate any advice you can give me regarding suppliers and/or recipes that have produced good results at SNF. Cheers! ? Aaron -- Dr. Aaron Hryciw Postdoctoral Scholar Geballe Laboratory for Advanced Materials Stanford University 476 Lomita Mall (04-490) McCullough Building, Rm. 325 Stanford, CA 94305-4045 Tel.: (650) 723-5840 Fax.: (650) 736-1984 -------------- next part -------------- An HTML attachment was scrubbed... URL: From kenney at slac.stanford.edu Mon Mar 16 11:30:15 2009 From: kenney at slac.stanford.edu (Chris Kenney) Date: Mon, 16 Mar 2009 11:30:15 -0700 (PDT) Subject: Spin-on dopants In-Reply-To: <4d36fb940903161124g335007a0p5c0da40b4011d07@mail.gmail.com> References: <4d36fb940903161124g335007a0p5c0da40b4011d07@mail.gmail.com> Message-ID: Hi Aaron, Can you use the gaseous doping tubes: tylan5 and tylan6? Your wafers must be CMOS-clean to use these tubes. Chris On Mon, 16 Mar 2009, Aaron Hryciw wrote: > Hello, > > Does anyone have experience with phosphorus-containing spin-on dopants? I > want to make an ohmic contact to n-type Si (P-doped, ~10^15 cm^-3), so I > would like to bring up my doping levels to >10?19 cm^-3 under my contacts. > I would greatly appreciate any advice you can give me regarding suppliers > and/or recipes that have produced good results at SNF. > > Cheers! > > ? Aaron > > > -- > Dr. Aaron Hryciw > Postdoctoral Scholar > Geballe Laboratory for Advanced Materials > Stanford University > 476 Lomita Mall (04-490) > McCullough Building, Rm. 325 > Stanford, CA 94305-4045 > > Tel.: (650) 723-5840 > Fax.: (650) 736-1984 > From jcdoll at stanford.edu Mon Mar 16 11:59:57 2009 From: jcdoll at stanford.edu (Joey Doll) Date: Mon, 16 Mar 2009 11:59:57 -0700 Subject: Spin-on dopants In-Reply-To: References: <4d36fb940903161124g335007a0p5c0da40b4011d07@mail.gmail.com> Message-ID: <945664f50903161159g1fe81a04g4170d937f9773370@mail.gmail.com> I emailed Aaron separately, but in case anyone else is interested before I have a chance to post this to the wiki, here are spreading resistance analysis profiles for 800C/35min and 850C/15min in tylan6. You can obtain very highly doped n-type silicon and use thermal oxide (500A-1000A thick) in order to mask the diffusion to selectively dope regions of your wafer, then remove the POCl3 and oxide with a quick HF dip afterwards. - joey On Mon, Mar 16, 2009 at 11:30 AM, Chris Kenney wrote: > Hi Aaron, > > Can you use the gaseous doping tubes: tylan5 and tylan6? Your > wafers must be CMOS-clean to use these tubes. > > Chris > > On Mon, 16 Mar 2009, Aaron Hryciw wrote: > > Hello, >> >> Does anyone have experience with phosphorus-containing spin-on dopants? I >> want to make an ohmic contact to n-type Si (P-doped, ~10^15 cm^-3), so I >> would like to bring up my doping levels to >10?19 cm^-3 under my contacts. >> I would greatly appreciate any advice you can give me regarding suppliers >> and/or recipes that have produced good results at SNF. >> >> Cheers! >> >> ? Aaron >> >> >> -- >> Dr. Aaron Hryciw >> Postdoctoral Scholar >> Geballe Laboratory for Advanced Materials >> Stanford University >> 476 Lomita Mall (04-490) >> McCullough Building, Rm. 325 >> Stanford, CA 94305-4045 >> >> Tel.: (650) 723-5840 >> Fax.: (650) 736-1984 >> >> -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: figure1.png Type: image/png Size: 48110 bytes Desc: not available URL: From jcdoll at stanford.edu Mon Mar 16 16:02:27 2009 From: jcdoll at stanford.edu (Joey Doll) Date: Mon, 16 Mar 2009 16:02:27 -0700 Subject: Missing jacket Message-ID: <945664f50903161602t27d76ff4j84faa23904474e7d@mail.gmail.com> Sorry for the spam, but I think someone accidentally grabbed my jacket from outside the gowning room today. If you get home and have a new blue sweatshirt with a zipper, shoot me an email. Thanks! - joey -------------- next part -------------- An HTML attachment was scrubbed... URL: From eunjik at stanford.edu Tue Mar 17 08:28:08 2009 From: eunjik at stanford.edu (Eun Ji Kim) Date: Tue, 17 Mar 2009 08:28:08 -0700 Subject: Eun Ji Kim's Dissertation Defense Thursday 3/19 2pm Packard 202 Message-ID: <3660b4d00903170828y357548cdlbe7c1e942942c95e@mail.gmail.com> Interface and Defect Study of High Permittivity Dielectrics on Si and III-V semiconductors Eun Ji Kim Advisors: Prof. Paul C. McIntyre Prof. Krishna C. Saraswat Date: Thursday, Mar. 19, 2009 Time: 2:00 PM (Refreshments served at 1:45 PM) Location: Packard Bldg. Rm. 202 In an effort to decrease electronic device dimensions and improve device performance, high permittivity dielectrics have been introduced to metal-oxide-semiconductor field effect transistors (MOSFETs). Even though replacing SiO2 with high permittivity dielectrics enabled aggressive device scaling, however, the introduction of new materials gave rise to fundamental problems that could lead to device performance degradation, such as reduction of the effective carrier channel mobility and threshold voltage instabilities. Unsatisfied dangling bonds at the interface of the high permittivity dielectrics and Si, intrinsic and extrinsic point defects in high permittivity dielectrics, and remote phonon scattering are believed to cause degradation of device performance. To understand the limitations to the performance of MOSFETs with high permittivity dielectrics, it is critical to probe phonon modes and defect states directly in high-k dielectrics. Inelastic electron tunneling spectroscopy (IETS) is employed to study soft phonon modes and defect states in HfO2 grown by atomic layer deposition (ALD) on Si. Observed spectral features suggest that monoclinic- and tetragonal- HfO2 vibrational modes exist in the annealed HfO2 while crystalline HfO2 vibrational modes are not detected in the as-deposited samples, consistent with selective area electron diffraction analysis. In addition to soft phonon modes of HfO2, changes in amplitude and energy of spectral features were observed as the bias condition changes. We attribute these features to defect-related states in HfO2 and analyze them in terms of electron energy states in the HfO2 bandgap and reported oxygen vacancy states in HfO2. For further device scaling, III-V compound semiconductors are receiving increasing attention for channel replacement in the metal-oxide-semiconductor (MOS) technology beyond 22 nm node because of their high intrinsic electron mobility. Unlike SiO2 that exhibits excellent passivating properties on Si with low interface state densities, there typically exists a large density of defect states at the interface of III-V semiconductors and their native oxides. Previous research on GaAs showed that less than 1 % of a monolayer of chemisorbed O2 can pin the Fermi level at the semiconductor surface. Therefore, suppressing oxidation of the III-V semiconductors? surface prior to and during gate dielectric deposition could be essential to achieving device performance superior to that of silicon in nanoscale devices. Several different approaches have been demonstrated to prepare III-V semiconductor-based MOS devices. However, previously attempted methods resulted in frequency-dependent flat band voltage (Vfb) shift, charge trapping in the dielectrics and a relatively high density of interface trap states, possibly from unintentional oxidation of the III-V channel. We used In0.53Ga0.47As (100) channels that were capped with an arsenic layer after channel epitaxial growth to avoid III-V oxidation during exposure of the samples to air. The As capping layer was thermally desorbed in-situ in a load-locked ALD reactor prior to Al2O3 gate dielectric deposition. By preventing subcutaneous oxidation of the channel surface, we obtained unpinned Al2O3/In0.53Ga0.47As interfaces with a low density of interface states. The C-V characteristics show a hysteresis of less than 40 mV and relatively small frequency dispersion in accumulation. The surface potential swing (0.44~1.2 eV) calculated using the Berglund integral suggests the absence of a high density of midgap interface states. The observation of near-ideal flat band voltage values for Pt- and Al-electroded MOS capacitors indicates the absence of a significant interface dipole. The temperature-independence of the frequency dispersion of the accumulation capacitance and its scaling with measurement frequency are consistent with tunneling of carriers into defects in the Al2O3 layer, border traps. This also indicates a low interface state density for these devices. -------------- next part -------------- An HTML attachment was scrubbed... URL: From shinbh93 at stanford.edu Wed Mar 18 15:56:53 2009 From: shinbh93 at stanford.edu (Byungha Shin) Date: Wed, 18 Mar 2009 15:56:53 -0700 Subject: Pt paste In-Reply-To: <4d36fb940903161124g335007a0p5c0da40b4011d07@mail.gmail.com> References: <4d36fb940903161124g335007a0p5c0da40b4011d07@mail.gmail.com> Message-ID: <4414DD2530254D988B966F165CAC38FD@ByunghaShin> Hi, Is there anyone who has Pt paste (or Au paste) and is willing to give some to me? The total quantity that I need is small; I just need to paint over an area smaller than 1.5 cm^2. Thanks, Byungha -------------- next part -------------- An HTML attachment was scrubbed... URL: From akamath at kovio.com Thu Mar 19 11:29:41 2009 From: akamath at kovio.com (Arvind Kamath) Date: Thu, 19 Mar 2009 11:29:41 -0700 Subject: TMAH/KOH etch stop on SiO2 Message-ID: <0A734412B02624499172B7366A97336B1BFDCAFEFB@server.print-this.com> Hello, I have a question about using TMAH/KOH as a (poly)silicon blanket etch and its ability to stop on a thin doped oxide without attacking silicon below the doped oxide. Does TMAH/KOH etch n-doped oxide? If so are there ways around this? Insights would be appreciated. Is there a silicon etch which can stop on a thin n-doped SIO2? Thanks! Arvind Kamath -------------- next part -------------- An HTML attachment was scrubbed... URL: From kuanlinc at stanford.edu Thu Mar 19 13:13:05 2009 From: kuanlinc at stanford.edu (Kuan-Lin Chen) Date: Thu, 19 Mar 2009 13:13:05 -0700 Subject: Fwd: IMAPS Northern California Chapter, Lunch Presentation on April 1 References: <0BA12EB201B28648BC7E58F76B3B88E401036287@IMAPSSERVER.intmicropacksociety.local> Message-ID: FYI. Begin forwarded message: > From: "Steve Greene" > Date: March 19, 2009 11:15:35 AM PDT > To: undisclosed-recipients:; > Subject: IMAPS Northern California Chapter, Lunch Presentation on > April 1 > > > > > > > > > > > > > > IMAPS Northern California Chapter > > Wednesday, April 1, 2009 at 11:30 > Please join us for a technical presentation and lunch. > > The speaker is Mr. Marc Robinson of Vertical Circuits, Inc. His > presentation on "Conductive Polymer Interconnects for Low Cost Chip > Scale Packages" will review the characteristics of conductive > polymers used for chip and package interconnections that can be > built without wire bonds. > Mr. Robinson is an industry veteran with significant experience not > only of technology development, but also in business-IP aspects. > > > We would appreciate your forwarding this announcement to any of your > colleagues and friends who you think might be interested. > > > This lunch meeting will be held at The Lookout, 605 Macara Avenue, > Sunnyvale, CA 94086. Please note that this is a new location. > Please respond to Gina Love at glove at cctlaser.com to make your lunch > reservations by Friday, March 27. > > > We look forward to seeing you at this event. > > > Best Regards, > > Guna Selvaduray > San Jose State University > gunas at email.sjsu.edu > Phone: (408) 924-3874 > > To unsubscribe from these member e-mails, please reply with > UNSUBSCRIBE in the subject line. > > -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.gif Type: image/gif Size: 2129 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image002.gif Type: image/gif Size: 170 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image003.gif Type: image/gif Size: 73 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image004.jpg Type: image/jpeg Size: 2621 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image005.gif Type: image/gif Size: 31122 bytes Desc: not available URL: From erhan.ata at gmems.com Thu Mar 19 13:15:51 2009 From: erhan.ata at gmems.com (Erhan Ata) Date: Thu, 19 Mar 2009 13:15:51 -0700 (PDT) Subject: HF etch rate of PECVD SiN Message-ID: <344426.75027.qm@web1007.biz.mail.sp1.yahoo.com> Dear all, I was wondering if anybody studied concentrated HF etch rate of PECVD SiN films at SNF or elsewhere. Specifically I would like to know what range of minimum etch rate we can expect with a recipe limited to ~400 C temp range. Etch rates in BOE will give some hint as well. Also, any information on correlation between etch rate and process parameters (freequency, prsessure, gas ratios etc,) or other measurable physical parameters (e.g refractive index, stress) would be very useful. Best regards, Erhan Ata General MEMS Corp. -------------- next part -------------- An HTML attachment was scrubbed... URL: From rschaevitz at stanford.edu Fri Mar 20 10:31:11 2009 From: rschaevitz at stanford.edu (Rebecca Schaevitz) Date: Fri, 20 Mar 2009 10:31:11 -0700 Subject: Deadline TODAY 11:59pm: Retreat Sign Ups for SUPR 2009 Message-ID: <975904830903201031g29802c61uba75bba3472694c7@mail.gmail.com> There are only a very few spots left for this amazing retreat in Monterey in *the best* hotel in the area. *Posters can easily be from your most recent conference, so don't delay in registering today!* ( http://supr.stanford.edu/registration/) (Poster submission Titles and authors not required until March 27). Currently, we have people from very diverse fields making this a truly unique opportunity to collaborate with students in departments such as Chemistry, Biology, Material Science, Physics, Applied Physics and EE. Sign up now to reserve your spot before they are all filled! [image: SUPR 2009 Flyer] *If you cannot view the above announcement, you may access it at http://supr.stanford.edu/SUPR_2009_Flyer* -- -------------------------------------------------- Meredith M. Lee Stanford University Ph.D. Candidate, Dept. of Electrical Engineering President, Stanford Student OSA/SPIE Center for Integrated Systems 420 Via Ortega, Stanford, CA 94305-4075 Fax: (650) 723-4659 mmlee at stanford.edu -- Sara Charbonneau-Lefort ------------------------------------ Assistant Director Stanford Photonics Research Center ph: 650-723-5627 fax: 650-725-1822 http://photonics.stanford.edu --------------------------------------------------------- -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: not available Type: image/jpeg Size: 111080 bytes Desc: not available URL: From mtang at stanford.edu Fri Mar 20 16:18:35 2009 From: mtang at stanford.edu (Mary Tang) Date: Fri, 20 Mar 2009 16:18:35 -0700 Subject: Process Clinic, Monday, 3/23, 2-4 pm Message-ID: <49C4244B.9010005@stanford.edu> Hi all -- The next Process Clinic will take place this Monday, March 23, from 2-4 pm, in the cubicle area near Maureen's office. Bring your process flows, your layouts, your wackiest ideas. It'll be fun. Your SNF Staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From rissman at stanford.edu Tue Mar 24 08:44:53 2009 From: rissman at stanford.edu (Paul Rissman) Date: Tue, 24 Mar 2009 08:44:53 -0700 Subject: ASML Customer Workshop at SNF - Tuesday, March 31, 2009 - 12 noon to 5 pm Message-ID: <20090324154456.A1AE537D1F@smtp-roam.stanford.edu> Reminder - register by Friday if you would like to attend this workshop. ----------------------------------------------------------------------------------------------------------------------------------------- On behalf of ASML and Keith Best, you are invited to their Customized Imaging Solutions customer workshop on Tuesday, March 31, 2009 from 12 noon to 5 pm. In order to get a proper count for the lunch ASML is providing, please register at: http://www.surveymonkey.com/s.aspx?sm=fJEcP3GkvBdm3b_2bFqy5Mjg_3d_3d > >---------- >From: ASML CIS [mailto:michael.pullen at asml.com] >Sent: Wednesday, March 04, 2009 12:37 PM >To: Keith Best >Subject: ASML CIS Customer Workshop at Stanford Nanofabrication Facility (SNF) > >[] > >[] > >[] > >ASML CIS Customer Workshop at Stanford Nanofabrication Facility (SNF) > >Please Register to Attend >Agenda >12:00 PM Lunch > >1:00 PM Welcome & Introduction - Keith Best (ASML) >1:10 PM MEMS Market and ASML Solutions - Keith Best (ASML) >1:40 PM Recent results from Stanford/ASML - JDA Paul Rissman (SNF) >2:10 PM Canadian Photonics Fabrication Center's >approach to patterning - Simon Wingar (CPFC) >2:30 PM GE - ASML small piece handling project - Keith Best (ASML) >2:50 PM Quick-turn device development w/ASML's >compound image design software (CID)- Paul Schuele (Sharp) > >3:10 PM Coffee Break > >3:30 PM ASML CIS demo update - Vinny Pici (ASML) >4:00 PM TFH market and ASML solutions - Keith Best (ASML) >4:30 PM Leveraging Lithography Toolsets in a >Development Foundry-SVTC - Mary Zawadzki(SVTC) > >5:00 PM Close > >Please respond by filling out the registration form. >Go >to Registration Form > > >Date: Tuesday, March 31st >Time: 12:00 PM - 5:00 PM >Location: SNF Auditorium, Paul Allen Center for >Integrated Systems (CIS) Extension >Visitor Information > >? Copyright 2009 (ASML) All rights reserved | >ASML Netherlands B.V., De Run 6501, 5503 LA Veldhoven, The Netherlands > >Legal >Terms and Conditions | >Privacy Policy > >-- The information contained in this >communication and any attachments is >confidential and may be privileged, and is for >the sole use of the intended recipient(s). Any >unauthorized review, use, disclosure or >distribution is prohibited. Unless explicitly >stated otherwise in the body of this >communication or the attachment thereto (if >any), the information is provided on an AS-IS >basis without any express or implied warranties >or liabilities. To the extent you are relying on >this information, you are doing so at your own >risk. If you are not the intended recipient, >please notify the sender immediately by replying >to this message and destroy all copies of this >message and any attachments. ASML is neither >liable for the proper and complete transmission >of the information contained in this >communication, nor for any delay in its receipt. -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: 27c33f.gif Type: image/gif Size: 18387 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: 27c349.gif Type: image/gif Size: 10662 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: 27c349.jpg Type: image/jpeg Size: 7358 bytes Desc: not available URL: From mbaran at stanford.edu Tue Mar 24 09:08:23 2009 From: mbaran at stanford.edu (Maureen Baran) Date: Tue, 24 Mar 2009 09:08:23 -0700 Subject: 1/2 OFF Bake Sale in the Breakroom at 9:30A Message-ID: <001901c9ac9a$c230aa00$4691fe00$@edu> Dear All, We had a lot of contributors to our bake sale yesterday and we have some great inventory left. Please come down to the breakroom at 9:30 this morning and get some bake goods for ? off while they last. Thank you for your wonderful support, Maureen Maureen Baran Stanford Nanofabrication Facility Lab Services Administrator mbaran at stanford.edu 650-725-3664 -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Wed Mar 25 16:47:52 2009 From: mtang at stanford.edu (Mary Tang) Date: Wed, 25 Mar 2009 16:47:52 -0700 Subject: Labmembers' Meeting, Friday, March 27, 1 pm Message-ID: <49CAC2A8.9000403@stanford.edu> Greetings Labmembers -- There will be a Labmembers' Meeting this Friday, March 27, at 1 pm in the CISX Auditorium. On the agenda: Lab and Quality Circle Updates, including a discussion of the innotec. Be there or be... unaware... Your SNF Staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mihuhou at stanford.edu Wed Mar 25 21:30:14 2009 From: mihuhou at stanford.edu (Ying Chen) Date: Wed, 25 Mar 2009 21:30:14 -0700 Subject: Does any one have TMAOH (tetramethylammonium hydroxide)? Message-ID: <014801c9adcb$8f158b90$4d6318ac@stanford.edu> Can I borrow a little or can you give me some ordering information? Thanks! Ying -------------- next part -------------- An HTML attachment was scrubbed... URL: From mihuhou at stanford.edu Wed Mar 25 21:31:31 2009 From: mihuhou at stanford.edu (Ying Chen) Date: Wed, 25 Mar 2009 21:31:31 -0700 Subject: CD-26 resist developer. Fw: Does any one have TMAOH (tetramethylammonium hydroxide)? Message-ID: <015401c9adcb$bd476970$4d6318ac@stanford.edu> It's also called CD-26 resist developer. Thank you! Ying ----- Original Message ----- From: Ying Chen To: labmembers at snf.stanford.edu Sent: Wednesday, March 25, 2009 9:30 PM Subject: Does any one have TMAOH (tetramethylammonium hydroxide)? Can I borrow a little or can you give me some ordering information? Thanks! Ying -------------- next part -------------- An HTML attachment was scrubbed... URL: From gsosa at stanford.edu Fri Mar 27 15:23:35 2009 From: gsosa at stanford.edu (Gary J Sosa) Date: Fri, 27 Mar 2009 15:23:35 -0700 (PDT) Subject: Microscope Update 3/27/09 In-Reply-To: <745720219.151871238192557902.JavaMail.root@zm08.stanford.edu> Message-ID: <1133866532.152011238192615293.JavaMail.root@zm08.stanford.edu> Hi Labmembers... Just a quick microscope update: 1. The microscope in diffusion that was sent out for repair is back and re-installed/tested. The only thing thjat does not work is the video camera. It appears that the computer hard disk is corrupted or crashed. We either get the blue screen or "invalid harddisk error. Still need to investigate and repair. Microscope OK to use. 2. The microscope in litho, across from the granite has been removed and sent out for repair. We have installed a temporary microscope in its place. The video camera is also installed on the microscope and is functional. ..Gary From mustafeez27 at stanford.edu Sat Mar 28 16:57:53 2009 From: mustafeez27 at stanford.edu (Waqas Mustafeez) Date: Sat, 28 Mar 2009 16:57:53 -0700 Subject: SiC films Message-ID: Is there a CVD system at SNF for SiC film deposition? Any information on how to deposit SiC and Si rich SiC films would be welcome Thanks WM. ------------------------------------------------------- PhD Candidate, Salleo Research Group, Electrical Engineering, Stanford, CA -------------- next part -------------- An HTML attachment was scrubbed... URL: From gthareja at stanford.edu Mon Mar 30 00:41:35 2009 From: gthareja at stanford.edu (Gaurav Thareja) Date: Mon, 30 Mar 2009 00:41:35 -0700 (PDT) Subject: wafer sawing Message-ID: <1968214001.193861238398895991.JavaMail.root@zm06.stanford.edu> Dear Lab members Please let me know of a company, which can 1. Cut a 12 inch wafer into a few 4 inch wafers. 2. Cut a 12 inch wafer into 2 cm X 2cm square pieces. 3. Cut a 4 inch wafer into 2 cm X 2cm square pieces. please let me know thanks ~gaurav From rissman at stanford.edu Tue Mar 31 09:05:03 2009 From: rissman at stanford.edu (Paul Rissman) Date: Tue, 31 Mar 2009 08:05:03 -0800 Subject: ASML Customer Workshop at SNF - Tuesday, March 31, 2009 - 12 noon to 5 pm Message-ID: <20090331150511.17EBF78089@smtp-roam.stanford.edu> Reminder - today. ----------------------------------------------------------------------------------------------------------------------------------------- On behalf of ASML and Keith Best, you are invited to their Customized Imaging Solutions customer workshop on Tuesday, March 31, 2009 from 12 noon to 5 pm. In order to get a proper count for the lunch ASML is providing, please register at: http://www.surveymonkey.com/s.aspx?sm=fJEcP3GkvBdm3b_2bFqy5Mjg_3d_3d > >---------- >From: ASML CIS [mailto:michael.pullen at asml.com] >Sent: Wednesday, March 04, 2009 12:37 PM >To: Keith Best >Subject: ASML CIS Customer Workshop at Stanford Nanofabrication Facility (SNF) > >[] > >[] > >[] > >ASML CIS Customer Workshop at Stanford Nanofabrication Facility (SNF) > >Please Register to Attend >Agenda >12:00 PM Lunch > >1:00 PM Welcome & Introduction - Keith Best (ASML) >1:10 PM MEMS Market and ASML Solutions - Keith Best (ASML) >1:40 PM Recent results from Stanford/ASML - JDA Paul Rissman (SNF) >2:10 PM Canadian Photonics Fabrication Center's >approach to patterning - Simon Wingar (CPFC) >2:30 PM GE - ASML small piece handling project - Keith Best (ASML) >2:50 PM Quick-turn device development w/ASML's >compound image design software (CID)- Paul Schuele (Sharp) > >3:10 PM Coffee Break > >3:30 PM ASML CIS demo update - Vinny Pici (ASML) >4:00 PM TFH market and ASML solutions - Keith Best (ASML) >4:30 PM Leveraging Lithography Toolsets in a >Development Foundry-SVTC - Mary Zawadzki(SVTC) > >5:00 PM Close > >Please respond by filling out the registration form. >Go >to Registration Form > > >Date: Tuesday, March 31st >Time: 12:00 PM - 5:00 PM >Location: SNF Auditorium, Paul Allen Center for >Integrated Systems (CIS) Extension >Visitor Information > >? Copyright 2009 (ASML) All rights reserved | >ASML Netherlands B.V., De Run 6501, 5503 LA Veldhoven, The Netherlands > >Legal >Terms and Conditions | >Privacy Policy > >-- The information contained in this >communication and any attachments is >confidential and may be privileged, and is for >the sole use of the intended recipient(s). Any >unauthorized review, use, disclosure or >distribution is prohibited. Unless explicitly >stated otherwise in the body of this >communication or the attachment thereto (if >any), the information is provided on an AS-IS >basis without any express or implied warranties >or liabilities. To the extent you are relying on >this information, you are doing so at your own >risk. If you are not the intended recipient, >please notify the sender immediately by replying >to this message and destroy all copies of this >message and any attachments. ASML is neither >liable for the proper and complete transmission >of the information contained in this >communication, nor for any delay in its receipt. -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: 6c441.gif Type: image/gif Size: 18387 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: 6c455.gif Type: image/gif Size: 10662 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: 6c45f.jpg Type: image/jpeg Size: 7358 bytes Desc: not available URL: From maloney1 at stanford.edu Tue Mar 31 14:16:26 2009 From: maloney1 at stanford.edu (Michael Maloney) Date: Tue, 31 Mar 2009 14:16:26 -0700 (PDT) Subject: Resist swap Message-ID: <1806794742.476241238534186560.JavaMail.root@zm07.stanford.edu> I have an unopened 500mL bottle of SU8-2010 that I am willing to trade for some SU8-2050. Anyone interested please contact me (maloney1) at the following e-mail address: maloney1 at stanford.edu Mike Michael T. Maloney Postdoctoral Scholar Department of Neurology and Neurological Sciences Stanford University School of Medicine P222 MSLS ph: (650) 498-8112 From ehe at stanford.edu Tue Mar 31 15:15:10 2009 From: ehe at stanford.edu (Elizabeth Edwards) Date: Tue, 31 Mar 2009 15:15:10 -0700 Subject: CMP papers? Message-ID: Dear Labmembers, Has anyone heard of, or published, papers with examples of novel CMP usage in the last few years? Someone I know is writing a journal review and would like input from the SNF community. Thanks! Liz ehe at stanford.edu From mbaran at stanford.edu Tue Mar 31 16:52:57 2009 From: mbaran at stanford.edu (Maureen Baran) Date: Tue, 31 Mar 2009 16:52:57 -0700 Subject: Breast Cancer 3-Day Walk (fwd) Message-ID: <001f01c9b25b$d1751890$745f49b0$@edu> Dear Friends, This year, I'll be participating in a very special event called the Breast Cancer 3-Day. I'll walk 60 miles over the course of three days with thousands of other women and men. The net proceeds will support breast cancer research, education, screening and treatment through Susan G. Komen for the Cure and the National Philanthropic Trust Breast Cancer Fund. Every advancement in breast cancer research, treatment, education and prevention in the last 25 years has been touched by a Komen for the Cure grant. They are working hard to build a future without breast cancer, and I plan on raising $2,300 to help bring us closer to that goal. I know I can raise even more than that with your help and support. You can donate online at http://www.the3day.org/. Just click on Donate Now and search for my personal fundraising page. Or fill out the enclosed donation form and mail it to the address on the form. You can also call 800.996.3DAY to donate over the phone. This cause means alot to me as I have lost good friends to cancer and seen survivors suffer with this terrible disease. According to Susan G. Komen for the Cure, more than 200,000 American women will be diagnosed with breast cancer this year, and nearly 40,000 will die from the disease. That's why I'm walking so far, to do something bold about breast cancer. I hope that you'll share this incredible adventure with me by supporting me in my fundraising efforts. Because everyone deserves a lifetime. Thank you for taking the time to read this letter, and thank you in advance for your generosity! Sincerely, Jasmine Hasi P.S. Don't wait - donate today! Please visit The Breast Cancer 3-Day today! Click here to visit my personal page.
If the text above does not appear as a clickable link, you can visit the web address:
http://www.the3day.org/site/TR/Walk/SanFranciscoBayAreaEvent?px=1700145&pg=p ersonal&fr_id=1299&et=-iqJYG6O4RoL-M4zs55ZAA..&s_tafId=84981

Click here to view the team page for Boob Brigade
If the text above does not appear as a clickable link, you can visit the web address:
http://www.the3day.org/site/TR/Walk/SanFranciscoBayAreaEvent?team_id=56820&p g=team&fr_id=1299&et=kL7s8p_-bAJ1ryTW1Iz2mQ..&s_tafId=84981

For more information about the Breast Cancer 3-Day, Susan G. Komen for the Cure or the National Philanthropic Trust Breast Cancer Fund, visit http://www.the3day.org/ or call 800.996.3DAY. -------------- next part -------------- A non-text attachment was scrubbed... Name: donation form.pdf Type: application/pdf Size: 937006 bytes Desc: not available URL: