From mtang at stanford.edu Fri May 1 23:17:14 2009 From: mtang at stanford.edu (Mary Tang) Date: Fri, 01 May 2009 23:17:14 -0700 Subject: Process Clinic, Monday, 5/4, 2 pm Message-ID: <49FBE56A.5020208@stanford.edu> Greetings Labmembers -- Process Clinic, Monday, May 4, 2 pm, in the cubicle area outside Maureen's office. Bring process questions, mask layouts, SpecMat requests. New labmembers are especially encouraged to come and review process flows and runsheets. Staff and experienced labmembers will be on hand for discussion. Your SNF staff From rishi.kant.81 at gmail.com Sun May 3 17:35:14 2009 From: rishi.kant.81 at gmail.com (Rishi Kant) Date: Sun, 03 May 2009 17:35:14 -0700 Subject: Seminar: May 4, Mon 3-4 pm, Prof Shuvo Roy, MEMS for Implantable Diagnostics and Therapy Message-ID: <49FE3842.6040400@gmail.com> BioMEMS Seminar announcement: Monday (May 4) 3:00 - 4:00 pm Paul G. Allen Building, Room 101X Title: MEMS for Implantable Diagnostics and Therapy Speaker: Shuvo Roy, PhD Harry Wm. and Diana V. Hind Distinguished Associate Professor Department of Bioengineering and Therapeutic Sciences University of California, San Francisco Abstract: MEMS (microelectromechanical systems) technology, with its inherent characteristics of batch fabrication, miniaturization, and compatibility with electronics integration, is particularly attractive for the development of next-generation, cost-effective tools for biomedical research and clinical medicine. While a flurry of research activities in the application of MEMS to biomedical problems (bioMEMS) has culminated in some commercialization successes such as microarrays and lab-on-chip in vitro diagnostics, the next decade promises offers even more exciting opportunities for in vivo medical applications. This talk will present examples of on-going research projects in Clinical BioMEMS, including the development of nanoporous membranes for renal replacement therapy, wireless pressure microsensors for spine fusion monitoring, and high resolution ultrasonic microtransducers for vulnerable plaque detection. Bio.: Shuvo Roy, Ph.D. was recently appointed as Associate Professor of Bioengineering and Therapeutic Sciences at the University of California, San Francisco (UCSF). Previously, he was Co-Director of the BioMEMS Laboratory in the Department of Biomedical Engineering at the Cleveland Clinic in Cleveland, OH. He received a B.S. degree, Magna Cum Laude, with General Honors for triple majors in Physics, Mathematics (Special Honors), and Computer Science from Mount Union College, Alliance, OH in 1992. He received the M.S. in Electrical Engineering and Applied Physics and Ph.D. degrees in Electrical Engineering and Computer Science from Case Western Reserve University, Cleveland, OH in 1995 and 2001, respectively. Dr. Roy serves on the editorial board of the following peer-reviewed journals: Biomedical Microdevices and Sensors & Materials. He has contributed more than 85 technical publications, coauthored 3 book chapters, awarded 14 U.S. patents, and given more than 50 invited presentations. At UCSF, he is building a research and training program to focus on the development of MEMS for medicine. From rparsa at stanford.edu Wed May 6 08:24:09 2009 From: rparsa at stanford.edu (Roozbeh Parsa) Date: Wed, 6 May 2009 08:24:09 -0700 (PDT) Subject: Reminder: MEMS Seminar, TODAY: Ultra-High Density MEMS-based Probe Storage, 4-5m in Allen-101X In-Reply-To: <610438339.754741241027980352.JavaMail.root@zm06.stanford.edu> Message-ID: <305021252.2019631241623449004.JavaMail.root@zm06.stanford.edu> MEMS Seminar Announcement: ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ Today, May 6th, 2009 4:00 ? 5:00 pm Allen-101X Title: Ultra-High Density MEMS-based Probe Storage Speaker: Dr. Nickolai Belov Nanochip, Inc. Abstract: Nanochip developed a conceptual prototype of a probe storage device (?nanochip?) utilizing a ferroelectric non-volatile memory, which permits robust write, non-destructive read and simple data overwriting operations. Read-write operations require low power and can be performed very fast. The device contains: (a) an electromagnetic X-Y micro-mover featuring a large range of motion, low X-Y cross-talk, long-term stability, excellent shock protection and (b) an array of cantilevers with vertical and lateral electrostatic actuators and with AFM-type sharp tips (read-write heads) built on top of CMOS circuitry (read channel electronics and analog circuits for actuation control) using a low-temperature process. Vertical actuation allows for loading a selected set of tips onto media for read/write operations. Lateral actuators are used for adjusting multiple tips on corresponding data tracks permitting device operation over a wide temperature range. This work shows that significant drawbacks of the earlier probe storage concepts can be overcome and brings this type of memory devices much closer to commercialization. Speaker: Nickolai Belov received the M.S. degree in electronics and Ph.D. in microelectronics from Physics Engineering University, Moscow, Russia, in 1981 and 1989, respectively. He worked in a Sensoelectronics Lab of Physics Engineering University from 1981 to 1996. In 1996 Nickolai moved to US where he worked both for MEMS industry leaders and for startups. He has been involved in a large number of development projects in the areas of mechanical sensors, actuators, optical devices and custom microstructures as well as in support of volume manufacturing of MEMS devices and transferring MEMS devices into production. He is currently a Senior Engineering manager at Nanochip responsible for development of MEMS part of a probe storage device. His areas of expertise are in MEMS design and process development, process integration, testing and packaging of MEMS devices, physics of sensors and actuators. -------------- next part -------------- A non-text attachment was scrubbed... Name: Probe Storage - Nanochip - May2009.doc Type: application/msword Size: 42496 bytes Desc: not available URL: From mbaran at stanford.edu Wed May 6 14:37:53 2009 From: mbaran at stanford.edu (Maureen Baran) Date: Wed, 6 May 2009 14:37:53 -0700 Subject: Found phone by Barlett Printer - Please claim if it belongs to you Message-ID: <000301c9ce92$e99fa270$bcdee750$@edu> A concerned lab member found a cell phone by the Barlett Printer this afternoon - if it is yours please come by cubicle #41 to claim it. Thanks, Maureen Maureen Baran Stanford Nanofabrication Facility Lab Services Administrator mbaran at stanford.edu 650-725-3664 -------------- next part -------------- An HTML attachment was scrubbed... URL: From gthareja at stanford.edu Thu May 7 22:33:30 2009 From: gthareja at stanford.edu (Gaurav Thareja) Date: Thu, 7 May 2009 22:33:30 -0700 (PDT) Subject: [Stanford Nano Society Seminar] Tomorrow 12pm - 1pm, McCullough 115, Mechanical Properties of Small Scale Materials Using Nanoindentation In-Reply-To: <635647079.2452371240523355416.JavaMail.root@zm06.stanford.edu> Message-ID: <607041644.2523311241760810106.JavaMail.root@zm06.stanford.edu> Stanford Nanoscience & Nanotechnology Society Seminar: Mechanical Properties of Small Scale Materials Using Nanoindentation Speaker - Dr. Seung Min Han Bio - Dr. Han graduated with Ph.D. from Dr. William Nix?s group in Materials Science and Engineering in 2006, and joined the MSE department as an Acting Assistant Professor since then. Dr. Han is currently also part of Dr. Yi Cui?s group for in-situ TEM nanoindentation of nanosturctures. Location: McCullough 115 Time: 12:00 noon - 1:00pm Date: May 08(Friday) ? Tomorrow! Abstract: As the dimensions of today?s devices become smaller and smaller, understanding the mechanical properties of materials at sub-micron length scales becomes more challenging. The conventional methods for evaluating strengths of materials in bulk form cannot be applied, and new methodologies are required for accurately evaluating mechanical properties of thin films. In this study, the method of microcompression testing, which involves using a focused ion beam to synthesize sub-micron sized pillars and subsequently testing with a flat punch tip of a nanoindenter, is used to evaluate mechanical properties of Al-Al3Sc multilayers with varying bilayer thicknesses from 6-100nm. The measured yield strengths show the trend of increasing strength with decreasing bilayer period, and agree with the nanoindentation hardness results upon applying the suitable Tabor factor correction. The deformation of the Al-Al3Sc pillars at large strains showed strain softening that causes inhomogeneous deformation. A new model was developed to account for the inhomogeneous geometry to calculate the stress-strain in this regime of strain softening. A TEM study of deformed pillar showed shearing and rotation of layering structure that could be responsible for the observed strain softening behavior. For more information please visit http://nanosociety.stanford.edu ------------------------- Pizzas would be served! -------------------------- All are welcome ! -- Gaurav Thareja Ph.D candidate, Nishi group Electrical Engineering Stanford University 420 Via Palou Mall, CISX 128 Stanford, CA 94305 Tel: 650-704-1029 Email: gthareja at stanford.edu From mtang at stanford.edu Sat May 9 07:47:29 2009 From: mtang at stanford.edu (Mary Tang) Date: Sat, 09 May 2009 07:47:29 -0700 Subject: Venture Clinic with Shahin Farschi, 4:30 Tuesday, May 12 Message-ID: <4A059781.4010000@stanford.edu> So, what's it like in venture these days? Find out, when Shahin Farschi hosts another Venture Clinic session. This will be Tuesday, May 12, at 4:30 pm in the cubicle area outside Maureen's office. Shahin Farshchi is an Associate from Lux Capital. The Venture Clinic which aims to provide an informal forum for researchers interested in brainstorming with a venture capitalist on avenues for commercializing technology, and what to expect when starting a new venture. [Particularly in this economic climate!] Technical discussions should be limited to what has been already disclosed or published. For more information, contact: Shahin Farshchi, Ph.D. Phone: 925.323.2784 Email: shahin.farshchi at luxcapital.com From lxuwind at stanford.edu Mon May 11 11:52:39 2009 From: lxuwind at stanford.edu (Liang Xu) Date: Mon, 11 May 2009 11:52:39 -0700 (PDT) Subject: PhD dissertation defense - Liang Xu In-Reply-To: <2017614825.2793841242067211649.JavaMail.root@zm07.stanford.edu> Message-ID: <1402154294.2797881242067959433.JavaMail.root@zm07.stanford.edu> Stanford University PhD Dissertation Defense Giant Magnetoresistive Sensor for Biomolecule Detection and Cancer Diagnosis Liang Xu Research Advisor: Shan Wang Department of Materials Science and Engineering Monday, May 18, 2009 @ 2:00 pm (refreshments served at 1:40 pm) Location: Packard 202 Abstract: Technology of detecting biomolecules is an integral part of early cancer diagnosis research. Various sensors based on fluorescence, mass, electrical interactions, etc have been developed to detect the cancer biomarkers. In this dissertation, a giant magnetoresistive (GMR) sensor is presented for biomolecule detections. The GMR sensor can detect small changes in local magnetic field. Therefore, if the target biomolecule is labeled with a magnetic nanoparticle and a specific probe is coated on the sensor surface, the target molecule will be captured and when an external magnetic field is applied to magnetize this magnetic nanoparticle, the stray field from the particle can be detected by the GMR sensor. In this dissertation, various components of the GMR sensor technology are described and several examples of the application of the GMR sensor are presented. Compared with other technologies for biomolecule detection, GMR sensor is more sensitive, can be easily integrated with electronics and microfluidics, and can be potentially made portable. In addition, GMR sensor and measurement system is much less expensive than most of other detection methods. Therefore, GMR sensor is a good candidate for detecting biomolecules, in particular, cancer biomarkers. In addition, it is shown in this dissertation that GMR sensor can be used to study the kinetics of biomolecule interactions, and therefore can serve as a complementary technology to Surface Plasmon Resonance (SPR), which is the dominant technology currently used for kinetics measurement. Liang Xu 650-521-3454 lxuwind at stanford.edu From mtang at stanford.edu Mon May 11 16:36:54 2009 From: mtang at stanford.edu (Mary Tang) Date: Mon, 11 May 2009 16:36:54 -0700 Subject: Venture Clinic Postponed to Thursday, 4:30 Message-ID: <4A08B696.2030601@stanford.edu> //Please note: The Venture Clinic with Shahin Farschi originally scheduled for Tuesday has been postponed to Thursday, May 14, at 4:30 pm. We'll still be in the cubicle area outside Maureen's office./ / ------------------------------------------------------------------------ So, what's it like in venture these days? Find out, when Shahin Farschi hosts another Venture Clinic session. Shahin Farshchi is now a SENIOR Associate from Lux Capital. The Venture Clinic which aims to provide an informal forum for researchers interested in brainstorming with a venture capitalist on avenues for commercializing technology, and what to expect when starting a new venture. [Particularly in this economic climate!] Technical discussions should be limited to what has been already disclosed or published. For more information, contact: Shahin Farshchi, Ph.D. Phone: 925.323.2784 Email: shahin.farshchi at luxcapital.com -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From mbaran at stanford.edu Tue May 12 16:53:11 2009 From: mbaran at stanford.edu (Maureen Baran) Date: Tue, 12 May 2009 16:53:11 -0700 Subject: A Bake Sale is Coming Your Way - Monday, May 18th Message-ID: <003101c9d35c$cebdffa0$6c39fee0$@edu> I know we haven't had a bake sale is a while so, we are having one next Monday, May 18th to help support our famous Lab Member - Jasmine Hasi. She will be walking in the 3 Day Walk for the Cure in October. The bake sale will run from 9:30A until we sell out of ALL bake goods. It will be held in office #145 (Nancy Latta's office) she is out that day. All the proceeds from our bake sale will go towards the 3 day Walk for the Cure. Please come out and support Jasmine or just because you would like to have something homemade instead of something from the vending machine for a change. Thank you for your continued support for a great cause. Maureen Maureen Baran Stanford Nanofabrication Facility Lab Services Administrator mbaran at stanford.edu 650-725-3664 -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Tue May 12 18:26:36 2009 From: mtang at stanford.edu (Mary Tang) Date: Tue, 12 May 2009 18:26:36 -0700 Subject: Special Event: MEMS, Making Micro Machines, 5/20, noon Message-ID: <4A0A21CC.60907@stanford.edu> Dear Labmembers -- SNF and Silicon Run Productions invite you to the world premiere screening of **"MEMS: Making Micro Machines" **which will be held on Wednesday, May 20, at noon, in the Allen 101X Auditorium. Join us in viewing this latest video from Ruth Carranza, well-known for her *"Silicon Run"* series. This event will also feature the short "Nanotechnology: Carbon Nanotube Electronics" by filmmaker, May Lin Au Yong, and our fellow labmember, Albert Lin, showcasing the work of the Wong Lab Nanoelectronics Group . Meet the filmmakers and share in refreshments. All are welcome. -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From dalyx at stanford.edu Wed May 13 19:14:29 2009 From: dalyx at stanford.edu (Dany-Sebastien Ly-Gagnon) Date: Wed, 13 May 2009 19:14:29 -0700 Subject: Lost Karlsuss mask In-Reply-To: <7f014b6b0905131809p66193eb9m950f520d783aacfb@mail.gmail.com> References: <7f014b6b0905131809p66193eb9m950f520d783aacfb@mail.gmail.com> Message-ID: <7f014b6b0905131914k1416f204na5271151b6e291b4@mail.gmail.com> I found my mask in the "lost masks" box close to headway and close to the door. Thanks to Uli for pointing out the location of this lost & found box. Dany On Wed, May 13, 2009 at 6:09 PM, Dany-Sebastien Ly-Gagnon < dalyx at stanford.edu> wrote: > Hi, > > I lost a contact mask for Karlsuss titled "contact_mask". Has anyone found > or seen that mask lying around? > > Thanks, > > Dany > -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Fri May 15 15:31:05 2009 From: mtang at stanford.edu (Mary Tang) Date: Fri, 15 May 2009 15:31:05 -0700 Subject: Process Clinic: Mon 2-4, 5/18 Message-ID: <4A0DED29.8070201@stanford.edu> Greetings Labmembers -- The next Process Clinic will be on, Monday, May 18, at 2 pm, in the cubicle area outside Maureen's office. All labmembers are welcome. Bring process questions, mask layouts, SpecMat requests. New labmembers are especially encouraged to come and review process flows and runsheets. Staff and Keith Best from ASML will be on hand for discussion. Experienced labmembers are also invited to offer advice. Your SNF (and ASML!) staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at stanford.edu Fri May 15 17:59:51 2009 From: mtang at stanford.edu (Mary Tang) Date: Fri, 15 May 2009 17:59:51 -0700 Subject: Please conserve 50:1 HF Use Message-ID: <4A0E1007.3030302@stanford.edu> Dear labmembers: Please conserve your use of 50:1 HF in the lab. Certainly, change acid when the schedule requires it. But please be aware that there is a very, very limited supply available to us right now. No need to panic, as there are other equivalent options, but these will not be the from the same supplier. For those of you interested in the gory details, part of the problem appears to be with the manufacturer, Baker/Mallinkrodt, whose HF process line is down. (This affects only their HF/water mixes; their BOE line is not affected.) The other problem appears to be with the economy, as distributors try to minimize their inventories. Updates on the situation will be posted on the wet bench lists and Coral. Thanks for your attention -- Your SNF Staf -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From ahazeghi at stanford.edu Fri May 15 22:14:59 2009 From: ahazeghi at stanford.edu (Arash Hazeghi) Date: Fri, 15 May 2009 22:14:59 -0700 (PDT) Subject: Pizza in CIS kitchen Message-ID: <161085818.4973381242450899244.JavaMail.root@zm03.stanford.edu> For all hard-working SNF members, there is lots of pizza in CIS kitchen! Enjoy, Arash -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Sat May 16 09:17:09 2009 From: mtang at stanford.edu (Mary Tang) Date: Sat, 16 May 2009 09:17:09 -0700 Subject: Gowning room sliding door problem Message-ID: <4A0EE705.50004@stanford.edu> Hello weekend warriors: It looks like the gowning room sliding door isn't sliding. Labmembers are manually pushing the door to enter and exit the cleanroom. A note has been posted on the door to warn everyone. Because people can still get in and out, this is not considered a safety problem requiring immediate attention, but as I'm sure you know, it's darned inconvenient. The door sensor is suspect. Messages have been left for the Facilities crew, but it is likely they will not be able to address this until Monday morning. Please call the SNF on-call phone if lab access/exit goes from being simply annoying to becoming a real problem. Many apologies for the inconvenience -- Mary .. From lxuwind at stanford.edu Mon May 18 11:03:41 2009 From: lxuwind at stanford.edu (Liang Xu) Date: Mon, 18 May 2009 11:03:41 -0700 (PDT) Subject: Reminder: TODAY@2pm, PhD defense-Liang Xu Message-ID: <156442485.3984111242669821019.JavaMail.root@zm07.stanford.edu> Stanford University PhD Dissertation Defense Giant Magnetoresistive Sensor for Biomolecule Detection and Cancer Diagnosis Liang Xu Research Advisor: Shan Wang Department of Materials Science and Engineering Monday, May 18, 2009 @ 2:00 pm (refreshments served at 1:40 pm) Location: Packard 202 Abstract: Technology of detecting biomolecules is an integral part of early cancer diagnosis research. Various sensors based on fluorescence, mass, electrical interactions, etc have been developed to detect the cancer biomarkers. In this dissertation, a giant magnetoresistive (GMR) sensor is presented for biomolecule detections. The GMR sensor can detect small changes in local magnetic field. Therefore, if the target biomolecule is labeled with a magnetic nanoparticle and a specific probe is coated on the sensor surface, the target molecule will be captured and when an external magnetic field is applied to magnetize this magnetic nanoparticle, the stray field from the particle can be detected by the GMR sensor. In this dissertation, various components of the GMR sensor technology are described and several examples of the application of the GMR sensor are presented. Compared with other technologies for biomolecule detection, GMR sensor is more sensitive, can be easily integrated with electronics and microfluidics, and can be potentially made portable. In addition, GMR sensor and measurement system is much less expensive than most of other detection methods. Therefore, GMR sensor is a good candidate for detecting biomolecules, in particular, cancer biomarkers. In addition, it is shown in this dissertation that GMR sensor can be used to study the kinetics of biomolecule interactions, and therefore can serve as a complementary technology to Surface Plasmon Resonance (SPR), which is the dominant technology currently used for kinetics measurement. Liang Xu 650-521-3454 lxuwind at stanford.edu From jaehlee at stanford.edu Mon May 18 12:38:19 2009 From: jaehlee at stanford.edu (Jae Hyung Lee) Date: Mon, 18 May 2009 12:38:19 -0700 Subject: MEMS & Energy Seminar : Today 3-4 pm Allen(CISX) 101X (Matt Hopcroft, BSAC, UC Berkeley) Message-ID: <124e55220905181238rb2fda84r99de1e1901862c0c@mail.gmail.com> MEMS Seminar Announcement: ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ Monday, May 18, 2009, 3:00 ? 4:00 pm Allen-101X Title: MEMS & Energy Speaker: Matthew Hopcroft, PhD Berkeley Micromechanical Analysis and Design Laboratory Berkeley Sensor and Actuator Center University of California, Berkeley Abstract: Generation and consumption of energy at all scales is one of the most pressing challenges for the current generation of engineers. This talk will discuss the application of MEMS technologies to the future of energy generation and ongoing activities in the Berkeley Sensor & Actuator Center related to energy technologies. Speaker: Matthew A. Hopcroft received the B.Sc. in Computer Engineering from The George Washington University in 1998, the M.Phil. degree from the Engineering Department, Cambridge University in 2002, and the Ph.D. in Mechanical Engineering from Stanford University in 2007. He is currently a Research Specialist affiliated with the Berkeley Micromechanical Analysis and Design group and the Berkeley Sensor and Actuator Center at the University of California at Berkeley. His research interests include MEMS material property measurements, microscale and portable power systems, and micromechanical resonators. -------------- next part -------------- A non-text attachment was scrubbed... Name: HopcroftMA_MEMS_Seminar_May18.pdf Type: application/pdf Size: 236620 bytes Desc: not available URL: From dwitte at stanford.edu Mon May 18 14:03:46 2009 From: dwitte at stanford.edu (Daniel Witte) Date: Mon, 18 May 2009 14:03:46 -0700 Subject: Oral defense announcement - Daniel Witte Message-ID: <8d3fd7200905181403i433bfa9dl4175ab7d384ec71@mail.gmail.com> Rapid laser crystallization of semiconductors for three-dimensional integration Stanford University PhD Dissertation Defense Daniel Witte (dwitte at stanford.edu) Research Advisor: R. Fabian W. Pease Department of Electrical Engineering Time: Tuesday, May 26 @ 9.30 a.m. (refreshments served at 9:00 a.m.) Location: Clark Center S360 (Third floor, through Peet's Coffee & Tea) Abstract: Three-dimensional integration of semiconductor devices can yield advantages in circuit density, power consumption, and speed over conventional integrated circuit (IC) technology in which all transistors are fabricated in one plane. 3D integration allows circuit functions to be split across multiple layers, which ? for certain kinds of circuits ? allows significant reductions in average wire length. Since wires are the dominant factor in determining logic delay, this can result in faster systems. Vertical interconnect densities of more than a million per square millimeter are critical to achieving this advantage, and to do this, a monolithic approach is required where circuit layers are fabricated sequentially on a single wafer. The critical operation is obtaining single-crystal, device-quality semiconductor material on upper circuit layers. We show that, beginning from an amorphous silicon film deposited at low temperature on a silicon dioxide substrate, a rapid laser crystallization process using a 532nm Nd:YAG laser can form preferentially oriented crystals with a <001> out-of-plane orientation. Best results were achieved with pulse lengths 2ms and greater, on a thermally insulating quartz substrate. By patterning the amorphous silicon film into neck structures, a single <001> crystallite can be selected to seed a finger region 10?m in length and several microns wide. Carrier mobility in these crystals can be above 900 cm^2/Vs for electrons and 250 cm^2/Vs for holes, and is comparable to SOI reference material. These regions could be used for fabrication of devices, or as seed material for further crystallization. A technique such as rapid melt growth (RMG) could be used to propagate these crystals over an entire die. Simulation shows that this can be done without damaging circuit layers underneath, by keeping their temperature below 400 degrees Celsius. The combination of preferentially oriented seed crystallization with an RMG approach would allow the fabrication of multiple circuit layers on a single wafer in a sequential, monolithic fashion. -------------- next part -------------- A non-text attachment was scrubbed... Name: Defense announcement.pdf Type: application/pdf Size: 1113312 bytes Desc: not available URL: From shuhu at stanford.edu Tue May 19 11:03:50 2009 From: shuhu at stanford.edu (Shu Hu) Date: Tue, 19 May 2009 11:03:50 -0700 Subject: Van der Pauw method setup Message-ID: <4A12F486.8000306@stanford.edu> Dear all, I plan to measure the sheet resistance using van der Pauw method, with the old probe station in CAD room. However, I was not successful in setting up the analyzer several times. Basically, I want to setup the analyzer to force current and measure voltage from another two probes. I am sure for those of you who has taken EE410 know a lot about this. Could anybody show me the probe station setup? Many thanks, Shu -- Hu Shu, PhD Candidate 476 Lomita Mall, Rm 203 Department of Materials Science and Engineering Stanford University, CA 94305 From gthareja at stanford.edu Tue May 19 10:58:42 2009 From: gthareja at stanford.edu (Gaurav Thareja) Date: Tue, 19 May 2009 10:58:42 -0700 (PDT) Subject: Nano-bio seminar, May 20 (Wed), 4-5p, CIS-101X, Satellite Nanoscopes and Cellular BioASICs for Molecular Medicine In-Reply-To: <880450090.4564281242755910562.JavaMail.root@zm06.stanford.edu> Message-ID: <207596645.4564391242755922172.JavaMail.root@zm06.stanford.edu> Dear all Please plan to attend the Nano-bio seminar on May 20 (Tomorrow) at 4pm in CIS-101X "Satellite Nanoscopes and Cellular BioASICs for Molecular Medicine" Speaker - Luke P. Lee, PhD Lester John and Lynne Dewar Lloyd Distinguished Professor Department of Bioengineering University of California, Berkeley Abstract attached. -- Gaurav Thareja Ph.D candidate, Nishi nano-electronics group Electrical Engineering Stanford University 420 Via Palou Mall, CISX 128 Stanford, CA 94305 Tel: 650-704-1029 Email: gthareja at stanford.edu -------------- next part -------------- A non-text attachment was scrubbed... Name: Satellite Nanoscope & BioASICs for Quantitative Medicine @ Stanford_2009.pdf Type: application/pdf Size: 275419 bytes Desc: not available URL: From rohank at stanford.edu Tue May 19 12:40:44 2009 From: rohank at stanford.edu (Rohan D. Kekatpure) Date: Tue, 19 May 2009 12:40:44 -0700 Subject: PhD. Defense Rohan D. Kekatpure; Friday May 22 @2pm, Room CIS-X Auditorium In-Reply-To: <156442485.3984111242669821019.JavaMail.root@zm07.stanford.edu> References: <156442485.3984111242669821019.JavaMail.root@zm07.stanford.edu> Message-ID: TITLE: Challenges toward realizing silicon-nanocrystal-based lasers and light sources Rohan D. Kekatpure Friday, May 22, 2:00 pm CIS-X 101 ABSTRACT: The past decade has witnessed a dramatic surge in eliciting active optical functionality out of silicon. Following successful realizations of modulators, switches, and detectors, a silicon-based electrically-pumped laser now remains the last challenge in heralding the era of short-distance optical interconnects. In the year 2000, evidence of optical amplification from silicon nanocrystals at visible wavelengths, and Si-nanocrystal-sensitized erbium emission at 1550 nm unlocked an encouraging route to overcome this obstacle. Despite its disruptive technological significance, and the decade long hunt for its realization, why is silicon-nanocrystal laser still an elusive dream? I will address this question by demonstrating how optical microcavities can be used to quantify gain-limiting processes in semiconductor quantum-dot ensembles. Specifically, I will highlight our microcavity-based measurement of absorption processes in silicon nanocrystals at visible and near-infrared wavelengths. Quite surprisingly, we find that silicon nanocrystals show an increased free- carrier absorption compared to bulk silicon. This finding has initiated a rethinking of various existing strategies aimed at obtaining optical amplification from silicon nanocrystals. A hurdle in one path frequently proves to be a stepping stone in another: Can an increased absorption in nanocrystals make them an alternative material to SOI for making low-cost modulation and switching devices? From mtang at stanford.edu Tue May 19 16:36:29 2009 From: mtang at stanford.edu (Mary Tang) Date: Tue, 19 May 2009 16:36:29 -0700 Subject: Reminder: Special Event: MEMS, Making Micro Machines, 5/20, noon Message-ID: <4A13427D.80505@stanford.edu> Dear Labmembers -- SNF and Silicon Run Productions invite you to the world premiere screening of "MEMS: Making Micro Machines" which will be held on Wednesday, May 20, at noon, in the Allen 101X Auditorium. Join us in viewing this latest video from Ruth Carranza, well-known for her *"Silicon Run"* series. This event will also feature the short "Nanotechnology: Carbon Nanotube Electronics" by filmmaker, May Lin Au Yong, and our fellow labmember, Albert Lin, showcasing the work of the Wong Lab Nanoelectronics Group . Meet the filmmakers and share in refreshments. All are welcome. -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From jhpark9 at stanford.edu Wed May 20 17:43:42 2009 From: jhpark9 at stanford.edu (Jin-Hong Park) Date: Wed, 20 May 2009 17:43:42 -0700 Subject: Jin-Hong Park's University Oral Exam Message-ID: <3c5b6fc20905201743q11dcc79bve801112a499d9e84@mail.gmail.com> *Ph.D Dissertation Defense; ?Physics and Technology of Low Temperature Germanium MOSFETs for Monolithic Three Dimensional Integrated Circuits?* *Jin-Hong** Park / Advisor: Prof. Krishna C. Saraswat / Dept. of Electrical Engineering* *Date : 3pm (Refreshments served at 2:30 pm) on 26th May @ location : CISX auditorium* As the minimum feature size of silicon (Si) CMOS devices shrinks to the nanometer regime, device behavior becomes increasingly complex, due to new physical phenomena at short dimensions and fundamental limitations in material properties are reached. One of the techniques that shows promise to overcome this obstacle is the utilization of monolithic three-dimensional integrated circuits (3D-ICs). By stacking devices vertically, it is expected that (1) more functionality can fit into a smaller space and (2) the signal delay and power consumption in the interconnect layers will decrease and bandwidth will increase. The major challenge in fabricating monolithic 3D-ICs is the maximum process temperature limit of 400 ?C in the upper layers of CMOS device processing, due to the fact that higher process temperature would destroy the underlying device and interconnect layers. 1. Single crystalline GeOI growth technique at below 360 ?C First, we have investigated Ni or Au-induced crystallization and lateral crystallization of planar amorphous germanium (?-Ge) on SiO2 at 360 ?Cwithout the deleterious effects of thermally induced self-nucleation. Subsequently, single crystalline Ge growth has been achieved on SiO2 by making dimension of ?-Ge line smaller than the size of grains formed using Ni and Au-induced lateral crystallization at 360 ?C. 2. Low temperature dopants activation technique in Ge Second, we have investigated low temperature boron and phosphorus activation in ?-Ge using the metal-induced crystallization technique. Eight candidates of metals including Pd, Cu, Ni, Au, Co, Al, Pt, and Ti are used to crystallize ?-Ge at low temperatures followed by resistivity measurement, TEM, and XRD analyses, thereby revealing behaviors of the metal-induced dopants activation process where metals react with ?-Ge at a low temperature. It is found that Co achieves the highest B and P activation ratio in Ge below 360 oC with slow diffusion rate. The feasibility of low temperature activation technique has been demonstrated for a Ge gate electrode in a Si P-MOSFET using Schottky Ni (or Co) silicide source/drain. 3. High performance and low temperature Ge CMOS technology Third, we demonstrate high performance n+/p & p+/n junction diodes and N & P-channel Ge MOSFETs, where Ge is heteroepitaxially grown on a Si substrate at sub 360 ?C and the low temperature gate stack comprises of Al/Al2O3/GeO2. Shallow (~100 nm) source/drain junctions with very low series resistivity [5.2?10-4 ?-cm (in n+/p junction) and 1.07?10-3 ?-cm (in p+/n junction) at the lowest point of SRP] and high degree of dopant activation are achieved by Co-induced dopant activation technique. Consequently, high diode and transistor current on/off ratios (~1.1?104 & ~1.13?103 for N-MOSFETs and ~2.1?104 & ~1.09?103 for P-MOSFETs) were obtained in these N & P-channel Ge MOSFETs. These low temperature processes can be utilized to fabricate Ge CMOS devices on upper layers in three-dimensional integrated circuits, where low temperature processing is critical. -------------- next part -------------- An HTML attachment was scrubbed... URL: From arguicha at stanford.edu Wed May 20 17:39:47 2009 From: arguicha at stanford.edu (Alex Richard Guichard) Date: Wed, 20 May 2009 17:39:47 -0700 (PDT) Subject: on-campus or external source for DLTS? Message-ID: <1942952341.4908431242866387761.JavaMail.root@zm06.stanford.edu> Hello all: I was wondering if anyone knew of an on-campus lab or an off-campus service for deep level transient spectroscopy. I am interested in measuring low concentrations of traps in silicon. Thanks for any suggestions! Sincerely, Alex From mtang at stanford.edu Thu May 21 13:07:56 2009 From: mtang at stanford.edu (Mary Tang) Date: Thu, 21 May 2009 13:07:56 -0700 Subject: Stanford ERT Drill, Friday, May 22, 11-3 pm Message-ID: <4A15B49C.4010806@stanford.edu> Greetings Allen building occupants -- The Stanford campus Emergency Response Team will be holding their annual chemical release drill on Friday, May 22, from 11 am - 3 pm. There should be no disruption to general activities in the building, but don't be alarmed at the sight of white-suited people wearing full SCBA units and vehicles with flashing lights, especially in and around the loading dock/receiving areas. Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From rohank at stanford.edu Fri May 22 08:16:16 2009 From: rohank at stanford.edu (Rohan Deodatta Kekatpure) Date: Fri, 22 May 2009 08:16:16 -0700 (PDT) Subject: TODAY: PhD. Defense Rohan D. Kekatpure @2pm, Room CIS-X Auditorium (Refreshments @ 1:45 pm) In-Reply-To: Message-ID: <1645777574.4822591243005376807.JavaMail.root@zm07.stanford.edu> TITLE: Challenges toward realizing silicon-nanocrystal-based lasers and light sources Rohan D. Kekatpure Friday, May 22, 2:00 pm CIS-X 101 Refreshments 1:45 pm ABSTRACT: The past decade has witnessed a dramatic surge in eliciting active optical functionality out of silicon. Following successful realizations of modulators, switches, and detectors, a silicon-based electrically-pumped laser now remains the last challenge in heralding the era of short-distance optical interconnects. In the year 2000, evidence of optical amplification from silicon nanocrystals at visible wavelengths, and Si-nanocrystal-sensitized erbium emission at 1550 nm unlocked an encouraging route to overcome this obstacle. Despite its disruptive technological significance, and the decade long hunt for its realization, why is silicon-nanocrystal laser still an elusive dream? I will address this question by demonstrating how optical microcavities can be used to quantify gain-limiting processes in semiconductor quantum-dot ensembles. Specifically, I will highlight our microcavity-based measurement of absorption processes in silicon nanocrystals at visible and near-infrared wavelengths. Quite surprisingly, we find that silicon nanocrystals show an increased free- carrier absorption compared to bulk silicon. This finding has initiated a rethinking of various existing strategies aimed at obtaining optical amplification from silicon nanocrystals. A hurdle in one path frequently proves to be a stepping stone in another: Can an increased absorption in nanocrystals make them an alternative material to SOI for making low-cost modulation and switching devices? From shott at stanford.edu Fri May 22 10:37:46 2009 From: shott at stanford.edu (John Shott) Date: Fri, 22 May 2009 10:37:46 -0700 Subject: Possible temperature, humidity, or chilled water problems today .... Message-ID: <4A16E2EA.1040000@stanford.edu> An HTML attachment was scrubbed... URL: From sonnyvo at gmail.com Sat May 23 14:26:10 2009 From: sonnyvo at gmail.com (Sonny Vo) Date: Sat, 23 May 2009 14:26:10 -0700 Subject: litho room smell Message-ID: <4A1869F2.4020806@gmail.com> dear all, the litho room (around headway) has a fairly strong resist smell. This was confirmed by several of us...take care From shott at stanford.edu Sat May 23 14:58:45 2009 From: shott at stanford.edu (John Shott) Date: Sat, 23 May 2009 14:58:45 -0700 Subject: litho room smell .... update In-Reply-To: <4A1869F2.4020806@gmail.com> References: <4A1869F2.4020806@gmail.com> Message-ID: <4A187195.10501@stanford.edu> SNF Lab Members: I believe that the smell in the litho area is actually the smell of varnish that is getting pulled into the lab. There is a crew re-varnishing the woodwork at the main entrance to the building. Between about 2 and 2:30 pm they were spraying a fresh coat of varnish with a compressed-air power sprayer ... which was quite smelly in the office areas. They also had opened the front doors to let the smell escape. I suspect that the varnish fumes were going out the front door .... which is very close to the intake to the air system for the cleanroom ... and then getting pulled into the cleanroom. Because the air handler intake closest to the Allen building entrance doors supplies the lithography area close to the headway, I suspect this is why the smell is strongest in that area. In fact, I have gone in to make sure that there is not a resist problem near the headway .... and believe that it is residual varnish that is the source of smell in the area. They are done spraying now and the smell near the freshly varnished area is already noticeably less as the varnish dries. The work crew expects that the varnish should be almost completely dry in another hour or so. These smells can give you a headache. If you find this smell bothersome .... either in the lab or in the offices .... I suggest that you clear out for an hour or two. I fully expect that there will be no noticeable smell by late this afternoon. I apologize that were not aware that this project was going to happen today so that we could have provided some advance warning. Have a good weekend, John > dear all, > the litho room (around headway) has a fairly strong resist smell. This > was confirmed by several of us...take care From dwitte at stanford.edu Fri May 22 15:39:12 2009 From: dwitte at stanford.edu (Daniel Jonathan Witte) Date: Fri, 22 May 2009 15:39:12 -0700 (PDT) Subject: Reminder: Oral defense - Daniel Witte (Tuesday, May 26) In-Reply-To: <415723289.4922411243031931833.JavaMail.root@zm08.stanford.edu> Message-ID: <1642405617.4922451243031952920.JavaMail.root@zm08.stanford.edu> Rapid laser crystallization of semiconductors for three-dimensional integration Stanford University PhD Dissertation Defense Daniel Witte (dwitte at stanford.edu) Research Advisor: R. Fabian W. Pease Department of Electrical Engineering Time: Tuesday, May 26 @ 9.30 a.m. (refreshments served at 9:00 a.m.) Location: Clark Center S360 (Third floor, through Peet's Coffee & Tea) Abstract: Three-dimensional integration of semiconductor devices can yield advantages in circuit density, power consumption, and speed over conventional integrated circuit (IC) technology in which all transistors are fabricated in one plane. 3D integration allows circuit functions to be split across multiple layers, which ? for certain kinds of circuits ? allows significant reductions in average wire length. Since wires are the dominant factor in determining logic delay, this can result in faster systems. Vertical interconnect densities of more than a million per square millimeter are critical to achieving this advantage, and to do this, a monolithic approach is required where circuit layers are fabricated sequentially on a single wafer. The critical operation is obtaining single-crystal, device-quality semiconductor material on upper circuit layers. We show that, beginning from an amorphous silicon film deposited at low temperature on a silicon dioxide substrate, a rapid laser crystallization process using a 532nm Nd:YAG laser can form preferentially oriented crystals with a <001> out-of-plane orientation. Best results were achieved with pulse lengths 2ms and greater, on a thermally insulating quartz substrate. By patterning the amorphous silicon film into neck structures, a single <001> crystallite can be selected to seed a finger region 10?m in length and several microns wide. Carrier mobility in these crystals can be above 900 cm^2/Vs for electrons and 250 cm^2/Vs for holes, and is comparable to SOI reference material. These regions could be used for fabrication of devices, or as seed material for further crystallization. A technique such as rapid melt growth (RMG) could be used to propagate these crystals over an entire die. Simulation shows that this can be done without damaging circuit layers underneath, by keeping their temperature below 400 degrees Celsius. The combination of preferentially oriented seed crystallization with an RMG approach would allow the fabrication of multiple circuit layers on a single wafer in a sequential, monolithic fashion. -------------- next part -------------- A non-text attachment was scrubbed... Name: Defense announcement.pdf Type: application/pdf Size: 1113312 bytes Desc: not available URL: From rparsa at stanford.edu Wed May 27 08:25:50 2009 From: rparsa at stanford.edu (Roozbeh Parsa) Date: Wed, 27 May 2009 08:25:50 -0700 (PDT) Subject: MEMS Seminar, TODAY: Commercializing New Technologies - From Lab to Fab , 4-5pm in Allen-101X In-Reply-To: <477968291.299871243437742543.JavaMail.root@zm06.stanford.edu> Message-ID: <926148933.300371243437950614.JavaMail.root@zm06.stanford.edu> MEMS Seminar Announcement: ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ Today, May 27th, 2009 4:00 ? 5:00 pm Allen-101X (formerly known as CISX-101) Title: Commercializing New Technologies - From Lab to Fab Speaker: Prakash Krishnan Director of Strategic Marketing at SVTC Abstract: As an independent development services company for the commercialization of novel silicon-based technologies, SVTC provides its silicon development customers access to two state-of-the-art, IP-secure development fabs ?in San Jose, California, and Austin, Texas ?with a full complement of 200 mm (8-inch) and 300 mm (12-inch) advanced CMOS and MEMS fabrication equipment, designed to speed the development of best-of-class solutions. From shott at stanford.edu Fri May 29 09:52:02 2009 From: shott at stanford.edu (John Shott) Date: Fri, 29 May 2009 09:52:02 -0700 Subject: New Coral features .... runtime data charts. Message-ID: <4A2012B2.4000805@stanford.edu> An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: moz-screenshot-1.jpg Type: image/jpeg Size: 9545 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: moz-screenshot-4.jpg Type: image/jpeg Size: 23085 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: moz-screenshot-5.jpg Type: image/jpeg Size: 32410 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: moz-screenshot-6.jpg Type: image/jpeg Size: 35317 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: moz-screenshot-7.jpg Type: image/jpeg Size: 32160 bytes Desc: not available URL: From kattsai at stanford.edu Fri May 29 16:16:31 2009 From: kattsai at stanford.edu (Katherine Tsai) Date: Fri, 29 May 2009 16:16:31 -0700 Subject: MEMS & Neuroscience Seminar: Monday June 1st, 4-5 PM, Allen 101X (Wesley Chang, UCSF) Message-ID: <1c62e49d0905291616u5122285bg9dfdff04ce4a70f5@mail.gmail.com> Please forward widely the following seminar announcement: Microdevice Technologies for Neuroscience Wesley Chang, PhD Postdoctoral Researcher Programs in Neuroscience and Bioengineering University of California, San Francisco Abstract: Given the broad efforts to develop MEMS technologies for serving biology, new clinical and research capabilities are becoming available in specialties such as neuroscience. In our own work, we have used novel, MEMS-based microsurgical tools to explore the possibility of repairing nerves by directly reconnecting individual axons, the slender projections from nerve cells that carry signals throughout the nervous system. This capability can only be developed with tools that can operate with microns-scale precision and perform numerous tasks within a confined volume and may provide an important alternative nerve repair strategy to conventional approaches based on stimulating regeneration, which have only seen limited successes. As we continue to develop MEMS-based nerve repair as a clinical application, we have also identified another essential use for microfabrication technology in support basic research in neuroscience. By employing thin film deposition and batch microfabrication methods, we have developed specialized cell culture substrates that can be mass-produced with reliable, high-resolution micropatterning to provide neuroscientists with well-organized neuron cultures that can be arranged into efficient arrays for high-throughput experimentation. While bioengineers have demonstrated numerous methods for micropatterning of cell culture over the years, our new method is user-friendly and can potentially permit widespread adoption of cell micropatterning among biologists and non-engineers. My talk will discuss both of these applications of microtechnology to neuroscience. Bio: Wesley Chang is a postdoctoral researcher in the laboratory of Dr. David Sretavan in the Departments of Ophthalmology and Physiology and Programs in Neuroscience and Bioengineering at UC San Francisco. He received both his Ph.D. and B.S. degrees in Mechanical Engineering at UC Berkeley. Dr. Chang is also a founder of Aperys LLC, a new company that develops research tools for neuroscience and biology. -------------- next part -------------- An HTML attachment was scrubbed... URL: From candacec at stanford.edu Sat May 30 15:55:46 2009 From: candacec at stanford.edu (Candace Chan) Date: Sat, 30 May 2009 15:55:46 -0700 Subject: Ph.D defense Candace K. Chan, Monday June 8 @ 2pm, Braun Lec Message-ID: <4A21B972.2030101@stanford.edu> *One-dimensional nanostructured materials for Li-ion battery and supercapacitor electrodes* Candace K. Chan (Dept. of Chemistry) Adviser: Yi Cui (Dept. of Materials Science & Engineering) Monday, June 8 @ 2 pm (Refreshments served at 1:45 pm) Braun Lecture Hall (Mudd Chemistry Building) Abstract The need for improved electrochemical storage devices has necessitated research on new and advanced electrode materials. One-dimensional nanomaterials such as nanowires, nanotubes, and nanoribbons, can provide a unique opportunity to engineer electrochemical devices to have improved electronic and ionic conductivity as well as electrochemical and structural transformations. Several properties of nanomaterials, including 1) facile strain relaxation and phase transformation, 2) good ionic diffusion, and 3) good electronic conduction are important characteristics that allow for improvements in performance over bulk materials. Several examples of how nanomaterials are being used to improve problems in energy storage will be given, with discussion on fundamental and applied studies at the single nanowire and ensemble level all the way up to the nanocomposite level. A study on the phase transformations in V2O5 nanoribbons during reaction with lithium will be presented, with implications for Li-ion cathodes. Transformation of the V2O5 nanoribbons into the fully lithiated ?-Li3V2O5 phase was found to depend not only on the width but also the thickness of the nanoribbons. For the first time, complete delithiation of ?-Li3V2O5 back to the single-crystalline, pristine V2O5 nanoribbon was observed, indicating a 30% higher energy density. For Li-ion battery anodes, the use of Si and Ge nanowires (NWs) as high capacity replacements for graphite will be discussed. By using a SiNW electrode, a 10X higher specific capacity was achieved. Problems plaguing bulk Si, such as pulverization and poor charge storage retention, were not observed in the SiNWs due to the NWs having improved accommodation of strain and volume expansion. Finally, an entirely printable supercapacitor device will be presented based on high surface area carbons and a flexible, printable silver nanowire-based current collector. These devices demonstrate how nanomaterials can be integrated into a roll-to-roll manufacturing process while still displaying good performance. -- Candace K. Chan Ph.D. Student, Department of Chemistry Stanford University McCullough Building Room 209 476 Lomita Mall Stanford, CA 94305 -------------- next part -------------- An HTML attachment was scrubbed... URL: