From statusd8 at rdagroup.com Fri Aug 6 07:09:22 2010 From: statusd8 at rdagroup.com (Yong Shearer) Date: Fri, 6 Aug 2010 17:09:22 +0300 Subject: Thank you for your payment Message-ID: <8D1A82E8.0551762@rdagroup.com> An HTML attachment was scrubbed... URL: From eperalta at stanford.edu Fri Aug 6 07:35:08 2010 From: eperalta at stanford.edu (Edgar Peralta) Date: Fri, 6 Aug 2010 07:35:08 -0700 Subject: borrowed books from Staff Message-ID: Dear Labmembers, If you've borrowed books from our friendly SNF staff and forgot to return them please do so. Failure to return a borrowed item not only makes the item unavailable to other interested lab users but also makes the staff reluctant to lending their books again. In particular I'm looking to borrow the book "*Fundamentals of Microfabrication*: The Science of Miniaturization" by Marc J. Madou. Our library somehow decided it was a smart idea to withdraw their 3rd copy and the other two are checked out until mid september. Thank you, Edgar -------------- next part -------------- An HTML attachment was scrubbed... URL: From shott at stanford.edu Fri Aug 6 08:02:40 2010 From: shott at stanford.edu (John Shott) Date: Fri, 06 Aug 2010 08:02:40 -0700 Subject: Yesterday's toxic gas alarm .... Message-ID: <4C5C2410.7090801@stanford.edu> SNF Lab Members: As many of you are aware, yesterday morning we had a toxic gas alarm that evacuated the lab and building. We believe that this was triggered by phosphine gas from the Tylan LTO tube running the PSG400 recipe. As only some of you know, this past Sunday we also had detectable amounts of phosphine when this same recipe was running that did not reach the alarm trigger point. After that first incident, we disassembled and tested the components that we felt were at fault and believed that we had resolved the issue. We clearly did not and, as a result, are taking the system down for a more extensive set of checks and component replacements. We have an extensive toxic gas monitoring system that has been carefully designed to alert us in the event of the release of potentially corrosive, flammable, or toxic gases. While it is certainly true that the process gas SHOULD BE confined to the process tube and vacuum system, this experience clearly shows that components can fail in ways that allow gas to be in places where it should not be. We believe that the toxic gas monitoring system has functioned as it should. Our toxic gas system is monitoring close to 100 points in the lab and gas bunkers at all times. How are the alarm levels set and how is that checked? This system is permitted by Santa Clara county and there are regulations that control when we need gas detection, the levels that should trigger and alarm, etc. During the annual holiday shutdown, we hire an independent third-party (Industrial Hygiene Services) to come in and test each sensor with a calibrated concentration of an appropriate live gas. During that test, checks are made to insure that each sensor responds as it should, that alarm set points are set to appropriate levels and that each alarm triggers the appropriate response (calls the Fire Dept, sounds a local alarm, etc). All of the hydride sensors were checked with a calibrated standard containing 1000 ppb (parts per billion) of phosphine and responded as they should. Note: this test typically takes three days to conduct. The entire test is witnessed by a Hazardous Materials Specialist from the Santa Clara County Hazardous Materials Compliance Division. We are working hard to identify and replace the failed component and hope to return tylanbpsg to service in the near future. While we are sorry that we had any form of leak, we are certainly glad that we have appropriate monitors in place to alert us to this serious problem. Please let me know if you have any additional questions, John From mtang at stanford.edu Fri Aug 6 13:07:38 2010 From: mtang at stanford.edu (Mary Tang) Date: Fri, 06 Aug 2010 13:07:38 -0700 Subject: [Fwd: Important Building Advisory! Via Palou Road Construction Start Week of August 9th] Message-ID: <4C5C6B8A.2010008@stanford.edu> Dear Labmembers -- See below for details. The Project Manager assures us that we will be informed in advance of activities that may affect vibration-sensitive equipment. Please note that building emergency exits will be maintained. Your SNF Staff -------- Original Message -------- Subject: Important Building Advisory! Via Palou Road Construction Start Week of August 9th Date: Fri, 06 Aug 2010 11:54:35 -0700 From: Kenny Green To: cis-building at cis.stanford.edu All, The north side of Via Pueblo will be widened towards the Paul Allen building, the south side of the road will remain open to traffic with flaggers on each end. This section will be closed to pedestrians and bikes during construction with detours to Via Palou and through the SEQ. Construction begins next week and will be complete prior to the start of school. Working hours will be *Mon - Fri. 6am - 2:30pm, with occasional activity on the weekends. ADA access to the Paul Allen building will be on the north side, at the Serra Mall ramp (Allen Annex entrance). Emergency exits will be maintained. * Lastly, some sensitive lab equipment may be impacted by the vibrations during the demolition phase. Please contact David Kirk, project representative (dgkirk at stanford.edu cell 650-384-5758) with questions or concerns. Thanks for your attention! -- Kenny Green Facilities Services Manager Electrical Engineering 650.724.3310 Office 650.804.2032 Cell -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From shuluc at stanford.edu Fri Aug 6 14:05:09 2010 From: shuluc at stanford.edu (Shu-Lu Chen) Date: Fri, 6 Aug 2010 14:05:09 -0700 (PDT) Subject: EE PhD Oral Exam - Shu-Lu Chen, Monday, August 9, 2010; 1:00pm, CISX Auditorium In-Reply-To: Message-ID: <1281219114.504395.1281128709158.JavaMail.root@zm06.stanford.edu> Stanford University PhD Dissertation Defense PhD Candidate : Shu-Lu Chen Title : Multiple-Materials on Silicon Integration Research Advisor : Prof. Jim Plummer Date : Monday, August 9th, 2010 Time : 1:00 pm (Refreshments served at 12:45 pm) Location : CISX Auditorium (room 101) Abstract : The focus of this talk is on the technique of integrating multiple-materials on a silicon platform, including experimental demonstrations, theoretical modeling and its application on simplified device structures for three-dimensional (3D) integration. In the first part of this talk, single crystal GaAs, GaSb and Ge thin films on top of dielectric layers with bulk silicon substrates are demonstrated using a technique called rapid melt growth. The relationship between stoichiometry and the crystal structure is investigated based on the theoretical phase diagram and the experimental results. In the second part of this talk, a compact model is derived based on the classical crystallization theory. The results are compared with thermal numerical simulation and experiments to provide comprehensive understanding of the physics behind this process and to further identify the key experimental factor. In the last part of this talk, a simplified device structure is provided as an application of the thin film growth technique. The simplified structure is compared to the conventional MOSFET structure with focus on their performance and process complexity trade-off for 3D-IC implementation. From mtang at stanford.edu Sun Aug 8 09:39:19 2010 From: mtang at stanford.edu (Mary Tang) Date: Sun, 08 Aug 2010 09:39:19 -0700 Subject: Process Clinic, Monday, 2-3 pm Message-ID: <4C5EDDB7.2040108@stanford.edu> Dear Labmembers -- There will be a Process Clinic on Monday, August 9, from 2-3 pm in the cubicle area outside Maureen's office. Bring device sketches, process questions/runsheets, and mask layouts. Staff and experienced labmembers will be on hand to brainstorm solutions. Your SNF staff From jprovine at stanford.edu Mon Aug 9 10:20:28 2010 From: jprovine at stanford.edu (J Provine) Date: Mon, 9 Aug 2010 10:20:28 -0700 Subject: ALD QC moved to thursday at 4pm this week Message-ID: hello all, due to travel the ald quality circle will not be able to meet at the normal time of friday 10am. instead we are meeting on thursday (8/12) at 4pm. still in Allen 101 conference room. apologies for the schedule change. if you planned on attending and cannot at the new time, please let me know and i will send you an update from the meeting. j -------------- next part -------------- An HTML attachment was scrubbed... URL: From gyama.snf at gmail.com Mon Aug 9 14:56:02 2010 From: gyama.snf at gmail.com (Gary Yama - SNF) Date: Tue, 10 Aug 2010 06:56:02 +0900 Subject: ALD QC moved to thursday at 4pm this week In-Reply-To: <23624_1281374897_4C603AB1_23624_44_31_AANLkTiku28v=D+RJHBTT3h7dzboBctk0=Z2XyHqofkL9@mail.gmail.com> References: <23624_1281374897_4C603AB1_23624_44_31_AANLkTiku28v=D+RJHBTT3h7dzboBctk0=Z2XyHqofkL9@mail.gmail.com> Message-ID: I'll still be in Japan, please send any updates. Thanks - Gary On Tue, Aug 10, 2010 at 2:20 AM, J Provine wrote: > hello all, > due to travel the ald quality circle will not be able to meet at the normal > time of friday 10am. > instead we are meeting on thursday (8/12) at 4pm. still in Allen 101 > conference room. > > apologies for the schedule change. if you planned on attending and cannot > at the new time, please let me know and i will send you an update from the > meeting. > j > -------------- next part -------------- An HTML attachment was scrubbed... URL: From mbaran at stanford.edu Mon Aug 9 15:34:30 2010 From: mbaran at stanford.edu (Maureen Baran) Date: Mon, 9 Aug 2010 15:34:30 -0700 Subject: A Blue Tooth (phone device) was found in the cleanroom Message-ID: <005f01cb3813$088180b0$19848210$@edu> Dear Lab Members, A Blue Tooth (phone device) was found in the cleanroom. If you are expecting a call.please come by my cubicle and claim it. I'm in cubicle #41. Maureen Maureen Baran Stanford Nanofabrication Facility Lab Services Administrator mbaran at stanford.edu 650-725-3664 -------------- next part -------------- An HTML attachment was scrubbed... URL: From mbaran at stanford.edu Tue Aug 10 11:23:57 2010 From: mbaran at stanford.edu (Maureen Baran) Date: Tue, 10 Aug 2010 11:23:57 -0700 Subject: The 2010-11 Department Sponsorship Application and Parking Permit Applications are NOW Available Message-ID: <004101cb38b9$32fb3420$98f19c60$@edu> Dear All, The 2010-11 Department Sponsorship Application is NOW available. I will have them in a hanging file outside my cubicle. I am located on the first floor of the Paul G. Allen building in cubicle #41 which is the cubicle closest to the building doors facing the Applied Physics Building on Via Pueblo. IMPORTANT: THIS FORM MUST BE RENEWED ANNUALLY ON OR BEFORE SEPTEMBER 1ST. This Sponsorship form is for Individuals (Industry Users and Other Academic Users) that are being sponsored by a university department (SNF). A completed parking permit application and photo ID are also required for permits. If you have any questions please let me know. Maureen Maureen Baran Stanford Nanofabrication Facility Lab Services Administrator mbaran at stanford.edu 650-725-3664 -------------- next part -------------- An HTML attachment was scrubbed... URL: From tberg at stanford.edu Wed Aug 11 07:08:41 2010 From: tberg at stanford.edu (Ted Berg) Date: Wed, 11 Aug 2010 07:08:41 -0700 Subject: Status of new RTPs and ALD Message-ID: <4C62AEE9.9040609@stanford.edu> Hello All, Just a quick update to let everyone know the current status of new tools in the lab.* Good news*, the RTPs have been signed off by all of the county regulatory agencies and are ours to continue startup. It is now up to Ed and Jim H to have Allwin( the vendor) come in and perform startup and their qual. Contact Ed for training. Not such great news for the FIJI ALD we are still discussing several issues with county fire officials-other depts are OK. Unsure as to time of resolution. Intel vac sputter and ebeam tools will be here soon and hopefully plans will not be too delayed. One of the plasma dep tools is already here and we are working on plan submittal. Hopefully disruptions will be kept to a minimum as these tools are installed. Once again thank you for your patience and cooperation as these plans move forward. Ted -------------- next part -------------- An HTML attachment was scrubbed... URL: From mbaran at stanford.edu Wed Aug 11 08:55:38 2010 From: mbaran at stanford.edu (Maureen Baran) Date: Wed, 11 Aug 2010 08:55:38 -0700 Subject: Lost Key with Short Black and White Lanyard attached Message-ID: <001701cb396d$a4bf9ab0$ee3ed010$@edu> Dear All, A single key on a short black and white lanyard has been found on the first floor of the Paul G. Allen Building if this is your key please come to my cubicle #41 and claim it. Thank you, Maureen Maureen Baran Stanford Nanofabrication Facility Lab Services Administrator mbaran at stanford.edu 650-725-3664 -------------- next part -------------- An HTML attachment was scrubbed... URL: From edmyers at stanford.edu Wed Aug 11 14:45:48 2010 From: edmyers at stanford.edu (Ed Myers) Date: Wed, 11 Aug 2010 14:45:48 -0700 Subject: 610 Anneal Systems Message-ID: <6.2.5.6.2.20100811144430.051d9968@stanford.edu> All, While we are excited to finally pass the permitting process, this still does not mean the tools are ready for release. We need to bring in the manufacture and have them go through their start-up process and verify the hardware. Once this has been completed then we need to verify our processes. While the SNF staff is learning the tool we can open up the tool for lab member "at risk" processing as I know many of you are waiting. I am calling these "at risk" processing because I can not answer your questions regarding the performance of the systems until they have been characterized. I think we are a week or two away from opening up the tools for any at risk processes. To better understand the critical annealing demands please send me your sample type, anneal atmosphere and your desired thermal cycle. I will try and help everyone get back to processing as soon as I can. There are questions floating around regarding the configuration of the new 610 systems. Both of these systems are identical and they are plumbed with the identical gases which are on the AG4108 and AG4100. The gases are N2, O2, NH4, Forming gas (4%H-N2), N2O and Ar. The systems have pyrometer control for anneals greater than ~450C, just like the AG4100 and AG4108. All four systems will be running the same operating software. What is different about the 610 systems over the automated ones are, we can control low temperature anneals <450C with a thermal couple. The thermal couple can not tolerate high temperature anneals, so it will have to be installed and removed as required. Also purchased silicon carbide susceptors for piece work. In theory (assuming they are handled appropriately by the community) these will provide better reproducibility for pieces. Ed From nharjee at stanford.edu Sun Aug 15 23:10:14 2010 From: nharjee at stanford.edu (Nahid Harjee) Date: Sun, 15 Aug 2010 23:10:14 -0700 Subject: SNF disk usage Message-ID: Fellow lab members, Please take a moment to delete files you no longer need in your SNF home directories. We are almost at capacity which is causing Coral, Firefox, etc. to crash. Filesystem kbytes used avail capacity Mounted on shine.snffab.stanford.edu:/export/home/User 62914560 62903679 10880 100% /home/User Thanks, nh -- Nahid Harjee Ph.D. Candidate Electrical Engineering Stanford University 408-761-8651 -------------- next part -------------- An HTML attachment was scrubbed... URL: From shott at stanford.edu Mon Aug 16 07:27:01 2010 From: shott at stanford.edu (John Shott) Date: Mon, 16 Aug 2010 07:27:01 -0700 Subject: Disk usage .... Message-ID: <4C694AB5.5040404@stanford.edu> SNF Lab Members: Once again, we have filled disks. When that happens you can't log into the Sunrays and everyone is unhappy. I've included a list of the folks that are using over 100MB of disk space. If you have some big files that are stored elsewhere can you please delete them from this system? Note: a number of you (even if you are not on this list) are using 50 MB of disk space just for a Firefox or Mozilla cache. It will help all of us if you can go in and reduce the cache size to 10MB. To do this, if you are using Firefox 3 please do the following: Open the browser. From the Edit menu select "Preferences". When that window pops up, select "Advanced" and then the "Network" tab on that page. Under "Offline storage" change the amount of space down to 10 MB if it is set at 50 MB or higher. Also, click the "Clear Now" button to empty the cache. If you are still using Mozilla, the process is very similar: Open the Mozilla browser. From the Edit menu select "Preferences". When that window pops up, select "Advanced" and then the "Cache" item under it. On that panel you will be able to reduce the cache size from 50 MB to 10 MB and then also click the "Clear Cache" button to empty the current cache. Note: deleting the cache shouldn't hurt you .... it merely keeps a copy of recently visited pages to keep them from re-loading when you visit them again. In our case, the disk savings of many users only consuming 10 MB of disk cache rather than 50 MB likely outweighs the additional network traffic of loading additional pages. Here is the ordered list of big disk users ... Thanks, John 458708 calarrudo 414943 chen0622 397138 sbiaa 394090 ychai 376436 bbj 365860 gunjim 355505 vossough 338853 mvikram 333459 eenriquez 332442 akhan 330693 pnataraj 324741 naiqian 312744 true 303741 bchui 279011 rostam 251769 mtan 251597 jtsai 248060 mislam 246350 megrubbs 243660 mdickey 242284 chongxie 235747 maxms 235379 vlordi 227359 popomoo 224591 kosarb 223216 renshen 216420 cmfaulkn 212200 dinhthuc 211496 eata 202085 hphan 200426 gladys 195717 takuyan 195699 gyama 192020 mrlin 190732 rparsa 190333 ocakkaya 189230 junil 184834 sigari 184623 chion 182052 mcvittie 180797 dgunning 179829 nppatil 178459 ryw 176546 aeonia 173008 king 170617 alsune 170474 rik 168823 faridz 168320 ghyrn 166899 altug 166591 hopcroft 166416 wanki 163865 axiu 163252 liangjl 163153 mcherry 163058 ericp 161627 dalyx 161143 svo 155948 dlieberm 154755 jfoster 154370 haiwei 152729 junjun 150234 gth 149449 ywidjaja 148730 jhaydon 147908 cmcg 143798 zpatel 143400 srikantv 141970 jleu 141954 kghadiri 141826 yoavb 141115 dkozak 141081 ajamo 139204 pponce 137843 xzhuan1 137026 ybkim 136285 mccord 136103 tdo 135831 dniemann 135308 dasgupta 134267 hrleebh 133931 chingmei 133848 jennyhu 131432 yoonjin 131097 nharjee 130843 joongsun 130653 karen 129460 masaharu 128965 fanzeng 128750 kimsangb 128749 jweisse 127778 sipark 127672 oisaadat 127152 sdogbe 127000 jsnapp 126825 muchiao 126390 haniff 126253 rshyam 126210 tura 125850 bwacker 124727 cbellew 123981 cursive 123120 iwjung 122769 yiyang 122552 dongrip 122030 okilic 121157 erichall 120001 jcdoll 118982 kattsai 117782 swalker 117632 wasserbauer 117547 lindaw 117298 daesung 116580 yyao 116523 ylinn 115057 fanpy 114926 maryamzm 114910 stamm 114405 lwchang 114404 dfulgencio 113958 maynard 113343 mcp 113260 malekos 112892 wanglele501 112774 wstonas 112637 bob101 111981 yinliu 111960 bdai 111569 kupnik 110760 johana 108940 cdietz 108566 yeh 108493 laurahughes 108369 jerabek 107676 pbrink 107625 patlu 107590 grupp 107231 whlee 107079 mmessana 106648 nmiller 106421 jasonlin 105517 sgraham 105173 bork 105048 vishal 104717 uli 104665 nchoksi 104584 shuluc 104448 kokab 104408 nbastianon 104246 dhum 104013 jwillett 103989 nburt 103093 ahazeghi 102499 mferrier 102364 komadina 102055 ee410c 101755 mkseo 101184 ycjun 100758 ayz 100480 jrgdavid 100475 alexneu From mtang at stanford.edu Mon Aug 16 11:34:04 2010 From: mtang at stanford.edu (Mary Tang) Date: Mon, 16 Aug 2010 11:34:04 -0700 Subject: Lab is open (following power outage) Message-ID: <4C69849C.2050006@stanford.edu> Dear Labmembers -- The lab is now open again after this morning's power outage. The cause appears to have been a short caused during building repair and maintenance of a compressor. The Buildings & Ground Maintenance group immediately sent out electricians to assess and repair the problem. Greenlighted tools should be OK to use. Tools that are in shutdown or enabled by staff are in the process of being checked out. Please check with the responsible staff member about the status of any tool if there are any uncertainties. And please do report any problems you observe, as power glitches can result in less-than-obvious issues. Lastly, if you have equipment enabled during this time, contact staff about adjusting your enable times. If you have wafers in process and can't yet retrieve them, contact any staff with instructions on what to do with them. Your SNF Staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From chingmei at stanford.edu Mon Aug 16 19:52:27 2010 From: chingmei at stanford.edu (Ching-Mei Hsu) Date: Mon, 16 Aug 2010 19:52:27 -0700 (PDT) Subject: spin on glass In-Reply-To: <276856990.51943.1282013484377.JavaMail.root@zm01.stanford.edu> Message-ID: <667190210.51949.1282013547727.JavaMail.root@zm01.stanford.edu> Dear labmemebers, Does anyone have experiences with spin-on glass? Which suppliers do you recommend? Thanks, Ching-Mei -- Ching-Mei Hsu PhD Candidate Materials Science and Engineering Stanford University McCullough rm. 209 476 Lomita Mall Stanford, CA 94305 From mtang at stanford.edu Tue Aug 17 14:58:29 2010 From: mtang at stanford.edu (Mary Tang) Date: Tue, 17 Aug 2010 14:58:29 -0700 Subject: Thesis Defense: Gaurav Thareja, Friday, Aug. 20, 1 pm Message-ID: <4C6B0605.2000606@stanford.edu> Surface Passivation and Source/Drain Junction Engineering in Germanium Field-Effect Transistors for High Performance CMOS (PDF attached) Gaurav Thareja Advisor: Prof. Yoshio Nishi Co-Advisor: Prof. Krishna Saraswat PhD Committee - Prof. Paul McIntyre, Prof. Jelena Vuckovic Date: Friday, Aug 20th, 2010 Time: 1:00pm (Refreshments at 12:45p) Location: Allen Auditorium (101X) http://cis.stanford.edu/misc/directions.html Germanium (Ge) has emerged as an important materials platform during recent years. With its high carrier mobility and the ability to detect and emit photons at telecommunications wavelengths, Ge is an attractive candidate for applications in both high performance electronics and optoelectronics. Moreover due to its compatibility with conventional CMOS fabrication, it can be processed using the standard manufacturing techniques that are currently used for silicon. However Ge does present a number of unique challenges that must be overcome, including issues of surface passivation, low n-type dopant solubility, and high dopant diffusivity. In this talk, I will present my work summarizing three different contributions to Ge MOS technology: (1) Ultra-thin GeO2 interfacial layers formed on Ge using Slot Plane Antenna (SPA) radical oxidation including substrate orientation independent growth rate and low interface state density (2E11 cm-2eV-1). Drive current enhancement and EOT reduction for planar Ge MOSFETs will be demonstrated along with results of conformal oxidation of three dimensional structures applied to Gate All Around (GAA) MOSFETs. (2) Ultra Shallow Junctions (USJ) [sub-10 nm junction depth] for Ge using Plasma Immersion Ion Implantation (P-III). USJ are required in order to reduce the Drain Induced Barrier Lowering (DIBL) effect in high-performance short-channel transistors for the sub-22nm ITRS node. (3) High n-type dopant activation (> 1E20 cm-3) using Laser Thermal Processing (LTP). Theoretical modeling of LTP for Ge will be presented along with well behaved n+/p Ge diodes (Ion/Ioff > 1E5, ideality factor (?) < 1.2, low sheet/contact resistance 7E-7 ohm-cm2) and MOSFETs -------------- next part -------------- A non-text attachment was scrubbed... Name: 2010_08_20_PhD_Defense_Abstract_Gaurav_Thareja_Stanford_EE.pdf Type: application/pdf Size: 78737 bytes Desc: not available URL: From mtang at stanford.edu Wed Aug 18 21:50:29 2010 From: mtang at stanford.edu (Mary Tang) Date: Wed, 18 Aug 2010 21:50:29 -0700 Subject: Odor in the lab reported Message-ID: <4C6CB815.8020409@stanford.edu> Dear labmembers, This evening around 7:30 pm, a concerned labmember reported a strong "sweetish" odor in the lab near the LPCVD furnaces. By about 8:30 pm, the odor was reported to have dissipated. "Sweet" is not typically used to describe any of the gases and chemicals used in the lab. And with the air handling system, it can be difficult to where a particular smell may be coming from. However, everyone should always be alert for changes in the lab environment -- smells and sounds are often the first clues to problems. So, if anyone has observed anything else unusual in this area around 7:30 pm, please let a staff member know. Thanks, Your SNF Staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From maurice at stanford.edu Thu Aug 19 16:04:36 2010 From: maurice at stanford.edu (maurice) Date: Thu, 19 Aug 2010 16:04:36 -0700 Subject: Update on reported lab odor Message-ID: <4C6DB884.8010903@stanford.edu> Subject: Update on reported lab odor Dear Labmembers: Last night around 7:30 pm, a strong odor was reported in the lab near the wbsilicide bench. The immediate area was cleared. By 8:30, the odor had completely dissipated. Toxic gas sensors located in this area did not detect alarm levels; if they had, there would have been an automatic building evacuation. Today, we think the possible source might have been tylan6*,* the POCl3 furnace. This furnace will remain shutdown until we can take measures to ensure it can be run safely. Until then, if you really need phosporous doping, staff will work with you to find alternatives. We want to acknowledge rostam and xzhuang1 who observed the problem and acted quickly to shutdown the tylan6 furnace, and maxms who informed staff by calling the off-hours duty phone. Please always be alert to unusual odors and sounds as they are often the first clue to what could be a serious lab problem. Thanks for your attention -- Your SNF Staff -------------- next part -------------- An HTML attachment was scrubbed... URL: From gthareja at stanford.edu Thu Aug 19 15:51:43 2010 From: gthareja at stanford.edu (Gaurav Thareja) Date: Thu, 19 Aug 2010 15:51:43 -0700 (PDT) Subject: PhD Oral Examination - Gaurav Thareja, Friday (tomorrow), August 20, 2010; 1:00 p.m. (food at 12:40p), Allen Bldg. 101X Message-ID: <2070924778.138749.1282258303611.JavaMail.root@zm06.stanford.edu> Surface Passivation and Source/Drain Junction Engineering in Germanium Field-Effect Transistors for High Performance CMOS Gaurav Thareja Advisor: Prof. Yoshio Nishi Co-Advisor: Prof. Krishna Saraswat PhD Committee - Prof. Paul McIntyre, Prof. Jelena Vuckovic Date: Friday, Aug 20th, 2010 Time: 1:00pm (Food at 12:40p) Location: Allen Auditorium (101X) http://cis.stanford.edu/misc/directions.html Germanium (Ge) has emerged as an important materials platform during recent years. With its high carrier mobility and the ability to detect and emit photons at telecommunications wavelengths, Ge is an attractive candidate for applications in both high performance electronics and optoelectronics. Moreover due to its compatibility with conventional CMOS fabrication, it can be processed using the standard manufacturing techniques that are currently used for silicon. However Ge does present a number of unique challenges that must be overcome, including issues of surface passivation, low n-type dopant solubility, and high dopant diffusivity. In this talk, I will present my work summarizing three different contributions to Ge MOS technology: (1) Ultra-thin GeO2 interfacial layers formed on Ge using Slot Plane Antenna (SPA) radical oxidation including substrate orientation independent growth rate and low interface state density (2E11 cm-2eV-1). Drive current enhancement and EOT reduction for planar Ge MOSFETs will be demonstrated along with results of conformal oxidation of three dimensional structures applied to Gate All Around (GAA) MOSFETs. (2) Ultra Shallow Junctions (USJ) [sub-10 nm junction depth] for Ge using Plasma Immersion Ion Implantation (P-III). USJ are required in order to reduce the Drain Induced Barrier Lowering (DIBL) effect in high-performance short-channel transistors for the sub-22nm ITRS node. (3) High n-type dopant activation (> 1E20 cm-3) using Laser Thermal Processing (LTP). Theoretical modeling of LTP for Ge will be presented along with well behaved n+/p Ge diodes (Ion/Ioff > 1E5, ideality factor (?) < 1.2, low sheet/contact resistance 7E-7 ohm-cm2) and MOSFETs From gthareja at stanford.edu Thu Aug 19 15:49:17 2010 From: gthareja at stanford.edu (Gaurav Thareja) Date: Thu, 19 Aug 2010 15:49:17 -0700 (PDT) Subject: PhD Oral Examination - Gaurav Thareja, Friday (tomorrow), August 20, 2010; 1:00 p.m. (food at 12:40p), Allen Bldg. 101X In-Reply-To: <266613583.138675.1282258080262.JavaMail.root@zm06.stanford.edu> Message-ID: <1984023685.138705.1282258157629.JavaMail.root@zm06.stanford.edu> Surface Passivation and Source/Drain Junction Engineering in Germanium Field-Effect Transistors for High Performance CMOS (PDF attached) Gaurav Thareja Advisor: Prof. Yoshio Nishi Co-Advisor: Prof. Krishna Saraswat PhD Committee - Prof. Paul McIntyre, Prof. Jelena Vuckovic Date: Friday, Aug 20th, 2010 Time: 1:00pm (Food at 12:40p) Location: Allen Auditorium (101X) http://cis.stanford.edu/misc/directions.html Germanium (Ge) has emerged as an important materials platform during recent years. With its high carrier mobility and the ability to detect and emit photons at telecommunications wavelengths, Ge is an attractive candidate for applications in both high performance electronics and optoelectronics. Moreover due to its compatibility with conventional CMOS fabrication, it can be processed using the standard manufacturing techniques that are currently used for silicon. However Ge does present a number of unique challenges that must be overcome, including issues of surface passivation, low n-type dopant solubility, and high dopant diffusivity. In this talk, I will present my work summarizing three different contributions to Ge MOS technology: (1) Ultra-thin GeO2 interfacial layers formed on Ge using Slot Plane Antenna (SPA) radical oxidation including substrate orientation independent growth rate and low interface state density (2E11 cm-2eV-1). Drive current enhancement and EOT reduction for planar Ge MOSFETs will be demonstrated along with results of conformal oxidation of three dimensional structures applied to Gate All Around (GAA) MOSFETs. (2) Ultra Shallow Junctions (USJ) [sub-10 nm junction depth] for Ge using Plasma Immersion Ion Implantation (P-III). USJ are required in order to reduce the Drain Induced Barrier Lowering (DIBL) effect in high-performance short-channel transistors for the sub-22nm ITRS node. (3) High n-type dopant activation (> 1E20 cm-3) using Laser Thermal Processing (LTP). Theoretical modeling of LTP for Ge will be presented along with well behaved n+/p Ge diodes (Ion/Ioff > 1E5, ideality factor (?) < 1.2, low sheet/contact resistance 7E-7 ohm-cm2) and MOSFETs -------------- next part -------------- A non-text attachment was scrubbed... Name: 2010_08_20_PhD_Defense_Abstract_Gaurav_Thareja_Stanford_EE.pdf Type: application/pdf Size: 78737 bytes Desc: not available URL: From mtang at stanford.edu Fri Aug 20 12:53:29 2010 From: mtang at stanford.edu (Mary Tang) Date: Fri, 20 Aug 2010 12:53:29 -0700 Subject: Thesis defense: Gaurav Thareja - Today Message-ID: <4C6EDD39.5060903@stanford.edu> Gaurav invites all labmembers to his thesis defense at 1 pm. The title is: Surface Passivation and Source/Drain Junction Engineering in Germanium Field-Effect Transistors for High Performance CMOS. It will be in the Allen X Auditorium. There are Indian and Japanese refreshments available. -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mihirt at stanford.edu Fri Aug 20 16:50:12 2010 From: mihirt at stanford.edu (Mihir Tendulkar) Date: Fri, 20 Aug 2010 16:50:12 -0700 (PDT) Subject: More isotropic dry etching? Message-ID: <801318851.154803.1282348212521.JavaMail.root@zm01.stanford.edu> Hi labmembers, In my process, I'm using SPR 955 to pattern 250nm PECVD SiO2 with dry etch in the MRC. I'm getting great, vertical sidewalls -- which is normally desirable. But in my next step (reactive sputtering of a dielectric), I'm getting uneven coverage at the corners, which is shorting my devices. I think this can be solved by using a more isotropic etch. Wet etch leaves undesirable residue on my Pt etch stop, so I would like to stick with dry etch. Is there a technique to get slightly more isotropic etches or a graded sidewall of some kind? I am considering trying: - Higher pressure during dry etch - Not using HMDS so that the resist delaminates a little at the edges - Not curing/baking the resist before my dry etch Any tips would be most appreciated. Thanks in advance. -- Mihir Tendulkar Applied Physics PhD Candidate Nishi Group, Stanford University From ytanster at gmail.com Sun Aug 22 08:06:04 2010 From: ytanster at gmail.com (Mike Tan) Date: Sun, 22 Aug 2010 08:06:04 -0700 Subject: possible gas leak in AMTetcher? Message-ID: I noticed that the machine reported a 1cc flow of SF6 when the chamber is open. The SF6 flow was also detected during operation when the recipe was set to have a 0 flow of SF6. Does this mean that there is a gas leak? Or is there something wrong with the flow sensor? Regards, Mike Tan -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Sun Aug 22 08:55:15 2010 From: mtang at stanford.edu (Mary Tang) Date: Sun, 22 Aug 2010 08:55:15 -0700 Subject: possible gas leak in AMTetcher? In-Reply-To: References: Message-ID: <4C714863.8070201@stanford.edu> Hi Mike -- It is extremely unlikely that there is actual flow when the chamber is open as there are gas shutoff valves and interlocks as well as the MFC to prevent this. However, it is pretty common for the flow sensor zero to drift. So, this should be OK to continue running presuming that all other functions are OK. Please make sure to report this on Coral as a problem. Thanks, Mary On 8/22/2010 8:06 AM, Mike Tan wrote: > I noticed that the machine reported a 1cc flow of SF6 when the chamber > is open. The SF6 flow was also detected during operation when the > recipe was set to have a 0 flow of SF6. Does this mean that there is > a gas leak? Or is there something wrong with the flow sensor? > > > Regards, > > Mike Tan From mtang at stanford.edu Mon Aug 23 10:55:24 2010 From: mtang at stanford.edu (Mary Tang) Date: Mon, 23 Aug 2010 10:55:24 -0700 Subject: Process Clinic, today 2:10-3 pm (note late start) Message-ID: <4C72B60C.8020704@stanford.edu> Dear Labmembers -- There will be a Process Clinic today, Monday, August 23, from 2:10-3 pm in the cubicle area outside Maureen's office. Bring device sketches, process questions/runsheets, and mask layouts. Staff and experienced labmembers will be on hand to brainstorm solutions. Your SNF staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From cearhart at stanford.edu Wed Aug 25 12:29:38 2010 From: cearhart at stanford.edu (Chris Earhart) Date: Wed, 25 Aug 2010 12:29:38 -0700 Subject: MSE Colloqium and Undergraduate Poster Symposium - Fri Aug 27 at 3:30PM Message-ID: MSE Undergraduate Research Program Invited Talk August 27, 2010 CISX Auditorium Starts at 3:30PM *Exploring the Properties of Graphene and Nanostructured Boron Nitride* *Alex Zettl* Materials Sciences Division, Lawrence Berkeley National Laboratory and Department of Physics University of California, Berkeley *azettl at physics.berkeley.edu* ** Abstract: Graphene, a single sheet of sp2-bonded carbon, is an interesting materials from a basic science and applications point of view. I will discuss some recent high-resolution microscopy experiments utilizing graphene. A related sp2-bonded system is synthetic boron nitride, for which research is intensifying. I will discuss some recent results for BN sheets and tubes. ???? MSE Undergraduate Summer Research Poster Symposium Science and Technology at the Nanoscale August 27, 2010 CISX Patio Starts at 4:30PM After the invited talk by Prof. Alex Zettl ** Pizza and drinks will be served** *#* *Student Name* *Advisor* *Project Name* *1* Daniel Eth A. Lindenberg X-Ray Pump-Probe Spectroscopy for Ultrafast Probing on the Atomic Scale *2* Lawrence Crosby A. Salleo ZnO Nanostructure Films for Transparent Conductors *3* Jacob Smith A. Salleo Optimizing Sheet Resistance of Ga-doped ZnO Thin Films for Fatigue Testing *4* Edwin Brower B. Clemens Studying the Thermodynamics in Mg/Pd Thin Films for Hydrogen Storage through Optical-Transmission Measurements *5* Eli Pollak B. Clemens Epitaxial Cobalt Disilicide as an Electrical Contact in Biaxially Textured Inorganic Photovoltaic Thin Films *6* Heidi Norton J. Cochran A Comparison of Agatoxin and Agouti as Protein Engineering Scaffolds for Targeting Tumor Marker ?v?3 Integrin *7* Miguel San Pedro M. McGehee Efficiency of *N*-Alkylthieno[3,4-c]pyrrole-4,6-dione:Indene-C60 Monoadduct and Bisadduct Solar Cells *8* Oliver Friedberg N. Melosh Development of a Solar Concentrator System to Operate a Photon-Enhanced Thermionic Emission (PETE) Device *9* Emily Ye N. Melosh AFM Force Spectroscopy of Negatively Charged Lipid Stacks and Interaction with Amphipathic Peptides *10* Eric Newton P. McIntyre Nano-structured Metal/TiO2/Si Anodes for Water Oxidation *11* Suraya Omar R. Dauskardt Use of the Bulge Test to Study Biaxial Biomechanical Behavior of Human Stratum Corneum *12* Scott Takahashi R. Dauskardt Displacement Rate Correction Formula for use in DCB Delamination Tests *13* Alice Che R. Feigelson Characterization of Strontium Iodide *14* Clarissa Gutierrez R. Feigelson Densification of Rare-Earth Doped Y2O3 Ceramics *15* Luisa Russell R. Sinclair TEM of Gold-Silica Core-Shell Nanoparticle Raman Labels Conjugated to Listeria *16* Iheoma Umez-Eronini R. Sinclair Magnetic Layer Characterization in Perpendicular Recording Media *17* Jonathan Yu R. Sinclair TEM Analysis of Magnesium Thin Films for Hydrogen Storage *18* Wyatt Ratliff S. Heilshorn Oxygen Diffusion through Collagen at Different Densities *19* Jeffrey Sweet S. Heilshorn Effects of Salt Concentration on Mechanical Properties of Elastic Hydrogels *21* Thomas Carney Y. Cui Electrospinning Synthesis of Nanowires Chris Earhart Acting Assistant Professor Materials Science & Engineering Stanford University 496 Lomita Mall, Durand Building, Rm #131 Stanford, CA 94305-4034 Phone: (650)804-4326 -------------- next part -------------- An HTML attachment was scrubbed... URL: From cearhart at stanford.edu Fri Aug 27 10:52:18 2010 From: cearhart at stanford.edu (Chris Earhart) Date: Fri, 27 Aug 2010 10:52:18 -0700 Subject: REMINDER: MSE Colloquium and Undergraduate Poster Symposium -Today, 3:30PM Message-ID: > MSE Undergraduate Research Program Invited Talk > > August 27, 2010 > CISX Auditorium > Starts at 3:30PM > > > *Exploring the Properties of Graphene and Nanostructured Boron Nitride* > > *Alex Zettl* > > Materials Sciences Division, Lawrence Berkeley National Laboratory > > and > > Department of Physics > > University of California, Berkeley > *azettl at physics.berkeley.edu* > ** > Abstract: > > Graphene, a single sheet of sp2-bonded carbon, is an interesting materials > from a basic science and applications point of view. I will discuss some > recent high-resolution microscopy experiments utilizing graphene. A > related sp2-bonded system is synthetic boron nitride, for which research is > intensifying. I will discuss some recent results for BN sheets and tubes. > ???? > MSE Undergraduate Summer Research Poster Symposium > Science and Technology at the Nanoscale > > August 27, 2010 > > CISX Patio > Starts at 4:30PM > > After the invited talk by Prof. Alex Zettl > > ** Pizza and drinks will be served** > > *#* > > *Student Name* > > *Advisor* > > *Project Name* > > *1* > > Daniel Eth > > A. Lindenberg > > X-Ray Pump-Probe Spectroscopy for Ultrafast Probing on the Atomic Scale > > *2* > > Lawrence Crosby > > A. Salleo > > ZnO Nanostructure Films for Transparent Conductors > > *3* > > Jacob Smith > > A. Salleo > > Optimizing Sheet Resistance of Ga-doped ZnO Thin Films for Fatigue Testing > > *4* > > Edwin Brower > > B. Clemens > > Studying the Thermodynamics in Mg/Pd Thin Films for Hydrogen Storage > through Optical-Transmission Measurements > > *5* > > Eli Pollak > > B. Clemens > > Epitaxial Cobalt Disilicide as an Electrical Contact in Biaxially Textured > Inorganic Photovoltaic Thin Films > > *6* > > Heidi Norton > > J. Cochran > > A Comparison of Agatoxin and Agouti as Protein Engineering Scaffolds for > Targeting Tumor Marker ?v?3 Integrin > > *7* > > Miguel San Pedro > > M. McGehee > > Efficiency of *N*-Alkylthieno[3,4-c]pyrrole-4,6-dione:Indene-C60 > Monoadduct and Bisadduct Solar Cells > > *8* > > Oliver Friedberg > > N. Melosh > > Development of a Solar Concentrator System to Operate a Photon-Enhanced > Thermionic Emission (PETE) Device > > *9* > > Emily Ye > > N. Melosh > > AFM Force Spectroscopy of Negatively Charged Lipid Stacks and Interaction > with Amphipathic Peptides > > *10* > > Eric Newton > > P. McIntyre > > Nano-structured Metal/TiO2/Si Anodes for Water Oxidation > > *11* > > Suraya Omar > > R. Dauskardt > > Use of the Bulge Test to Study Biaxial Biomechanical Behavior of Human > Stratum Corneum > > *12* > > Scott Takahashi > > R. Dauskardt > > Displacement Rate Correction Formula for use in DCB Delamination Tests > > *13* > > Alice Che > > R. Feigelson > > Characterization of Strontium Iodide > > *14* > > Clarissa Gutierrez > > R. Feigelson > > Densification of Rare-Earth Doped Y2O3 Ceramics > > *15* > > Luisa Russell > > R. Sinclair > > TEM of Gold-Silica Core-Shell Nanoparticle Raman Labels Conjugated to > Listeria > > *16* > > Iheoma Umez-Eronini > > R. Sinclair > > Magnetic Layer Characterization in Perpendicular Recording Media > > *17* > > Jonathan Yu > > R. Sinclair > > TEM Analysis of Magnesium Thin Films for Hydrogen Storage > > *18* > > Wyatt Ratliff > > S. Heilshorn > > Oxygen Diffusion through Collagen at Different Densities > > *19* > > Jeffrey Sweet > > S. Heilshorn > > Effects of Salt Concentration on Mechanical Properties of Elastic Hydrogels > > *20* > > Thomas Carney > > Y. Cui > > Electrospinning Synthesis of Nanowires > > > > Chris Earhart > Acting Assistant Professor > Materials Science & Engineering > Stanford University > 496 Lomita Mall, Durand Building, Rm #131 > Stanford, CA 94305-4034 > Phone: (650)804-4326 > -------------- next part -------------- An HTML attachment was scrubbed... URL: From maurice at stanford.edu Fri Aug 27 17:55:13 2010 From: maurice at stanford.edu (maurice) Date: Fri, 27 Aug 2010 17:55:13 -0700 Subject: Todays short lab evacuation (~5:00- 5:05pm) Message-ID: <4C785E71.6010603@stanford.edu> Today at approximately 5:00pm several user reported a smell in the lab. We found smoke in the back service area and Uli used the lab red phone to evacuate the lab. We found oil squirting from the back of the Tylan pump cabinet. Tylannitride was in a pumpdown step and had only N2 flowing. We aborted the program and and shut off the pump. After several minutes the odor dissipated. We notified the lab users of the issue and let them re-enter the lab. As always, in the off hours, if you smell anything unusual, evacuate the area and contact the SNF on-call cell phone 650-521-7306. From shott at stanford.edu Sat Aug 28 14:00:14 2010 From: shott at stanford.edu (John Shott) Date: Sat, 28 Aug 2010 14:00:14 -0700 Subject: Card key outage last evening (Friday night). Message-ID: <4C7978DE.9000504@stanford.edu> SNF Lab Members and Allen Building Residents: I received several reports indicating that card keys weren't being recognized at any of our doors for a period of several hours last evening. I have checked the logs and find that the last indication that the system was working occurred at about 8:15 p.m. and the next indication of a successful card swipe did not occur until 12:50 a.m. Saturday morning indicating a period of outage that may have exceeded 4 hours. The card key system is a campus wide system that is managed centrally. The system is equipped with uninterruptible power supplies and does not need network access to function properly. I've contacted the staff member in IT services that maintains the system. While he does not yet know the cause of the outage, he is now aware of the problem and is investigating the situation. Should there be any further outages, it is best to contact the 24-hour IT Operations hot line at 650 723-1611. If you have any further questions, please let me know. Thanks, John From mtang at stanford.edu Mon Aug 30 16:57:39 2010 From: mtang at stanford.edu (Mary Tang) Date: Mon, 30 Aug 2010 16:57:39 -0700 Subject: Venture Clinic, Friday, 9/3, 4 pm Allen 201 Message-ID: <4C7C4573.4010403@stanford.edu> Dear Labmembers: There will also be a Venture Clinic with Shahin Farschi of Lux Capital, Friday, Sept. 3, at 4 pm in Allen 201 (note room change). Learn about the current conditions in the venture world or discuss your startup ideas with an experienced venturist. Shahin may also be contacted directly: Shahin Farshchi, Ph.D. Senior Associate Lux Capital Management, LLC C: 925.323.2784 http://www.luxcapital.com From mbaran at stanford.edu Tue Aug 31 14:05:24 2010 From: mbaran at stanford.edu (Maureen Baran) Date: Tue, 31 Aug 2010 14:05:24 -0700 Subject: 2010-11 Department Sponsorship MUST be Renewed by September 1st (tomorrow) Message-ID: <007a01cb4950$3b50e640$b1f2b2c0$@edu> Dear All, Reminder: Your 2010-11 Department Sponsorship needs to be renewed by September 1st, (tomorrow) in order to purchase a current parking permit for parking on campus. I have the applications hanging outside my cubicle. Maureen Maureen Baran Stanford Nanofabrication Facility Lab Services Administrator mbaran at stanford.edu 650-725-3664 -------------- next part -------------- An HTML attachment was scrubbed... URL: From edmyers at stanford.edu Tue Aug 31 16:27:19 2010 From: edmyers at stanford.edu (Ed Myers) Date: Tue, 31 Aug 2010 16:27:19 -0700 Subject: AW610 Progress Update Message-ID: <6.2.5.6.2.20100831161130.053854c8@stanford.edu> All, I apologize for sending this to all the lab members, but we don't have a sure fire way of communicating the progress on the new AW610 manual RTP systems to all of the interested parties. I ran our standard oxidation qualification on the AW610-l system. The resulting oxide thickness is within 5 Angstroms when compared to the AG4100 and it is displaying somewhat better oxide uniformity. The data can be found in AW610_l coral maintenance section. I am releasing this system for processing of pyrometer controlled recipes. I still want to integrate in some of the facilities to make your processing more automated. If you need to use this system (remember it's the cleaner system), please let me know and we can work on bringing up your recipes together and getting you qualified on the system. The AW610_l system I'm making available is our cleaner system. I know everyone is waiting for the less clean system (AW610-r), but there are some minor hardware problems (we need a new fitting for the camber cooling and there is a problem with one of the gas channels). Since the likelihood of loosing chamber cooling during processing is high, I want to keep the system down until this is repaired. I verified the software configurations on this system (AW610_r), so I'm anticipating only a half day of work after the repair before releasing this system to pyrometer controlled recipes. I believe there is high demand for low temperature processing on this system (temperatures below the pyrometer range), so we will need to determine how we want to configure this system (pyrometer or thermocouple control). Regards, Ed